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t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp ? featur es 4 123 4 123 up t o 2.7 ghz freque ncy ban d w e b site : www .sei. c o. jp /gaasic/ bey o nd +2 8 d b m outp u t p o wer up to + 4 3db m output ip3 high drain ef ficie n cy 1 2db gain at 2.1ghz sot - 89 smt package low noise figure ? applicat io ns w i reless com m unication syste m cellular , pcs, phs, w - cdm a , wlan ? descrip t io n p012 00 08p is a hig h p e rform ance gaas mesfet ho use d i n a low-c o st s o t - 89 p ack ag e. our ori g i n a lly de vel o ped " pulse-d op ed" c h an ne l stru ctur e has rea liz ed lo w distor tio n, which lea d s to hig h ip3. th e c h an ne l struc t ure also ac hi ev ed an extr em ely lo w nois e fi gure . the de tai l s a b o u t pu lse-d o p e d fet cha n n e l are des c rib e d in our pro duc ts ca tal o g . utili zat io n of ausn di e att a c h has re al ize d a l o w a n d sta b l e therm a l resista n ce. the l e a d fr ame is p l at ed with sn-bi to make the dev i c e pb-fr ee . sei? s long h i st ory of m a nufacturi ng has c u l tiv ate d h i g h dev i ce re lia bi li t y . t h e est i m a ted mttf of t h e fet is lo nger tha n 1 5 y ears a t tj of 15 0c. y ou ca n see t h e det a ils in reli ab il ity and quality assura nce. ? functional diagram pin no. functi on 1 i n p u t / g a t e 2, 4 gr o u n d 3 o u t p u t/drain ? ordering information part no description number of devices container p012 00 08p gaas power fet 10 00 7? r e el KP028J 2. 1 1 - 2 . 1 7 g hz app licatio n circu it 1 anti-sta tic bag ? absolute maximum r a tings (@t c =25c) p a r a m e t e r s y m b o l v a l u e units drain-source v o lt age vds 10 v gate-sourc e v o lta ge vgs - 4 v drain current ids idss --- rf inpu t power (cont in uo us) p i n 2 0 (* ) d b m power dissipa ti on pt 2.7 7 w junc ti on t e m p erature tj 15 0 ( **) c s t orage t e m p erature t s tg - 40 to +150 c t c : case t e m p er atu r e. op er ating th e d e v i ce b e yond an y o f th ese values m a y cause pe rm anent da mage. (* ) m eas ure d at 2. 1g hz wi t h o u r t e st fi xt ure m a t c hed t o ip 3. (* *) r ecom m ended t j un de r ope rat i o n i s bel o w 1 2 5 c . ? electrica l specification s (@t c =25 c) va l u e s p a r a m e t e r s y m b o l t e s t condition s m i n . t y p . max. units saturated drain current idss vds=3v , vg=0v --- --- 760 ma t r a n s c o n d u c t a n c e g m vds=8v , ids=300m a 250 --- --- ms pinchof f v o ltage vp vds=8v , ids=30 m a - 3.0 --- - 1.7 v gate-sourc e br eak down v o lt ag e |vgs 0 | igso= - 30 a 3 . 0 - - - - - - v dc therm a l resista n ce rth cha nne l-case --- - - - 4 5 c/w freque ncy f 2 . 7 g h z output power @ 1db gai n c o m p ression p 1 d b 3 0 - - - dbm s m all signal g a in g 12 --- db output ip3 ip3 --- 43 --- dbm rf power added ef ficiency ad d vds=8v ids=22 0m a f=2. 1ghz --- 5 3 - - - % -1-
t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric ? vg s= 0 v -2 . 0 v -1 . 5 v -1 . 0 v -0 . 5 v vd s ( v) 1000 750 500 250 0 0 24 6 8 t o t a l p o w e r d i s s ip a t io n ( w ) tc ( c) 3 4 2 1 0 0 50 100 150 200 d r ai n c u r r en t ( m a ) t r an s f er cu r v e po w e r d e r at i n g c ur v e 0 24 6 8 0 24 6 8 t o t a l p o w e r d i s s ip a t io n ( w ) tc ( c) 3 4 2 1 0 0 t o t a l p o w e r d i s s ip a t io n ( w ) tc ( c) 3 4 2 1 0 0 50 100 150 200 d r ai n c u r r en t ( m a ) t r an s f er cu r v e po w e r d e r at i n g c ur v e ? t c =2 5c , vds= 8v , ids=220ma, com m on source, zo= 5 0 ? ( c ali b rat e d to de vic e l eads) 0 1. 0 1. 0 -1 . 0 10 . 0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4. 0 4 . 0 - 4 . 0 0. 2 0 . 2 - 0 . 2 0. 4 0 . 4 - 0 . 4 0. 6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 s11 s22 1. 2g h z 1. 2g h z 2. 4g h z 2. 4g h z 0 1. 0 1. 0 -1 . 0 10 . 0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4. 0 4 . 0 - 4 . 0 0. 2 0 . 2 - 0 . 2 0. 4 0 . 4 - 0 . 4 0. 6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 s11 s22 1. 2g h z 1. 2g h z 2. 4g h z 2. 4g h z 0 4 5 90 13 5 -1 8 0 - 135 -9 0 -4 5 s21 s12 1. 2g h z 1.2 g h z 2.4 g h z 2. 4 g h z 4. 0 2. 0 6. 0 0 0 0 . 0 2 0 .0 4 0 .0 6 sc a l e f o r | s 12 | sc a l e f o r | s 21 | 0 4 5 90 13 5 -1 8 0 - 135 -9 0 -4 5 s21 s12 1. 2g h z 1.2 g h z 2.4 g h z 2. 4 g h z 4. 0 2. 0 6. 0 0 0 0 . 0 2 0 .0 4 0 .0 6 sc a l e f o r | s 12 | sc a l e f o r | s 21 | specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp -2- w e b site : www .sei. c o. jp /gaasic/
t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric t c =2 5c , vds= 8v , ids=180ma, com m on source, zo= 5 0 ? ( c ali b rat e d to de vic e l eads) 0 1. 0 1. 0 -1 . 0 10 . 0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4. 0 4 . 0 - 4 . 0 0. 2 0. 2 - 0 . 2 0. 4 0 . 4 - 0 . 4 0. 6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 s1 1 s2 2 1.2g h z 1.2g h z 2.4g h z 2.4g h z 0 1. 0 1. 0 -1 . 0 10 . 0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4. 0 4 . 0 - 4 . 0 0. 2 0. 2 - 0 . 2 0. 4 0 . 4 - 0 . 4 0. 6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 s1 1 s2 2 1.2g h z 1.2g h z 2.4g h z 2.4g h z 0 45 90 1 35 - 180 -1 3 5 -9 0 -4 5 s2 1 s1 2 1.2g h z 1.2g h z 2.4g h z 2.4g h z 2.0 4.0 6.0 0 0 0 .02 0 .04 0 .06 s c a l e f o r | s 12| sca l e f o r | s 21| 0 45 90 1 35 - 180 -1 3 5 -9 0 -4 5 s2 1 s1 2 1.2g h z 1.2g h z 2.4g h z 2.4g h z 2.0 4.0 6.0 0 0 0 .02 0 .04 0 .06 s c a l e f o r | s 12| sca l e f o r | s 21| ids ids = 220m a f re q(g h z ) s 11 m a g s 11a ng s 21 m a g s 21 a n g s 12 m a g s 12 a n g s 22 m a g s 22 a n g 1.2 0 .741 -157.9 5 .797 77. 8 0 .047 35.3 0 .151 -131.4 1.4 0 .740 -168.8 5 .052 69. 4 0 .050 33.3 0 .160 -140.8 1.6 0 .740 -178.1 4 .480 61. 7 0 .053 31.2 0 .173 -147.8 1.8 0 .737 173.7 4 .025 54.4 0 .056 29.1 0 .183 -152.5 2.0 0 .734 165.7 3 .666 47.3 0 .059 26.8 0 .190 -157.5 2.2 0 .730 158.1 3 .367 40.4 0 .063 24.2 0 .197 -160.7 2.4 0 .730 150.5 3 .120 33.5 0 .067 21.1 0 .195 -166.7 = 180m a f re q(g h z ) s 11 m a g s 11a ng s 21 m a g s 21 a n g s 12 m a g s 12 a n g s 22 m a g s 22 a n g 1.2 0 .741 -157.9 5 .791 77. 9 0 .047 34.6 0 .158 -137.1 1.4 0 .739 -168.8 5 .046 69. 5 0 .050 32.4 0 .168 -146.2 1.6 0 .738 -178.1 4 .475 61. 9 0 .053 30.3 0 .181 -152.8 1.8 0 .736 173.7 4 .022 54.6 0 .056 28.1 0 .190 -157.4 2.0 0 .732 165.7 3 .663 47.5 0 .059 25.8 0 .197 -162.2 2.2 0 .728 158.1 3 .364 40.7 0 .063 23.2 0 .203 -165.4 2.4 0 .728 150.5 3 .119 33.8 0 .067 20.0 0 .201 -171.5 [note] y ou ca n d o wnl o a d t h e s-param e ter list fro m our web si te: www .sei.co.jp/gaasic / specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp -3- w e b site : www .sei. c o. jp /gaasic/
t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric i d s = 2 2 0 m a i d s = 1 8 0 m a -1 0 0 -8 0 -6 0 -4 0 -2 0 0 20 40 60 80 - 1 5 - 1 0 - 5 0 5 10 15 20 po u t ( d b m ) ga i n ( d b ) im 3 ( d bm ) ip 3 ( d bm ) im 3 / p o u t ( d b c ) ad d ( % ) pi n ( d b m ) po u t ga i n ip 3 ad d im 3 im3 / p o u t -1 0 0 -8 0 -6 0 -4 0 -2 0 0 20 40 60 80 - 1 5 - 1 0 - 5 0 5 10 15 20 po u t ( d b m ) ga i n ( d b ) im 3 ( d bm ) ip 3 ( d bm ) im 3 / p o u t ( d b c ) ad d ( % ) pi n ( d b m ) po u t ga i n ip 3 ad d im 3 im3 / p o u t - 100 -8 0 - 100 -8 0 -6 0 -4 0 -2 0 0 20 40 60 80 -1 5 - 1 0 -5 0 5 1 0 1 5 2 0 po u t (d b m ) ga i n ( d b ) im3 ( d b m ) ip 3 ( d bm ) im3 / p o u t ( d b c ) ad d ( % ) pi n ( d b m ) po u t ga i n ip 3 ad d im 3 im 3 / p o u t -6 0 -4 0 -2 0 0 20 40 60 80 -1 5 - 1 0 -5 0 5 1 0 1 5 2 0 po u t (d b m ) ga i n ( d b ) im3 ( d b m ) ip 3 ( d bm ) im3 / p o u t ( d b c ) ad d ( % ) pi n ( d b m ) po u t ga i n ip 3 ad d im 3 im 3 / p o u t d e vi c e : p 0 1 200 08 p f r e que nc y: f 1 = 2 . 1 g h z f 2 = 2 . 1 0 1 g h z b i a s : v ds = 8 v , i d s = 22 0m a s o ur c e m a t c hi ng: m a g 0 . 7 5 a n g - 1 69 . 5 l o a d ma t c hi ng : m a g 0. 36 ang 175 . 9 d e v i c e : p 0 1 2 00 08 p f r e q ue nc y: f 1 = 2 . 1 g h z f 2 = 2 . 1 0 1 g h z b i a s : v ds = 8 v , i d s = 18 0m a s our c e ma t c hi ng : m a g 0 . 75 ang - 1 6 9 . 5 l o a d m a t c hi ng: ma g 0 . 3 2 a n g 144 . 6 [note] p ou t a nd k ad d are m easured by one si gnal . the dat a for the figures above were m easured with th e l o a d im peda nce m a tched to ip3 . i d = 220m a pi n (d b m ) po u t (d b m ) ga i n (d b ) im 3 (d b m ) im 3 / po u t (d b c ) ip 3 (d b m ) id (m a ) ad d (% ) - 10. 0 4 . 4 14. 4 - 68. 1 - 72. 5 40. 6 178. 4 0 . 2 - 5 . 0 9. 5 14. 5 - 57. 4 - 66. 8 42. 9 173. 4 0 . 6 0. 0 14. 5 14. 5 - 41. 8 - 56. 3 42. 7 165. 8 2 . 0 5. 0 19. 5 14. 5 - 25. 5 - 45. 0 41. 8 162. 8 6 . 6 10. 0 24. 5 14. 5 - 2. 4 - 26. 8 37. 4 170. 3 19. 8 15. 0 29. 3 14. 3 13. 8 - 15. 5 34. 6 202. 3 50. 6 i d = 180m a pi n (d b m ) po u t (d b m ) ga i n (d b ) im 3 (d b m ) im 3 / po u t (d b c ) ip 3 (d b m ) id (m a ) ad d (% ) - 10. 0 4 . 4 14. 4 - 66. 3 - 70. 7 39. 9 164. 9 0 . 2 - 5 . 0 9. 5 14. 5 - 56. 0 - 65. 5 42. 3 159. 6 0 . 7 0. 0 14. 6 14. 6 - 41. 4 - 56. 0 42. 6 151. 8 2 . 3 5. 0 19. 6 14. 6 - 23. 7 - 43. 3 41. 3 147. 5 7 . 5 10. 0 24. 6 14. 6 0 . 8 - 23. 8 36. 0 156. 1 22. 2 15. 0 29. 3 14. 3 13. 6 - 15. 7 34. 6 189. 3 53. 6 specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp -4- w e b site : www .sei. c o. jp /gaasic/
specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp w e b site : www .sei. c o. jp /gaasic/ -5- t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric tc = 2 5 c , v d s = 8 v , i d s = 22 0m a , p i n = 0 d b m [p o u t - l s t a te ] f = 2. 1g h z + po u t : 0. 55 13 0 . 6 s o ur c e : 0. 75 -1 6 9 .5 p o u t m a x : 14 . 9 d b m [i p 3 -l s t a t e ] f1 = 2 . 1 g h z f2 = 2 . 1 0 1 g h z + ip 3 : 0. 36 17 5 . 9 s o u r c e : 0. 75 -1 6 9 . 5 i p 3 m a x : 41 . 5 d b m t c = 2 5 c , v d s= 8 v , i d s= 1 8 0 m a , p i n = 0 d b m [p o u t - l s t a te ] f = 2. 1g h z + po u t : 0. 55 13 3 . 1 s o ur c e : 0. 75 -1 6 9 . 5 p o u t m a x : 15 . 0 d b m [i p 3 -l s t a t e ] f1 = 2 . 1 g h z f2 = 2 . 1 0 1 g h z + ip 3 : 0. 32 14 4 . 6 s o u r c e : 0. 75 -1 6 9 . 5 i p 3 m a x : 41 . 0 d b m +j 2 5 +j 5 0 +j 1 0 0 10 0 50 25 -j 2 5 -j 5 0 -j 1 0 0 13 . 6 5 14 . 9 +j 1 0 0 10 0 +j 5 0 +j 2 5 25 50 -j 2 5 -j 5 0 -j 1 0 0 13 . 7 5 15 . 0 +j 2 5 +j 5 0 +j 1 0 0 10 0 50 25 -j 2 5 -j 5 0 -j 1 0 0 41 . 0 38 . 5 10 0 -j 1 0 0 -j 5 0 -j 2 5 +j 2 5 +j 5 0 +j 1 0 0 41 . 5 40 . 2 5 25 50
specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp w e b site : www .sei. c o. jp /gaasic/ -6- t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric i nf characteristics i d s = 2 2 0 m a i d s = 1 8 0 m a ids=160ma 0 1. 0 1. 0 -1 . 0 10 . 0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4. 0 4 . 0 - 4 . 0 0. 2 0 . 2 - 0 . 2 0. 4 0 . 4 - 0 . 4 0. 6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 1. 28 1. 78 0 1. 0 1. 0 -1 . 0 10 . 0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4. 0 4 . 0 - 4 . 0 0. 2 0 . 2 - 0 . 2 0. 4 0 . 4 - 0 . 4 0. 6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 1. 28 1. 78 0 1. 0 1. 0 -1 . 0 10 . 0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4. 0 4 . 0 - 4 . 0 0. 2 0 . 2 - 0 . 2 0. 4 0 . 4 - 0 . 4 0. 6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 1. 2 1 1. 71 0 1. 0 1. 0 -1 . 0 10 . 0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4. 0 4 . 0 - 4 . 0 0. 2 0 . 2 - 0 . 2 0. 4 0 . 4 - 0 . 4 0. 6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 1. 2 1 1. 71 2 2 0 1. 0 1. 0 -1 . 0 10 . 0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4. 0 4 . 0 - 4 . 0 0. 2 0 . - 0 . 2 0. 4 0 . 4 - 0 . 4 0. 6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 1. 39 1. 89 0 1. 0 1. 0 -1 . 0 10 . 0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2. 0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4. 0 4 . 0 - 4 . 0 0. 2 0 . - 0 . 2 0. 4 0 . 4 - 0 . 4 0. 6 0 . 6 - 0 . 6 0. 8 0 . 8 - 0 . 8 1. 39 1. 89 [note] the da ta for sm ith chart s were m easure d at frequency of 2ghz and t c of 25c. (g (g v d s = 8v ids = 220m a v ds = 8 v i ds = 160m a m a g a ng (de g ) m a g a n g ( de g ) 0.4 0 .25 0 .51 - 84.5 0 .09 23.1 0 .4 0.16 0.51 -90.0 0 .07 22.6 0.6 0 .39 0 .40 - 48.2 0 .13 20.6 0 .6 0.27 0.40 -53.1 0 .10 20.3 0.8 0 .59 0 .29 - 8.0 0 .17 18.9 0 .8 0.50 0.24 -27.6 0 .14 18.2 1.0 0 .66 0 .34 43.3 0 .17 18.0 1 .0 0.61 0.28 31.5 0 .15 17.4 1.2 0 .81 0 .34 85.4 0 .15 16.9 1 .2 0.74 0.30 77.1 0 .13 16.5 1.4 0 .85 0 .40 117.8 0 .11 16.1 1 .4 0.74 0.37 112.5 0 .10 15.7 1.6 1 .00 0 .45 150.1 0 .07 15.4 1 .6 0.87 0.40 145.4 0 .07 15.0 1.8 1 .05 0 .48 178.7 0 .05 14.7 1 .8 0.95 0.42 173.8 0 .05 14.3 2.0 1 .39 0 .46 - 148.3 0 .10 14.1 2 .0 1.21 0.43 -150.8 0 .08 13.8 v d s = 8v ids = 180m a ma g a n g ( d e g ) 0.4 0 .18 0 .50 - 90.0 0 .08 22.6 0.6 0 .35 0 .38 - 55.1 0 .11 20.2 0.8 0 .51 0 .29 - 15.1 0 .16 18.6 1.0 0 .62 0 .30 36.7 0 .15 17.6 1.2 0 .75 0 .29 78.8 0 .14 16.6 1.4 0 .77 0 .38 114.6 0 .10 15.8 1.6 0 .89 0 .42 146.8 0 .07 15.1 1.8 0 .98 0 .43 175.5 0 .05 14.4 2.0 1 .28 0 .45 - 150.9 0 .08 13.9 a s s o ci at e d ga i n ( d b ) fr e q . (g h z ) nf m i n (db) op t rn/ 5 0 a s s o ci at e d ga i n ( d b ) fr e q . h z ) nf m i n (db) op t rn/ 5 0 a s s o ci at e d ga i n ( d b ) fr e q . h z ) nf m i n (db) op t rn/ 5 0 0 0 .5 1 . 0 1 .5 2 . 0 2 .5 f r e q u e nc y ( g h z ) 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 1. 8 2. 0 nf ( d b ) i d s = 220m a i d s = 180m a i d s = 160m a
specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp w e b site : www .sei. c o. jp /gaasic/ -7- t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric i application cir c uit : 21 10-2170mhz c7 r1 c2 c5 l1 c6 c3 c4 l2 c1 c8 c7 r1 c2 c5 l1 c6 c3 c4 l2 c1 c8 rf i n (rs = 5 0 ? ) vg vd d.u.t r f o u t ( r l= 5 0 ? ) z1 z2 z3 z4 z5 z 6 z7 c9 c1 0 rf i n k p 02 8j rf o u t vg (-0 . 7 ~-2 v ) vd (+ 8 v ) l2 l1 c5 c4 r1 c6 c7 c8 c9 c1 c2 c3 c1 0 rf i n k p 02 8j rf o u t vg (-0 . 7 ~-2 v ) vd (+ 8 v ) l2 l1 c5 c4 r1 c6 c7 c8 c9 c1 c2 c3 c1 0 r e f . de s . v a l u e p a r t nu m b e r r1 82 ? su su m u r r 08 16 s e r i e s c1 2 p f c2 0 . 5 p f c3 0 . 5 p f c4 1 p f c5 2 p f c6 1 f c7 1 f c8 4 p f c9 0 . 5 p f c1 0 0 . 5 p f l 1 22 nh l 2 22 nh mu ra t a gr m 1 8 s e r i e s t o k o ll1 6 0 8 se r i e s re f. de si g n a t o r e l e c t r ic a l le n g t h @ 2 . 1 g hz ( d e g ) z1 3 . 8 6 z2 2 7 . 9 z3 4 . 0 8 z4 1 3 . 6 1 z5 8 . 6 2 z6 6 . 3 8 z7 4 5 . 3 7 a l l m i c r os t r i p l i ne s ha ve a l i ne i m p e da nc e of 50 : . 1. 9 2. 0 2. 1 2. 2 2. 3 f r e q ue n c y ( g h z ) -3 0 -2 0 -1 0 0 10 20 s1 2 s1 1 s2 2 s2 1 s - p a ra m e t e rs (db ) 1. 9 2. 0 2. 1 2. 2 2. 3 f r e q ue n c y ( g h z ) -3 0 -2 0 -1 0 0 10 20 s1 2 s1 1 s2 2 s2 1 1. 9 2. 0 2. 1 2. 2 2. 3 f r e q ue n c y ( g h z ) -3 0 -2 0 -1 0 0 10 20 s1 2 s1 1 s2 2 s2 1 s - p a ra m e t e rs (db )
specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp w e b site : www .sei. c o. jp /gaasic/ -8- t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric [t ypical performance] KP028J app lic ati on circ uit vds=8v , ids= 2 20m a, t c =25 c fre que ncy c h ara c t e ri st i c s were m easure d wi t h p o u t at 17 db m . 10 15 20 25 30 35 40 45 50 -4 -2 0 2 4 6 po u t (d b m ) ga i n ( d b ) ip 3 ( d b m ) pi n ( d b m ) 18 0 18 5 19 0 19 5 20 0 20 5 21 0 21 5 22 0 8 id s ( m a ) po u t , g a i n , i p 3 , i d s v s p i n ip 3 id s po u t ga i n 18 0 18 5 19 0 19 5 20 0 20 5 21 0 21 5 22 0 8 id s ( m a ) po u t , g a i n , i p 3 , i d s v s p i n ip 3 id s po u t ga i n po u t , g a i n , i p 3 , i d s v s p i n ip 3 id s po u t ga i n 10 12 14 16 18 20 22 -7 0 -6 5 -6 0 -5 5 -5 0 -4 5 -4 0 im 3 ( d b c ) im 5 ( d b c ) -7 0 -6 5 -6 0 -5 5 -5 0 -4 5 -4 0 im 3 ( d b c ) im 5 ( d b c ) po u t (d b m ) im 3 , im 5 v s p o u t im 3 im 5 im 3 , im 5 v s p o u t im 3 im 5 42 . 0 42 . 5 43 . 0 43 . 5 44 . 0 44 . 5 21 0 0 21 2 0 21 4 0 21 6 0 21 8 0 ip 3 ( d b m ) f r e q ue nc y ( m h z ) i p 3 v s f re q u e n cy vd s = 8 v vd s = 7 v vd s = 6 v i p 3 v s f re q u e n cy vd s = 8 v vd s = 7 v vd s = 6 v 38 39 40 41 42 43 44 45 21 0 0 21 2 0 21 4 0 21 6 0 21 8 0 ip 3 ( d bm ) f r e q ue nc y ( m h z ) i p 3 v s f re q u e n cy id s = 2 2 0 m a id s = 1 9 0 m a id s = 1 6 0 m a i p 3 v s f re q u e n cy id s = 2 2 0 m a id s = 1 9 0 m a id s = 1 6 0 m a 14 . 0 14 . 1 14 . 2 14 . 3 14 . 4 14 . 5 21 0 0 21 2 0 21 4 0 21 6 0 21 8 0 ga i n (d b ) f r e q ue nc y ( m h z ) ga i n v s f r e q u e n c y vd s = 8 v vd s = 7 v vd s = 6 v ga i n v s f r e q u e n c y vd s = 8 v vd s = 7 v vd s = 6 v 14 . 0 14 . 1 14 . 2 14 . 3 14 . 4 14 . 5 21 0 0 21 2 0 21 4 0 21 6 0 21 8 0 ga i n (d b ) f r e q ue nc y ( m h z ) ga i n v s f r e q u e n c y id s = 1 6 0 m a i d s = 1 90m a id s = 2 2 0 m a ga i n v s f r e q u e n c y id s = 1 6 0 m a i d s = 1 90m a id s = 2 2 0 m a
specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp w e b site : www .sei. c o. jp /gaasic/ -9- t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric i caution: pow e r supply sequence p 01100 08p p 01200 08p a p p l icat io n ci r c u i t r4 q1 a gn d r2 vg s +8 v vd s r1 -5 v r3 r5 q1 b gn d for safe opera t i on , el ectri c p o w er shoul d b e supp lie d i n foll owin g seq u e nc e. first, t h e neg a ti ve vo lta ge sh ou ld be applie d on t h e gate, and the volt age should be m o re negat i ve tha n th e pi nc h-of f v o l t a g e wh en y o u t u rn o n the power supp ly . t h e n , dr ain b i as can b e app lie d. fin a lly , y ou ca n t u rn on th e rf si gn a l . when tur n ing of f the power s u pply , t h e s e que n ce s h oul d be (1)rf signal (2)d rain (3)gate. ga t e vo l t a g e 0v bi a s v o l t a g e dr ai n vo l t a g e on on 0v mo r e t h a n 1 m s of f bi a s v o l t a g e mo r e t h a n 1 m s of f ga t e vo l t a g e 0v bi a s v o l t a g e dr ai n vo l t a g e on on 0v mo r e t h a n 1 m s of f bi a s v o l t a g e mo r e t h a n 1 m s of f vd s + 7 . 9 v ids 220m a q1 um t 1 n ( r o h m ) r1 16 ? 1/ 10w r2 2.7k ? 1/ 10w r3 0.22 ? rl s e ri e s (s u s u m u ) r4 1k ? 1/ 10w r5 1.3k ? 1/ 10w i bias cir c uit [passive bi asin g] if y ou use a fi xe d bi as circ ui t, y ou som e ti m e s need to c o n t rol the g a te b i as to get t h e s a m e ids, si nce t h e de vic e s h a ve som e m a r g in of p i nc h - of f vol tag e (vp ) variat io n d e pe ndi ng on th e wafer lots. if y ou em ploy a fixe d vgs b i a s ing f o r y our sy stem , y ou sho u ld cl osely m onitor t h e d r ain c u rren t , p a rt icul arl y wh en new wafer l o ts are in t r od uced. if y ou used id s other t h a n 2 2 0 m a , y ou can calc u la te t h e resistance values as follows: r4 se t t o be 1k : [active b i asin g] i 1 : ic of q1a i 2 :ic of q1b w e rec o mm en d using an ac t i ve bias circ uit , whi c h ca n elim inate t h e i n fluence of vp varia t i on. an e x am ple of an acti v e b i as c i rc uit ca lle d ? c urr e nt m i rror ? is shown be low . here, two pnp transis t ors hav i ng th e m i ni m u m variati o n of ibe charact erist i c s are use d . thes e trans i stors adjus t vgs by cha n g i n g vds aut o m a tically . i t will re ali ze t h e c ons tan t current c h arac te ristics, regar d les s of t h e tem p erature. v be1 : vbe of q1a v be2 : vbe of q1b r1=(+ 8 v - vds+v be2 -v be 1 )/i 1 =(+ 8 v - vds)/i 1 r2=(vds-v be 2 )/i 1 r3=(+8v - vds)/(ids+i 2 ) r5= | -5v - vgs | /i 2 the c i rcu it s h o u ld be co n n ec te d d i rect ly in li n e with where the v o lt ag e su p p li es wo uld b e norm a lly con n e c te d wit h the app lic at io n circ uit . of c ourse a m a tchi ng c i rcu it is re qu ired , but it is no t sh o w n in th is fi gure . i attention to heat radiation in t h e l a y out d e sig n of the pri n te d circ ui t bo a r d (pcb) on which t h e power fet s are att ached, t h e heat radiat ion t o m i ni m i ze t h e d e vi ce j unc ti on t e m p erature sh o u ld be ta ke n int o a cco un t, s i nce it si gn ific antly af fects th e mttf and rf perform ance. i n any e n vironm ent, the j u ncti on tem p erature shou ld be l o we r than th e abs o l u te m a xi m u m rati ng duri n g the d e v i ce oper a ti on a n d i t is recom m e nded t h at th e th erm a l desi gn has en ou gh m a r g in. [note] in the m easurem ents of rf perform ance (pout vs pi n, e t c) usin g th e a p p l i c ati o n circ ui t des c ribe d before , t h e act iv e bias ci rcui t herein was no t ut il i z ed . th e app l i c at io n ci rcu i t s were biase d dire ctly f r o m two power supp li es.
specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp w e b site : www .sei. c o. jp /gaasic/ -10- t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric the junc tion te m p erature can be calcul a ted by t h e fo ll o w in g for m ula. [using heat sink] if y ou cann o t get t h e ju nct i o n te m p erature lo wer than the abso lu te m a xim u m ratin g on ly with t h e pl at ed thru h o l e s, the n y ou nee d to em ploy the hea t sin k . att a c h in g t h e h e a t sink d i rec tly un der pi n 4 of t h e de vi ce im proves t h e th erm a l resista n ce be twe e n j u nct i o n a n d am bient . t jm ax =(vds*ids-p ou t )(r th +r bo ard +r hs )+t a p ou t : ou tp ut p o w er r th : t h erm a l resista n ce be twee n cha n nel and c a s e r bo ard : therm a l resista n ce of pc b r hs : t h erm a l resista n ce of hea t s i nk t a : am bient te m p erature t jm ax : ma xim u m junct i o n t e m p erat ure general l y , there are two ways of heat radiat ion. one is t h e pla t ed thru ho le and the ot her is the hea t sin k . key poi nts will be il lus t rate d i n eac h case b e low . no te t h a t no m easure aga i nst osci lla ti on is a d o p te d i n the fi gures . in t h e des i g n of circu it an d l a y o u t, y o u sh ou ld t a ke s t a b il izi n g i n to ac co un t if necessary . [using thru hole] ? mu lti pl e pl ate d thr u ho les are require d d i rect l y below th e dev i ce . ? place m o re than 2 m achine s c rews as c l ose t o t h e ground pin (pi n 4) as poss i b l e. th e pcb is scre wed o n th e m ounti ng pla t e or the hea t si nk t o l o wer th e therm a l resistance of the pcb. ? lay out a lar g e gr ound pa d area wi th m u lti pl e plat ed t h ru hol es aro u nd pi n 4 of t h e de vi c e . ? the req u ire d m a tchin g an d f eed bac k circ uit des c rib e d in the appli cat ion circuit e x am pl es shou ld be c o nne cte d t o the de vi ce, al th o u g h i t is no t sh o w n in th e fi gure bel o w . he 1.9 (4-r0.3) 0.4 p l a t e d t h ru h o l e s 3 p l a t e d t h ru h o l e for 2.5 m a c h i n e s c re w s p a ck a g e o u t l i n e 4-r0.3 a t s i n k 2 2.95 0.6 2.85 5 s o l d e r m a s k k e e p out 3 p l a t e d t h ru h o l e for 2.5 m a c h i n e s c re w s 5 s o l d e r m a s k k e e p out g r a nd p l a n e g r a nd p l a n e [note] ? ground/t h erm a l vias are cr i tica l for the proper devic e perform ance. d r ills of t h e re co mm ended diam eters sh ou ld be used i n t h e fa brica t i on of v i as . ? add as m u ch copper a s possi ble to i nner and outer l a yers near the part t o ensure optim al t h erm a l perform anc e . ? mo un tin g scr e ws ca n be a d d e d ne ar t h e p a rt to fast en t h e boar d t o he at si nk. e n sure th at the gro u n d /t her m al via reg i o n contac ts t h e he a t sink. 0.4 p l a t e d t h ru h o l e s 0.3 p l a t e d t h ru h o l e s 3 p l a t e d t h ru h o l e for 2.5 m a c h i n e s c re w s 5 s o l d e r m a s k k e e p out p a ck a g e o u t l in e k e e p out 3 p l a t e d t h ru h o l e for 2.5 m a c h i n e s c re w s g r a nd p l a n e 5 s o ld e r ma s k 0.4 p l a t e d t h ru h o l e s 0.3 p l a t e d t h ru h o l e s 3 p l a t e d t h ru h o l e for 2.5 m a c h i n e s c re w s 5 s o l d e r m a s k k e e p out p a ck a g e o u t l in e k e e p out 3 p l a t e d t h ru h o l e for 2.5 m a c h i n e s c re w s g r a nd p l a n e 5 s o ld e r ma s k ? do not pu t s o lder m a sk on t h e bac k si de of th e pcb i n th e region where t h e board cont acts the heat sink. ? rf trace wi dth de pe nds upon the pcb m a terial and cons truc ti on. ? use 1 oz. co p p er m i ni m u m .
specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp w e b site : www .sei. c o. jp /gaasic/ -1 1- t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric [note] ? package draw ing the r e fl ow pr ofile is dif f er e n t fr om the o n e for sn-pb pla ting . 1 2 3 1. 5 0. 08 1. 5 0 . 08 4. 5 0. 1 1. 6 + 0. 15 1. 6 0. 3 2. 5 0. 1 4. 0 0. 2 5 1. 1 0. 3 0 . 42 0 . 06 0 . 47 0 . 06 0. 42 0. 06 1. 5 0. 1 0. 4 + 0. 03 - 0 . 02 0. 1 0. 05 -0 . 2 1 2 3 1. 5 0. 08 1. 5 0 . 08 4. 5 0. 1 1. 6 + 0. 15 1. 6 0. 3 2. 5 0. 1 4. 0 0. 2 5 1. 1 0. 3 0 . 42 0 . 06 0 . 47 0 . 06 0. 42 0. 06 1. 5 0. 1 0. 4 + 0. 03 - 0 . 02 0. 1 0. 05 -0 . 2 if y ou us e a s o ld erin g iron t o a tta ch t h e devi ces, pl ease beware of t h e fo llowi ngs. (1 ) the t i p o f th e i r on sh ou ld b e g r ou nd ed . or yo u sh ou ld use a n iron th at i s ele c trost a t i c di schar g e proof. (2 ) th e te m p e r a t u r e o f th e i r on ti p sho u l d be l o we r th a n 24 0 c a nd th e so lder in g sh o u ld b e c o m p leted wi th in 1 0 seconds. ? attention to esd general l y , gaa s devices are very sensit ive to ele c trost a t i c disc har g e (esd). t o re duc e the esd dam a ge, pleas e pay atte nt io n to th e foll owin gs. t h e de vic e s sh o u ld b e st ored with t h e ele c tro d es sh ort-circ ui t e d by c o n d u c ti ve m a terials. the workst ati o n an d to ols sh oul d be grou n d ed for safe dissi pat i on of t h e st ati c c h ar ges in the envir onm ent. the workpe op le are to we ar an ti-st atic cl ot hi ng an d wrist stra ps. for safety reasons, resistance of 10m ? or so should exis t betwe e n wor k p e op le an d gr ou n d . ? laser mark ing 1 . 3+0. 1 -0 p * 3 1 1. 6 5 m a x b a (0 . 6 5 ) * 2 a: 0 . 6 7 + 0 - 0 .1 b: 0 . 4 5 1 , 2, 3: l o t n o . * * p : p r od uc t t y pe 1 . 3+0. 1 -0 p * 3 1 1. 6 5 m a x b a (0 . 6 5 ) * 2 a: 0 . 6 7 + 0 - 0 .1 b: 0 . 4 5 1 , 2, 3: l o t n o . * * p : p r od uc t t y pe ? attention to moistur e the m o isture sensi tiv ity le ve l (msl) of p0120 00 8p is 3, which m eans t h at t h e ? f loor li fe? is 168 hour s be low 30 c with re lat i v e h u m idity (rh) of 6 0 %. the de vic e s are us ual l y s h ip pe d in m o isture-resis t a n t alum ina-lam i nated pac k ages. af ter brea ki ng the p a c k ag es, they are t o b e st ored un der nor m a l tem p eratur e an d hum idity (5-35c , 45- 75 %), with n o co rrosive g a ses o r dust i n th e environ m ent. a sse m b le the de vic e s wit h i n 168 hours after break in g the p a cka g e, or y o u h a ve to b a ke t h e m at 85 c for 24 ho urs b e fore assem b lin g. ? reliability and envir o nmental i ssue s ? convectio n reflow pr ofile (recommended) the d e ta ile d rel i a bi lity i n form ati on ca n b e seen i n rel i a b il it y and qual it y as surance , whic h y ou can down l oad from our web site. 60 120 180 240 0 100 200 300 t e mp er a t u r e ( c) 0 ti m e ( s e c ) p r e h e a t : 160 c 90 s e c < 45 s e c 260 5 c 5s e c m a x t i m e a bove 230 c 60 120 180 240 0 100 200 300 t e mp er a t u r e ( c) 0 ti m e ( s e c ) p r e h e a t : 160 c 90 s e c < 45 s e c 260 5 c 5s e c m a x t i m e a bove 230 c 60 120 180 240 0 100 200 300 t e mp er a t u r e ( c) 0 ti m e ( s e c ) p r e h e a t : 160 c 90 s e c < 45 s e c 260 5 c 5s e c m a x t i m e a bove 230 c sei? s y okoham a w o r k s, wher e the de vi ces are m a nufac t u r e d , has been accre d it ed iso-14001 since 1999. w e control the tox i c m a terials in o u r pr od ucts in a c c o rda n ce with pr tr regul at io n. ? lead and fluoride t o realize pb-free products, sn- b i is used for the lead fra m e pla t i ng. any fluor ide t h at h a s bee n de term ine d by th e mon t rea l a g ree m ent is n o t use d in th e pr od ucts .
t echnical note p0120008p 1w gaas pow e r fet (pb-fr e e t y pe) sumit o mo electric (3 ) in case you ab and on th e p r o d u c t s , you sh ou l d o b ey th e relat e d laws a n d regu lat i o n s. ? gaas fet chips are used i n p0 12 00 08p . for sa fety reaso n s, y ou sh ou ld at te nd to th e fo llow i ng m a tters: ? (1) do n o t pu t t h e prod uc ts i n y our m ouse. sei welcom es technic a l questi ons fro m any custom ers. the e-m a il is gaasic-ml@ml. s ei. c o. jp . y ou ca n a l so co nt act o u r regio n a l of f i ces as be low . (2) do not m a ke t h e pro d u c ts i n t o gases or powd e rs, by burn i n g , brea ki ng or c h em ical t r eatm e nts. ? specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp w e b site : www .sei. c o. jp /gaasic/ [eur ope] sum ito m o electric europe ltd. 220 centennial park, centenni al a v enue, elstree, hert s. wd6 3sl u.k. t e l : +44-(0)20 - 8953- 336 9, fa x : +44-(0) 20-8 207-5 950 url : http://www .su m i e lectri c.co m url: http://www .sei.co.jp/gaasic / [u.s.a.] sum ito m o electric u.s.a., inc. 3235 kifer road, suite 15 0 santa clara, ca 9505 1-08 15 usa t e l : +1-408-7 37-85 17 fax : +1-408- 7 34-88 81 [asia/pac i fic ] sum ito m o electric industries, ltd. photo-electron device divisi on, electron d e vices d e part ment 1, t a y a -cho, sa kae-ku, y oko h a m a , kanagawa, 244-8 588 j a pan t e l : +81 - ( 0 ) 45 - 853 - 7 263 , fax : +81 - ( 0 ) 45 - 85 3 - 129 1 e-mail : gaasic-m l@m l .s ei.co.jp -12-
t echnical note p0120008p 1w gaas po wer fet ( pb-fr e e t yp e) sumit o mo electric ? the i n form ati o n i n this doc um ent is subj ect t o change wi thout noti ce. ple a s e refer for t h e m o st up-t o -da t e inf o rm ation bef o re y ou st art de sign usi n g sei? s devi ces. ? a n y part of this do cum e nt m a y not b e re prod uce d or c opi ed. ? sei do es n o t ass u m e any lia bi lity for i n fring em ent o f pat e nts , c o p y r ights or ot h e r in tel l ec tu al prop erty rights of t h ir d parti e s by or a r ising fro m th e use of sei? s prod ucts des c ribe d i n t h is do cum e nts. n o l i ce nse, express, im plied or o t herw is e, is gra n te d u nder any pat e nts, co py righ t s or o t her in te llec t u a l pro p er ty righ ts of sei or o t he rs. ? descrip tio n s of circ uits a n d o t her rel a te d inform ation in th is do cum e nt are for il lu strati ve p u rpo s e i n th e exam ples of t h e d e vi ce ope ratio n a nd a p pli cat io n. sei does no t assu m e any responsib ili ty for any losse s inc u rred by custom ers or third par ties aris ing from the use of t h e circ uits an d ot her relate d i n for m ation i n this do cum e nt. ? sei? s sem i -con duc tor d e vi ce pr od uct s are desi gn ed a nd m a nufact ured f o r use i n t h e stan dard com m unicati o n e qui pm ent. cust o m ers tha t w i sh to use t h ese pro duc ts in a p p l i cat io n s no t i n te nd ed by sei m u st contac t sei? sales repr esent a t i ves in advanc e. ? genera lly , it is im possibl e to elim inate c o m p lete ly th e defec t s i n sem i -con du ct or pr od ucts, whi l e sei has bee n c o n tin u a lly im provin g t h e qua li ty an d rel i ab ili ty of th e pr od ucts. sei does no t ass u m e any respons ib ili ty for any l o sses inc u rred by cust om ers or third p a rties b y or arisin g f r o m the use o f sei? s sem i -cond uct o r pro duc ts. cust o m ers are to in corp ora t e su f f i c ie nt s a fety m easures in t h e desi gn suc h as redu nda ncy , fi re-cont ai nm en t an d ant i -fail ure fea t ures. specifications and inform ation are subject to change withou t notice. 2003-1 1 sumitomo electr i c industr ies, ltd . 1, t a y a -cho , s a kae-ku , y okohama, 244-8588 japan phone: +81-45-8 53-7263 fax: +81-45-853-129 1 e-mail : gaasic-ml@ ml. s ei. c o. jp w e b site : www .sei. c o. jp /gaasic/ -13-

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