on-state current 0.8 amp fs01...a/b this series of s ilicon c ontrolled r ectifiers uses a high performance pnpn technology. this part is intended for general purpose applications where high gate sensitivity is required. jul - 02 absolute maximum ratings, according to iec publication no. 134 on-state current average on-state current non-repetitive on-state current non-repetitive on-state current fusing current peak reverse gate voltage peak gate current peak gate dissipation gate dissipation operating temperature storage temperature soldering temperature i t(rms) parameter conditions min. max. unit gate trigger current < 200 ? off-state voltage 200 v ?600 v symbol i t(av) i tsm i tsm i 2 t v grm i gm p gm p g(av) t j t stg t sld all conduction angle, t l = 55 ? half cycle, q = 180 ? t l = 55 ? half cycle, 60 hz, t j = 25 ? half cycle, 50 hz, t j = 25?c t p = 10ms, half cycle i gr = 10 ? 20 ? max. 20 ? max. 20ms max. 1.6 mm from case, 10s max. 0.8 0.5 8 7 0.24 8 -40 -40 a a a a a 2 s v a w w ? ? ? 1 2 0.1 +125 +150 260 repetitive peak off state voltage parameter conditions voltage unit symbol v drm v rrm r gk = 1 k w v b 200 d 400 g g k to92 (plastic) rd26 (plastic) fs01...a fs01...b a k a m 600 sensitive gate scr
fs01...a/b jul - 02 electrical characteristics gate trigger current off-state leakage current on-state voltage on-state threshold voltage dinamic resistance gate trigger voltage gate non trigger voltage holding current latching current parameter conditions sensitivity unit symbol i gt i drm v d = 12 v dc , r l = 140 w , t j = 25 ? 03 20 200 ? 04 15 50 100 1 1.95 0.95 600 0.8 0.1 80 ? v v m w v v ma ma v/? min max max max max max max max min max max min min 50 80 150 a/? / i rrm v tm v t(o) r d v gt i h i l dv / dt di / dt r th(j-l) r th(j-a) critical rate of voltage rise critical rate of current rise thermal resistance junction-leads for dc thermal resistance junction-ambient ?/w ?/w v d = v drm , r gk = 1k w , t j = 125 ? t j = 25 ? v r = v rrm , at i t = 1.6 amp, tp = 380 ?, t j = 25 ? t j = 125 ? t j = 125 ? v d = 12 v dc , r l = 140 w , t j = 25 ? i t = 50 ma , r gk = 1k w , t j = 25 ? i g = 1 ma , r gk = 1k w , t j = 25 ? v d = 0.67 x v drm , r gk = 1k w , t j = 125 ? part number information 5 6 fagor scr current case voltage sensitivity f s 01 01 b a 00 forming bu packaging 11 4 25 18 0.5 5 100 7580 tr 100 ns, f = 60 hz, t j = 125 ? i g = 2 x i gt v gd v d = v drm , r l = 3.3k w , t j = 125 ? r gk = 1k w , sensitive gate scr 01 1 20 02 200 75 75
jul - 02 0 0.1 1 0.8 0.6 0.4 0.2 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 p (w) i t(av) (a) a = 30 a = 60 a = 90 a = 120 a = 180 dc a 360 fig. 1: maximum average power dissipation versus average on-state current 0 20 1 0.8 0.6 0.4 0.2 0 40 60 80 100 120 140 p (w) fig. 2: correlation between maximum average power dissipation and maximum allowable temperature (tamb and t lead). t lead (?) -45 -65 -85 -105 -125 tamb ( c) rth (j-a) rth (j-l) 1 0.8 0.6 0.4 0.2 0 i t(av) (a) fig. 3: average on-state current versus lead temperature 0 20 40 60 80 100 120 140 dc a = 180 t lead (?) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 igt (tj) fig. 5: relative variation of gate trigger current and holding current versus junction temperature. -40 -20 0 60 80 100 120 140 igt (tj = 25 ?) ih (tj) ih (tj = 25 ?) 4020 ih tj (?) igt 1 10 100 1,000 fig. 6: non repetitive surge peak on-state current versus number of cycles. 8 7 6 5 4 3 2 1 0 i tsm (a) tj initial = 25 c number of cycles 1.00 0.10 0.01 zth(j-a) / rth(j-a) fig. 4: relative variation of thermal impedance junction to ambient versus pulse duration. 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 tp (s) fs01...a/b sensitive gate scr
jul - 02 fs01...a/b 5.0 ih(rgk) fig. 9: relative variation of holding current versus gate-cathode resistance (typical values). 1.0e+00 ih(rgk = 1k w ) 1.0 0.1 tj = 25 ? rgk ( w ) 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+05 1.0e+06 0 0.5 10 1 0.1 1 1.5 2 2.5 3 3.5 fig. 8: on-state characteristics (maximum values). i tm (a) 4 4.5 5 5.5 tj max vto = 0.95 v rt = 0.600 w v tm (v) tj max tj initial 25 c 1 100 10 1 0.1 10 i tsm (a). i 2 t (a 2 s) fig. 7: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp 10 ms, and corresponding value of i 2 t. tj initial = 25 ? tp(ms) i 2 t i tsm package mechanical data to92 (plastic) a b c d e f g h a b ref. dimensions milimeters min. typ. max. marking: type number weight: 0.2 g package mechanical data rd26 (plastic) - 4.55 2.42 1.15 4.55 12.7 3.55 - 0.38 0.33 1.5 4.6 2.54 1.27 4.6 14.1 3.6 1.5 0.43 0.38 - 4.65 2.66 1.39 4.65 15.5 3.65 - 0.48 0.43 a b c d e f g a b ref. dimensions millimeters min. typ. max. - 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 1.5 4.6 2.54 1.27 4.6 14.1 3.6 0.43 0.38 - 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 marking: type number weight: 0.2 g a b c d g b e f h a c d g a a b e f 45 b sensitive gate scr
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