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mil-s-19500/37e 16 september 2001 superseding mil-s-19500/37d 22 november 1971 military specification * semiconductor device, transistor, npn, silicon, low-power types 2n333, 2n335, 2n336, 2n333a, 2n335a, 2n336a, 2n333t2, 2n335t2, 2n336t2, 2n333lt2, 2n335lt2, 2n336lt2 2n333at2, 2n335at2, 2n336at2, 2n333alt2, 2n335alt2, and 2n336alt2, jan inactive for new design after 7 june 1999 this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the detail require ments for silicon, npn, low-power transistors. * 1.2 physical dimensions . see figure 1 (to-5 for isolated leads only) and figure 2 (to-205aa). * 1.3 maximum ratings . p t t a = 25 c v ebo t stg 2n333, t2, lt2 2n335, t2, lt2 2n336, t2, lt2 2n333a, t2, lt2 2n335a, t2, lt2 2n336a, t2, lt2 v ceo v cbo 2n333, t2, lt2 2n335, t2, lt2 2n336, t2, lt2 2n333a, t2, lt2 2n335a, t2, lt2 2n336a, t2, lt2 2n333, t2, lt2 2n335, t2, lt2 2n336, t2, lt2 2n333a, t2, lt2 2n335a, t2, lt2 2n336a, t2, lt2 mw (1) 150 mw (2) 500 v dc 45 v dc 45 v dc 1 v dc 4 c -65 to +175 c -65 to +175 (1) derate approximately 1 mw/c for t a between +25c and +175c. (2) derate approximately 3.33 mw/c for t a between +25c and +175c. * 1.4 primary electr ical characteristics . h fe v cb = 5 v dc, i e = -1 ma limits 2n333, t2, lt2 2n333a, t2, lt2 2n335, t2, lt2 2n335a, t2, lt2 2n336, t2, lt2 2n336a, t2, lt2 f hfb v cb = 5 v dc i e = -1 ma dc c obo v cb = 5 v dc i e = 0 ma dc 100khz f 1 mhz min max 18 44 37 90 76 270 mhz 2.5 pf 15 beneficial comments (recommendations, additions, deleti ons) and any pertinent data which may be of use in improving this document should be addressed to: de fense supply center, columbus, attn: dscc-vac, p.o. box 3990, columbus, oh 43216-5000, by using t he standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter. amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. the documentation and process conversi on measures necessary to comply with this document shall be completed by 16 december, 2001.
mil-s-19500/37e 2 2. applicable documents * 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. * 2.2 government documents . * 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devi ces, general specification for. standards department of defense mil-std-202 - test methods for el ectronic and electrical component parts. mil-std-750 - test methods for semiconductor devices. * (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.) * 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. no thing in this document, howev er, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500. * 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500.
mil-s-19500/37e 3 dimensions symbol inches millimeters notes min max min max cd .305 .335 7.75 8.51 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 7, 8 ll 1.500 1.750 38.10 44.45 7, 8 lu .016 .019 0.41 0.48 7, 8 l 1 .050 1.27 7, 8 l 2 .250 6.35 7, 8 q .050 1.27 5 tl .029 .045 0.74 1.14 3, 4 tw .028 .034 0.71 0.86 3 r .010 0.25 10 45 tp 45 tp 6 notes: 1. dimension are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods. 7. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 8. all leads electrically isolated from the case. 9. dimension r (radius) applies to both inside corners of tab. 10. in accordance with ansi y14.5m, diameters are equivalent to x symbology. * figure 1. physical dimensions of tr ansistors, types 2n333, 2n333a, 2n335, 2n335a, 2n336, and 2n336a (to-5) . to-5
mil-s-19500/37e 4 dimensions symbol inches millimeters notes min max min max cd .305 .335 7.75 8.51 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 7, 8 ll .500 .750 12.70 19.05 7, 8, 12 lu .016 .019 0.41 0.48 7, 8 l 1 .050 1.27 7, 8 l 2 .250 6.35 7, 8 q .050 1.27 5 tl .029 .045 0.74 1.14 3, 4 tw .028 .034 0.71 0.86 3 r .010 0.25 10 45 tp 45 tp 6 notes: 1. dimension are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true pos ition (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods. 7. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11. in accordance with ansi y14.5m, diameters are equivalent to x symbology. 12. for "l" suffix devices, dimension ll is 1. 50 (38.10 mm) minimum, 1. 75 (19.05 mm) maximum. * figure 2. physical dimensions of trans istors, types 2n333t2, 2n333at2, 2n335t2, 2n335at2, 2n336t2, 2n336at2 2n333lt2, 2n333alt2, 2n335lt2, 2n335alt2, 2n336lt2, and 2n336alt2 (to-205ad) . to-39
mil-s-19500/37e 5 * 3.4 interface and physical dimensions . interface and physical dimensi ons shall be as specified in mil-prf-19500, and on figure 1 and figure 2. 3.4.1 lead material and finish . lead material shall be kovar or alloy 52. lead finish shall be gold-plated. (leads may be tin-coated if specified in the contract or order, and this requirement s hall not be construed as adversely affecting the qualified product status of the device, or applicable jan marking, see 6.2). 3.4.1.1 selectivity of lead material . where choice of lead material (see 3.4. 1) is desired, it shall be specified in the contract or order (see 6.2). 3.4.2 terminal-lead length . terminal-lead length(s) other than that s pecified in figure 1 may be furnished when so stipulated under contract or order (see 6.2) where the devices covered herein are required directly for particular equipment-circuit installation or for automatic-assembly-t echnique programs. where other lead lengths are required and provided, it shall not be construed as adversely affecti ng the qualified product status of the device, or applicable jan marking. * 3.5 electrical perfo rmance characteristics . unless otherwise specified her ein, the electrical performance characteristics are as specified in 1.3, 1.4, and tables i, ii, and iii. * 3.6 electrical test requirements . the electrical test requirements shall be group a as specified herein. * 3.7 marking . marking shall be in accordance with mil-prf- 19500. at the option of the manufacturer, the following marking may be omitted from the body of the transistor. a. country of origin. b. manufacturer's identification. * 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. * 4. verification * 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. conformance inspection (see 4.3). * 4.2 qualification inspection . qualification inspection shall be in a ccordance with mil-prf-19500 and as specified in tables i, ii, and iii and herein. * 4.3 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500 and as specified in groups a, b, and c herein. 4.3.1 group a inspection . group a inspection shall consist of the inspections and tests specified in table i. 4.3.2 group b inspection . group b inspection shall consist of the inspections and tests specified in table ii. 4.3.3 group c inspection . group c inspection shall consist of the ins pections and tests specified in table iii. this inspection shall be conducted on the initial lot and thereafter every 6 months during production.
mil-s-19500/37e 6 4.3.4 groups b and c life-test samples . sample units that have been subjected to the group b 340-hour life test may be continued on test to 1,000 hours in order to satisfy gr oup c life-test requirements. these sample units shall be predesignated, and shall remain subjected to the gr oup c 1,000-hour acceptance evaluation after they have passed the group b 340-hour acceptance crit eria. the cumulative total of failures found during the 340-hour test and during the subsequent interval up to 1,000 hours shall be computed for the 1,000-hour acceptance criteria (see 4.3.3). 4.3.5 representative lot (groups b and c inspections) . at the option of the manufacturer, any of the types 2n333, 2n335, and 2n336 may be used for groups b and c inspections as representative of a lot containing the prototypes, provided the type so selected is in the lot. any of the types 2n333a, 2n335a, and 2n336a may be used for groups b and c inspections as representative of a lot containing the "a" types, provided the type so selected is in the lot. 4.4 methods of inspection . methods of inspection shall be as specif ied in the appropriate tables and as follows. 4.4.1 resistance to solvents . transistors shall be tested in accordance with method 215 of mil-std-202. the following details shall apply: a. all areas of the transistor body where marking has been applied shall be brushed. b. after subjection to the tests, there shall be no evidence of mechanical damage to the device and markings shall have remained legible.
mil-s-19500/37e 7 * table i. group a inspection . inspection mil-std-750 limits method details symbol min max unit subgroup 1 visual and mechanical examination 2071 subgroup 2 collector to emitter cutoff current 3041 bias condition d; v ce = 30 v dc i ceo 1.0 a dc collector to base cutoff current 3036 bias condition d; v cb = 30 v dc i cbo 0.5 a dc breakdown voltage, collector to base 3001 bias condition d; i c = 50 a dc bv cbo 45 v dc breakdown voltage, collector to emitter 3011 bias condition d; i c = 1 ma dc bv ceo 45 v dc breakdown voltage, collector to emitter 3011 bias condition d; i c = 100 a dc bv ceo 45 v dc breakdown voltage, emitter to base 3026 bias condition d bv ebo 2n333, 2n335, 2n336, t2, lt2 2n333a, 2n335a, 2n336a, t2, lt2 i e = 10 a dc i e = 100 a dc 1.0 4.0 v dc v dc collector to emitter voltage (saturated) i c = 5 ma dc v ce(sat) 2n333, 2n335, 2n336, t2, lt2 2n333a, 2n335a, 2n336a, t2, lt2 i b = 2.2 ma dc i b = 1.0 ma dc 1.0 1.0 v dc v dc forward-current transfer ratio 3076 v ce = 5 v dc; i c = 10 ma dc h fe 2n333, 2n333a, t2, lt2 2n335 2n335a, t2, lt2 2n336, 2n336a, t2, lt2 6 12 25 60 120 275 forward-current transfer ratio 3076 v ce = 5 v dc; i c = 100 a dc h fe 2n333, 2n333a, t2, lt2 2n335 2n335a, t2, lt2 2n336, 2n336a, t2, lt2 3 6 15
mil-s-19500/37e 8 * table i. group a inspection - continued. mil-std-750 limits inspection method details symbol min max unit subgroup 3 high-temperature operation: t a = +150 c collector to base cutoff current 3036 bias condition d; v cb = 30 v dc i cbo 25 a dc low-temperature operation: t a = -65 c small-signal short-circuit forward-current transfer ratio 3206 v cb = 5 v dc i e = -1 ma dc h fe 2n333, 2n333a, t2, lt2 2n335 2n335a, t2, lt2 2n336, 2n336a, t2, lt2 8 18 35 subgroup 4 small-signal open-circuit output admittance 3216 v cb = 5 v dc; i e = -1 ma dc h ob 0 1.2 mho small-signal open-circuit reverse-voltage transfer ratio 3211 v cb = 5 v dc; i e = -1 ma dc h rb 0 1x10 -3 small-signal open-circuit input impedance 2n333, 2n333a 2n335, 2n335a 2n336, 2n336a 3201 v cb = 5 v dc; i e = -1 ma dc h ib 30 80 ohms *for t2, and lt2 only. 20 80 ohms small-signal open-circuit forward-current transfer ratio 3206 v cb = 5 v dc; i e = -1 ma dc h fe 2n333, 2n333a, t2, lt2 2n335, 2n335a, t2, lt2 2n336, 2n336a, t2, lt2 18 37 76 44 90 270 magnitude of common- emitter small-signal short- circuit forward-current transfer ratio 3306 v ce = 5 v dc; i c = 1 ma dc; f = 2.5 mhz ? h fe ? 2n333, t2, lt2 2n335, t2, lt2 2n336, t2, lt2 2n333a, t2, lt2 2n335a, t2, lt2 2n336a, t2, lt2 40 60 120 30 30 30
mil-s-19500/37e 9 * table i. group a inspection - continued. mil-std-750 limits inspection method details symbol min max unit subgroup 4 magnitude of common- emitter small-signal short- circuit forward-current transfer ratio 3306 v ce = 5 v dc; i c = 1 ma dc; f = 10 mhz ? h fe ? 2n333, t2, lt2 2n335, t2, lt2 2n336, t2, lt2 2n333a, t2, lt2 2n335a, t2, lt2 2n336a, t2, lt2 13 15 17 13 13 13 small-signal short-circuit forward-current transfer- ratio, cutoff frequency 3301 v cb = 5 v dc; i e = -1 ma dc f hfb 2.5 mhz subgroup 5 open circuit output capacitance 3236 v cb = 5 v dc; v sig = 0.1 vac; 100 khz f 1mhz c obo 15 pf noise figure 3246 v cb = 5 v dc; i e = -1 ma dc; f = 1khz; r g = 500 ohms nf 30 db
mil-s-19500/37e 10 * table ii. group b inspection . mil-std-750 limits inspection method details symbol min max unit subgroup 1 physical dimensions 2066 (see figure 1) subgroup 2 solderability 2026 thermal shock (temperature cycling) 1051 test condition c, except: 10 cycles; exposure time at temperature extremes = 15 minutes (minimum); and in step 3, t max = +175 c. thermal shock (glass strain) 1056 test condition a moisture resistance 1021 end points: collector to base cutoff current 3036 bias condition d; v cb = 30 v dc i cbo 0.5 a dc small-signal short-circuit forward-current transfer ratio 3206 v cb = 5 v dc; i e = -1 ma dc h fe 2n333, 2n333a, t2, lt2 2n335 2n335a, t2, lt2 2n336, 2n336a, t2, lt2 18 37 76 44 90 270 subgroup 3 shock (2n333, 2n335, 2n336, t2, lt2) 2016 nonoperating; 500 g; 1 ms; 5 blows in each orientation x 1 , y 1 , y 2 , and z 1 . shock (2n333a, 2n335a, 2n336a, t2, lt2) 2016 nonoperating; 1500 g; approximately 0.5 ms; 5 blows in each orientation x 1 , y 1 , y 2 , and z 1 . vibration, variable frequency 2056 nonoperating constant acceleration 2006 20,000 g in each orientation x 1 , y 1 , y 2 , and z 1 end points (same as subgroup 2)
mil-s-19500/37e 11 * table ii. group b inspection - continued. mil-std-750 limits inspection method details symbol min max unit subgroup 4 terminal strength (lead fatigue) 2036 test condition e end points: hermetic seal 1071 test conditions g or h for the fine leaks; test conditions a, c, d, or f for gross leaks. 1x10 -7 atm cc/sec subgroup 5 alt atmosphere (corrosion) 1041 subgroup 6 high temperature life (nonoperating) 1032 time = 340 hours (see 4.3.4) 2n333, 2n335, 2n336, t2, lt2 2n333a, 2n335a, 2n336a, t2, lt2 t tg = +175 c t tg = +200 c end points: collector to base cutoff current 3036 bias condition d; v cb = 30 v dc i cbo 1.0 a dc breakdown voltage, collector to base 3001 bias condition d; i c = 50 a dc bv cbo 40 v dc forward-current transfer ratio 3076 v ce = 5 v dc; i c = 10 ma dc ? h fe 25 percent change from initial recorded value small-signal short-circuit forward- current transfer ratio 3206 v cb = 5 v dc; i e = -1 ma dc h fe 2n333, 2n333a, t2, lt2 2n335 2n335a, t2, lt2 2n336, 2n336a, t2, lt2 15 30 60 subgroup 7 steady-state operation life (2n333, 2n335, 2n336, t2, lt2) 1027 t a = +125 c; v cb = 20 v dc; p = 50 mw; time = 340 hours (see 4.3.4) end points: (same as subgroup 6) steady-state operation life (2n333a, 2n335a, 2n336a, t2, lt2) 1027 t a = +25 c; v cb = 30 v dc; p = 500 mw; time = 340 hours (see 4.3.4) end points: (same as subgroup 6)
mil-s-19500/37e 12 * table iii. group c inspection . mil-std-750 limits inspection method details symbol min max unit subgroup 1 resistance to solvents mil-std-202, method 215 (see4.4.1) subgroup 2 high temperature life (nonoperating) 1031 (see 4.3.4) 2n333, 2n335, 2n336, t2, lt2 2n333a, 2n335a, 2n336a, t2, lt2 t tsg = +175 c t tsg = +200 c end points: (same as subgroup 6 of group b) subgroup 3 steady-state operation life (2n333, 2n335, 2n336, t2, lt2) 1026 t a = +125 c; v cb = 20 v dc; p = 50 mw; (see 4.3.4) end points: (same as subgroup 6 of group b) steady-state operation life (2n333a, 2n335a, 2n336a, t2, lt2) 1026 t a = +25 c; v cb = 30 v dc; p = 500 mw; (see 4.3.4) end points: (same as subgroup 6 of group b)
mil-s-19500/37e 13 * 5. packaging * 5.1 packaging . for acquisition purposes, the packaging requirement s shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control point's packaging ac tivity within the military department or defense agency, or within the military department's system command. packaging data retrieval is available from the managing military department's or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes * (this section contains information of a general or ex planatory nature that may be hel pful, but is not mandatory.) 6.1 intended use . the notes specified in mil-prf-19500 are applicable to this specification. * 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2). c. packaging requirements (see 5.1). d. lead finish if other than gold-plated (see 3.4.1). e. lead material (see 3.4.1.1). f. terminal-lead length if other than as specified on figure 1 (see 3.4.2). * 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for inclus ion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualific ation of products may be obtained from defense supply center, columbus, attn: dscc/ vqe, p.o. box 3990, columbus, oh 43216-5000. * 6.4 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - nw air force - 11 (project 5961-2505) dla - cc review activities: army - ar, mi navy - as, mc air force - 19
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a r eply within 30 days from receipt of the form. note: this form may not be used to reques t copies of documents, nor to request waiv ers, or clarificati on of requirements on current contracts. comments submitted on th is form do not constitute or imply author ization to waive any portion of the refere nced document(s) or to amend c ontractual requirements. i recommend a change: 1. document number mil-s-19500/37e 2. document date 16 september 2001 3. document title semiconductor device, transistor, npn, silicon, low-power, types 2n333, 2n335, 2n336, 2n333a, 2n335a, 2n336a, 2n333t2, 2n335t2, 2n336t 2, 2n333lt2, 2n335lt2, 2n336lt2, 2n333at2, 2n335at2, 2n336at2, 2n333alt2, 2n335a lt2, and 2n336alt2 jan 4. nature of change (identify paragraph number and include propos ed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil c. address defense supply center columbus attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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