2005. 1. 17 1/3 semiconductor technical data PZTA44 epitaxial planar npn transistor revision no : 0 high voltage application. telephone application. features high breakdown voltage. collector power dissipation : p c =2w(t c =25 ) maximum rating (ta=25 ) + _ 6.5 0.2 + _ + _ + _ a 1 123 3 2 sot-223 l k g j h d f e b c 0.26+0.09/-0.02 10 max 0.1 max 1.75 0.25 3.0+0.15/-0.1 2.3 typ 7 0.3 0.7+0.15/-0.1 1.8 max 3.5 0.2 dim millimeters h e b j f f g k l c d a 1. base 2. collector (heat sink) 3. emitter electrical characteristics (ta=25 ) *pulse test : pulse width 300 s, duty cycle 2.0% characteristic symbol rating unit collector-base voltage v cbo 500 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 6 v collector current i c 300 ma collector power dissipation (t c =25 ) p c 2 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 500 - - v collector-emitter breakdown voltage (1) v (br)ceo i c =1ma, i b =0 400 - - v collector-emitter breakdown voltage (2) v (br)ces i c =100 a, i b =0 400 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6.0 - - v collector cut off current i cbo v cb =400v, i e =0 - - 100 na v cb =320v, i e =0 collector cut off current i ces v ce =400v, i b =0 - - 500 na v ce =320v, i b =0 emitter cutoff current i ebo v eb =4v, i c =0 - - 100 na dc current gain * h fe v ce =10v, i c =1ma 40 - - v ce =10v, i c =10ma 50 - 200 v ce =10v, i c =50ma 45 - - v ce =10v, i c =100ma 40 - - collector-emitter saturation voltage * v ce(sat) i c =10ma, i b =1ma - - 0.5 v base-emitter saturation voltage * v be(sat) i c =10ma, i b =1ma - - 0.75 v collector output capacitane c ob v cb =20v, i e =0, f=1mhz - - 7 pf
2005. 1. 17 2/3 PZTA44 revision no : 0 fe ce b time t ( s) collector current i (ma) c turn-on switching characteristics c collector current i (a) dc current gain h collector current i (ma) time t ( s) c turn-off switching characteristics saturation voltage collector current i (ma) c ib capacitance c (pf), c (pf) base current i ( a) collector-base voltage v (v) collector emitter voltage v (v) cb collector saturation region common emitter ob v , v (v) be(sat) ce(sat) 0.1 100 10 3 1 h - i 110k 10 100 13 0.1 10 100 0.1 1 0 10 100 v , v - i 10 100 0 0.1 1 1k 10k 10 100 c , c - v fe c 0 20 40 60 80 100 120 140 160 1k 180 200 v =10v ce 30 0.3 0.5 1 3 5 10 v =150v i /i =10 ta=25 c v (off)=4v cc c b be tr td 30 0.3 0.5 1 3 5 10 30 50 100 ts tf v =150v i /i =10 ta=25 c cc c b ib ob cb 1k 1 3 5 10 30 50 100 300 500 1k c c ib ob ta=25 c f=1mhz be(sat) ce(sat) c 1k 0.2 0.4 0.6 0.8 1.0 v @i /i =10 be(sat) c b @v =10v be(on) v ce v @i /i =10 c b ce(sat) 100k 0.1 0.2 0.3 0.4 0.5 i =1ma c i =10ma c i =50ma c ta=25 c ta=25 c
2005. 1. 17 3/3 PZTA44 revision no : 0 h - i c collector current i (ma) 0.1 1 100 10 fe small signal current gain h fe c 1 k 0.1 0.3 1 3 10 30 100 v =10v f=10mhz ta=25 c ce
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