1/5 byv54v byv541v ? may 2000 - ed : 2e high efficiency fast recovery rectifier diodes n suited for smps n very low forward losses n negligible switching losses n high surge current capability n high avalanche energy capability n insulated : insulating voltage = 2500 v rms capacitance = 45 pf description features dual rectifier suited for switchmode power supply and high frequency dc to dc converters. packaged in isotop tm this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. isotop (plastic) symbol parameter value unit i f(rms) rms forward current per diode 100 a i f(av) average forward current d = 0.5 tc=90c per diode 50 a i fsm surge non repetitive forward current tp=10ms sinusoidal per diode 1000 a tstg tj storage and junction temperature range -40to+ 150 -40to+150 c c absolute maximum ratings symbol parameter byv54v / byv541v unit v rrm repetitive peak reverse voltage 200 v isotop is a trademark of stmicroelectronics. k2 a2 a1 k1 BYV541V-200 a2 k1 a1 k2 byv54v-200
byv54v / byv541v 2/5 symbol test conditions min. typ. max. unit i r * t j =25 cv r =v rrm 50 m a t j = 100c 5ma v f** t j = 125c i f =50a 0.85 v t j = 125c i f = 100 a 1.00 t j = 25c i f = 100 a 1.15 pulse test : * tp = 5 ms, duty cycl e<2% ** tp = 380 m s, duty cycl e<2% electrical characteristics (per diode) static characteristics symbol test conditions min. typ. max. unit trr t j = 25c i f = 0.5a i r =1a irr = 0.25a 40 ns i f =1a v r = 30v di f /dt = -50a/ m s60 tfr t j = 25c i f =1a v fr =1.1xv f tr=5ns 10 ns v fp t j = 25c i f =1a tr=5ns 1.5 v recovery characteristics symbol parameter value unit rth (j-c) junction to case per diode 1.2 c/w total 0.85 rth (c) coupling 0.1 c/w when the diodes 1 and 2 are used simultaneously : tj-tc (diode 1) = p(diode 1) x rth(j-c)(per diode) + p(diode 2) x rth(c) thermal resistance
byv54v / byv541v 3/5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 200 400 600 800 1000 t i m =tp/t tp i m(a) p=15w p=60w p=45w p=30w fig.2 : peak current versus form factor. tj=125 c o ifm(a) 1 10 100 500 vfm(v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 fig.3 : forward voltage drop versus forward current (maximum values). 0.1 1.0 0.2 0.5 zth(j-c) (tp. ) k= rth(j-c) =0.5 =0.2 =0.1 single pulse tp(s) t =tp/t tp 1.0e-03 1.0e-02 1.0e-01 1.0e+00 k fig.4 : relative variation of thermal impedance junction to case versus pulse duration. 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig.1 : average forward power dissipation versus average forward current. 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 t =tp/t tp =0.5 f(av)(a) i o tamb( c) rth(j-a)=rth(j-c) fig.6 : average current versus ambient temperature. (duty cycle : 0.5) 0.001 0.01 0.1 1 0 100 200 300 400 im t =0.5 t(s) i m(a) tc=25 c o tc=50 c o tc=90 c o fig.5 : non repetitive surge peak forward current versus overload duration.
byv54v / byv541v 4/5 110100 240 260 280 300 320 340 360 380 400 420 200 vr(v) f=1mhz tj=25 c o c(pf) fig.7 : junction capacitance versus reverse voltage applied (typical values). 110100 0 10 20 30 40 50 60 70 80 90 100 110 120 qrr(nc) 90%confidence if=if(av) tj=100 c o tj=25 c o dif/dt(a/us) fig.8 : recovery charges versus di f /dt. tj( c) qrr;irm[tj]/qrr;irm[tj=125 c] 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 irm qrr o o fig.10 : dynamic parameters versus junction temperature. 110100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 20 irm(a) tj=25 c o dif/dt(a/us) 90%confidence tj=100 c o if=if(av) fig.9 : peak reverse current versus dif/dt.
byv54v / byv541v 5/5 n marking : type number n cooling method : c n weight : 27 g n epoxy meets ul94, v0 package mechanical data isotop ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2000 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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