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2007. 10. 30 1/2 semiconductor technical data MBRF1045 schottky barrier type diode revision no : 1 switching type power supply application. converter & chopper application. features average output rectified current : i o =10a. repetitive peak reverse voltage : v rrm =45v. fast reverse recovery time : t rr =35ns. maximum rating (ta=25 ) 1. cathode 2. nc 3. anode dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 j k l n p q r f q 1 2 3 l p n b g j d h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 5.08 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =10a - - 0.7 v repetitive peak reverse current i rrm v rrm =rated - - 150 reverse recovery time t rr i f =1.0a, di/dt=-30a/ s - - 35 ns thermal resistance r th(j-c) juction to case - - 3.0 /w characteristic symbol rating unit repetitive peak reverse voltage v rrm 45 v average output rectified current i o 10 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 150 a junction temperature t j -40 150 storage temperature range t stg -55 150
2007. 10. 30 2/2 MBRF1045 revision no : 1 i f - v f forward voltage v f (v) forward current i f (a) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1.0 3.0 10 30 100 reverse current i r ( a) reverse voltage v r (v) i r - v r 01020304050 0.01 0.1 1.0 10 100 t j =25 c t j =25 c average forward current i f(av) (a) average forward current i f(av) (a) i f - t c i f - t a p f(av) (w) average forward current i f(av) (a) p f(av) - i f(av) average forward power dissipation case temperature tc ( c) ambient temperature t a ( c) 0 0 0 0 0 100 120 2.0 dc 40 80 120 160 dc dc 4.0 8.0 12 2.0 4.0 dc 6.0 8.0 130 140 150 160 110 4.0 6.0 8.0 10 12 14 16 2 20 60 100 140 4 6 8 10 12 14 16 rated voltage applied (no heat sink) ja r =16 c/w ja r =60 c/w rated voltage r = 3.0 c/w applied jc |
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