? semiconductor components industries, llc, 2004 march, 2004 ? rev. 4 1 publication order number: nud3105/d nud3105 integrated relay, inductive load driver this device is used to switch inductive loads such as relays, solenoids incandescent lamps , and small dc motors without the need of a free?wheeling diode. the device integrates all necessary items such as the mosfet switch, esd protection, and zener clamps. it accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. features ? provides a robust driver interface between d.c. relay coil and sensitive logic circuits ? optimized to switch relays from 3.0 v to 5.0 v rail ? capable of driving relay coils rated up to 2.5 w at 5.0 v ? internal zener eliminates the need of free?wheeling diode ? internal zener clamp routes induced current to ground for quieter systems operation ? low v ds(on) reduces system current drain typical applications ? telecom: line cards, modems, answering machines, fax ? computers and office: photocopiers, printers, desktop computers ? consumer: tvs and vcrs, stereo receivers, cd players, cassette recorders ? industrial:small appliances, security systems, automated test equipment, garage door openers ? automotive: 5.0 v driven relays, motor controls, power latches, lamp drivers http://onsemi.com device package shipping 2 ordering information nud3105lt1 sot?23 3000 units/reel marking diagram 1 2 3 sot?23 to?236 case 318 internal circuit diagram drain (3) 1.0 k 300 k gate (1) source (2) jw4d jw4 = specific device code d = date code 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. relay/inductive load driver silicon smallblock 0.5 ampere, 8.0 v clamp
nud3105 http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise specified) symbol rating value unit v dss drain to source voltage ? continuous 6.0 v dc v gs gate to source voltage continuous 6.0 v dc i d drain current continuous 500 ma e z single pulse drain?to?source avalanche energy ( t jinitial = 25 c) (note 2) 50 mj e zpk repetitive pulse zener energy limit (dc 0.01%) (f = 100 hz, dc = 0.5) 4.5 mj t j junction temperature 150 c t a operating ambient temperature ?40 to 85 c t stg storage temperature range ?65 to +150 c p d total power dissipation (note 1) derating above 25 c 225 1.8 mw mw/ c r ja thermal resistance junction?to?ambient 556 c/w 1. this device contains esd protection and exceeds the following tests: human body model 2000 v per mil_std?883, method 3015. machine model method 200 v. 2. refer to the section covering avalanche and energy. typical electrical characteristics (t j = 25 c unless otherwise noted) symbol characteristic min typ max unit off characteristics v brdss drain to source sustaining voltage (internally clamped) (i d = 10 ma) 6.0 8.0 9.0 v b vgso i g = 1.0 ma ? ? 8.0 v i dss drain to source leakage current (v ds = 5.5 v , v gs = 0 v, t j = 25 c) (v ds = 5.5 v, v gs = 0 v, t j = 85 c ) ? ? ? ? 15 15 a i gss gate body leakage current (v gs = 3.0 v, v ds = 0 v) (v gs = 5.0 v, v ds = 0 v) 5.0 ? ? ? 19 50 a on characteristics v gs(th) gate threshold voltage (v gs = v ds , i d = 1.0 ma) (v gs = v ds , i d = 1.0 ma, t j = 85 c) 0.8 0.8 1.2 ? 1.4 1.4 v r ds(on) drain to source on?resistance (i d = 250 ma, v gs = 3.0 v) (i d = 500 ma, v gs = 3.0 v) (i d = 500 ma, v gs = 5.0 v) (i d = 500 ma, v gs = 3.0 v, t j =85 c) (i d = 500 ma, v gs = 5.0 v, t j =85 c) ? ? ? ? ? ? ? ? ? ? 1.2 1.3 0.9 1.3 0.9 i ds(on) output continuous current (v ds = 0.25 v, v gs = 3.0 v) (v ds = 0.25 v, v gs = 3.0 v, t j = 85 c) 300 200 400 ? ? ? ma g fs forward transconductance (v out = 5.0 v, i out = 0.25 a) 350 570 ? mmhos dynamic characteristics c iss input capacitance (v ds = 5.0 v,v gs = 0 v, f = 10 khz) ? 25 ? pf c oss output capacitance (v ds = 5.0 v, v gs = 0 v, f = 10 khz) ? 37 ? pf
nud3105 http://onsemi.com 3 typical electrical characteristics (t j = 25 c unless otherwise noted) symbol unit max typ min characteristic dynamic characteristics c rss transfer capacitance (v ds = 5.0 v, v gs = 0 v, f = 10 khz) ? 8.0 ? pf switching characteristics symbol characteristic min typ max units t phl t plh t phl t plh propagation delay times: high to low propagation delay; figure 1 (5.0 v) low to high propagation delay; figure 1 (5.0 v) high to low propagation delay; figure 1 (3.0 v) low to high propagation delay; figure 1 (3.0 v) ? ? ? ? 25 80 44 44 ? ? ? ? ns t f t r t f t r transition times: fall time; figure 1 (5.0 v) rise time; figure 1 (5.0 v) fall time; figure 1 (3.0 v) rise time; figure 1 (3.0 v) ? ? ? ? 23 32 53 30 ? ? ? ? ns ? figure 1. switching waveforms v out gnd v in gnd v z v cc v cc t r t f t plh t phl 50% 90% 50% 10%
nud3105 http://onsemi.com 4 typical characteristics v z , zener clamp voltage (v) v gs = 0 v 11.0 12.0 10.0 9.0 8.0 7.0 13.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 v ds , drain to source voltage (v) figure 2. output characteristics v gs , gate?to?source voltage (v) figure 3. transfer function temperature ( c) figure 4. on resistance variation vs. temperature figure 5. r ds(on) variation with gate?to?source voltage figure 6. zener voltage vs. temperature i z , zener current (ma) figure 7. zener clamp voltage vs. zener current i d , drain current (a) ?50 ?25 0 25 50 75 100 1200 1000 800 600 400 200 0 125 r ds(on) , drain?to?source resistance (m ) v z , zener voltage (v) ?50 ?25 0 25 50 75 100 125 i z = 10 ma i d = 0.25 a v gs = 3.0 v 50 c 1.0 1.2 1.4 1.6 0.8 50 45 40 35 30 25 20 2.0 15 1.8 r ds(on) , drain?to?source resistance ( ) i d = 250 a 1.0 10 0.1 100 v gs = 0 v v gs = 1.0 v i d , drain current (a) v gs = 5.0 v v gs = 3.0 v v gs = 2.0 v t j = 25 c 10 1.0 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 85 c ?40 c v ds = 0.8 v i d = 0.5 a v gs = 3.0 v i d = 0.5 a v gs = 5.0 v v gs , gate?to?source voltage (v) 50 c 85 c ?40 c 125 c 8.20 8.18 8.16 8.14 8.12 8.10 8.08 8.06 8.04 8.02 8.00 temperature ( c) 10 1.0 0.1 0.01 0.001 0.0001 0.00001 85 c ?40 c 25 c 25 c 25 c 1000 6.0
nud3105 http://onsemi.com 5 typical characteristics v ds , drain?to?source voltage (v) 0.01 100 10 0.1 0.1 1.0 0.01 i d , drain current (a) 1.0 r ds(on) limit thermal limit package limit i d , drain current (a) figure 8. on?resistance vs. drain current and temperature temperature ( c) figure 9. gate leakage vs. temperature r ds(on) , drain?to?source resistance ( ) 1.0 0.9 0.8 0.5 0.6 0.7 1.1 1.2 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 i gss , gate leakage ( a) 30 25 0 5 10 35 40 ?50 ?25 0 25 50 75 100 125 20 15 125 c 85 c 50 c 25 c ?40 c v gs = 3.0 v v gs = 5.0 v figure 10. safe operating area figure 11. transient thermal response 0.01 0.1 1.0 10 100 1000 10,000 100,000 1,000,000 d = 0.5 0.2 0.1 0.05 0.02 single pulse 0.01 p d(pk) t 1 t 2 duty cycle = t 1 /t 2 period pw r(t), transient thermal resistance (normalized) 1.0 0.1 0.01 0.001 t1, pulse width (ms) dc pw = 0.1 s dc = 50% pw = 7.0 ms dc = 5% pw = 10 ms dc = 20% typical i z vs. v z v (br)dss min = 6.0 v i d?continuous = 0.5 a v gs = 3.0 v, t c = 25 c
nud3105 http://onsemi.com 6 designing with this data sheet 1. determine the maximum inductive load current (at max v cc , min coil resistance & usually minimum temperature) that the nud3105 will have to drive and make sure it is less than the max rated current. 2. for pulsed operation, use the transient thermal response of figure 11 and the instructions with it to determine the maximum limit on transistor power dissipation for the desired duty cycle and temperature range. 3. use figures 10 and 11 with the soa notes to insure that instantaneous operation does not push the device beyond the limits of the soa plot. 4. verify that the circuit driving the gate will meet the v gs(th) from the electrical characteristics table. 5. using the max output current calculated in step 1, check figure 7 to insure that the range of zener clamp voltage over temperature will satisfy all system & emi requirements. 6. use i gss and i dss from the electrical characteristics table to insure that aoffo state leakage over temperature and voltage extremes does not violate any system requirements. 7. review circuit operation and insure none of the device max ratings are being exceeded. figure 12. a 200 mw, 5.0 v dual coil latching relay application with 3.0 v level translating interface +4.5 v cc +5.5 vdc + v out (3) + v in (1) gnd (2) nud3105lt1 +3.0 v dd +3.75 vdc applications diagrams v out (3) v in (1) gnd (2) nud3105lt1
nud3105 http://onsemi.com 7 figure 13. a 140 mw, 5.0 v relay with ttl interface +4.5 to +5.5 vdc + v out (3) ? aromat tx2?5v max continuous current calculation for tx2?5v relay, r1 = 178 nominal @ r a = 25 c assuming 10% make tolerance, r1 = 178 * 0.9 = 160 min @ t a = 25 c t c for annealed copper wire is 0.4%/ c r1 = 160 * [1+(0.004) * (?40 ?25 )] = 118 min @ ?40 c i o max = (5.5 v max ? 0.25v) /118 = 45 ma + v out (3) ? aromat js1e?5v figure 14. a quad 5.0 v, 360 mw coil relay bank ? + aromat js1e?5v + ? aromat js1e?5v ? + aromat js1e?5v +4.5 to +5.5 vdc v in (1) gnd (2) nud3105lt1 v in (1) gnd (2) nud3105lt1
nud3105 http://onsemi.com 8 package dimensions case 318?08 issue ah sot?23 (to?236) d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318-03 and -07 obsolete, new standard 318-08. style 21: pin 1. gate 2. source 3. drain *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 nud3105/d smallblock is a trademark of semiconductor components industries, llc (scillc). literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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