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revisions ltr description date (yr-mo-da) approved a change to the delta limit in table iib for the input leakage current. update boilerplate. -rrp 01-05-11 r. monnin rev sheet rev aaaaaaa sheet 15 16 17 18 19 20 21 rev status rev aaaaaaaaaaaaa a of sheets sheet 1234567891011121314 pmic n/a prepared by rajesh pithadia defense supply center columbus standard microcircuit drawing checked by rajesh pithadia columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all departments approved by raymond monnin microcircuit, linear, radiation hardened, cmos, high speed quad spst analog switch, monolithic silicon and agencies of the department of defense drawing approval date 00-05-25 amsc n/a revision level a size a cage code 67268 5962-99618 sheet 1 of 21 dscc form 2233 apr 97 5962-e386-01 distribution statement a. approved for public release; distribution is unlimited.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope. this drawing documents three product assurance class levels consisting of high reliability (device classes q and m), space application (device class v) and for appropriate satellite and similar applications (device class t). a choice of ca se outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice o f radiation hardness assurance (rha) levels are reflected in the pin. for device class t, the user is encouraged to review the manufacturers quality management (qm) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 pin. the pin is as shown in the following example: 5962 f 99618 01 v e c federal stock class desi g nator rha desi g nator ( see 1.2.1 ) device type ( see 1.2.2 ) device class desi g nator case outline ( see 1.2.4 ) lead finish ( see 1.2.5 ) \ / ( see 1.2.3 ) \/ drawing number 1.2.1 rha designator. device classes q, t and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s). the device type(s) identify the circuit function as follows: device type generic number circuit function 01 hs-201hsrh radiation hardened, di, high speed quad spst cmos analog switch 1.2.3 device class designator. the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non- jan class level b microcircuits in accordance with mil-prf-38535, appendix a q, v certification and qualification to mil-prf-38535 t certification and qualification to mil-prf-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 case outline(s). the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style e cdip2-t16 16 dual-in-line x cdfp4-f16 16 flat pack 1.2.5 lead finish. the lead finish is as specified in mil-prf-38535 for device classes q, t and v or mil-prf-38535, appendix a for device class m.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 3 dscc form 2234 apr 97 1.3 absolute maximum ratings. 1 / 2 / positive supply voltage (v+ to ground) ..................................................................... +18 v negative supply voltage (v- to ground) .................................................................... -18 v digital input voltage (v in ) .......................................................................................... v- (-4 v) to v+ (+4 v) or 20 ma, whichever comes first analog input voltage, one switch (v s ) ....................................................................... v- (-2 v) to v+ (+2 v) or 20 ma whichever comes first maximum power dissipation (p d ) .............................................................................. 750 mw maximum junction temperature (t j ) .......................................................................... +175 c lead temperature (soldering, 10 seconds) ............................................................... +275 c thermal resistance, junction-to-case ( jc ) case outlines e and x ............................................................................................ 12 c/w thermal resistance, junction-to-ambient ( ja ): case outline e ....................................................................................................... 80 c/w case outline x ....................................................................................................... 95 c/w storage temperature range ...................................................................................... -65 c to +150 c peak current, s or d (pulsed at 1 ms, 10 percent duty cycle max) ........................... 50 ma continuous current, any terminal (except s or d) ..................................................... 25 ma 1.4 recommended operating conditions. positive supply voltage (v+) ...................................................................................... +15 v dc negative supply voltage (v-) ..................................................................................... -15 v d c minimum high level input voltage (v ih ) ...................................................................... 2.4 v dc maximum low level input voltage (v il ) ....................................................................... 0.8 v dc ambient operating temperature range (t a ) ............................................................... -55 c to +125 c ground (gnd) ........................................................................................................... 0 v dc 1.5 radiation features: maximum total dose available (dose rate = 50 C 300 rads(si)/s): device classes m, q, and v .................................................................................. 300 krads (s i) device class t ....................................................................................................... 100 krads (si) dose rate upset (20 ns pulse) ................................................................................... not tes ted latch-up .................................................................................................................. .. none 3/ sep effective let no upset ......................................................................................... tbd 4/ 2. applicable documents 2.1 government specification, standards, and handbooks. the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those liste d in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. 1/ stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2/ unless otherwise specified, all voltages are referenced to ground. 3/ guaranteed by process or design, not tested. 4/ values to be specified when testing is completed.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 4 dscc form 2234 apr 97 standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard electronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specification, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence. in the event of a conflict between the text of this drawing and the references cited herein, the tex t of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements. the individual item requirements for device classes q, t and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.1.1 microcircuit die. for the requirements for microcircuit die, see appendix a to this document. 3.2 design, construction, and physical dimensions. the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q, t and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines. the case outlines shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections. the terminal connections shall be as specified on figure 1. 3.2.3 functional diagram. the functional diagram shall be as specified on figure 2. 3.2.4 radiation exposure circuit. the radiation exposure circuit shall be as specified on figure 4. 3.3 electrical performance characteristics and postirradiation parameter limits. unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table i and shall apply over th e full ambient operating temperature range. 3.4 electrical test requirements. the electrical test requirements shall be the subgroups specified in table iia. the electr ical tests for each subgroup are defined in table i. 3.5 marking. the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q, t and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark. the certification mark for device classes q, t and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 5 dscc form 2234 apr 97 table i. electrical performance characteristics. test symbol conditions 1/ -55 c < t a < +125 c v+ = +15 v dc, v- = -15 v dc unless otherwise specified group a subgroups device type limits 2/ unit min max analog signal range v s t a = +25 c 3/ 401 15 v on resistance r ds(on) v s = 10 v, i d = 1 ma v in = 0.8 v 101 50 2,3 75 m,d,p,l,r,f 1 50 source off leakage current i s(off) v s = 14 v, v d = 14 v v in = 2.4 v 101 10 na 2, 3 100 m,d,p,l,r,f 1 10 drain off leakage current i d(off) v s = 14 v, v d = 14 v v in = 2.4 v 101 10 na 2, 3 100 m,d,p,l,r,f 1 10 channel on leakage current i d(on) v d = v s = 14 v, v in = 0.8 v 101 10 na 2, 3 100 m,d,p,l,r,f 1 10 input leakage current (low) i il v in under test = 0.8 v all other v in = 4.0 v 1,2,3 01 500 a m,d,p,l,r,f 1 500 input leakage current (high) i ih v in under test = 4.0 v all other v in = 0.8 v 1,2,3 01 40 a m,d,p,l,r,f 1 40 positive supply current i+ v in = 2.4 v or v in = 0.8 v for all switches 1,2,3 01 12 ma m,d,p,l,r,f 1 12 negative supply current i- v in = 2.4 v or v in = 0.8 v for all switches 1,2,3 01 12 ma m,d,p,l,r,f 1 12 input threshold (low) v al v s = -10 v input, v d = 1 ma load 1,2,3 01 0.8 v m,d,p,l,r,f 1 0.8 input threshold (high) v ah v s = -10 v input, v d = 1 ma load 1,2,3 01 2.4 v m,d,p,l,r,f 1 2.4 see footnotes at end of table.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 6 dscc form 2234 apr 97 table i. electrical performance characteristics - continued. test symbol conditions 1/ -55 c < t a < +125 c v+ = +15 v dc, v- = -15 v dc unless otherwise specified group a subgroups device type limits 2/ unit min max switch on time t on r l = 1 k , c l = 35 pf, v s = 10 v, v ih = +3 v, v il = 0 v, see figure 3 9 01 110 ns 10,11 130 m,d,p,l,r,f 9 130 switch off time t off r l = 1 k , c l = 35 pf, v s = 10 v, v ih = +3 v, v il = 0 v, see figure 3 901 80ns 10,11 110 m,d,p,l,r,f 9 80 power off (v+ tied to v-) leakage current into the source terminal of an off switch with overvoltage applied. i s (off) over- voltage v s = 17 v, v d = 0 v unused inputs tied to ground 101-1.01.0 a 2,3 -5.0 5.0 m,d,p,l,r,f 1 -5.0 5.0 power off (v+ tied to v-) leakage current into the drain terminal of an off switch with overvoltage applied. i d (off) over- voltage v d = 17 v, v d = 0 v unused inputs tied to ground 101-1.01.0 a 2,3 -5.0 5.0 m,d,p,l,r,f 1 -5.0 5.0 1/ devices supplied to this drawing meet all levels m, d, p, l, r, and f for device classes m, q, & v and levels m, d, p, l, r for device class t. however, device classes m, q, & v is only tested at the f level and device class t is only tested at th e r level (see 1.5 herein). pre and post irradiation values are identical unless otherwise specified in table i. when perfor ming post irradiation electrical measurements for any rha level, t a = +25 c (see 1.5 herein). 2/ the limiting terms min (minimum) and max (maximum) shall be considered to apply to magnitudes only. negative current shall be defined as conventional current flow out of a device terminal. 3/ these parameters may not be tested, but shall be guaranteed to the limits specified in table i herein.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 7 dscc form 2234 apr 97 3.6 certificate of compliance. for device classes q, t and v, a certificate of compliance shall be required from a qml- 38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil- hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q, t and v, the requirements of mil-prf-38535 and herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance. a certificate of conformance as required for device classes q, t and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m. for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m. for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m. device class m devices covered by this drawing shall be in microcircuit group number 82 (see mil-prf-38535, appendix a). 4. quality assurance provisions 4.1 sampling and inspection. for device classes q, and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's quality management (qm) plan, including screening (4.2), qualification (4.3), and conformance inspection (4.4). the modification in the qm plan shall not affect the form, fit, or func tion as described herein. for device class t, sampling and inspection procedures shall be in accordance with mil-prf-38535 and the device manufacturers qm plan including screening, qualification, and conformance inspection. the performance envelope and reliability information shall be as specified in the manufacturers qm plan. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening. for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conducted on all devices prior to quality conformance inspection. for device class t, screening shall be in accordance with the device manufacturers quality management (qm) plan, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 additional criteria for device class m. a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameters shall be as specified in table iia herein.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 8 dscc form 2234 apr 97 device type 01 case outlines e and x terminal number terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 in 1 d 1 s 1 v- gnd s 4 d 4 in 4 in 3 d 3 s 3 nc v+ s 2 d 2 in 2 notes: 1. nc = no connection. 2. the source and drain are interchangeable and have been arbitrarily established. figure 1. terminal connections.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 9 dscc form 2234 apr 97 figure 2. functional diagram. note: rise time and fall time are less than 20 ns. figure 3. switching waveforms.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 10 dscc form 2234 apr 97 r1 = 10 k 5% c1 = 0.1 f d1 = 1n4002 or equivalent v1 = +15 v v2 = -15 v figure 4. radiation exposure circuit.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 11 dscc form 2234 apr 97 4.2.2 additional criteria for device classes q, t and v. a. the burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. for device classes q, t and v interim and final electrical test parameters shall be as specified in table iia herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil-prf-38535, appendix b or as modified in the device manufacturers quality management (qm) plan. 4.3 qualification inspection for device classes q, t and v. qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. qualification inspection for device class t shall be in accordance with the device manufacturers quality management (qm) plan. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4 conformance inspection. technology conformance inspection for classes q and v shall be in accordance with mil-prf-38535, or as specified in the qm plan, including groups a, b, c, d, and e inspections and as specified herein. quality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendix a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). technology conformance inspection for class t shall be in accordance with the device manufacturers quality management (qm) plan. 4.4.1 group a inspection. a. tests shall be as specified in table iia herein. b. subgroups 5, 6, 7, and 8 in table i, method 5005 of mil-std-883 shall be omitted. 4.4.2 group c inspection. the group c inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m. steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q, t and v. the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf- 38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specifie d in test method 1005 of mil-std-883.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 12 dscc form 2234 apr 97 table iia. electrical test requirements. test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v device class t interim electrical parameters (see 4.2) 111 as specified in qm plan final electrical parameters (see 4.2) 1,2,3,9,10,11 1/ 1,2,3,9, 1/ 10,11 1,2,3,9, 2/ 3 / 10,11 as specified in qm plan group a test requirements (see 4.4) 1, 2, 3, 4, 9, 10, 11 1, 2, 3, 4, 9, 10, 11 1, 2, 3, 4, 9, 10, 11 as specified in qm plan group c end-point electrical parameters (see 4.4) 1,2,3 1,2,3 1,2,3 3/ as specified in qm plan group d end-point electrical parameters (see 4.4) 111 as specified in qm plan group e end-point electrical parameters (see 4.4) 1,9 1,9 1,9 as specified in qm plan 1/ pda applies to subgroup 1. 2/ pda applies to subgroups 1, 9, and s. 3/ delta limits as specified in table iib herein shall be required where specified, and the delta values shall be completed with reference to the zero hour electrical parameters (see table i). table iib. burn-in and operating life test, delta parameters (+25 c). parameters symbol delta limits on resistance r ds(on) 10 source off leakage current i s(off) 2 na drain off leakage current i d(off) 2 na channel on leakage current i d(on) 2 na input leakage current (low) i il 500 na input leakage current (high) i ih 500 na positive supply current i+ 2.4 ma negative supply current i- 2.4 ma 4.4.3 group d inspection. the group d inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.4 group e inspection. group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). rha levels for device classes m, q and v shall be as specified in mil-prf-38535. end-point electrical parameters shall be as specified in table iia herein. 4.4.4.1 group e inspection for device class t. for device class t, the rha requirements shall be in accordance with the class t radiation requirements of mil-prf-38535. end-point electrical parameters shall be as specified in table iia herein. 4.4.4.2 total dose irradiation testing. total dose irradiation testing shall be performed in accordance with mil-std-883 method 1019, condition a and as specified herein. for device class t, the total dose requirements shall be in accordance with the class t radiation requirements of mil-prf-38535.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 13 dscc form 2234 apr 97 4.4.4.2.2 accelerated aging testing. accelerated aging testing shall be performed on all devices requiring a rha level greater than 5k rads (si). the post-anneal end-point electrical parameter limits shall be as specified in table i herein and s hall be the pre-irradiation end-point electrical parameter limits at 25 c 5 c. testing shall be performed at initial qualification and after any design or process changes which may affect the rha response of the device. 4.4.4.3 dose rate induced latchup testing. dose rate induced latchup testing shall be performed in accordance with test method 1020 of mil-std-883 and as specified herein (see 1.5 herein). tests shall be performed on devices, sec, or approved test structures at technology qualification and after any design or process changes which may effect the rha capability of the process. 4.4.4.4 dose rate upset testing. dose rate upset testing shall be performed in accordance with test method 1023 of mil-std-883 and herein (see 1.5 herein). a. transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may affect the rha performance of the devices. test 10 devices with 0 defects unless otherwise specified. b. transient dose rate upset testing for class q, t, and v devices shall be performed as specified by a trb approved radiation hardness assurance plan and mil-prf-38535. 4.4.4.5 dose rate burnout. when required by the customer, test shall be performed on devices, sec, or approved test structures at technology qualifications and after any design or process changes which may effect the rha capability of the process. dose rate burnout shall be performed in accordance with test method 1023 of mil-std-883 and as specified herein. 4.4.4.6 single event phenomena (sep). when specified in the purchase order or contract sep testing shall be required on class t and v devices (see 1.5 herein). sep testing shall be performed on a technology process on the standard evaluation circuit (sec) or alternate sep test vehicle as approved by the qualifying activity at initial qualification and after any desig n or process changes which may affect the upset or latchup characteristics. the recommended test conditions for sep are as follows: a. the ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60 ). no shadowing of the ion beam due to fixturing or package related effects is allowed. b. the fluence shall be 100 errors or 10 6 ions/cm 2 . c. the flux shall be between 10 2 and 10 5 ions/cm 2 /s. the cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. the particle range shall be 20 micron in silicon. e. the test temperature shall be +25 c and the maximum rated operating temperature 10 c. f. bias conditions shall be defined by the manufacturer for the latchup measurements. g. test four devices with zero failures. 4.5 methods of inspection. methods of inspection shall be specified as follows: 4.5.1 voltage and current. unless otherwise specified, all voltages given are referenced to the microcircuit gnd terminal. currents given are conventional current and positive when flowing into the referenced terminal. 5. packaging 5.1 packaging requirements. the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q, t and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use. microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 replaceability. microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 14 dscc form 2234 apr 97 6.1.2 substitutability. device class q devices will replace device class m devices. 6.2 configuration control of smd's. all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users. military and industrial users should inform defense supply center columbus when a system application requires configuration control and which smd's are applicable to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact dscc-va, telephone (614) 692-0544. 6.4 comments. comments on this drawing should be directed to dscc-va , columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions. the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. 6.6 sources of supply. 6.6.1 sources of supply for device classes q, t and v. sources of supply for device classes q, t and v are listed in qml- 38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m. approved sources of supply for class m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va. 6.7 additional information. when applicable, a copy of the following additional data shall be maintained and available from the device manufacturer: a. rha upset levels. b. test conditions (sep). c. number of upsets (sep). d. number of transients (sep). e. occurrence of latchup (sep).
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 15 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-99618 10. scope 10.1 scope. this appendix establishes minimum requirements for microcircuit die to be supplied under the qualified manufacturers list (qml) program. qml microcircuit die meeting the requirements of mil-prf-38535 and the manufacturers approved qml plan for use in monolithic microcircuits, multichip modules (mcms), hybrids, electronic modules, or devices using chip and wire designs in accordance with mil-prf-38534 are specified herein. two product assurance classes consisting of military high reliability (device class q) and space application (device class v) are reflected in the part or identification number (pin). when available a choice of radiation hardiness assurance (rha) levels are reflected in the pin. 10.2 pin. the pin is as shown in the following example: 5962 f 99618 01 v 9 a federal rha device device die die stock class designator type class code details designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) \ / (see 10.2.3) \/ drawing number 10.2.1 rha designator. device classes q and v rha identified die shall meet the mil-prf-38535 specified rha levels. a dash (-) indicates a non-rha die. 10.2.2 device type(s). the device type(s) shall identify the circuit function as follows: device type generic number circuit function 01 hs-201hsrh radiation hardened, di, high speed quad spst cmos analog switch 10.2.3 device class designator. device class device requirements documentation q or v certification and qualification to the die requirements of mil-prf-38535
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 16 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-99618 10.2.4. die details. the die details designation shall be a unique letter which designates the dies physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for ea ch product and variant supplied to this appendix. 10.2.4.1 die physical dimensions. die type figure number 01 a-1 10.2.4.2. die bonding pad locations and electrical functions. die type figure number 01 a-1 10.2.4.3. interface materials. die type figure number 01 a-1 10.2.4.4. assembly related information. die type figure number 01 a-1 10.3. absolute maximum ratings. see paragraph 1.3 within the body of this drawing for details. 10.4 recommended operating conditions. see paragraph 1.4 within the body of this drawing for details.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 17 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-99618 20. applicable documents. 20.1 government specifications, standards, and handbooks. unless otherwise specified, the following specification, standard, and handbook of the issue listed in that issue of the department of defense index of specifications and standards specified in the solicitation, form a part of this drawing to the extent specified herein. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. handbook department of defense mil-hdbk-103 - list of standard microcircuit drawings (smds). (copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). 20.2. order of precedence. in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 30. requirements 30.1 item requirements. the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturers quality management (qm) plan. the modification in the qm plan shall not effect the form, fit or function as described herein. 30.2 design, construction and physical dimensions. the design, construction and physical dimensions shall be as specified in mil-prf-38535 and the manufacturers qm plan, for device classes q and v and herein. 30.2.1 die physical dimensions. the die physical dimensions shall be as specified in 10.2.4.1 and on figure a-1. 30.2.2 die bonding pad locations and electrical functions. the die bonding pad locations and electrical functions shall be as specified in 10.2.4.2 and on figure a-1. 30.2.3 interface materials. the interface materials for the die shall be as specified in 10.2.4.3 and on figure a-1. 30.2.4 assembly related information. the assembly related information shall be as specified in 10.2.4.4 and figure a-1. 30.2.5 radiation exposure circuit. the radiation exposure circuit shall be as defined within paragraph 3.2.4. of the body of this document.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 18 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-99618 30.3 electrical performance characteristics and post-irradiation parameter limits. unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table i of the body of this document. 30.4 electrical test requirements. the wafer probe test requirements shall include functional and parametric testing sufficien t to make the packaged die capable of meeting the electrical performance requirements in table i. 30.5 marking. as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the pin listed in 10.2 herein. the certification mark shall be a qml or q as required by mil-prf-38535. 30.6 certification of compliance. for device classes q and v, a certificate of compliance shall be required from a qml- 38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). the certificate of complian ce submitted to dscc-va prior to listing as an approved source of supply for this appendix shall affirm that the manufacturers product meets, for device classes q and v, the requirements of mil-prf-38535 and the requirements herein. 30.7 certificate of conformance. a certificate of conformance as required for device classes q and v in mil-prf-38535 shall be provided with each lot of microcircuit die delivered to this drawing. 40. quality assurance provisions 40.1 sampling and inspection. for device classes q and v, die sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturers quality management (qm) plan. the modifications in the qm plan shall not effect the form, fit or function as described herein. 40.2 screening. for device classes q and v, screening shall be in accordance with mil-prf-38535, and as defined in the manufacturers qm plan. as a minimum it shall consist of: a) wafer lot acceptance for class v product using the criteria defined within mil-std-883 test method 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class q or v criteria defined within mil-std-883 test method 2010 or the alternate procedures allowed within mil-std-883 test method 5004. 40.3 conformance inspection. 40.3.1 group e inspection. group e inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). rha levels for device classes q and v shall be as specified in mil-prf-38535. end point electrical testing of packaged die shall be as specified in table iia herein. group e tests and conditions are as specified within paragraphs 4.4.4.1 , 4.4.4.2, 4.4.4.2.2, 4.4.4.3, 4.4.4.4, 4.4.4.5, and 4.4.4.6. 50. die carrier 50.1 die carrier requirements. the requirements for the die carrier shall be accordance with the manufacturers qm plan or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical and electrostatic protection.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 19 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-99618 60 notes 60.1 intended use. microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with mil-prf-38535 or mil-prf-38534 for government microcircuit applications (original equipment), design applications and logistics purposes. 60.2 comments. comments on this appendix should be directed to dscc-va, columbus, ohio, 43216-5000 or telephone (614)-692-0536. 60.3 abbreviations, symbols and definitions. the abbreviations, symbols, and definitions used herein are defined within mil-prf-38535 and mil-std-1331. 60.4 sources of supply for device classes q and v. sources of supply for device classes q and v are listed in qml-38535. the vendors listed within qml-38535 have submitted a certificate of compliance (see 30.6 herein) to dscc-va and have agreed to this drawing.
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 20 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-99618 note: pad numbers reflect terminal numbers when placed in case outlines e and x (see figure 1). figure a-1. die bonding pad locations and electrical functions. (10) d3 (11) s3 (9) in3 (8) in4 d4 (7) s4 (6) (13) v+ (14) s2 (15) d2 gnd (5) v- (4) s1 (3) d1 (2) in1 (1) in2 (16)
standard microcircuit drawing size a 5962-99618 defense supply center columbus columbus, ohio 43216-5000 revision level a sheet 21 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-99618 die physical dimensions. die size: 4630 x 2670 microns die thickness: 19 mils 1 mils interface materials. top metallization: al si cu 16 k? 2 k? backside metallization: none glassivation. type: psg thickness: 8 k? 1 k? substrate: di (dielectric isolation) assembly related information. substrate potential: insulator special assembly instructions: none figure a-1. die bonding pad locations and electrical functions C continued.
standard microcircuit drawing bulletin date: 01-05-11 approved sources of supply for smd 5962-99618 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1/ vendor cage number vendor similar pin 2/ 5962f9961801vec 34371 hs1-201hsrh-q 5962f9961801qec 34371 hs1-201hsrh-8 5962R9961801TEC 34371 hs1-201hsrh-t 5962f9961801vxc 34371 hs9-201hsrh-q 5962f9961801qxc 34371 hs9-201hsrh-8 5962r9961801txc 34371 hs9-201hsrh-t 5962f9961801v9a 34371 hs0-201hsrh-q 1/ the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2/ caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. vendor cage vendor name number and address 34371 intersil corporation p.o. box 883 melbourne, fl 32902-0883 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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