u1001 mimix broadband ? s 33.0-40.0 ghz gaas mmic transmitter has a small signal conversion gain of 8.0 db with a 30.0 db lo/rf isolation. the device has a pair of sub-harmonic mixers configured to form an image reject mixer which requires an lo at 15.5-21.5 ghz. this is followed by a two stage lna. the image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. the use of the sub- harmonic mixer makes the provision of the lo easier than for fundamental mixers at these frequencies. i and q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. this mmic uses mimix broadband ? s 0.15 m gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for millimeter-wave point-to-point radio, lmds, satcom and vsat applications. 33.0-40.0 ghz gaas mmic transmitter sub-harmonic transmitter low dc power consumption optional power bias 8.0 db conversion gain 30 db lo/rf isolation 100% on-wafer rf and dc testing 100% visual inspection to mil-std-883 method 2010 features general description electrical characteristics (ambient temperature t = 25 o c) absolute maximum ratings supply voltage (vd) supply current (id) gate bias voltage (vg) input power (if pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +6.0 vdc 70 ma +0.3 vdc +10 dbm -65 to +165 o c -55 to mttf table mttf table chip device layout (1) optional power bias vd=5.5v, id=60ma will typically yield improved p1db. (2) measured using constant current. (3) min/max limits over 33.0-39.5 ghz. frequency range (rf) upper side band frequency range (rf) lower side band frequency range (lo) frequency range (if) output return loss rf (s22) small signal conversion gain if/rf (s21) (usb/lsb) lo input drive (p lo ) image rejection (usb/lsb) isolation lo/rf @ lox2 input power for 1 db compression (p1db) drain bias voltage (vd) gate bias voltage (vg) supply current (id) (vd=3.0v, vg=-0.5v typical) parameter units ghz ghz ghz ghz db db dbm dbc db dbm vdc vdc ma min. 34.0 33.0 15.5 dc - 3.0/3.0 - 8.0/5.0 - - - -1.0 - typ. - - - - 12.0 8.0/8.0 +12.0 12.0/12.0 30.0 +3.0 +3.0 -0.5 30 max. 40.0 40.0 21.5 3.0 - - - - - - +5.5 0.0 60 (4) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. 4 1,2 page 1 of 8 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2005 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. 4 3 3 may 2005 - rev 13-may-05 u1001
page 2 of 8 XU1001 vd=3.0 v id=30 ma 0 10 20 30 40 50 36.00 36.50 37.00 37.50 38.00 38.50 39.00 39.50 40.00 frequency (ghz) lo/rf isolation (db) mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2005 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. XU1001 vd=3.0 v, id=30 ma, usb lo=+12.0 dbm, if=1.0 ghz @ -20.0 dbm, ~700 devices 0 2 4 6 8 10 12 14 35 36 37 38 39 40 41 rf frequency (ghz) conversion gain (db) +3sigma median mean -3sigma XU1001 vd=3.0 v, id=30 ma, lsb lo=+12.0 dbm, if=1.0 ghz @ -20.0 dbm, ~700 devices 0 2 4 6 8 10 12 14 35 36 37 38 39 40 41 rf frequency (ghz) conversion gain (db) max median mean -3sigma XU1001 vd=3.0 v, id=30 ma, usb lo=+12.0 dbm, if=1.0 ghz @ -20.0 dbm, ~700 devices -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 35 36 37 38 39 40 41 rf frequency (ghz) image rejection (dbc) max median mean -3sigma transmitter measurements XU1001 vd=3.0 v, id=30 ma, lsb lo=+12.0 dbm, if=1.0 ghz @ -20.0 dbm, ~700 devices -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 35 36 37 38 39 40 41 rf frequency (ghz) image rejection (dbc) +3sigma max median mean -3sigma u1001 33.0-40.0 ghz gaas mmic transmitter may 2005 - rev 13-may-05
page 3 of 8 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2005 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. transmitter measurements (cont.) u1001 33.0-40.0 ghz gaas mmic transmitter may 2005 - rev 13-may-05 XU1001 vd=3.0 v, id=30 ma, usb lo=+12.0 dbm, if=1.0 ghz @ -20.0 dbm, ~170 devices 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 rf frequency (ghz) conversion gain (db) max median mean -3sigma XU1001 vd=3.0 v, id=30 ma, lsb lo=+12.0 dbm, if=1.0 ghz @ -20.0 dbm, ~170 devices 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 rf frequency (ghz) conversion gain (db) max median mean -3sigma XU1001 vd=3.0 v, id=30 ma, usb lo=+12.0 dbm, if=1.0 ghz @ -20.0 dbm, ~170 devices -25 -20 -15 -10 -5 0 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 rf frequency (ghz) image rejection (dbc) max median mean -3sigma XU1001 vd=3.0 v, id=30 ma, lsb lo=+12.0 dbm, if=1.0 ghz @ -20.0 dbm, ~170 devices -25 -20 -15 -10 -5 0 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 rf frequency (ghz) image rejection (dbc) max median mean -3sigma XU1001 vd=3.0 v, id=30 ma, usb/lsb lo=+12.0 dbm, if=1.0 ghz @ -20.0 dbm, ~170 devices -35 -30 -25 -20 -15 -10 -5 0 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 rf frequency (ghz) rf return loss (db) max median mean min
page 4 of 8 bias arrangement (note: engineering designator is 38trx_01b2) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all bond pads are 0.100 x 0.100 (0.004 x 0.004). bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 4.491 mg. bond pad #1 (rf out) bond pad #2 (if2) bond pad #3 (if1) bond pad #4 (lo) bond pad #5 (vg) bond pad #6 (vd) mechanical drawing bypass capacitors - see app note [2] u1001 if2 if1 lo vg vd rf mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2005 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. 33.0-40.0 ghz gaas mmic transmitter may 2005 - rev 13-may-05 u1001 0.541 (0.021) 2 3 4 5 6 1 1.143 (0.045) 0.312 (0.012) 0.0 0.541 (0.021) 1.143 (0.045) 2.900 (0.114) 2.500 (0.098) 1.285 (0.051) 0.0 u1001 vd if2 if1 rf lo vg 2 3 4 5 6 1
page 5 of 8 app note [1] biasing - as shown in the bonding diagram, this device is operated with both stages in parallel. nominal bias is vd=3v, id=30ma. power bias may be as high as vd=5.5v, id=60ma. it is also recommended to use active biasing to keep the currents constant as the rf power and temperature vary; this gives the most reproducible results. depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. the gate of the phemt is controlled to maintain correct drain current and thus drain voltage. the typical gate voltage needed to do this is -0.5v. typically the gate is protected with silicon diodes to limit the applied voltage. also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. app note [2] bias arrangement - each dc pad (vd and vg) needs to have dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is also recommended. note: rf and if ports are ac coupled (dc blocks on chip). lo port is dc coupled (no dc block on chip.) mttf tables backplate temperature 55 deg celsius 75 deg celsius 95 deg celsius channel temperature 84 deg celsius 104 deg celsius 124 deg celsius fits 1.31e-03 2.09e-02 2.53e-01 mttf hours 7.63e+11 4.79e+10 3.95e+09 rth - 318.0 c/w - bias conditions: vd=3.0v, id=30 ma backplate temperature 55 deg celsius 75 deg celsius 95 deg celsius channel temperature 159 deg celsius 179 deg celsius 199 deg celsius fits 7.18e+00 4.79e+01 2.72e+02 mttf hours 1.39e+08 2.09e+07 3.67e+06 rth - 314.8 c/w - bias conditions: vd=5.5v, id=60 ma these numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricati ng foundry. u1001 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2005 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. 33.0-40.0 ghz gaas mmic transmitter may 2005 - rev 13-may-05
page 6 of 8 u1001 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2005 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. 33.0-40.0 ghz gaas mmic transmitter may 2005 - rev 13-may-05 app note [3] usb/lsb selection - usb lsb if1 if2 an alternate method of selection of usb or lsb: for lower side band operation (lsb): with if1 and if2 connected to the direct port (0o) and coupled port (90o) respectively as shown in the diagram, the lsb signal will reside on the input port. the isolated port must be loaded with 50 ohms. with if1 and if2 connected to the direct port (0o) and coupled port (90o) respectively as shown in the diagram, the usb signal will reside on the isolated port. the input port must be loaded with 50 ohms. for upper side band operation (usb): -90 o in phase combiner usb in phase combiner lsb -90 o if2 if1 if2 if1
page 7 of 8 typical application mimix broadband mmic-based 33.0-40.0 ghz transmitter block diagram (changing lo and if frequencies as required allows design to operate as high as 40 ghz) if in 2 ghz xp1005 XU1001 sideband reject rf out 37.0-39.5 ghz lo(+15dbm) 17.5-18.75 ghz (usb operation) 19.5-20.75 ghz (lsb operation) also see: multiplier selection guide at www.mimixbroadband.com for multipliers that can be used to drive the XU1001. u1001 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2005 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. 33.0-40.0 ghz gaas mmic transmitter may 2005 - rev 13-may-05
page 8 of 8 handling and assembly information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: do not ingest. do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are ablestick 84-1lmi or 84-1lmit cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280 c (note: gold germanium should be avoided). the work station temperature should be 310 c 10 c. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. 2 + - u1001 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2005 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. 33.0-40.0 ghz gaas mmic transmitter may 2005 - rev 13-may-05
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