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" for more information + ! " amd flash memory quick reference guide february 2003 edition publication number 21531 revision g amendment 0 issue date february 2003
one amd place p. o. b o x 3 4 5 3 sunnyvale california 94088-3453, usa tel: 408-732-2400 800-538-8450 twx: 910-339-9280 telex: 34-6306 technical support usa & canada: 800-222-9323 or 408-749-5703 usa & canada pc microprocessor: 408-749-3060 usa & canada email: hw.support@amd.com latin america email: spanish.support@amd.com argentina: 001-800-200-1111, after tone 800-859-4478 chile: 800-532-853 mexico: 95-800-222-9323 europe & uk: +44-0-1276-803299 fax: +44-0-1276-803298 france: 0800-908-621 germany: 089-450-53199 italy: 800-877224 europe email: euro.tech@amd.com far east fax: 852-2956-3996 japan fax: 81-3-3346-7848 literature ordering usa & canada: 800-222-9323 latin america email: revendedor@amd.com europe email: euro.lit@amd.com far east fax: 852-2956-0588 japan fax: 03-3346-9628 www.amd.com amd, the amd logo, mirrorbit, ultranand, versatileio, and combinations thereof are trademarks of advanced micro devices, inc. product names used in this publication are for identification purpo ses only and may be trademarks of their respective companies . ? 2003 advanced micro devices, inc. printed in usa amz-10m-02/03-0 21531G amd flash memory quick reference guide
chip scale packaging options * densities greater than 32 mb may use additional balls for stability. packaging options socket vendors package features benefits kgd (known good die) http://www.amd.com/ flash/kgd existing amd flash fully tested at temperature and speed. same quality and reliability as packaged devices. both 5.0 volt-only and 3.0 volt-only products in x8 or x8/x16 configuration. a small form factor ideal for use in multi- chip modules or hybrids. fits small form-factor applications. fine-pitch ball grid array fortified ball grid array http://www.amd.com/ flash/bga chip-scale packages. fine pitch bga has 0.8 mm pitch; fortified bga has 1.0 mm pitch same input/output ball footprint for a variety of densities, regardless of package size.* no manufacturing or handling equipment changes required if the die size is changed. fbga chip-scale packaging requires only about 1/3 the board space of the tsop package for densities up to 16 mb. no board layout changes required to migrate to a higher or lower density memory.* lowest cost chip-scale package. pdip so tsop plcc kgd (16mb) fbga (16mb) for more information on sockets, contact the following vendors: yamaichi electronics 2235 zanker road san jose, ca 95131 (408) 456-0797 fax (408) 456-0799 wells electronics, inc. 226 airport parkway, suite 300 san jose, ca 95110 (408) 452-4290 fax (408) 452-4291 loranger intl. corp. 3000 scott boulevard, suite 201 san clara, ca 95054 (408) 727-4234 fax (408) 727-5842 email: loranger@inow.com amd flash memory web site contents go to http://www.amd.com/flash. the amd web site contains a wealth of information relati ng to amd flash memory. the flash memory portion of the site is divided into three subsections : product information, flash applications, and technical resources, and can be accessed from the tabs on the main horizontal m enu. each subsection has its own hub page and menu from which information is easily found. the product information section allows navigation to individual products by choosing an operating voltage, architecture, or density. t he individual product pages have direct links to application notes, and software simulation models. the flash applications section leads to information on four market segments that have a significant number of flash memory applications. a link to reference designs that feature amd flash is also provided. the technical resources section contains data sheets, application notes, white papers, flash memory-specific software, and info rmation on amd programming services. supporting documentation on packaging and known good die (kgd) products are also available. information on obsolete products such as eproms and 12 v flash is archived within this section. the following table highlights some of the web site features that are currently available. subject description link from flash memory home page go to http://www.amd.com/flash mirrorbit an entire section devoted to mirrorbit products and technology: data sheets, white paper, multimedia demo, application notes, and software simulation models. http://www.amd.com/flash/mirrorbit fusionflash catalog a collection of web pages describing companies that work with amd to support amd flash memory products. some areas of support include sockets, programming equipment, and software. click on ?third party support.? then click on the desired topic link. technical documentation a list of online publications in pdf format that includes data sheets, application notes, technical backgrounds, and other general information pieces. viewing and printing pdfs require adobe acrobat reader. http://www.amd.com/flash/docs data sheet programmer supplements documents in pdf format that describe, for flash devices that lack in-system sector protection and unprotection capability, the algorithms that must be performed using external programming equipment. requires contacting amd or an amd representative for access. applications-focused web pages web pages designed to explain the features and benefits of amd flash memory that are ideal for a specific market segment. examples of segments include portable, networking/telecommunications, and automotive applications. http://www.amd.com/flash/applications flash memory device drivers source code for integration into customer code that handles the operation of the flash device. two types of drivers are available: a basic version that controls the operation of the flash?read, erase, program; the other version controls the flash device and additionally queries cfi-capable (common flash interface) flash for device information http://www.amd.com/flash/drivers cad models files that include parameters and specifications describing amd flash memory. files are intended for use with circuit design simulation software. http://www.amd.com/flash/models 2 17 amd flash memory quick reference guide
3 3.0 volt-only mirrorbit tm flash memory density ordering part number 1 voltage range page mode byte/word count x bus width additional features, sector size/count 5 device number sector 2 access times (ns) 3 package (pin/ball count) 4 temp. range v cc v io 16 mbit am29lv017m uniform 70r, 90r, 120r e (40), f (40), wc (48) c, i 3.0?3.6 na n 2 m x 8 cfi. sector size (kb): (32)64 70, 90, 120 2.7?3.6 16 mbit am29lv116m t, b 70r, 90r, 120r e (40), f (40) c, i 3.0?3.6 na n 2 m x 8 cfi. sector sizes (kb): 16,(2)8,32,(15)64 70, 90, 120 2.7?3.6 16 mbit am29lv160m t, b 70r, 90r, 120r e (48), f (48), wa (48), pc (64) c, i, e 3.0?3.6 na n 1 m x 16, 2 m x 8 cfi. sector sizes (kb): 16,(2)8,32,(15)64 70, 90, 120 2.7?3.6 32 mbit am29lv033m u 90r e (40), f (40), wc (48) i 3.0?3.6 3.0?3.6 y 4 m x 8 cfi. sector size (kb): (64)64 101r 2.7?3.6 112r, 120r 1.65?3.6 101 2.7?3.6 2.7?3.6 112, 120 1.65?3.6 32 mbit am29lv320m h, l 90r e (56), f (56), pc (64) i 3.0?3.6 3.0?3.6 y 2 m x 16, 4 m x 8 secsi sector, wp#/acc, cfi. sector size (kb): (64)64 101r 2.7?3.6 112r, 120r 1.65?3.6 101 2.7?3.6 2.7?3.6 112, 120 1.65?3.6 t, b 90r, 100r, 110r, 120r e (48), wc (48), pc (64) i 3.0?3.6 na secsi sector, wp#/acc, cfi. sector sizes (kb): (8)8,(63)64 100, 110, 120 2.7?3.6 64 mbit am29lv065m u 90r 6 e (48), f (48), wh (63) i 3.0?3.6 3.0?3.6 y 8 m x 8 secsi sector, acc, cfi. sector size (kb): (128)64 101r 2.7?3.6 112r, 120r 1.65?3.6 101 2.7?3.6 2.7?3.6 112, 120 1.65?3.6 64 mbit am29lv640m u 90r 6 wh (63), pc (64) i 3.0?3.6 3.0?3.6 y4 m x 16 secsi sector, acc, cfi. sector size (kw): (128)32 101r 2.7?3.6 112r, 120r 1.65?3.6 101 2.7?3.6 2.7?3.6 112, 120 1.65?3.6 h, l 90r 6 e (56), f (56), pc (64) i 3.0?3.6 3.0?3.6 y 4 m x 16, 8 m x 8 secsi sector, wp#/acc, cfi. sector size (kb): (128)64 101r 2.7?3.6 112r, 120r 1.65?3.6 101 2.7?3.6 2.7?3.6 112, 120 1.65?3.6 t, b 90r 6 , 100r, 110r, 120r e (48), wh (63), pc (64) i 3.0?3.6 na y 4 m x 16, 8 m x 8 secsi sector, wp#/acc, cfi. sector sizes (kb): (8)8,(127)64 100, 110, 120 2.7?3.6 64 mbit am29lv641m h, l 90r 6 e (48), f (48) i 3.0?3.6 3.0?3.6 y 4 m x 16 secsi sector, wp#, acc, cfi. sector size (kw): (128)32 101r 2.7?3.6 112r, 120r 1.65?3.6 101 2.7?3.6 2.7?3.6 112, 120 1.65?3.6 notes: 1. contact an amd representative for availability. see ordering part number designators table for additional package and product details. some features on mirrorbit products may be pending, and specifications may be subject to change. 2. sector architecture: u = uniform, t = top boot, b = bottom boot, h = wp# protects highest addressed sector, l = wp# protects lowest addressed sector. lv017m sector designator not included in part number. 3. special access time designators are as follows: 90 = 90 ns; 101 = 100 ns; 112 = 110 ns; 120 = 120 ns. all other access times are as stated in part number. an ?r? indicates regulated v cc voltage range. 4. pin/ball count provided in parenthesis is for information only, and is not included in the actual ordering part number. 5. features: wp# = write protect input. acc = programming acceleration input. secsi sector = secured silicon (unique/random id). cfi = comm on flash interface. sector size/count: sector counts are given in parentheses. kw = kilowords, kb = kilobytes. 6. volume production of this speed option may not be immediately available. contact amd for further information.
4 notes: 1. contact an amd representative for availability. see ordering part number designators table and individual data sheets for det ails. some features on mirrorbit products may be pending, and specifications may be subject to change. products listed in italics have not yet been introduced. 2. sector architecture: u = uniform, t = top boot, b = bottom boot, h = wp# protects highest addressed sector, l = wp# protects lowest addressed sector. 3. special access time designators are as follows: 90, 93 = 90 ns; 101, 103 = 100 ns; 112, 113 = 110 ns; 120, 123 = 120 ns. all other access times are as stated in part number. an ?r? indicates regulated v cc voltage range. designators ending in ?3? indicate 3 v v io . designators ending in ?5? indicate 1.65?1.95 v v io 4. pin/ball count provided in parenthesis is for information only, and is not included in the actual ordering part number. 5. features: wp# = write protect input. acc = programming acceleration input. secsi sector = secured silicon (unique/random id). cfi = comm on flash interface. sector size/count: sector counts are given in parentheses. kw = kilowords, kb = kilobytes. 6. volume production of this speed option may not be immediately available. contact amd for further information. mirrorbit drop-in compatibility notes: 1. sector architecture differences. 2. 48-pin to 56-pin tsop migration. 3. mirrorbit supports v io ; dl640 does not support v io . 128 mbit am29lv6402m h, l 100r ph (80) i 3.0?3.6 2.7?3.6 y 4 m x 32, 8 m x 16 two am29lv640m devices in a single package. secsi sector, acc, cfi, versatileio. sector size (kw): (128)64 110r 1.65?3.6 128 mbit am29lv128m h, l 103r 6 e (56), f (56), pc (64) i 3.0?3.6 2.7?3.6 y 8 m x 16, 16 m x 8 secsi sector, wp#/acc, cfi. sector size (kw): (256)32 113r, 123r 1.65?3.6 103 2.7?3.6 2.7?3.6 113, 123 1.65?3.6 256 mbit am29lv1282m h, l 110r ph (80) i 3.0?3.6 2.7?3.6 y 8 m x 32, 16 m x 16 two am29lv128m devices in a single package. secsi sector, acc, cfi, versatileio. sector size (kb): (256)64 120r 1.65?3.6 256 mbit am29lv256m h, l 103r 6 e (56), f (56), pg (64) i 3.0?3.6 2.7?3.6 y 16 m x 16, 32 m x 8 wp#/acc, cfi. sector size (kw): (512)32 113r, 123r 1.65?3.6 103 6 2.7?3.6 2.7?3.6 113, 123 1.65?3.6 512 mbit am29lv2562m h, l 120r pi (80) i 2.7?3.6 1.65?3.6 y 16 m x 32, 32 m x 16 two am29lv256m devices in a single package. secsi sector, acc, cfi, versatileio. sector size (kw): (512)64 512 mbit am29lv512n h, l 80, 90 e (56), f (56), pg (64) i 2.7?3.6 2.7?3.6 y 32 m x 16, 64 m x 8 wp#/acc, cfi. sector size (kw): (512)64 85, 95 1.65?1.95 density mirrorbit device tsop bga (fine-pitch/fortified) conventional flash device 16 mbit am29lv160m e (48), f (48) wc (48) am29lv160d, am29dl16xd 1 pc (64) am29dl16xd 1 am29lv017m e (40), f (40) wc (48) am29lv017d am29lv116m e (40), f(40) am29lv116d 32 mbit am29lv320mt/b e (48) wm (48) am29lv320d, am29dl32xd/g pc (64) am29dl32xd/g am29lv320mh/l e (56), f (56) am29lv320d 1 pc (64) am29dl323d/g 1 am29lv033m e (40), f (40) wc (48) am29lv033c 64 mbit am29lv640mu wh (63), pc (64) am29lv640du am29lv640mt/b e (48) wh (63), pc (64) am29dl640d/g am29lv640mh/l e (56), f (56) pc (64) am29dl640g 1,2,3 , am29lv640d/h/l am29lv641mh/l e (48), f (48) am29lv641dh/l am29lv065mu e (48), f (48) wh (63) am29lv065d 128 mbit am29lv128m pc (64) am29lv642d 3.0 volt-only mirrorbit tm flash memory (continued) density ordering part number 1 voltage range page mode byte/word count x bus width additional features, sector size/count 5 device number sector 2 access times (ns) 3 package (pin/ball count) 4 temp. range v cc v io
5 1.8 volt-only flash memory architecture 2 density ordering part number 1 voltage range byte/word count x bus width additional features, sector size/count 5 device number sector 3 access times (ns) package (pin/ball count) 4 temp. range v cc v io sim. r/w + burst mode 32 mbit am29bds320g t, b d3, d4, d8, d9 (13.5) 7 vm (64) i 1.65? 1.95 1.65? 1.95 4 m x 16 wp#, acc, cfi. separate address and data buses. bank split 4 x 16mb. banks a?d (kw): [(4)8,(15)32] [(16)32] [(16)32] [(15)32,(4)8] c8, c9, c3, c4 (20) 7 2.7? 3.15 64 mbit am29bds640g t, b d3, d4, d8, d9 (13.5) 7 ws (80) i 1.65? 1.95 1.65? 1.95 4 m x 16 wp#, acc, cfi. separate address and data buses. bank split 4 x 16mb. banks a?d (kw): [(4)8,(31)32] [(32)32] [(32)32] [(4)8,(31)32] c8, c9, c3, c4 (20) 7 2.7? 3.15 64 mbit am29bds643g t 7g (20), 7m (13.5), 5k (11) 8 va (44) i 1.7? 1.9 1.7? 1.9 4 m x 16 wp#. multiplexed address/data bus. bank split 4 x 16mb. banks a?d (kw): [(8)4,(31)32] [(32)32] [(32)32] [(8)4,(31)32] 128 mbit am29bds128h t, b d3, d4, d8, d9 (13.5) 7 ws (80) i 1.65? 1.95 1.65? 1.95 4 m x 16 wp#, acc, cfi, advanced sector protection. separate address and data buses. bank split 4 x 16mb. banks a?d (kw): [(4)8,(31)32] [(32)32] [(32)32] [(4)8,(31)32] c8, c9, c3, c4 (20) 7 2.7? 3.15 56-pin tsop 48/63 ball fine-pitch bga 64-ball fortified bga mirrorbit package migration 48-pin tsop 32 mb 16 mb x8/x16, x16 only x8 only 256 mb 512 mb 64 mb 128 mb am29lv160mt/b am29lv320mt/b am29lv320mh/l 1 3 2 am29lv160mt/b am29lv320mt/b am29lv640mt/b am29lv640mh/l am29lv640mt/b am29lv017m am29lv116m (4) am29lv033mu am29lv065mu notes: t/b = top or bottom boot sector. h/l = uniform sector with highest or lowest addressed sector wp# protection. u = uniform sec tors without wp# protection. (1) 48- to 56-pin migration. (2) mirrorbit products in these packages will include 1 gbit devices. (3) 48- to 63-ball migra tion. (4) am29lv116m has boot sectors; all other devices shown have uniform sectors. (5) 40- to 48-pin migration. 2 5 am29lv017m am29lv033mu am29lv065mu am29lv128mh/l am29lv256mh/l am29lv512nh/l am29lv128mh/l am29lv256mh/l am29lv512nh/l am29lv160mt/b am29lv320mt/b am29lv640mt/b am29lv320mh/l am29lv640mh/l 40/48-pin tsop 48/63-ball fine-pitch bga notes: 1. contact amd or an amd representative for availability. see ordering part number designators table for additional package and product details. products listed in italics are not yet introduced. 2. sim r/w = simultaneous read/write feature: read from one bank while writing to any other bank. 3. sector architecture: u = uniform, t = top boot, b = bottom boot. 4. pin/ball count provided in parenthesis is for information only, and is not included in the actual ordering part number. 5. features: wp# = write protect input. acc = programming acceleration input. secsi sector = secured silicon (unique/random id). cfi = comm on flash interface. bank & sector size/count: bank contents are given in square brackets. sector counts are given in parentheses. kw = kilowords, kb = kilobytes, mb = megabits. 6. bds323d asynchronous access time is given first (11a = 110 ns, 40 mhz clock speed), followed by the burst mode access time in parentheses. 7. bds320g/640g/128h clock rate/asynchronous access: d = 54 mhz/70 ns, c = 40 mhz/90 ns. voltage/handshaking type: 3 = 3 v v io , reduced wait state handshaking; 4 = 3 v v io , standard handshaking; 8 = 1.8 v v io , reduced wait state handshaking; 9 = 1.8 v v io , standard handshaking. 8. bds643g clock rate/handshaking enabled: k = 66 mhz/yes; m = 54 mhz/yes; g = 40 mhz/yes. asynchronous access: 7 = 70 ns; 5 = 5 5 ns.
6 2.5 volt-only flash memory 3.0 volt-only flash memory sim. r/w + page mode 32 mbit am29pds322d t, b 10 (40), 12 (45) 6 wm (48) i 1.8?2.2 na 2 m x 16 secsi sector, wp#/acc, cfi. bank split 4/28mb. banks 1?2 (kw): [(8)4,(7)32] [(56)32] sim. r/w 16 mbit am29ds163d t, b 100, 120 wa (48) i, e 1.8?2.2 na 2 m x 8, 1 m x 16 secsi sector, wp#/acc, cfi. bank split 4/12 mb. banks 1?2 (kb): [(8)8,(7)64] [(24)64] 32 mbit am29ds323d t, b 110, 120 e (48), wm (48) i 1.8?2.2 na 4 m x 8, 2 m x 16 secsi sector, wp#/acc, cfi. bank split 8/24 mb. banks 1?2 (kb): [(8)8,(15)64] [(48)64] 32 mbit am29ds320g t, b 70, 90, 120 e (48), wm (48) i, e 1.8?2.2 na 4 m x 8, 2 m x 16 secsi sector, wp#/acc, cfi. four banks, split 4/12/12/4 mb. sector sizes (kb): [(8)8,(7)64] [(24)64] [(24)64] [(8)64] 32 mbit am29ds322g, am29ds323g, am29ds324g t, b 70, 90, 120 e (48), wm (48) i 1.8?2.2 na 4 m x 8, 2 m x 16 secsi sector, wp#/acc, cfi. four banks, split 4/12/12/4 mb. sector sizes (kb): [(8)8,(7)64] [(24)64] [(24)64] [(8)64] conventional 8 mbit am29sl400c t, b 100r e (48), wb (48) c, i 1.75?2.2 na 512 k x 8, 256 k x 16 sector sizes (kb): 16,8,8,32,(7)64 110, 120, 150 1.65?2.2 8 mbit am29sl800d t, b 100, 120, 150 e (48), f (48), wc (48) c, i 1.65?2.2 na 1 m x 8, 512 k x 16 sector sizes (kb): 16,8,8,32,(15)64 16 mbit am29sl160c t, b 90, 100, 120, 150 e (48), wc (48) c, i, e 1.8?2.2 na 2 m x 8, 1 m x 16 wp#/acc, cfi. sector sizes (kb): (8)8,(31)64 architecture 2 density ordering part number 1 voltage supply byte/word count x bus width additional features, sector size/count 5 device number sector 3 access times (ns), (clock speed) package (pin/ball count) 4 temp. range sim. r/w + burst mode 16 mbit am29bdd160g t, b 7 54d, 65d (66 mhz), 64c (56 mhz), 65a (40 mhz) 8 k (80), pb (80) i, e 2.3?2.75 v 1 m x 16, 512 k x 32 secsi sector, versatileio, wp#, acc, cfi, advanced sector protection, bank split 4/12 mb or 12/4 mb. 7 architecture 2 density ordering part number 1 voltage range byte/word count x bus width additional features, sector size/count 5 device number sector 3 access times (ns) package (pin/ball count) 4 temp. range v cc v io sim. r/w + page mode 64 mbit am29pdl640g t, b 9 73 (25), 83 (30) 10 wh (63), ws (80) i 2.7?3.1 2.7?3.6 4 m x 16 advanced sector protection, wp#/acc, cfi, versatileio. bank split 16/48/48/16mb. banks 1?4 (kw): [(8)4,(15)32] [(48)32] [(48)32] [(15)32,(8)4] 98 (30) 10 2.7?3.1 1.65?1.95 128 mbit am29pdl127h t, b 9 53 (20), 63, 83 (30) 10 vk (80), pc (64) i 2.7?3.6 2.7?3.6 8 m x 16 two pdl640h devices in a single package with single ce# input. advanced sector protection, wp#/acc, cfi. bank split 16/48/48/16mb. banks 1?4 (kw): [(8)4,(31)32] [(96)32] [(96)32] [(31)32,(8)4] 68, 88 (30) 10 2.7?3.6 1.65?1.95 128 mbit am29pdl128g t, b 9 70r (25) 10 pe (80) i 3.0?3.6 na 8 m x 16, 4 m x 32 advanced sector protection, wp#/acc, cfi. bank split 16/48/48/16mb. banks 1?4 (kw): [(8)4,(31)32] [(96)32] [(96)32] [(31)32,(8)4] 70 (25), 80 (30) 10 i, e 2.7?3.6 na 128 mbit am29pdl129h t, b 9 53 (20), 63, 83 (30) 10 vk (80) i 2.7?3.6 2.7?3.6 8 m x 16 two pdl640h devices in a single package with dual ce# inputs. advanced sector protection, wp#/acc, cfi. bank split 16/48/48/16mb. banks 1?4 (kw): [(8)4,(31)32] [(96)32] [(96)32] [(31)32,(8)4] 68, 88 (30) 10 2.7?3.6 1.65?1.95 1.8 volt-only flash memory (continued) architecture 2 density ordering part number 1 voltage range byte/word count x bus width additional features, sector size/count 5 device number sector 3 access times (ns) package (pin/ball count) 4 temp. range v cc v io notes: 1. contact amd or an amd representative for availability. see ordering part number designators table and individual data sheets for details. products listed in italics are not yet introduced. 2. sim r/w = simultaneous read/write feature: read from one bank while writing to any other bank. 3. sector architecture: u = uniform, t = top boot, b = bottom boot. 4. pin/ball count provided in parenthesis is for information only, and is not included in the actual ordering part number. 5. features: wp# = write protect input. acc = programming acceleration input. secsi sector = secured silicon (unique/random id). cfi = comm on flash interface. bank & sector size/count: bank contents are given in square brackets. sector counts are given in parentheses. kw = kilowords, kb = kilobytes, mb = megabits. 6. pds322d asynchronous access time is given first (10 = 100 ns, 12 = 120 ns), followed by the page mode access time in parenthe ses. 7. bdd160g: t = 4/12 mbit bank split, banks 1/2 (kw): [(8)4,(7)32] [(8)4,(23)32]; b = 12/4mbit bank split, banks 1/2 (kw): [(8)4 ,(23)32] [(8)4,(7)32] 8. bdd160g access times are for maximum initial burst read or asynchronous read operations. 9. this product has the flexible bank feature, which allows the device to be configured as a top or bottom boot device. sector d esignators (t, b) are thus not included in part number. 10. the asynchronous access time is given first, followed by the burst (or page) mode access time in parentheses. for pdl640g/12 7h/129h asynchronous access times: 53 = 55 ns; 63, 68 = 65 ns; 73 = 70 ns; 83, 88= 80 ns; 98 = 90 ns. speed designators ending in ?3? indicate a 3 v (2.7?3.1 v) v io range, while those ending in ?8? indicate a 1.8 v (1.65?1.95 v) v io range.
7 3.0 volt-only flash memory (continued) architecture 2 density ordering part number 1 byte/word count x bus width additional features, sector size/count 5 device number sector 3 access times (ns) package (pin/ball count) 4 temp. range v cc (v) sim. r/w 4 mbit am29dl400b t, b 70 e (48), f (48), s (44) c, i 2.7?3.6 512 k x 8, 256 k x 16 split 1mb/3mb. banks 1?2 (kb): [16,32,(4)8,32,16] [(6)64] 80, 90, 120 c, i, e 8 mbit am29dl800b t, b 70 e (48), f (48), s (44), wb (48) c, i 2.7?3.6 1 m x 8, 512 k x 16 split 1mb/7mb. bank 1?2 (kb): [16,32,(4)8,32,16] [(14)64] 90, 120 c, i, e 16 mbit am29dl161d/ 162d/163d/164d t, b 70, 90, 120 e (48), wc (48), pc (64) i 2.7?3.6 2 m x 8, 1 m x 16 secsi sector, wp#/acc, cfi. 161 split 0.5/15.5mb, 162 split 2/14mb, 163 split 4/12mb, 164 split 8/8mb. sector sizes (kb): (8)8,(31)64 32 mbit am29dl320g t, b 6 70, 90, 120 e (48), wd (63), wm (48), pc (64) i, e 2.7?3.6 4 m x 8, 2 m x 16 secsi sector, wp#/acc, cfi. four banks, split 4/12/12/4 mb. sector sizes (kb): [(8)8,(7)64] [(24)64] [(24)64] [(8)64] 32 mbit am29dl322g/ 323g/324g t, b 70, 90, 120 pc (64) i 2.7?3.6 4 m x 8, 2 m x 16 secsi sector, wp#/acc, cfi. 322 split 4/28mb, 323 split 8/24mb, 324 split 16/16mb. sector sizes (kb): (8)8,(63)64 e (48), wd (63), wm (48) i, e 64 mbit am29dl640g t, b 6 70, 90 e (48), wh (63), pc (64) i 2.7?3.6 8 m x 8, 4 m x 16 secsi sector, wp#/acc, cfi. four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(8)8,(15)64]. 120 i, e 128 mbit am29dl642g t, b 6 70, 90 md (63) i 2.7?3.6 16 m x 8, 8 m x 16 two am29dl640g devices in a single package. burst mode 8 mbit am29bl802c b 65r (17) 7 z (56) i 3.0?3.6 512 k x 16 5v tolerant i/o, 32 word sequential burst. sector sizes (kw): 8,4,4,48,(3)64,(2)128 also available in kgd. 65r (18) 7 e 70r (24), 90r (26), 120r (26) 7 i, e 16 mbit am29bl162c b 65r (17) 7 z (56) i 3.0?3.6 1 m x 16 5v tolerant i/o, 32 word sequential burst, cfi, also available in kgd. sector sizes (kw): 8,4,4,112,(7)128 65r (18) 7 e 70r (24), 90r (26), 120r (26) 7 i, e page mode 16 mbit am29pl160c b 65r (25), 70r (25), 90r (30) 7 e (48), s (44), sk (44) i 3.0?3.6 2 m x 8, 1 m x 16 5v tolerant i/o, 16-byte page, cfi. sector sizes (kb): 16,8,8,224,(7)256 90 (30), 120 (30) 7 i 2.7?3.6 32 mbit am29pl320d t, b 60r (20), 70r (25) 7 wp (84) i 3.0?3.6 2 m x 16, 1 m x 32 secsi sector, acc, wp#, cfi, x32 bit data bus. sector sizes (kw): 16,8,8,96,(15)128 70 (25), 90 (35) 7 2.7?3.6 notes: 1. contact amd or an amd representative for availability. see ordering part number designators table and individual data sheets for details. 2. sim r/w = simultaneous read/write feature: read from one bank while writing to any other bank. 3. sector architecture: u = uniform, t = top boot, b = bottom boot. 4. pin/ball count provided in parenthesis is for information only, and is not included in the actual ordering part number. 5. features: wp# = write protect input. acc = programming acceleration input. secsi sector = secured silicon (unique/random id). cfi = comm on flash interface. bank & sector size/count: bank contents are given in square brackets. sector counts are given in parentheses. kw = kilowords, kb = kilobytes, mb = megabits. 6. this product has the flexible bank feature, which allows the device to be configured as a top or bottom boot device. sector d esignators (t, b) are thus not included in part number. 7. the asynchronous access time is given first, followed by the burst (or page) mode access time in parentheses. 8. part number designator not required for uniform sector.
8 3.0 volt-only flash memory architecture density ordering part number 1 byte/word count x bus width additional features, sector size/count 5 device number sector 2 access times (ns) package (pin/ball count) 3 temp. range v cc (v) ultra nand tm 64 mbit am30lv0064d uniform 6 j40 7 e2 (40/44), f2 (40/44), wg (40) i 2.7?3.6 8 m x 8 5v tolerant i/o, 7 s initial read, 50 ns sequential 1024 blocks, 1 block = 528 bytes x 16 pages conventional 1 mbit am29lv001b t, b 45r e (32), f (32), j (32) c 3.0?3.6 128 k x 8 sector sizes (kb): 8,4,4,(7)16 55, 70, 90 c, i, e 2.7?3.6 1 mbit am29lv010b uniform 6 45r e (32), f (32), j (32) c 3.0?3.6 128 k x 8 sector size (kb): (8)16 55, 70, 90 c, i, e 2.7?3.6 2 mbit am29lv002b t, b 55r e (40), f (40) c, i 3.0?3.6 256 k x 8 sector sizes (kb): 16,8,8,32,(3)64 70, 90, 120 c, i, e 2.7?3.6 2 mbit am29lv200b t, b 55r e (48), f (48), s (44) c, i 3.0?3.6 256 k x 8, 128 k x 16 sector sizes (kb): 16,8,8,32,(3)64 70 c, i 2.7?3.6 90, 120 c, i, e 2.7?3.6 4 mbit am29lv004b t, b 70 e (40), f (40) c, i 2.7?3.6 512 k x 8 sector sizes (kb): 16,8,8,32,(7)64 90, 120 c, i, e 4 mbit am29lv040b uniform 6 60r e (32), f (32), j (32) c, i 3.0?3.6 512 k x 8 sector size (kb): (8)64 70, 90, 120 c, i, e 2.7?3.6 4 mbit am29lv400b t, b 55r e (48), f (48), s (44), wa (48) c, i 3.0?3.6 512 k x 8, 256 k x 16 also available in kgd. sector sizes (kb): 16,8,8,32,(7)64 70, 90, 120 c, i, e 2.7?3.6 8 mbit am29lv008b t, b 70r e (40), f (40) c, i 3.0?3.6 1 m x 8 sector sizes (kb): 16,8,8,32,(15)64 90, 120 c, i, e 2.7?3.6 8 mbit am29lv081b uniform 6 70 e (40), f (40) c, i 3.0?3.6 1 m x 8 sector size (kb): (16)64 90, 120 c, i, e 2.7?3.6 8 mbit am29lv800b t, b 70 e (48), f (48), s (44) c, i 2.7?3.6 1 m x 8, 512 k x 16 also available in kgd. sector sizes (kb): 16,8,8,32,(15)64 90, 120 e (48), f (48), s (44) c, i, e wb (48) c, i 16 mbit am29lv017d uniform 6 70, 90, 120 e (40), f (40), wc (48) c, i 2.7?3.6 2 m x 8 address don?t care, cfi. sector size (kb):(32)64 16 mbit am29lv116d t, b 70, 90, 120 e (40), f (40) c, i 3.0?3.6 2 m x 8 cfi. sector sizes (kb): 16,8,8,32,(15)64 16 mbit am29lv160b t, b 70r e (48), f (48), s (44), wc (48) c 3.0?3.6 2 m x 8, 1 m x 16 cfi. sector sizes (kb): 16,8,8,32,(31)64, 0.32 m process technology 80, 90, 120 c, i, e 2.7?3.6 16 mbit am29lv160d t, b 70, 90, 120 e (48), f (48), s (44), wc (48) c, i, e 2.7?3.6 2 m x 8, 1 m x 16 cfi. sector sizes (kb): 16,8,8,32,(31)64, 0.23 m process technology 32 mbit am29lv033c uniform 6 70 e (40), f (40), wd (63) i 2.7?3.6 4 m x 8 address don?t care, acc, cfi. sector size (kb): (64)64 90, 120 i, e 32 mbit am29lv320d t, b 90, 120 e (48), wm (48) c, i 2.7?3.6 4 m x 8, 2 m x 16 secsi sector, wp#/acc, cfi. sector sizes (kb): (8)8, (63)64 notes: 1. contact amd or an amd representative for availability. see ordering part number designators table and individual data sheets for details. products listed in italics are not yet introduced. 2. sector architecture: u = uniform, t = top boot, b = bottom boot. 3. pin/ball count provided in parenthesis is for information only, and is not included in the actual ordering part number. 4. features: wp# = write protect input. acc = programming acceleration input. secsi sector = secured silicon (unique/random id). cfi = comm on flash interface. bank & sector size/count: bank contents are given in square brackets. sector counts are given in parentheses. kw = kilowords, kb = kilobytes, mb = megabits. 5. this product has not yet been introduced; features may be pending, and specifications may be subject to change. contact amd o r an amd representative for more information. 6. part number designator not required for uniform sector. 7. am30lv family: in the part number, the designator indicates the percentage of good blocks instead of the access speed.
9 3.0 volt-only flash memory (continued) architecture density ordering part number 1 v cc byte/word count x bus width additional features, sector size/count 5 device number sector 2 access times (ns) package (pin/ball count) 4 temp. range v cc v io conventional (continued) 64 mbit am29lv065d u 90r, 101r e (48), f (48), wh (63) i 3.0?3.6 3.0?5.0 8 m x 8 address don?t care, secsi sector, acc, cfi, versatileio. sector size (kb): (128)64. 120r, 121r i, e 1.8?2.9 64 mbit am29lv640d h, l 90r 5 z (56) i 3.0?3.6 3.0?5.0 4 m x 16 secsi sector, wp#, acc, cfi, versatileio. sector size (kw): (128)32. package z has wp#, no ry/by#. package wh & pc have ry/by#, no wp#. 101r (100 ns) 5 1.8?2.9 120r 5 i, e 3.0?5.0 121r (120 ns) 5 1.8?2.9 u 90r 5 wh (63), pc (64) i 3.0?5.0 101r (100 ns) 5 1.8?2.9 120r 5 i, e 3.0?5.0 121r (120 ns) 5 1.8?2.9 64 mbit am29lv640g u 53r (55 ns) wh (63), pc (64) i 3.0?3.6 3.0?3.6 4 m x 16 secsi sector, wp#, acc, cfi, versatileio. sector size (kw): (128)32. 73 (70 ns) 5 2.7?3.6 2.7?3.6 64 mbit am29lv641g h, l 53r (55 ns) e (48), f (48) (wp#, no ry/by#) i 3.0?3.6 3.0?3.6 4 m x 16 secsi sector, wp#, acc, cfi, versatileio. sector size (kw): (128)32. 73 (70 ns) 5 2.7?3.6 2.7?3.6 64 mbit am29lv641d h, l 90r 5 e (48), f (48) i 3.0?3.6 3.0?5.0 4 m x 16 secsi sector, wp#, acc, cfi, versatileio. sector size (kw): (128)32. device has wp#, but no ry/by#. 101r (100 ns) 5 1.8?2.9 120r 5 i, e 3.0?5.0 121r (120 ns) 5 1.8?2.9 128 mbit am29lv642d u 90r (100 ns) 5 pa(64) i 3.0?3.6 3.0?5.0 8 m x 16 two am29lv640d devices in a single package. secsi sector, wp#, acc, cfi, versatileio. 12r (120 ns) 5 i, e 128 mbit am29lv652d u 90r (100 ns) 5 ma(63) i 3.0?3.6 3.0?5.0 16 m x 8 two am29lv065d devices in a single package. address don?t care, secsi sector, acc, cfi, versatileio. 12r (120 ns) 5 i, e notes: 1. contact an amd representative for availability. see ordering part number designators table and individual data sheets for det ails. 2. sector architecture: u = uniform, t = top boot, b = bottom boot. 3. pin count provided in parenthesis is for information only, and is not included in the actual ordering part number. 4. features: wp# = write protect input. cfi = common flash interface. address don?t care: specific addresses during unlock cycles in comman d sequence are not required. sector size/count: sector counts are given in parentheses. kb = kilobytes. 5. part numbers with 101r and 121r have v io = 1.8?2.9 v. part numbers with 90r and 120r have v io = 3.0?5.0 v.
10 32 pin tsop** 32 pin plcc** 48 pin tsop** 44 pin so 56 pin ssop 48/63 ball fine-pitch bga 64-ball fortified bga **compatible with 5-volt equivalents. (1) migration may be to either/any indicated device (2) 40 to 48 pin migration (3) 48 to 63 ball migration (4) 3 pin change 5) 1 pin change 6) 1 pin change from lv400 to dl400 (7) 44 to 56 pin migration, 1 pin requires reroute to opposite side of package. (8) 63-ball fine-pitch bga to 64-ball fortifie d bga migration. see page 5 or publication number 26677 for mirrorbit drop-in compatibility. 4 mb 1 mb x8 x8/x16 am29lv004 low-voltage package migration am29lv040 am29lv010 am29lv001 am29lv200 am29dl400 am29lv400 am29ds323 am29dl32x am29lv320 am29dl640 am29lv641 am29dl800 am29lv800 am29sl800 am29ds163 am29dl16x am29lv160 am29sl160 am29lv200 am29dl400 am29lv400 (6) am29lv640 am29dl800 am29lv800 am29lv160 am29lv400 am29ds323 am29dl32x am29lv320 am29dl640 am29lv640 am29dl800 am29lv800 am29sl800 am29ds163 am29dl16x am29lv160 am29sl160 40/48 pin tsop 48/63 ball fbga 8 mb 64 mb 16 mb 2 mb 32 mb am29lv004 am29lv033 am29lv004 am29lv002 3 5 1,4 7 am29lv065 am29lv008/ am29lv081 am29lv116/ am29lv017 1 11 1 111,3 11 1 2 8 5 am29bl802 am29bl162 am29bds323 am29bds643 am29lv642 128 mb am29lv652 5.0 volt-only flash package migration 32 pin tsop 32 pin plcc 32 pin pdip 40 pin tsop 44 pin so x8 1 mb 2 mb 4 mb 48 pin tsop 44 pin psop x8/x16 8 mb 16 mb 32 mb am29f010 am29f002(n)b am29f004 am29f040 am29f200 am29f400 am29f800 am29f160 am29f080 am29f016 am29f017 am29f032
11 5 volt-only conventional flash memory notes: 1. contact an amd representative for availability. see ordering part number designators table and individual data sheets for det ails. 2. pin count provided in parenthesis is for information only, and is not included in the actual ordering part number. 3. features: wp# = write protect input. cfi = common flash interface. address don?t care: specific addresses during unlock cycles in comman d sequence are not required. sector size/count: sector counts are given in parentheses. kb = kilobytes. 4. part number designator not required for uniform sector. 5. ?0? after temperature range indicates v cc = 5.0 v 10%. density ordering part number 1 voltage supply organization additional features, sector size/count 4 device number sector access times (ns) package (pin count) 3 temp. range 1 mbit am29f010b uniform 4 45 p (32) c, i 5 v5% 128 k x 8 also available in kgd. sector size (kb): (8)16 j (32), e (32), f (32) c, i, e 55, 70 p (32) c, i 5 v10% j (32), e (32), f (32) c, i, e 90, 120 p (32), j (32), e (32), f (32) c, i, e 2 mbit am29f002b, am29f002nb t, b 55 p (32) c 5 v5% 256 k x 8 f002nb has no reset# input. sector sizes (kb): 16,8,8,32,(3)64 55 j (32), e (32) c, i 70 p (32), j (32), e (32) c, i 5 v10% 90, 120 p (32), j (32), e (32) c, i, e 2 mbit am29f200b t, b 45 e (48), f (48), s (44) c, i 5 v5% 256 k x 8, 128 k x 16 sector sizes (kb): 16,8,8,32,(3)64. also available in kgd 50 c, i, e 55, 70, 90, 120 c, i, e 5 v10% 4 mbit am29f004b t, b 55 j (32) i 5 v5% 512 k x 8 sector sizes (kb): 16,8,8,32,(7)64 70 i 5 v10% 90, 120 i, e 4 mbit am29f040b uniform 4 55 j (32), e (32), f (32) c, i, e 5 v5% 512 k x 8 sector size (kb): (8)64 70 j (32), e (32), f (32) c, i, e 5 v10% 90, 120, 150 p (32), j (32), e (32), f (32) c, i, e 4 mbit am29f400b t, b 45 e (48), f (48), s (44) c, i 5 v5% 512 k x 8, 256 k x 16 also available in kgd. sector sizes (kb): 16,8,8,32,(7)64 50, 55 c, i, e 55 c0, i0, e0 5 5 v10% 70, 90, 120, 150 c, i, e 8 mbit am29f080b uniform 4 55 e (40), f (40), s (44) c, i 5 v5% 1 m x 8 address don?t care. sector size (kb): (16)64 70 c, i 5 v10% 90, 120, 150 c, i, e 8 mbit am29f800b t, b 55, 70, 90, 120, 150 e (48), f (48), s (44), wb (48) c, i, e 5 v10% 1 m x 8, 512 k x 16 also available in kgd. sector sizes (kb): 16,8,8,32,(15)64 16 mbit am29f016d uniform 4 70 e4 (40), f4 (40), e (48), f (48), s (44) c, i 5 v10% 2 m x 8 also available in kgd. sector size (kb): (32)64 90, 120, 150 c, i, e 16 mbit am29f017d uniform 4 70 e4 (40), f4 (40), e (48), f (48), c, i 5 v10% 2 m x 8 address don?t care. sector size (kb): (32)64 90, 120, 150 c, i, e 16 mbit am29f160d t, b 75 (70 ns) e (48), f (48) c, i 5 v5% 2 m x 8, 1 m x 16 wp#, cfi. sector sizes (kb): 16,8,8,32,(31)64 90, 120 c, i 5 v10% 32 mbit am29f032b uniform 4 75 (70 ns) e (40), f (40), s (44) c, i 5 v5% 4 m x 8 sector size (kb): (64)64 90, 120, 150 c, i, e 5 v10%
12 ordering part number designators am29lv 640 d u 90r wh i optional processing blank = standard processing n = esn devices temperature range c = commercial (0 c to +70 c) i = industrial (?40 c to +85 c) e = extended (?55 c to +125 c) package type j = rectangular plastic leaded chip carrier (plcc) k = 80-pin plastic quad flat package (pqfp) (pqr080) p = plastic dual inline package (pdip) s = 44-pin small outline (so) package (so 044) sk = 44-pin reverse pinout small outline package (sor044) z = 56-pin shrink small outline package (ssop) (sso056) thin small outline packages (tsop): e = 32, 40, or 48-pin standard pinout (ts 048) (for am29f016/017 devices only, e = 48-pin, e4 = 40-pin) e2 = 40/44-pin type-ii standard pinout (ts 044) f = 32, 40, or 48-pin reverse pinout (tsr048) (for am29f016/017 devices only, f = 48-pin, f4 = 40-pin) f2 = 40/44-pin type-ii reverse pinout (tsr044) fine-pitch ball grid array packages, 0.8 mm ball pitch (unless otherwise noted): ma = 63-ball, 11 x 12 mm body (fsa063) md = 63-ball, 10.95 x 11.95 body (fsd063) va = 44-ball, 9.2 x 8 mm body, 0.5 mm pitch (vda044) vk = 80-ball, 11.5 x 9 mm body (vbb080) vm = 64-ball, 8 x 9 mm (vbd064) fine-pitch ball grid array packages (continued) wa = 48-ball, 6 x 8 mm body (fba048) wb = 48-ball, 6 x 9 mm body (fbb048) wc = 48-ball, 8 x 9 mm body (fbc048) wd = 63-ball, 8 x 14 mm body (fbd063) wg = 40-ball, 8 x 15 mm body (fbe040) wh = 63-ball, 12 x 11 mm body (fbe063) wk = 47-ball, 7 x 10 mm body, 0.5 mm ball pitch (fdd047) wl = 48-ball, 11 x 10 mm body, 0.5 mm ball pitch (fde048) wm = 48-ball, 6 x 12 mm body (fbd048) wp = 84-ball, 11 x 12 mm body (fbf084) ws = 80-ball, 11 x 12 mm body (fbe080) fortified ball grid array packages, 1.0 mm ball pitch (unless otherwise noted): pa = 64-ball, 13 x 11 mm body (lsa064) pb = 80-ball, 13 x 11 mm body (laa080) pc = 64-ball 13 x 11 mm body (laa064) pe = 80-ball, 10 x 15 mm body (lab080) pg = 64-ball, 18 x 12 mm body (lac064) ph = 80-ball, 13 x 11 mm body (lsb080) pi = 80-ball, 11 x 12 mm body (lsc080) speed option (t acc ), voltage regulation 1.8 volt devices **(*) = 2 or 3 digits: (am29sl, ds) indicates speed in ns, v cc = 1.8?2.2 v **(*) = (am29bds) 2 or 3 characters indicate clock rate, asynchronous read access, handshaking type. see listing notes. 2.5 v devices **(*) = (am29bdd) 3 digits indicate initial burst or asynchronous read access 3 volt mirrorbit devices **(*)(r) = two (or three) digits: 1 (or 2) represent speed in ns x 10. last digit indicates v io range. 0 = no v io . 1: v io = v cc . 3: v io = 3 v. 5: v io = 1.8 v. ?r? indicates regulated voltage range 3 volt non-mirrorbit devices **(*)r = 2 or 3 digits: indicates speed in ns; device is full voltage range. ?r? indicates regulated voltage range. *(*)1(r) = (am29lv64xd/g) first two digits indicate speed in ns x 10. ?1? indicates v io < v cc ; ?r? indicates regulated voltage range ** = (am29pdl) first digit represents speed in ns x 10. last digit indicates v io range. 3: v io = 3 v. 8: v io = 1.8 v. 5 volt devices *(*)0 = speed option ends in ?0?: indicates speed in ns. v cc = 5.0 v 10% (4.5?-5.5 v) *5 = speed option ends in ?5?: check table and/or data sheet for actual speed and voltage range. (am29f400) if part number has a ?0? after the temperature range, then v cc = 5.0 v 10% (4.5?-5.5 v) sector architecture and sector write protection t = top boot sector b = bottom boot sector h = uniform sector device, wp# protects highest addressed sector l = uniform sector device, wp# protects lowest addressed sector u/blank = uniform sector device j40 = (ultranand only) 100% usable blocks process technology b = 0.32 m technology c = 0.32 m thin-film technology d = 0.23 m thin-film technology g = 0.17 m thin-film technology m = 0.23 m mirrorbit technology n = 0.13 m mirrorbit technology density, bus width, and sector organization ***(*) = density is as noted in table. digits broadly give an indication of device density. bus width and organization vary by family. flash memory device family am29bds = 1.8 volt-only, simultaneous read/write, burst mode am29ds = 1.8 volt-only, simultaneous read/write am29pds = 1.8 volt-only, simultaneous read/write, page mode am29sl = 1.8 volt-only am29bdd = 2.5 volt-only, simultaneous read/write, burst mode am29lv = 3 volt-only (including mirrorbit) am29dl = 3 volt-only, simultaneous read/write am29bl = 3 volt-only, burst mode am29pl = 3 volt-only, page mode am29pdl = 3 volt-only, simultaneous read/write, page mode am30lv = 3 volt-only, ultranand tm am29f = 5 volt-only
13 1.8 volt-only flash memory + sram in multi-chip packages (mcp) notes: 1. mcp physical packages are marked with an assigned number that does not reflect the part number that does not reflect the orde ring part number. to identify the physical device, refer to the appropriate amd data sheet. 2. simultaneous read/write feature: read from one bank while writing to any other bank. 3. flash speed (clock/asynchronous/sram): d = 54 mhz/70 ns/70 ns; c = 40 mhz/85 ns/85 ns. 8 = 1.8 v v io , reduced wait-state handshaking; 9 = 1.8 v v io , standard handshaking. 4. flash speed: 10 = 100 ns, 11 = 110 ns. sram speed: 10, 11 = 70 ns. 5. features: wp# = write protect input. acc = programming acceleration input. secsi sector = secured silicon (unique/random id). cfi = comm on flash interface. bank & sector size/count: bank contents are given in square brackets. sector counts are given in parentheses. kw = kilowords, kb = kilobytes, mb = megabits. notes: 1. mcp physical packages are marked with an assigned number that does not reflect the part number that does not reflect the orde ring part number. to identify the physical device, refer to the appropriate amd data sheet. 2. simultaneous read/write feature: read from one bank while writing to any other bank. 3. features: wp# = write protect input. acc = programming acceleration input. secsi sector = secured silicon (unique/random id). cfi = comm on flash interface. bank & sector size/count: bank contents are given in square brackets. sector counts are given in parentheses. kw = kilowords, kb = kilobytes, mb = megabits 4. this product has the flexible bank feature, which allows the device to be configured as a top or bottom boot device. sector d esignator (t, b) is thus not included in part number. 5. flash/sram speed: 71 = 70 ns/55 ns; 75 = 70 ns/55 ns. architecture flash + sram density ordering part number 1 fbga package voltage supply bus width (flash, sram) features & sector/bank information (flash devices only) 5 device number sector access times (ns) temp. range simultaneous read/write, burst mode flash + sram 64 mbit flash + 8 mbit sram am42bds6408g t, b d8, d9, c8, c9 3 i flb093 1.65?1.95 v x16, x16 wp#, acc. separate address and data buses. bank split 4 x 16mb. banks a?d (kw): [(4)8,(31)32] [(32)32] [(32)32] [(4)8,(31)32] 64 mbit flash + 16 mbit sram am42bds640ag t, b d8, d9, c8, c9 3 i fsc093 1.65?1.95 v x16, x16 wp#, acc. separate address and data buses. bank split 4 x 16mb. banks a?d (kw): [(4)8,(31)32] [(32)32] [(32)32] [(4)8,(31)32] 128 mbit flash + 16 mbit sram am54bds128ag t, b d8, d9, c8, c9 3 i fma093 1.65?1.95 v x16, x16 wp#, acc. separate address and data buses. each flash device has 4 banks of 16mb. banks a?d (kw): [(4)8,(31)32] [(32)32] [(32)32] [(4)8,(31)32] simultaneous read/write, page mode flash + sram 32 mbit flash + 4 mbit sram am41pds3224d t, b 10,11 4 i flb073 1.8?2.2 v x16, x8/x16 secsi sector, wp#/acc, cfi. bank split 4/28mb. banks 1?2 (kw): [(8)4,(7)32] [(56)32] 32 mbit flash + 8 mbit sram am41pds3228d t, b 10,11 4 i flb073 1.8?2.2 v x16, x8/x16 secsi sector, wp#/acc, cfi. bank split 4/28mb. banks 1?2 (kw): [(8)4,(7)32] [(56)32] 3 volt-only flash memory + sram in multi-chip packages (mcp) architecture 2 /bus width flash/sram density (mbit) ordering part number 1 fbga package voltage supply features & sector/bank information (flash devices only) device number 1 sector access times (ns) temp. range simultaneous read/write flash (x8/x16) + sram (x8/x16) 16/4 am41dl1614d/ 1624d/1634d/1644d t, b 70, 85 i fla069 2.7?3.3 v 161 split 0.5/15.5mb, 162 split 2/14mb, 163 split 4/12mb, 164 split 8/8mb. sector sizes (kb): (8)8,(31)64 32/4 am41dl3204g t, b 4 70, 85 i flb073 2.7?3.3 v four banks, split 4/12/12/4 mb. sector sizes (kb): [(8)8,(7)64] [(24)64] [(24)64] [(8)64] 32/4 am41dl3224g/ 3234g/3244g t, b 70, 85 i flb073 2.7?3.3 v 322 split 4/28mb, 323 split 8/24mb, 324 split 16/16mb. sector sizes (kb): (8)8,(63)64 32/8 am41dl3208g t, b 4 70, 85 i flb073 2.7?3.3 v four banks, split 4/12/12/4 mb. sector sizes (kb): [(8)8,(7)64] [(24)64] [(24)64] [(8)64] 32/8 am41dl3228g/ 3238g/3248g t, b 70, 85 i flb073 2.7?3.3 v 322 split 4/28mb, 323 split 8/24mb, 324 split 16/16mb. sector sizes (kb): (8)8,(63)64 64/8 am41dl6408g t, b 4 70, 71 6 , 85 i flb073 2.7?3.3 v four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8].
14 notes: 1. mcp physical packages are marked with an assigned number that does not reflect the part number that does not reflect the orde ring part number. to identify the physical device, refer to the appropriate amd data sheet. 2. sim r/w = simultaneous read/write feature: read from one bank while writing to any other bank. 3. features: wp# = write protect input. acc = programming acceleration input. secsi sector = secured silicon (unique/random id). cfi = comm on flash interface. bank & sector size/count: bank contents are given in square brackets. sector counts are given in parentheses. kw = kilowords, kb = kilobytes, mb = megabits 4. this product has not yet been introduced; features may be pending, and specifications may be subject to change. contact amd o r an amd representative for more information. 5. this product has the flexible bank feature, which allows the device to be configured as a top or bottom boot device. sector d esignator (t, b) is thus not included in part number. 6. flash/sram speed: 71 = 70 ns/55 ns; 75 = 70 ns/55 ns. 3 volt-only flash memory + sram in multi-chip packages (mcp) (continued) architecture 2 /bus width flash/ sram density (mbit) device number 1 sector access times (ns) fbga package temp. range voltage supply sector/bank information (flash devices only) 3 simultaneous read/write flash (x8/x16) + sram (x16) 16/2 am42dl1612d/ 1622d/1632d/1642d t, b 70, 85 fla069 i 2.7?3.3 v 161 split 0.5/15.5mb, 162 split 2/14mb, 163 split 4/12mb, 164 split 8/8mb. sector sizes (kb): (8)8,(31)64 16/4 am42dl1614d/ 1624d/1634d/1644d t, b 70, 85 fla069 i 2.7?3.3 v 161 split 0.5/15.5mb, 162 split 2/14mb, 163 split 4/12mb, 164 split 8/8mb. sector sizes (kb): (8)8,(31)64 32/4 am42dl3224g/ 3234g/3244g t, b 75 6 , 70, 85 flb073 i 2.7?3.3 v 322 split 4/28mb, 323 split 8/24mb, 324 split 16/16mb. sector sizes (kb): (8)8,(63)64 64/2 am42dl6402g t, b 5 65, 70, 85, 90 flb073 i 2.7?3.3 v four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8]. 64/4 am42dl6404g t, b 5 70, 85 flb073 i 2.7?3.3 v four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8]. 64/16 am42dl640ag t, b 5 70, 71 6 , 85 fsc073 i 2.7?3.3 v four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8]. simultaneous read/write flash (x8/x16) + pseudo sram (x8/x16) 32/8 am45dl3208g t, b 5 70, 85 flb073 i 2.7?3.3 v four banks, split 4/12/12/4 mb. sector sizes (kb): [(8)8,(7)64] [(24)64] [(24)64] [(8)64] 32/8 am45dl3228g/ 3238g/3248g t, b 70, 85 flb073 i 2.7?3.3 v 322 split 4/28mb, 323 split 8/24mb, 324 split 16/16mb. sector sizes (kb): (8)8,(63)64 64/8 am45dl6408g t, b 5 70, 85 flb073 i 2.7?3.3 v four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8]. simultaneous read/write flash (x8/x16) + pseudo sram (x16) 32/32 am49dl320bg t, b 5 70, 85 flb073 i 2.7?3.3 v four banks, split 4/12/12/4 mb. sector sizes (kb): [(8)8,(7)64] [(24)64] [(24)64] [(8)64] 32/32 am49dl322bg/ 323bg/324bg t, b 5 70, 85 flb073 i 2.7?3.3 v 322 split 4/28mb, 323 split 8/24mb, 324 split 16/16mb. sector sizes (kb): (8)8,(63)64 64/16 am49dl640ag t, b 5 70, 85 flj073 i 2.7?3.3 v four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8]. 64/32 am49dl640bg t, b 5 70, 85 flb073 i 2.7?3.3 v four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8]. 96/8 am50dl9608g t, b 5 70, 75 6 fta073 i 2.7?3.3 v combines 64 & 32 mbit flash. dl640g has four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8]. dl320g has four banks, split 4/12/12/4 mb. sector sizes (kb): [(8)8,(7)64] [(24)64] [(24)64] [(8)64] 128/32 am50dl128bg t, b 5 70, 85 fta073 i 2.7?3.3 v combines two 64 mbit flash. each dl640g has four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8]. 128/64 am50dl128cg t, b 5 70, 85 fta088 i 2.7?3.3 v combines two 64 mbit flash with a psram. each dl640g has four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8]. sim r/w flash + fastcycle ram + pseudo sram (all x16) 128/64 am55dl128c8g t, b 5 70, 85 fna093 l 2.7?3.1 v combines two 64 mbit flash, one fcram, and one psram. each dl640g has four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8]. sim r/w flash + pseudo sram + diskonchip (all x16) 128/64 am58dl128cdg t, b 5 70, 85 fvc093 li 2.7?3.3 v combines two 64 mbit flash, one psram, and one diskonchip device. each dl640g has four banks, split 8/24/24/8mb. sector sizes (kb): [(8)8,(15)64] [(48)64] [(48)64] [(15)64,(8)8].
15 flash + sram mcp ordering part number designators am 42 dl 640 a g t 85 i t packing method t = 7? tape and reel s = 13? tape and reel temperature range i = industrial (?40 c to +85 c) l = light industrial (?30 c to +85 c) flash+sram speed option (t acc ) 70 = 70 ns flash and sram 71 = 70 ns flash, 55 ns sram 85 = 85 ns flash and sram sector architecture and sector write protection t = top boot sector b = bottom boot sector blank = uniform sector flexible bank organization is configurable for top or bottom boot process technology b = 0.32 m technology c = 0.32 m thin-film technology d = 0.23 m thin-film technology g = 0.17 m thin-film technology sram density 2=2 mbit 4=4 mbit 8=8 mbit a=16 mbit b= 32 mbit c=64 mbit c8 = 64 mbit sram and 8 mbit psram cd = 64 mbit sram and 128 mbit diskonchip flash memory density/bank split ratio 16x = 16 mbit 32x = 32 mbit x = 0 (4 banks, 1:4:4:1 ratio) x = 1 (2 banks, 1:31 ratio) x = 2 (2 banks, 1:7 ratio) x = 3 (2 banks, 1:3 ratio) x = 4 (2 banks, 1:1 ratio) 640 = 64 mbit 128 = 128 mbit amd flash memory architecture package type package designators are not included in mcp part numbers. see device listings in this publication for package types. package type definitions for mcp are as follows: fla069 = 69 balls, 8 x 11 mm body flb073 = 73 balls, 8 x 11.6 mm body flb093 = 93 balls, 8 x 11.6 mm body flj073 = 73 balls, 8 x 11.6 mm body fma093 = 93 balls, 10 x 10 mm body fna093 = 93 balls, 10 x 10 mm body fsc073 = 93 balls, 8 x 11.6 mm body fsc093 = 93 balls, 8 x 11.6 mm body fta073 = 73 balls, 8 x 11.6 mm body fta088 = 88 balls, 8 x 11.6 mm body fvc093 = 93 balls, 9 x 13 mm body all packages are fine-pitch ball grid arrays (bgas), 0.8 mm ball pitch. differences between package dimensions may also include body height and thickness, ball grid size, and ball height and diameter. consult the physical dimensions section in the appropriate data sheet for more details. bds = 1.8 v simultaneous read/write + burst mode dl = 3 v simultaneous read/write pds = 1.8 v simultaneous read/write + page mode flash +sram combinations 41 = flash (x8/x16) + sram (x8/x16) 42 = flash (x8/x16) + sram (x16) 45 = flash (x8/x16) + pseudo sram (x8/x16) 49 = flash (x8/x16) + pseudo sram (x16) 50 = stacked flash (x8/x16) + pseudo sram (x16) 55 = flash + fastcycle ram + sram (all x16) 58 = stacked flash + pseudo sram + diskonchip amd products
16 flash memory in known good die (kgd) form 1,2 notes: 1. for additional product information, see the device listings in the tables for packaged devices. 2. contact an amd representative for minimum order quantity in gel-pak wafer tray packing (ordering designator is dw). 3. part number designator not required for uniform sector. kgd ordering part number designators density part number sector access times (ns) waffle pack qty. (dp) gel-pak ? qty. (dg) surftape? qty. (dt) temp. range pad count voltage supply (v) die size (mm) organization/ additional comments 2.5 v 16 mbit am29bdd160g t, b 64c, 65a 140 66 1600 i, e, h 76 2.5?2.7 4.54 x 7.50 1 m x 16/512 k x 32. simultaneous read/write and burst mode. 3 v 8 mbit am29bl802c b 80r 125 336 1600 i, e, h 51 3.0?3.6 6.85 x 5.44 512 k x 16. burst mode. 16 mbit am29bl162c b 80r 80 252 1600 i, e, h 52 3.0?3.6 6.85 x 7.72 1 m x 16. burst mode. 2 mbit am29lv200b t, b 60r 245 not avail. 2500 c, i 43 3.0?3.6 3.55 x 3.51 256 k x 8, 128 k x 16. 70, 90 120 2.7?3.6 4 mbit am29lv400b t, b 60r 210 not avail. 2500 c, i 43 3.0?3.6 4.70 x 3.56 512 k x 8, 256 k x 16. 70 c, i 2.7?3.6 80, 90, 120 c, i, e 8 mbit am29lv800b t, b 80, 90, 120 140 462 2500 c, i 44 2.7?3.6 3.56 x 7.09 1 m x 8, 512 k x 16. 5 v 1 mbit am29f010b uniform 3 90, 120 400 648 2500 c, i, e 30 4.5?5.5 2.28 x 4.04 128 k x 8. 2 mbit am29f200b t, b 75 (70 ns) 245 486 2500 c, i, e 42 4.75?5.25 3.43 x 3.81 256 k x 8, 128 k x 16. 90, 120 4.5?5.5 4 mbit am29f400b t, b 75 (70 ns) 140 594 2500 c, i, e 43 4.75?5.25 3.42 x 5.02 512 k x 8, 256 k x 16. 90, 120 4.5?5.5 8 mbit am29f800b t, b 90, 120 140 396 1600 c, i, e 44 4.5?5.5 3.43 x 7.42 1 m x 8, 512 k x 16. 16 mbit am29f016d uniform 3 120 100 294 1600 c, i 38 4.5?5.5 4.74 x 5.30 2 m x 8. am29lv 800 b t 90 dt c 1 die revision this number refers to the specific amd manufacturing process and product technology. it is entered in the revision field of amd standard product nomenclature. temperature range c = commercial (0 c to +70 c) i = industrial (?40 c to +85 c) e = extended (?55 c to +125 c) h = super extended (?55 c to +145 c) package type dp = waffle pack (5-tray stack) dg = gel-pak die tray (6-tray stack) wj = wafer jar (contact amd for availability) dt = surftape (7? tape and reel) dw = gel-pak wafer tray (contact amd for minimum order quantity) speed option (t acc ), voltage regulation 2.5 volt devices *** = digits indicate initial burst or asynchronous speed in ns; a = 40 mhz clock, c = 56 mhz clock. v cc = 2.5?2.7 v 3 volt devices **(*) = digits indicate speed in ns; device is full voltage range, v cc = 2.7?3.6 v **(*)r = digits indicate speed in ns, ?r? indicates regulated voltage range v cc = 3.0?3.6 v 5 volt devices *(*)0 = speed option ends in ?0?: indicates speed in ns. v cc = 5.0 v 10% (4.5?-5.5 v) *5 = speed option ends in ?5?: check table listing and/or data sheet for actual speed and voltage range. sector architecture and sector write protection t = top boot sector b = bottom boot sector process technology b = 0.32 m technology c = 0.32 m thin-film technology d = 0.23 m thin-film technology g = 0.17 m thin-film technology density, bus width, and sector organization ***(*) = density is as noted in table. digits broadly give an indication of device density. bus width and organization vary by family. flash memory device family am29lv = 3 volt-only am29bl = 3 volt-only, burst mode am29f = 5 volt-only am29bdd = 2.5 volt-only, simultaneous read/write, burst mode

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