vishay siliconix si7530dp document number: 73249 s09-0223-rev. d, 09-feb-09 www.vishay.com 1 n- and p-channel 60-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfet ? new low thermal resistance powerpak ? package with low 1.07 mm profile ? 100 % r g tested product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) n-ch 60 0.075 at v gs = 10 v 4.6 12 nc 0.100 at v gs = 4.5 v 4.0 p-ch - 60 0.064 at v gs = - 10 v - 5.0 47 0.080 at v gs = - 4.5 v - 4.5 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d1 d1 d2 d2 6.15 mm 5.15 mm bottom view powerp ak so-8 ordering information: SI7530DP-T1-E3 (lead (pb)-free) si7530dp-t1-ge3 (lead (pb)-free and halogen-free) n-channel mosfet d 1 g 1 s 1 s 2 g 2 d 2 p-channel mosfet notes: a. surface mounted on 1? x 1? fr4 board. b. duty cycle 1 %. c. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak so-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulatio n process in manufacturing. a solder fill et at the exposed copper tip cannot be guara nteed and is not required to ensure adequate botto m side solder interconnection. d. rework conditions: manual soldering with a solder ing iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol n-channel p-channel unit 10 s steady 10 s steady drain-source voltage v ds 60 - 60 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a t a = 25c i d 4.6 3.0 - 5.0 - 3.2 a t a = 70c 3.6 2.4 - 4.0 - 2.6 pulsed drain current i dm 15 - 25 continuous source current (diode conduction) a i s 2.7 1.2 - 2.9 - 1.2 single pulse avalanche current l = 0.1 mh i as 15 - 22 single pulse repetitive avalanche energy b e as 11 24.2 mj maximum power dissipation a t a = 25c p d 3.3 1.4 3.5 1.5 w t a = 70c 2.1 0.9 2.2 0.94 operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c, d 260 thermal resistance ratings parameter symbol n-channel p-channel unit typical maximum typical maximum maximum junction-to-ambient a t 10 s r thja 29 38 27 36 c/w steady state 60 85 60 85 maximum junction-to-case (drain) steady state r thjc 4.0 5.2 3.3 4.3
www.vishay.com 2 document number: 73249 s09-0223-rev. d, 09-feb-09 vishay siliconix si7530dp notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 1 3 v v ds = v gs , i d = - 250 a p-ch - 1 - 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v n-ch 100 na p-ch 100 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v n-ch 1 a v ds = - 60 v, v gs = 0 v p-ch - 1 v ds = 60 v, v gs = 0 v, t j = 55c n-ch 5 v ds = - 60 v, v gs = 0 v, t j = 55c p-ch - 5 on-state drain current a i d(on) v ds 5 v, v gs = 10 v n-ch 15 a v ds - 5 v, v gs = - 10 v p-ch - 25 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 4.6 a n-ch 0.060 0.075 v gs = - 10 v, i d = - 5.0 a p-ch 0.051 0.064 v gs = 4.5 v, i d = 4.0 a n-ch 0.080 0.100 v gs = - 4.5 v, i d = - 4.5 a p-ch 0.064 0.080 forward transconductance a g fs v ds = 15 v, i d = 4.6 a n-ch 6 s v ds = - 15 v, i d = - 5.0 a p-ch 16 diode forward voltage a v sd i s = 2.7 a, v gs = 0 v n-ch 0.85 1.2 v i s = - 2.9 a, v gs = 0 v p-ch - 0.85 - 1.2 dynamic b total gate charge q g n-channel v ds = 30 v, v gs = 10 v, i d = 15 a p-channel v ds = - 30 v, v gs = - 10 v, i d = - 5.0 a n-ch 12 20 nc p-ch 26 40 gate-source charge q gs n-ch 2 p-ch 4.5 gate-drain charge q gd n-ch 3.5 p-ch 7 gate resistance r g f = 1.0 mhz n-ch 0.6 1.5 2.5 p-ch 3.5 7 11 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 30 v, r l = 30 i d ? 1 a, v gen = 10 v, r g = 6 p-channel v dd = - 30 v, r l = 30 i d ? - 1 a, v gen = - 10 v, r g = 6 n-ch 7 15 ns p-ch 8 15 rise time t r n-ch 8 15 p-ch 9 15 turn-off delay time t d(off) n-ch 15 25 p-ch 65 100 fall time t f n-ch 7 20 p-ch 30 45 source-drain reverse recovery time t rr i f = 2.7 a, di/dt = 100 a/s n-ch 30 60 i f = - 5 a, di/dt = 100 a/s p-ch 40 80 reverse recovery energy q rr i f = 2.7 a, di/dt = 100 a/s n-ch 33 66 pc i f = - 5 a, di/dt = 100 a/s p-ch 57 115
document number: 73249 s09-0223-rev. d, 09-feb-09 www.vishay.com 3 vishay siliconix si7530dp n-channel typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 3 6 9 12 15 012345 v gs = 10 v thru 4 v 3 v v ds - drain-to-source voltage (v) - drain current (a) i d - on-resistance ( r ds(on) ) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0 3 6 9 12 15 i d - drain current (a) v gs = 10 v v gs = 4.5 v 0 4 8 12 16 20 0 4 8 12162024 v ds = 30 v i d = 15 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t c = 125 c - 55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 100 200 300 400 500 600 700 800 048121620 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 2 5 5 0 7 5 100 125 150 v gs = 10 v i d = 10 a t j - junction temperature (c) r ds(on) - on-resistance (normalized)
www.vishay.com 4 document number: 73249 s09-0223-rev. d, 09-feb-09 vishay siliconix si7530dp n-channel typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c t j = 25 c 40 10 1 v sd - source-to-drain voltage (v) - source current (a) i s - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 02 5 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power 0.000 0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.200 0246810 - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) i d = 4.6 a 0 60 100 20 40 power (w) t ime (s) 80 10 0.01 0.001 1 0.1 t a = 25 c single pulse safe operating area, junction-to-case 100 1 0.1 1 10 100 0.01 10 1 ms - drain current (a) i d 0.1 10 ms 100 ms dc 10 s 100 s t a = 25 c single pulse bvdss limited i d(on) limited 1 s 10 s limited by i dm ds(on) * limited by r v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 100 s
document number: 73249 s09-0223-rev. d, 09-feb-09 www.vishay.com 5 vishay siliconix si7530dp n-channel typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 60 c/w 3. t jm - t a = p dm z thja (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 - 2 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 0.02 10 10 - 3 single pulse
www.vishay.com 6 document number: 73249 s09-0223-rev. d, 09-feb-09 vishay siliconix si7530dp p-channel typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 0246810 v gs = 10 v thru 5 v 3 v v ds - drain-to-source voltage (v) - drain current (a) i d 4 v 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0 5 10 15 20 25 30 v gs = 10 v - on-resistance ( ) r ds(on) i d - drain current (a) v gs = 4.5 v 0 4 8 12 16 20 0 1020304050 v ds = 30 v i d = 5 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 c t c = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 300 600 900 1200 1500 1800 0 102030405060 c rss c oss c iss v - drain-to-source voltage (v) c - capacitance (pf) ds 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 2 5 5 0 7 5 100 125 150 v gs = 10 v i d = 5 a t j - junction temperature (c) r ds(on) - on-resistance (normalized)
document number: 73249 s09-0223-rev. d, 09-feb-09 www.vishay.com 7 vishay siliconix si7530dp p-channel typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 40 10 1 - source current (a) i s - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 1.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperature ( c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 2468 10 - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v) i d = 5 a 0.001 0 1 80 100 20 10 0.01 t ime (s) 60 40 power (w) 0.1 safe operating area 100 1 0.1 1 10 100 0.001 10 t a = 25 c single pulse - drain current (a) i d 0.1 limited by r ds(on) * 0.01 1 ms 10 ms 100 s, dc 10 s 100 s 100 ms 1 s 10 s v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds ( on) is specified
www.vishay.com 8 document number: 73249 s09-0223-rev. d, 09-feb-09 vishay siliconix si7530dp p-channel typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73249 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 110 10 -1 10 -4 600 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r th ja = 52 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 - 3 10 - 2 1 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w ave pulse duration (s) normalized ef fective transient thermal impedance
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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