2n3958 vishay siliconix document number: 70256 s-04031?rev. b, 04-jun-01 www.vishay.com 8-1 monolithic n-channel jfet dual
v gs(off) (v) v (br)gss min (v) g fs min (ms) i g max (pa) v gs1 ? v gs2 max (mv) ?1.0 to ?4.5 ?50 1 ?50 25
monolithic design high slew rate low offset/drift voltage low gate leakage: 5 pa low noise: 9 nv ? hz high cmrr: 100 db tight differential match vs. current improved op amp speed, settling time accuracy minimum input error/trimming requirement insignificant signal loss/error voltage high system sensitivity minimum error with large input signal wideband differential amps high-speed, temp-compensated, single-ended input amps high speed comparators impedance converters the low cost 2n3958 jfet dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. this series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with i g guaranteed at v dg = 20 v. the hermetically-sealed to-71 package is available with full military processing (see military information and the 2n5545/5546/5547jantx/jantxv data sheet). for similar products see 2n5196/5197/5198/5199, the low-noise u/sst401 series, the high-gain 2n5911/5912, and the low-leakage u421/423 data sheets. to-71 top view g 1 s 1 d 1 g 2 d 2 s 2 1 2 3 6 5 4
gate-drain, gate-source voltage ?50 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . storage temperature ?65 to 200 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation : per side a 250 mw . . . . . . . . . . . . . . . . . . . . . . . . total b 500 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2 mw/ c above 85 c b. derate 4 mw/ c above 85 c
2n3958 vishay siliconix www.vishay.com 8-2 document number: 70256 s-04031 ? rev. b, 04-jun-01
limits parameter symbol test conditions min typ a max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a, v ds = 0 v ? 50 ? 57 gate-source cutoff voltage v gs(off) v ds = 20 v, i d = 1 na ? 1.0 ? 2 ? 4.5 v saturation drain current b i dss v ds = 20 v, v gs = 0 v 0.5 3 5 ma v gs = ? 30 v, v ds = 0 v ? 10 ? 100 pa gate reverse current i gss t a = 150 c ? 20 ? 500 na v dg = 20 v, i d = 200 a ? 5 ? 50 pa gate operating current i g t a =125 c ? 0.8 ? 250 na v dg = 20 v, i d = 200 a ? 0.5 ? 1.5 ? 4 gate-source voltage v gs i d = 50 a ? 4.2 v gate-source forward voltage v gs(f) i g = 1 ma, v ds = 0 v 2 dynamic common-source forward transconductance g fs v ds = 20 v, v gs = 0 v 1 2.5 3 ms common-source output conductance g os f = 1 khz 2 35 s common-source input capacitance c iss 3 4 common-source reverse transfer capacitance c rss v ds = 20 v, v gs = 0 v f = 1 mhz 1 1.2 pf drain-gate capacitance c dg v dg = 10 v, i s = 0 , f = 1 mhz 1.5 equivalent input noise voltage e n v ds = 20 v, v gs = 0 v, f = 1 khz 9 nv ? hz noise figure nf v ds = 20 v, v gs = 0 v f = 100 hz, r g = 10 m 0.5 db matching differential gate-source voltage | v gs1 ? v gs2 | v dg = 20 v, i d = 200 a 15 25 mv gate-source voltage differential change with temperature | v gs1 ? v gs2 | t v dg = 20 v, i d = 200 a t a = ? 55 to 125 c 20 100 v/ c saturation drain current ratio i dss1 i dss2 v ds = 20 v, v gs = 0 v 0.85 0.97 1 transconductance ratio g fs1 g fs2 v ds = 20 v, i d = 200 a 0.85 0.97 1 differential output conductance | g os1 ? g os2 | v ds = 20 v, i d = 200 a f = 1 khz 0.1 s differential gate current | i g1 ? i g2 | v dg = 20 v, i d = 200 a t a = 125 c 0.1 10 na common mode rejection ratio c cmrr v dg = 10 to 20 v, i d = 200 a 100 db notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nqp b. pulse test: pw 300 s duty cycle 3%. c. this parameter not registered with jedec.
2n3958 vishay siliconix document number: 70256 s-04031 ? rev. b, 04-jun-01 www.vishay.com 8-3 5 0 ? 5 ? 4 ? 3 ? 2 ? 1 4 2 1 0 030 20 10 40 50 3 2.6 2.2 1 3 drain current and transconductance vs. gate-source cutoff voltage gate leakage current v gs(off) ? gate-source cutoff voltage (v) v dg ? drain-gate voltage (v) ? gate leakage i g 0.1 pa 10 pa 1 pa i dss @ v ds = 15 v, v gs = 0 v g fs @ v dg = 15 v, v gs = 0 v f = 1 khz g fs i dss i gss @ 125 c i gss @ 25 c t a = 125 c t a = 25 c 200 a 100 pa 1 na 10 na 100 na 5 01216 8 420 4 3 2 1 0 output characteristics output characteristics v ds ? drain-source voltage (v) v ds ? drain-source voltage (v) ? drain current (ma) i d ? drain current (ma) i d ? 0.2 v ? 0.4 v ? 0.6 v ? 0.3 v ? 0.8 v ? 1.0 v ? 1.2 v ? 1.4 v v gs(off) = ? 2 v v gs = 0 v 5 4 3 2 1 0 v gs = 0 v v gs(off) = ? 3 v 2 0 0.6 0.8 0.4 0.2 1 1.6 1.2 0.8 0.4 0 output characteristics output characteristics v ds ? drain-source voltage (v) v ds ? drain-source voltage (v) ? drain current (ma) i d ? drain current (ma) i d v gs(off) = ? 2 v v gs = 0 v 2.5 2.0 1.5 1.0 0.5 0 0 0.6 0.8 0.4 0.2 1 v gs = 0 v v gs(off) = ? 3 v ? 0.3 v ? 0.9 v ? 0.6 v ? 2.1 v ? 1.5 v ? 1.2 v ? 2.4 v ? 1.8 v 1.8 1.4 i g @ i d = 200 a 50 a ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v ? 1.0 v ? 1.2 v ? 1.4 v ? 1.6 v 01216 8 420 50 a ? 0.9 v ? 0.6 v ? 2.1 v ? 1.5 v ? 1.2 v ? 1.8 v ? 2.4 v i dss ? saturation drain current (ma) g fs ? forward transconductance (ms)
2n3958 vishay siliconix www.vishay.com 8-4 document number: 70256 s-04031 ? rev. b, 04-jun-01 0.01 0.1 1 10 1 0 ? 1.5 ? 1.0 ? 0.5 ? 2.0 ? 2.5 4 3 2 1 0 0.01 0.1 1 130 120 80 110 100 90 0.01 0.1 1 100 10 1 100 5 0.1 1 0.01 100 80 60 40 20 0 transfer characteristics gate-source differential voltage vs. drain current voltage differential with temperature vs. drain current common mode rejection ratio vs. drain current cmrr (db) a v ? voltage gain v gs ? gate-source voltage (v) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) t a = ? 55 c 125 c v gs(off) = ? 2 v v dg = 20 v v dg = 20 v t a = 25 c 5 ? 10 v v gs(off) = ? 3 v ? drain current (ma) i d circuit voltage gain vs. drain current on-resistance vs. drain current i d ? drain current (ma) 0.01 0.1 1 1 k 800 600 400 200 0 v gs(off) = ? 2 v a v g fs r l 1 r l g os r l 10 v i d assume v dd = 15 v, v ds = 5 v v ds = 20 v ? 2 v ? 3 v 25 c v dg = 10 ? 20 v (mv) v gs1 v gs2 ? v/ c () t v gs1 v gs2 ? v gs1 v gs2 ? v dg cmrr = 20 log r ds(on) ? drain-source on-resistance ( ? ) t a = 25 to 125 c t a = ? 55 to 25 c
2n3958 vishay siliconix document number: 70256 s-04031 ? rev. b, 04-jun-01 www.vishay.com 8-5 10 100 1 k 100 k 10 k 10 0 ? 12 ? 16 ? 20 ? 8 ? 4 8 6 4 2 0 v gs ? gate-source voltage (v) common-source input capacitance vs. gate-source voltage ? input capacitance (pf) c iss v ds = 0 v 5 v 20 v f = 1 mhz 5 0 ? 12 ? 20 ? 16 ? 8 ? 4 4 3 2 1 0 common-source reverse feedback capacitance vs. gate-source voltage ? reverse feedback capacitance (pf) c rss v gs ? gate-source voltage (v) v ds = 0 v 5 v 15 v f = 1 mhz 16 12 8 4 0 20 equivalent input noise voltage vs. frequency f ? frequency (hz) v ds = 20 v i d @ 200 ma v gs = 0 v 2.5 2.0 1.5 1.0 0.5 0 0.01 0.1 1 output conductance vs. drain current i d ? drain current (ma) t a = ? 55 c 125 c 0.01 0.1 1 2.5 2.0 1.5 1.0 0.5 0 common-source forward transconductance vs. drain current i d ? drain current (ma) t a = ? 55 c 125 c 1 k 0 ? 3 ? 5 ? 4 ? 2 ? 1 800 600 400 200 0 10 8 6 4 2 on-resistance and output conductance vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) r ds @ i d = 100 a, v gs = 0 v g os @ v ds = 20 v, v gs = 0 v, f = 1 khz r ds g os 25 c 25 c v gs(off) = ? 2 v v ds = 20 v f = 1 khz v gs(off) = ? 2 v v ds = 20 v f = 1 khz 15 v 20 v s) g os ? output conductance ( 0 e n ? noise voltage nv / hz g os ? output conductance ( s) r ds(on) ? drain-source on-resistance ( ? ) g fs ? forward transconductance (ms)
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