preliminary data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. document no. p14441ej1v0ds00 (1st edition) date published july 1999 ns cp(k) printed in japan for optical daa, current limit type 16-pin ssop ocmos fet ocmos fet tm PS7841C-A11,ps7841c-a15 ? 1999 description the PS7841C-A11 and ps7841c-a15 are solid state relays for optical daa (data access arrangement). they have an ocmos fet with current control circuit, photocoupler, diode bridge and darlington transistor. current control circuit of ocmos fet protects output circuit and this device from thermal breakdown. this device is suitable for analog signal control applications such as laptop pcs, modem cards, voice telephony and fax machines. features ? for optical daa circuit ? ocmos fet ? photocoupler dc input response : PS7841C-A11 ac input response : ps7841c-a15 ? diode bridge ? darlington transistor ? limit current (i lmt = 180 ma typ.) ? low led operating current (i f = 2 ma) ? small and thin package (16-pin ssop: 255 mil, pin pitch = 1.27 mm, height = 2.1 mm) ? ordering number of taping product: PS7841C-A11-f3, f4, ps7841c-a15-f3, f4 applications ? laptop pc, pda ? modem card ? telephone, fax
preliminary data sheet p14441ej1v0ds00 2 PS7841C-A11,ps7841c-a15 package dimensions (in millimeters) ps7841c-a15 top view 16 14 15 12 13 10 11 9 13 25 478 6 PS7841C-A11 top view 16 14 15 12 13 10 11 9 13 25 478 6 0.15 +0.10 C0.05 0.50.3 4.4 7.00.3 0.40 +0.10 C0.05 0.12 m 1.27 10.30.3 0.05 +0.08 C0.05 2.05 +0.08 C0.05 0.15 +0.10 C0.05 0.50.3 4.4 7.00.3 0.40 +0.10 C0.05 0.12 m 1.27 10.30.3 0.05 +0.08 C0.05 2.05 +0.08 C0.05 9. led anode 10. led cathode 11. di. input 12. di. output 13. tr. emitter (darlington) 14. tr. base (darlington) 15. mos fet 16. mos fet 1. nc 2. led anode 3. led cathode 4. nc 5. nc 6. nc 7. tr. collector 8. tr. emitter 9. led anode, cathode 10. led cathode, anode 11. di. input 12. di. output 13. tr. emitter (darlington) 14. tr. base (darlington) 15. mos fet 16. mos fet 1. nc 2. led anode 3. led cathode 4. nc 5. nc 6. nc 7. tr. collector 8. tr. emitter
preliminary data sheet p14441ej1v0ds00 3 PS7841C-A11,ps7841c-a15 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit ocmos fet diode forward current (dc) i f 50 ma (pin no. 2, 3, 15, 16) reverse voltage v r 5.0 v power dissipation p d 50 mw peak forward current *1 i fp 1a mos fet break down voltage v l 400 v continuous load current i l 120 ma pulse load current *2 (ac/dc connection) i lp 250 ma power dissipation p d 430 mw photocoupler diode forward current i f 50 ma (pin no. 7, 8, 9, 10) reverse voltage *3 v r 5.0 v power dissipation p d 50 mw peak forward current *1 i fp 1a transistor collector to emitter voltage v ceo 40 v collector current i c 80 ma power dissipation p c 50 mw diode bridge forward current i f 140 ma (pin no. 10, 11, 12, 15) reverse voltage v r 100 v darlington transistor collector to emitter voltage v ceo 40 v (pin no. 12, 13, 14) collector current i c 120 ma power dissipation p c 500 mw isolation voltage *4 bv 1 500 vr.m.s. total power dissipation p t 650 mw operating ambient temperature t a - 40 to +80 c storage temperature t stg - 40 to +100 c *1 pw = 100 m s, duty cycle = 1 % *2 pw = 100 ms, 1 shot *3 PS7841C-A11 only *4 ac voltage for 1 minute at t a = 25 c, rh = 60 % between input and output recommended operating conditions (t a = 25 c) parameter symbol min. typ. max. unit ocmos fet led operating current i f 21020ma led off voltage v f 00.5v
preliminary data sheet p14441ej1v0ds00 4 PS7841C-A11,ps7841c-a15 electrical characteristics (t a = 25 c) ocmos fet (pin no. 2, 3, 15, 16) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.2 1.4 v mos fet off-state leakage current i off v d = 400 v 1.0 m a coupled led on-state current i fon i l = 120 ma 2.0 ma on-state resistance r on1 i f = 10 ma, i l = 10 ma 26 35 w r on2 i f = 10 ma, i l = 120 ma 22 30 turn-on time t on i f = 10 ma, v o = 5 v, pw 3 10 ms 0.3 1.0 ms turn-off time t off 0.04 0.2 isolation resistance r i-o v i-o = 500 v dc 10 9 w isolation capacitance c i-o v = 0 v, f = 1 mhz 1.1 pf limit current i lmt i f = 10 ma, t = 5 ms, v l = 6 v 155 180 210 ma photocoupler (pin no. 7, 8, 9, 10) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.2 1.4 v transistor collector to emitter dark current i ceo v ce = 40 v, i f = 0 ma 0.1 m a coupler current transfer ratio (i c /i f )ctri f = 5 ma, v ce = 5 v 50 200 400 % collector saturation voltage v ce (sat) i f = 10 ma, i c = 2 ma 0.1 0.3 v rise time t r v cc = 5 v, i c = 2 ma, r l = 100 w 3.0 m s fall time t f 5.0 isolation resistance r i-o v i-o = 500 v dc 10 11 w isolation capacitance c i-o v = 0 v, f = 1 mhz 0.4 pf diode bridge (pin no. 10, 11, 12, 15) parameter symbol conditions min. typ. max. unit forward voltage v f i f = 120 ma 0.9 1.2 v reverse current i r v r = 100 v 10 m a darlington transistor (pin no. 12, 13, 14) parameter symbol conditions min. typ. max. unit collector saturation voltage v ce (sat) i c = 120 ma, i b = 100 m a1.01.4v collector to emitter dark current i cex i b = 0 ma, v ce = 30 v 0.01 1.0 m a dc current gain h fe i c = 120 ma, v ce = 10 v 10 000 35 000
preliminary data sheet p14441ej1v0ds00 5 PS7841C-A11,ps7841c-a15 [memo]
preliminary data sheet p14441ej1v0ds00 6 PS7841C-A11,ps7841c-a15 [memo]
preliminary data sheet p14441ej1v0ds00 7 PS7841C-A11,ps7841c-a15 [memo]
PS7841C-A11,ps7841c-a15 caution within this device there exists gaas (gallium arsenide) material which is a harmful substance if ingested. please do not under any circumstances break the hermetic seal. ocmos fet is a trademark of nec corporation. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8
|
