savantic semiconductor product specification silicon npn power transistors 2SD1158 description with to-220 package high speed switching high dc current gain low collector saturation voltage applications switching regulators dc-dc converters solid state relay general purpose power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 50 v v ebo emitter-base voltage open collector 10 v i c collector current 8 a i b base current 2 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.25 /w
savantic semiconductor product specification 2 silicon npn power transistors 2SD1158 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 50 v v (br)cbo collector-base breakdown voltage i c =0.1ma ;i e =0 80 v v (br)ebo emitter-base breakdown voltage i e =0.1ma ;i c =0 10 v v cesat collector-emitter saturation voltage i c =2a, i b =0.1a 0.5 v v besat base-emitter saturation voltage i c =2a, i b =0.1a 1.5 v i cbo collector cut-off current v cb =80v;i e =0 0.1 ma i ebo emitter cut-off current v eb =10v; i c =0 0.1 ma h fe dc current gain i c =1a ; v ce =5v 250 switching times t on turn-on time 0.5 s t s storage time 3.0 s t f fall time i c =5a;i b1 =-i b2 =0.5a r l =6 ? pw = 20s, duty @ 2% 0.8 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1158 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SD1158
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