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mil-prf-19500/614b 22 february 2002 superseding mil-prf-19500/614a 3 may 1996 performance specification semiconductor device, field effect radiation hardened transistor, n-channel, silicon, types 2n7380 and 2n7381 jantxv m, d, r, f, g, and h, jans m, d, r, f, g, and h this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the detail requi rements for an n-channel, radiation hardened, enhancement mode, mosfet, power transistor intended for use in high density power switching applications. two levels of product assurance are provided for each device type as s pecified in mil-prf-19500, with avalanche energy ratings (e as ) and maximum avalanche current (i as ). 1.2 physical dimensions . see figure 1 (t0-257aa). 1.3 maximum ratings . unless otherwise specified, t c = +25 c. type min v (br)dss v gs = 0 v i d = 1.0 ma dc p t (1) t c = +25 c p t t a = +25 c (free air) v gs i d1 (2) t c = +25 c i d2 (2) t c = +100 c t j and t stg 2n7380 2n7381 v dc 100 200 w 75 75 w 2 2 v dc 20 20 a dc 14.4 9.4 a dc 9.1 6.0 c -55 to +150 -55 to +150 i s i dm max r ds(on) (1) v gs = 12 v dc i d = i d2 r jc max e as max i as type (3) t j = +25 c t j = +150 c 2n7380 a dc 14.4 a(pk) 57 ? 0.18 ? 0.33 c/w 1.67 mj 150 a dc 14.4 2n7381 9.4 37 0.40 0.84 1.67 150 9.4 (1) derate linearly by 0.6 w/ c for t c > +25 c; p t = t jmax - t c r jc ) t at r )x( r ( t - t = i jmax ds jc c j d on max (3) i dm = 4 x i d1 ; i d1 as calculated by footnote (2). amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. inch-pound the documentation and process conversion measures necessary to comply with this revision shall be completed by 22 may 2002. beneficial comments (recommendations, addi tions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: defense suppl y center columbus, attn: dscc-vac, p.o. box 3990 columbus, oh 43216-5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter. (2)
mil-prf-19500/614b 2 1.4 primary electric al characteristics . unless otherwise specified, t c = +25 c. min v (br)dss v gs(th)1 i dss max v gs = 0 v max r ds(on)1 (1) v gs = 12 v; i d = i d2 type v gs = 0 v i d = 1.0 ma dc v ds v gs i d = 1.0 ma dc v ds = 80 percent of rated v ds t j = +25 c v dc v dc a dc ? min max 2n7380 100 2.0 4.0 25 0.18 2n7381 200 2.0 4.0 25 0.40 (1) pulsed (see 4.5.1). 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification \ department of defense mil-prf-19500 - semiconductor devi ces, general specification for. standard department of defense mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. no thing in this document, howev er, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements * 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500.
mil-prf-19500/614b 3 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. all terminals are isolated from case. 4. this area is for the lead feed-thru eyelets (confi guration is optional, but will not extend beyond this zone). figure 1. dimensions and configuration (t0-257aa) . inches millimeters ltr min max min max bl .410 .420 10.41 10.67 bl 1 .033 0.84 ch .190 .200 4.83 5.08 ld .025 .035 0.64 0.89 ll .600 .650 15.24 16.51 lo .120 bsc 3.05 bsc ls .100 bsc 2.54 bsc mhd .140 .150 3.56 3.81 mho .527 .537 13.39 13.64 tl .645 .665 16.38 16.89 tt .035 .045 0.89 1.14 tw .410 .420 10.41 10.67 term 1 drain term 2 source term 3 gate see note 4
mil-prf-19500/614b 4 * 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). * 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500 * 3.4 interface and physical dimensions . interface and physical dimensi ons shall be as specified in mil-prf-19500, and on figure 1. methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent al 2 o 3 (ceramic). examples of su ch construction techniques are metallized ceramic eyelets or ceramic walled packages. * 3.4.1 lead finish . lead finish shall be solderable in accordanc e with mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it sha ll be specified in the acquisition document (see 6.2). 3.4.2 internal construction . multiple chip construction shall not be permitted. 3.5 marking . marking shall be in accordance with mil-prf-19500. 3.6 electrostatic discharge protection . the devices covered by this specific ation require electrostatic protection. 3.6.1 handling . mos devices must be handled with certain prec autions to avoid damage due to the accumulation of static charge. the following handling procedures shall be followed: a. devices shall be handled on benches with conductive handling devices. b. ground test equipment, tools, and personnel handling devices. c. do not handle devices by the leads. d. store devices in conductive foam or carriers. e. avoid use of plastic, r ubber, or silk in mos areas. f. maintain relative humidity above 50 percent, if practical. g. care shall be exercised, during test and tr oubleshooting, to apply not more than maximum rated voltage to any lead. h. gate must be terminated to source. r 100 k, whenever bias voltage is to be applied drain to source. * 3.7 electrical perfo rmance characteristics . unless otherwise specified her ein, the electrical performance characteristics are as specified in 1.3. * 3.8 electrical test requirements . the electrical test requirements shall be group a as specified herein. * 3.9 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance.
mil-prf-19500/614b 5 4. verification * 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4 and tables i and ii). 4.2 qualification inspection . qualification inspection shall be in accordance with mil-prf-19500. * 4.2.1 group e inspection . group e inspection shall be conducted in accordance with mil-prf-19500, and table iii herein. * 4.3 screening (jans and jantxv levels only) . screening shall be in accordance with table iv of mil-prf-19500, and as specified herein. the following m easurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. measurement screen (see table iv of mil-prf-19500) jans level jantxv level (1) thermal response (see 4.5.3) thermal response (see 4.5.3) (1) (2) method 3470 of mil-std-750. (see 4.5.5) method 3470 of mil-std-750. (see 4.5.5) (1) (2) gate stress test (see 4.5.4) gate stress test (see 4.5.4) (1) 9 i gss1 , i dss1 , subgroup 2 of table i herein; not applicable 10 method 1042 of mil-std-750, test condition b method 1042 of mil-std-750, test condition b 11 i gss1 , i dss1 , r ds(on)1 , v gs(th)1 subgroup 2 of table i herein. ? i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. ? i dss1 = 25 a dc or 100 percent of initial value, whichever is greater. i gss1 , i dss1 , r ds(on)1 , v gs(th)1 subgroup 2 of table i herein. 12 method 1042 of mil-std-750, test condition a t = 240 hours method 1042 of mil-std-750, test condition a 13 subgroup 2 and 3 of table i herein. ? i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. ? i dss1 = 25 a dc or 100 percent of initial value, whichever is greater. ? r ds(on)1 = 20 percent of initial value. ? v gs(th)1 = 20 percent of initial value. subgroup 2 of table i herein. ? i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. ? i dss1 = 25 a dc or 100 percent of initial value, whichever is greater. ? r ds(on)1 = 20 percent of initial value. ? v gs(th)1 = 20 percent of initial value. (1) shall be performed anytime before screen 10. (2) this is a stress test designed to ensure a rugged product.
mil-prf-19500/614b 6 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500 and as specified herein. 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500 and table i herein. electrical measurements ( end-points) and delta requirements shall be in accordance with the applicable steps of table i, subgroup 2 herein. 4.4.2 group b inspection (jantx and jantxv) . group b inspection shall be conducted in accordance with the conditions specified for subgroup testi ng in table via (jans) and table vib (jantx and jantxv) of mil-prf-19500, and as follows. electrical measurement s (end-points) shall be in accordance wi th the applicable inspections of table i, group a, subgroup 2 herein. * 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500 . subgroup method condition b3 1051 condition g b4 1042 the heating cycle shall be 1 minute minimum, 2,000 cycles. no heat sink nor forced air cooling on the device shall be permitted. b5 1042 condition a; v ds = 100 percent of rated; t a = +175 c, t = 120 hours or t a = +150 c, t = 240 hours; read and record v br(dss) (pre and post) at i d = 1 ma; read and record i dss (pre and post), in accordance with table i, group a, subgroup 2. b5 1042 condition b; v gs = 100 percent of rated t a = +175 c, t = 24 or t a = +150 c, t = 48 hours;. b6 3161 see 4.5.3. 4.4.2.2 group b inspection, table vib (jantx and jantxv) of mil-prf-19500 . subgroup method condition b2 1051 condition g b3 1042 the heating cycle shall be 1 minute minimum. 4.4.3 group c inspection . group c inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in table vii of mil-prf-19500, and as follo ws. electrical measurement s (end-points) shall be in accordance with the applicable inspections of table i, group a, subgroup 2 herein. 4.4.3.1 group c inspection, table vii of mil-prf-19500 . subgroup method condition c2 2036 test condition a, weight = 10 lbs, t = 10 seconds. c6 1042 the heating cycle shall be 1 minute minimum. 4.5 methods of inspection . methods of inspection shall be as spec ified in appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurements sha ll be as specified in section 4 of mil-std-750.
mil-prf-19500/614b 7 * 4.5.2 thermal resistance . thermal resistance measurements shall be performed in accordance with method 3161 of mil-std-750. the maximum limit of r jc(max) shall be 1.67 c/w. the following parameter measurements shall apply: a. measuring current (i m ): ............................ 10 ma. b. drain heating current (i h ): ........................ 2 a minimum. c. heating time (t h ): ..................................... steady-state (see method 3161 of mil-std-750 for definition). d. drain-source heating voltage (v h ): .......... 15 v minimum. e. measurement time delay (t md ): ................ 30 s to 60 s maximum. f. sample window time (t sw ): ...................... 10 s maximum. * 4.5.3 thermal impedance ( z jc measurements) . the z jc measurements shall be performed in accordance with mil-std-750, method 3161. the maximum limit (not to exceed figure 2, thermal impedance curves and the group a, subgroup 2 limits) for z jc in screening (table iv of mil-prf-19500) s hall be derived by each vendor by means of statistical process control. when the process has exhi bited control and capability, the capability data shall be used to establish the fixed screening limit. in addition to screening, once a fixed limit has been establish ed, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable x, r chart. if a lot exhibits an out of control condition, the entire lot sha ll be removed from the line and held for engineering evaluation and disposition. this procedure may be used in lieu of an in line process monitor. a. measuring current (i m ): .....................................10 ma. b. drain heating current (i h ):.................................2 a minimum. c. heating time (t h ): ..............................................50 ms. d. drain-source heating voltage (v h ):...................15 v minimum. e. measurement time delay (t md ): .........................30 s to 60 s maximum. f. sample window time (t sw ): ...............................10 s maximum. 4.5.4 gate stress test . a. v gs = 24 v minimum. b. t = 250 s minimum. * 4.5.5 single pulse avalanche energy (e as ) . a. peak current (i as ): i d1 . b. peak gate voltage (v gs ): 12 v. c. gate to source resistor (r gs ): 25 r gs 200 ? . d. initial case temperature: +25 c +10 c, -5 c. e. inductance: (2 e as /(i d1 ) 2 )((v br - v dd )/v br ) mh minimum. f. number of pulses to be applied: 1 pulse minimum. g. supply voltage v dd = 50 v, or 25 v for 100 v devices.
mil-prf-19500/614b 8 * table i. group a inspection . inspection 1 / mil-std-750 symbol limits unit method condition min max subgroup 1 visual and mechanical inspection 2071 subgroup 2 thermal impedance 2 / 3161 see 4.5.3 z jc 1.30 c/w breakdown voltage drain to source 3407 v gs = 0v, i d = 1 ma dc, bias condition c v (br)dss 2n7380 100 v dc 2n7381 200 v dc gate to source voltage (threshold) 3403 v ds v gs , i d = 1.0 ma v gs(th)1 2.0 4.0 v dc gate current 3411 v gs = 20 v dc, v ds = 0 v dc, bias condition c i gss1 100 a dc drain current 3413 v gs = 0 v dc, v ds = 80 percent of rated v ds , bias condition c i dss1 25 a dc static drain to source on-state resistance 3421 v gs = 12 v dc, condition a, pulsed (see 4.5.1), i d = rated i d2 (see 1.3) r ds(on)1 2n7380 0.18 ? 2n7381 0.40 ? static drain to source on-state resistance 3421 v gs = 12 v dc, condition a, pulsed (see 4.5.1), i d = rated i d1 (see 1.3) r ds(on)2 2n7380 0.20 ? 2n7381 0.49 ? forward voltage (source drain diode) 4011 v gs = 0 v dc, i d = rated i d1 pulsed (see 4.5.1) v sd 2n7380 1.8 v dc 2n7381 1.4 v dc see footnotes at end of table.
mil-prf-19500/614b 9 * table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limits unit method condition min max subgroup 3 high temperature operation: t a = +125 c gate current 3411 bias condition c, v gs = 20 v dc, v ds = 0 v dc i gss2 200 na dc drain current 3413 bias condition c, v gs = 0 v dc, v ds = 80 percent of rated v ds i dss3 0.25 na dc static drain to source on-state 3421 v gs = 12 v dc, pulsed (see 4.5.1), i d = rated i d2 r ds(on)3 2n7380 0.35 ? 2n7381 0.75 ? gate to source voltage (threshold) 3403 v ds v gs , i d = 1.0 ma dc v gs(th)2 1.0 v dc low temperature operation: t a = -55 c gate to source voltage (threshold) 3403 v ds v gs , i d = 1.0 ma dc v gs(th)3 5.0 v dc subgroup 4 switching time test 3472 i d = rated i d1 , v gs = 12 v dc, gate drive impedance = 7.5 ? , v dd = 50 percent of v br(dss) turn-on delay time t d(on) 25 ns rise time t r 2n7380 60 ns 2n7381 50 ns turn-off delay time t d(off) 2n7380 40 ns 2n7381 70 ns fall time t f 2n7380 30 ns 2n7381 60 ns see footnotes at end of table.
mil-prf-19500/614b 10 * table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limits unit method condition min max subgroup 4 - continued forward transconductance 3475 i d = i d2 , v dd = 15 v dc see 4.5.1 g fs 2.5 s subgroup 5 safe operating area test (high voltage) 3474 see figures 3 and 4; t p = 10 ms, v ds = 80 percent of rated v br(dss) , v ds = 200 v maximum electrical measurements see table i, group a, subgroup 2 subgroup 6 not applicable subgroup 7 gate charge 3471 condition b on-state gate charge q g(on) 2n7380 40 nc 2n7381 50 nc gate to source charge q gs 10 nc gate to drain charge q gd 2n7380 20 nc 2n7381 25 nc reverse recovery time 3473 d i /d t 100 a/ s, v dd 50 v, i d = i d1 t rr 2n7380 275 ns 2n7381 460 ns 1 / for sampling plan, see mil-prf-19500. 2 / this test is required for the following endpoint measurements only: jans - group b, subgroup 3 and 4; jantx and jant xv - group b, subgroup 2 and 3; group c, subgroup 6; group e, subgroup 1.
mil-prf-19500/614b 11 table ii. group d inspection . inspection 1 / 2 / 3 / mil-std-750 symbol pre-irradiation limits post-irradiation limits unit method conditions m, d, and r f, g, and h 4 / m, d, and r f, g, and h 4 / min max min max min max min max subgroup 2 t c = +25 c steady-state total dose irradiation (v gs bias) 5 / 1019 v gs = 12 v v ds = 0 v steady-state total dose irradiation (v ds bias) 5 / 1019 v gs = 0 v, v ds = 80 percent of rated v ds (pre- irradiation) end-point electrical: breakdown voltage, drain to source 3407 v gs = 0 v, i d = 1 ma bias condition c v (br)dss 2n7380 100 100 100 100 v dc 2n7381 200 200 200 200 v dc gate to source voltage 4 / (threshold) 3403 v ds v gs i d = 1 ma v gsth 2.0 4.0 2.0 4.0 2.0 4.0 1.25 4.5 v dc gate current 3411 v gs = 20 v v ds = 0 v, bias condition c i gssf1 100 100 100 100 na dc gate current 3411 v gs = 20 v v ds = 0 v, bias condition c i gssr1 -100 -100 -100 -100 na dc see footnotes at end of table.
mil-prf-19500/614b 12 *table ii. group d inspection - continued. inspection 1 / 2 / 3 / mil-std-750 symbol pre-irradiation limits post-irradiation limits unit method conditions m, d, and r f, g, and h 4 / m, d, and r f, g, and h 4 / min max min max min max min max subgroup 2 - continued t c = +25 c drain current 3413 v gs = 0 v bias condition c v ds = 80 percent of rated v ds (pre- irradiation) i dss 2n7380 25 25 25 50 a dc 2n7381 25 25 25 50 a dc static drain to source on-state voltage 3405 v gs = 12 v, condition a pulsed, see 4.5.1. i d = i d2 v ds(on) 2n7380 1.638 1.638 1.638 2.184 v dc 2n7381 2.4 2.4 2.4 3.18 v dc forward voltage source drain diode 4011 v gs = 0 v, i d = i d1 , bias condition c v sd 2n7380 1.8 1.8 1.8 1.8 v 2n7381 1.4 1.4 1.4 1.4 v 1 / for sampling plan, see mil-prf-19500. 2 / separate samples shall be pulled for each bias. 3 / group d qualification may be performed anytime prior to lo t formation. wafers qualified to these group d qci requirements may be used for any other specif ication sheet utilizing the same die design. 4 / the f designation represents devices which pass end- points at both 100k and 300k rads (si). the g designation represents devices which pass 100k, 300k and 600k r ad (si) end-points. 5 / h must meet end points fo r 300k and 1,000k rad (si).
mil-prf-19500/614b 13 table iii. group e inspection (all qualit y levels) - for qualification only . inspection mil-std-750 qualification and large lot method conditions quality conformance inspection subgroup 1 12 devices, c = 0 temperature cycling 1051 test condition g, 500 cycles hermetic seal 1071 fine leak gross leak electrical measurements see table i, group a, subgroup 2 subgroup 2 1 / 12 devices, c = 0 steady-state reverse bias 1042 condition a, 1,000 hours electrical measurements see table i, group a, subgroup 2 steady-state reverse bias 1042 condition b, 1,000 hours subgroup 3 not applicable subgroup 4 12 devices, c = 0 thermal resistance 3161 see 4.5.2 subgroup 5 not applicable 1 / a separate sample for each test may be pulled.
mil-prf-19500/614b 14 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) * figure 2. thermal response curves.
mil-prf-19500/614b 15 figure 3. safe operating area graphs .
mil-prf-19500/614b 16 figure 4. safe operating area graphs .
mil-prf-19500/614b 17 5. packaging * 5.1 packaging . for acquisition purposes, the packaging requirement s shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control point's packaging ac tivity within the military department or defense agency, or within the military department's system command. packaging data retrieval is available from the managing military department's or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or ex planatory nature that may be hel pful, but is not mandatory.) 6.1 intended use . the notes specified in mil-prf-19500 are applicable to this specification. * 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2). c. packaging requirements (see 5.1). d. lead finish (see 3.3.1). 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for inclus ion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualific ation of products may be obtained from defense supply center, columbus, attn: dscc/ vqe, p.o. box 3990, columbus, oh 43216-5000. 6.4 supersession data . this specification supersedes d esc drawing 89009, dated 19 december 1989. * 6.5 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-2578) nasa - na review activities: army - ar, sm navy - as, mc, os air force - 19
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a r eply within 30 days from receipt of the form. note: this form may not be used to reques t copies of documents, nor to request waiv ers, or clarificati on of requirements on current contracts. comments submitted on th is form do not constitute or imply author ization to waive any portion of the refere nced document(s) or to amend c ontractual requirements. i recommend a change: 1. document number mil-prf-19500/614b 2. document date 22 february 2002 3. document title semiconductor device, field effect radiation hardened transistor, n-channel, silicon, types 2n7380 and 2n7381 jantxv m, d, r, f, g, and h, jans m, d, r, f, g, and h 4. nature of change (identify paragraph number and include propos ed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692- 6939 alan.barone@dscc.dla.mil c. address defense supply center columbus attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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