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| microwave power gaas fet microwave semiconductor tim5964-60sl technical data features ? low intermodulation distortion ? high gain im3=-45 dbc at pout= 36.5dbm g1db=8.5db at 5.9ghz to 6.4ghz single carrier level ? broad band internally matched fet ? high power ? hermetically sealed package p1db=48.0dbm at 5.9ghz to 6.4ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db gain compression point p 1db dbm 47.0 48.0 ? power gain at 1db gain compression point g 1db db 7.5 8.5 ? drain current i ds1 a ? 13.2 15.0 gain flatness g db ? ? 0.8 power added efficiency add v ds =10v f = 5.9 to 6.4ghz i ds set ? 9.5a % ? 41 ? 3rd order intermodulation distortion im 3 dbc -42 -45 ? drain current i ds2 two-tone test po=36.5dbm (single carrier level) a ? ? 11.8 channel temperature rise tch (vds x ids + pin ? p1db) x rth(c-c) c ? ? 100 recommended gate resistance(rg) : 28 (max.) electrical character istics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 12.0a s ? 20 ? pinch-off voltage v gsoff v ds = 3v i ds = 200ma v -1.0 -1.8 -3.0 saturated drain current i dss v ds = 3v v gs = 0v a ? 38 ? gate-source breakdown voltage v gso i gs = -1.0ma v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 0.6 0.8 ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. aug. 2008
tim5964-60sl absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 20 total power dissipation (tc= 25 c) p t w 187.5 channel temperature t ch c 175 s torage temperature t stg c -65 to +175 package outline (2-16g1b) unit in mm (1) gate (2) source (3) drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c. 2 tim5964-60sl rf performance output power (pout) vs. frequency vds=10v ids ? 13.2a pin=39.5dbm 49 48 47 46 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 pout(dbm) frequency(ghz) output power(pout) vs. input power(pin) freq.=6.4ghz v ds =10v i ds set ? 9.5a pout add 51 50 49 48 47 46 45 44 43 42 pout(dbm) 90 80 70 60 50 40 30 20 add(%) 33 35 37 39 41 43 pin(dbm) 3 tim5964-60sl power dissipation(pt) vs. case temperature(tc) 4 200 100 0 pt(w) 40 80 120 160 200 0 tc( c ) im3 vs. power characteristics -10 v ds =10v i ds set ? 9.5a freq.=6.4ghz f=5mhz -20 -30 im3(dbc) -40 -50 -60 34 36 32 38 40 42 pout(dbm) @single carrier level |
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