feature excellent high frequency characteristics f t = 1.1 ghz typ cob = 4.2 pf typ high gain bandwidth product low collector output capacitance high breakdown voltage v ceo = 100 v absolute maximum ratings (ta = 25?) item symbol rating unit collector to base voltage v cbo 100 v collector to emitter voltage v ceo 100 v emitter to base voltage v ebo 3v collector current i c 0.2 a collector peak current i c(peak) 0.5 a collector power dissipation p c 1w p c *1 5w junction temperature tj 150 ? storage temperature tstg ?5 to ? +150 note: 1. value at t c = 25?. 1 2 3 to-126 mod 1. emitter 2. collector 3. base electrical characteristics (ta = 25?) item symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 100 v i c = 10 ?, i e = 0 collector to emitter breakdown voltage v (br)ceo 100 v i c = 1 ma, r be = collector cutoff current i cbo 1.0 ? v cb = 80 v, i e = 0 emitter cutoff current i ebo 10 ? v eb = 3 v, i c = 0 dc current transfer ratio h fe *1 60 200 v ce = 10 v, i c = 10 ma 2SC4708 silicon npn epitaxial high resolution monitor video output
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