2sd1609, 2sd1610 silicon npn epitaxial ade-208-916 (z) 1st. edition sep. 2000 application low frequency high voltage amplifier complementary pair with 2sb1109 and 2sb1110 outline 1. emitter 2. collector 3. base to-126 mod 1 2 3 absolute maximum ratings (ta = 25?) ratings item symbol 2sd1609 2sd1610 unit collector to base voltage v cbo 160 200 v collector to emitter voltage v ceo 160 200 v emitter to base voltage v ebo 55v collector current i c 100 100 ma collector power dissipation p c 1.25 1.25 w junction temperature tj 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 c
2sd1609, 2sd1610 2 electrical characteristics (ta = 25?) 2sd1609 2sd1610 item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo 160 200 v i c = 10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo 160 200 v i c = 1 ma, r be = emitter to base breakdown voltage v (br)ebo 5 5 vi e = 10 m a, i c = 0 collector cutoff current i cbo 10 m av cb = 140 v, i e = 0 10 v cb = 160 v, i e = 0 dc current tarnsfer ratio h fe1 * 1 60 320 60 320 v ce = 5 v, i c = 10 ma h fe2 30 30 v ce = 5 v, i c = 1 ma base to emitter voltage v be 1.5 1.5 v v ce = 5 v, i c = 10 ma collector to emitter saturation voltage v ce(sat) 2 2 v i c = 30 ma, i b = 3 ma gain bandwidth product f t 140 140 mhz v ce = 5 v, i c = 10 ma collector output capacitance cob 3.8 3.8 pf v cb = 10 v, i e = 0, f = 1 mhz note: 1. the 2sd1609 and 2sd1610 are grouped by h fe1 as follows. bcd 60 to 120 100 to 200 160 to 320 maximum collector dissipation curve 1.5 1.0 0.5 0 50 100 150 ambient temperature ta ( c) collector power dissipation p c (w) typical output characteristics 20 16 12 8 4 024 collector to emitter voltage v ce (v) 10 8 6 collector current i c (ma) i b = 0 10 m a 20 30 40 60 70 80 90 100 110 120 50
2sd1609, 2sd1610 3 100 50 20 10 5 2 1 0 0.2 collector current i c (ma) 0.4 base to emitter voltage v be (v) 0.6 1.0 0.8 typical transfer characteristics v ce = 5 v ta = 75 c ?5 25 500 200 100 50 20 10 5 1 2 20 100 10 50 dc current transfer ratio h fe 5 collector current i c (ma) v ce = 5 v pulse dc current transfer ratio vs. collector current ta = 75 c 25 ?5 saturation voltage vs. collector current i c = 10 i b pulse 5 2 1.0 0.5 0.2 0.1 0.05 collector to emitter saturation voltage v ce(sat) (v) base to emitter saturation voltage v be(sat) (v) 12 10 collector current i c (ma) 550 20 100 v be(sat) v ce(sat) ta = ?5 c ta = ?5 c 25 75 75 25 gain bandwidth product vs. collector current 500 200 100 50 20 10 5 1.0 0.5 2 collector current i c (ma) 20 10 50 5 gain bandwidth product f t (mhz) v ce = 10 v
2sd1609, 2sd1610 4 50 20 10 5 2 1.0 0.5 1 collector output capacitance c ob (pf) 2510 collector to base voltage v cb (v) 20 100 50 collector output capacitance vs. collector to base voltage f = 1 mhz i e = 0
2sd1609, 2sd1610 5 package dimensions 3.1 f +0.15 ?.1 8.0 0.5 2.3 0.3 1.1 3.7 0.7 11.0 0.5 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2 2.7 0.4 120 120 120 hitachi code jedec eiaj mass (reference value) to-126 mod 0.67 g unit: mm
2sd1609, 2sd1610 6 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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