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SPECS 100CT T45DB021 C3216X7R C1500 SN74LS 1N5415 CD411699
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  1996 preliminary data sheet silicon transistor the m PA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the vhf band to the uhf band. features ? low noise nf = 1.2 db typ. @ f = 1 ghz, v ce = 3 v, i c = 7 ma ? high gain |s 21e | 2 = 9.0 db typ. @ f = 1 ghz, v ce = 3 v, i c = 7 ma ? a small mini mold package adopted ? built-in 2 transistors (2 2sc4226) ordering information part number quantity packing style m PA810T loose products embossed tape 8 mm wide. pin 6 (q1 (50 pcs) base), pin 5 (q1 emitter), pin 4 (q2 emitter) face to perforation side of the tape. m PA810T-t1 taping products (3 kpcs/reel) remark if you require an evaluation sample, please contact an nec sales representative. (unit sample quantity is 50 pcs.) absolute maximum ratings (t a = 25 c) parameter symbol rating unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 12 v emitter to base voltage v ebo 3v collector current i c 100 ma total power dissipation p t 150 in 1 element mw 200 in 2 elements note junction temperature t j 150 ?c storage temperature t stg C65 to +150 ?c note 110 mw must not be exceeded in 1 element. m PA810T high-frequency low noise amplifier npn silicon epitaxial transistor (with built-in 6-pin 2 2sc4226) small mini mold package drawings (unit: mm) document no. p11463ej1v0ds00 (1st edition) date published june 1996 p printed in japan the information in this document is subject to change without notice. pin configuration (top view) pin connections 1. collector (q1) 2. base (q2) 3. collector (q2) 4. emitter (q2) 5. emitter (q1) 6. base (q1) 6 5 4 1 2 3 q 1 q 2 2.1?.1 1.25?.1 1 2 3 6 5 4 0.2 ? +0.1 0.65 0.65 1.3 2.0?.2 0.9?.1 0.7 0 to 0.1 0.15 ? +0.1 x y
m PA810T 2 electrical characteristics (t a = 25 c) parameter symbol condition min. typ. max. unit collector cutoff current i cbo v cb = 10 v, i e = 0 1 m a emitter cutoff current i ebo v eb = 1 v, i c = 0 1 m a dc current gain h fe v ce = 3 v, i c = 7 ma note 1 70 250 gain bandwidth product f t v ce = 3 v, i c = 7 ma 3.0 4.5 ghz feed-back capacitance c re v cb = 3 v, i e = 0, f = 1 mhz note 2 0.7 1.5 pf insertion power gain |s 21e | 2 v ce = 3 v, i c = 7 ma, f = 1 ghz 7 9 db noise figure nf v ce = 3 v, i c = 7 ma, f = 1 ghz 1.2 2.5 db h fe ratio h fe1 /h fe2 v ce = 3 v, i c = 7 ma 0.85 a smaller value among h fe of h fe 1 = q1, q2 a larger value among h fe of h fe 2 = q1, q2 notes 1. pulse measurement: pw 350 m s, duty cycle 2 % 2. measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. h fe classification rank fb gb marking 24r 25r h fe value 70 to 140 125 to 250 typical characteristics (t a = 25 c) 200 100 0 50 100 150 ambient temperature t a (c) total power dissipation p t (mw) p t C t a characteristics 20 10 0 0.5 1.0 v ce = 3 v base to emitter voltage v be (v) collector current i c (ma) i c C v be characteristics 25 20 15 10 5 0 5 10 i c C v ce characteristics collector current i c (ma) collector to emitter voltage v ce (v) collector current i c (ma) 200 100 50 20 10 0.5 1 5 10 50 v ce = 3 v dc current gain h fe h fe C i c characteristics 80 a 40 a 20 a 60 a 2 elements in total per element i b = 160 a m 140 a m 120 a m 100 a m m m m m
m PA810T 3 6 4 2 0 0.5 1.0 5.0 10 50 100 v ce = 3 v f = 1 gh z collector current i c (ma) noise figure (db) nf C i c characteristics 24 20 16 12 8 4 0 0.1 0.2 0.5 1.0 2.0 5.0 frequency f (gh z ) insertion power gain l s 21e l 2 (db) l s 21e l 2 C f characteristics v ce = 3 v i c = 7 ma feed-back capacitance c re (pf) 5.0 1.0 0.5 0.2 0.1 1 2 5 10 20 50 f = 1 mh z c re C v cb characteristics collector to base voltage v cb (v) 2.0 15 10 5 0 0.5 1 5 10 50 100 insertion power gain l s 21e l 2 (db) collector current i c (ma) v ce = 3 v f = 1.0 gh z l s 21e l 2 C i c characteristics 20 10 5 2 1 0.5 1 5 10 50 collector current i c (ma) f = 1.0 gh z v ce = 3 v gain bandwidth product f t (gh z ) f t C i c characteristics
m PA810T 4 s-parameters v ce = 3 v, i c = 1 ma frequency s 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100.00 0.959 C26.1 3.680 162.0 0.045 77.2 0.983 C9.0 200.00 0.920 C48.3 3.305 146.4 0.080 63.8 0.937 C15.8 300.00 0.838 C69.2 2.972 131.3 0.111 50.1 0.863 C23.0 400.00 0.810 C85.6 2.612 121.4 0.128 43.5 0.815 C26.3 500.00 0.775 C100.0 2.367 110.9 0.137 34.7 0.745 C29.1 600.00 0.767 C115.0 2.149 104.1 0.147 30.8 0.724 C31.7 700.00 0.745 C127.0 1.986 93.8 0.147 25.1 0.693 C33.2 800.00 0.722 C137.7 1.854 87.9 0.150 21.5 0.682 C36.5 900.00 0.711 C146.4 1.655 80.0 0.143 20.5 0.668 C39.2 1000.00 0.715 C155.0 1.541 74.0 0.140 17.1 0.644 C43.7 1100.00 0.708 C163.2 1.414 69.2 0.136 19.0 0.623 C46.8 1200.00 0.697 C171.9 1.340 63.3 0.134 18.0 0.594 C50.1 1300.00 0.688 C177.1 1.271 59.5 0.132 18.5 0.577 C52.7 1400.00 0.675 178.8 1.174 54.4 0.122 20.1 0.559 C55.3 1500.00 0.706 173.6 1.119 49.8 0.118 21.9 0.559 C58.3 1600.00 0.725 168.7 1.058 47.5 0.111 29.5 0.549 C61.9 1700.00 0.723 161.1 1.007 43.9 0.114 33.2 0.547 C66.8 1800.00 0.718 156.4 0.998 40.8 0.119 40.8 0.537 C71.6 1900.00 0.702 152.5 0.957 36.2 0.126 44.1 0.526 C76.8 2000.00 0.716 149.8 0.943 31.1 0.137 47.1 0.514 C81.8 v ce = 3 v, i c = 3 ma frequency s 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100.00 0.878 C39.3 9.289 153.2 0.041 71.5 0.941 C17.3 200.00 0.788 C69.5 7.675 133.1 0.068 55.9 0.807 C28.4 300.00 0.685 C93.9 6.222 117.5 0.087 44.8 0.674 C36.5 400.00 0.634 C111.2 5.151 108.1 0.094 41.7 0.588 C39.0 500.00 0.603 C125.2 4.360 99.6 0.100 37.3 0.511 C40.5 600.00 0.591 C137.9 3.838 94.6 0.105 37.7 0.475 C41.3 700.00 0.573 C148.5 3.378 86.0 0.107 36.4 0.443 C41.5 800.00 0.566 C156.8 3.215 82.1 0.113 36.7 0.425 C43.2 900.00 0.563 C163.4 2.821 75.6 0.114 38.8 0.408 C45.0 1000.00 0.573 C170.3 2.594 70.7 0.118 38.3 0.385 C48.2 1100.00 0.577 C177.2 2.359 67.2 0.122 41.5 0.365 C50.7 1200.00 0.572 175.4 2.200 62.2 0.128 41.7 0.343 C53.3 1300.00 0.563 171.4 2.084 58.8 0.136 42.9 0.326 C55.1 1400.00 0.555 168.5 1.904 54.8 0.138 43.8 0.309 C57.1 1500.00 0.584 164.9 1.803 50.5 0.146 44.3 0.301 C59.6 1600.00 0.603 161.2 1.700 48.7 0.150 48.4 0.290 C62.8 1700.00 0.608 154.7 1.616 45.4 0.161 47.8 0.281 C67.3 1800.00 0.607 150.8 1.591 42.4 0.173 50.0 0.268 C72.3 1900.00 0.598 147.7 1.523 38.1 0.183 48.8 0.255 C77.4 2000.00 0.612 145.8 1.488 32.8 0.197 47.7 0.244 C82.6
m PA810T 5 s-parameters v ce = 3 v, i c = 5 ma frequency s 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100.00 0.803 C48.9 13.450 147.0 0.040 65.9 0.892 C23.3 200.00 0.693 C83.5 10.285 124.9 0.059 54.1 0.705 C36.2 300.00 0.594 C108.3 7.895 110.2 0.073 45.6 0.557 C43.4 400.00 0.548 C125.1 6.305 101.7 0.080 44.7 0.468 C45.0 500.00 0.528 C138.0 5.237 94.4 0.086 42.6 0.398 C45.4 600.00 0.520 C149.3 4.554 90.4 0.092 45.2 0.363 C45.2 700.00 0.508 C158.7 3.961 82.8 0.097 45.4 0.334 C44.8 800.00 0.505 C165.6 3.624 79.1 0.106 46.4 0.317 C46.0 900.00 0.505 C171.1 3.283 73.6 0.112 48.6 0.301 C47.1 1000.00 0.519 C176.9 3.009 69.1 0.120 48.0 0.279 C49.9 1100.00 0.527 177.0 2.729 66.0 0.127 50.1 0.262 C52.2 1200.00 0.525 170.1 2.536 61.5 0.135 49.4 0.243 C54.7 1300.00 0.518 166.6 2.399 58.3 0.147 49.9 0.227 C56.2 1400.00 0.513 164.1 2.188 54.6 0.151 50.2 0.211 C57.7 1500.00 0.539 161.2 2.067 50.6 0.162 49.5 0.202 C60.2 1600.00 0.558 158.0 1.945 48.9 0.169 52.1 0.190 C63.7 1700.00 0.565 152.1 1.847 46.0 0.181 50.8 0.179 C68.3 1800.00 0.567 148.5 1.814 43.0 0.194 51.9 0.166 C74.4 1900.00 0.561 145.6 1.737 38.9 0.205 49.8 0.152 C80.5 2000.00 0.574 144.1 1.693 33.8 0.219 47.9 0.142 C86.6 v ce = 3 v, i c = 7 ma frequency s 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100.00 0.729 C58.5 17.087 141.0 0.037 66.1 0.838 C29.0 200.00 0.612 C95.4 12.153 118.7 0.052 52.6 0.618 C42.2 300.00 0.529 C119.9 9.023 105.1 0.064 47.7 0.467 C48.4 400.00 0.492 C135.6 7.052 97.4 0.072 48.8 0.382 C49.2 500.00 0.481 C147.4 5.805 91.0 0.078 49.2 0.321 C48.7 600.00 0.476 C157.4 4.986 87.6 0.087 51.9 0.291 C47.9 700.00 0.469 C166.0 4.341 80.7 0.094 52.3 0.265 C47.0 800.00 0.469 C171.8 3.951 77.3 0.106 53.1 0.248 C47.6 900.00 0.471 C176.4 3.408 71.8 0.112 54.6 0.233 C48.7 1000.00 0.487 178.6 3.268 68.1 0.123 53.4 0.213 C51.0 1100.00 0.497 172.9 2.959 65.2 0.132 55.1 0.197 C53.1 1200.00 0.496 166.5 2.748 60.9 0.142 53.9 0.179 C55.6 1300.00 0.490 163.3 2.598 57.8 0.155 54.0 0.164 C57.0 1400.00 0.485 161.2 2.365 54.4 0.161 53.4 0.149 C59.0 1500.00 0.513 158.7 2.230 50.5 0.172 52.0 0.140 C61.3 1600.00 0.531 155.9 2.100 49.0 0.180 54.1 0.127 C65.2 1700.00 0.539 150.3 1.990 46.2 0.194 52.2 0.115 C70.6 1800.00 0.543 146.9 1.955 43.4 0.207 52.8 0.102 C78.3 1900.00 0.539 144.2 1.867 39.4 0.218 50.2 0.088 C87.0 2000.00 0.552 142.6 1.820 34.3 0.233 47.9 0.080 C95.5
m PA810T 2 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: standard, special, and specific. the specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in standard unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94.11


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