microwave corporation f ebruary 2001 3 - 10 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 web site: www.hittite.com m ultipliers 3 die features gaas mmic 2 to 6 ghz frequency doubler conversion loss: 17 db fo, 3fo, 4fo isolation: > 35 db input drive level :10 to 20 dbm general description the HMC157 is a miniature frequency dou- bler in a mmic die. suppression of undes- ired fundamental and higher order harmon- ics is 35 to 60 db with respect to input signal level and 18 to 43 db with respect to the desired output signal level. the doubler uses the same diode/balun technology used in hittite mmic mixers, features small size and requires no dc bias. typical performance vs. drive level 10 15 20 dbm input frequency range 1.5 - 2.0 1.0 - 2.0 1.0 - 2.0 ghz output frequency range 3.0 - 4.0 2.0 - 4.0 2.0 - 4.0 ghz conversion loss <18 <16 <17 db performance for input signals in the 1.0 - 2.0 ghz band (+15dbm drive) min. ty p. max. fo isolation (with respect to input level) 35 50 db 3fo isolation (with respect to input level) 40 50 db 4fo isolation (with respect to input level) 30 35 db guaranteed performance, 50 ohm system -55 to +85 deg c gaas mmic frequency doubler 1 - 2 ghz input HMC157 v01.0700
microwave corporation f ebruary 2001 3 - 11 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 web site: www.hittite.com 3 m ultipliers die -50 -40 -30 -20 -10 0 22.533.544.55 input=+10dbm input=+15dbm input=+20dbm conversion gain (db) output frequency (ghz) gaas mmic frequency doubler 1 - 2 ghz input -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 12345678910 fo 3fo 4fo isolation (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 1234567 input=+10dbm input=+15dbm input=+20dbm input return loss (db) frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 12345 67 input=+10dbm input=+15dbm input=+20dbm output return loss (db) output frequency (ghz) conversion loss vs. drive level input return loss vs. drive level isolation @ +15 dbm drive level * output return loss vs. drive level * with respect to input level HMC157 v01.0700
microwave corporation f ebruary 2001 3 - 12 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 web site: www.hittite.com m ultipliers 3 die schematic rf out rf in (0.046) (0.046) (0.023) (0.023) (0.041) (0.005) hittite 4415 rfin rfout 1.041 1.168 0.127 1.168 0.584 0.584 absolute maximum ratings input drive +27 dbm storage temperature -65 to +150 deg c operating temperature -55 to +125 deg c outline drawing gaas mmic frequency doubler 1 - 2 ghz input three pads on each corner must be bonded to ground (12 total). all dimensions in millimeters (inches) all tolerances are 0.025 (0.001) die thickness is 0.254 (0.010) bond pads are 0.100 (0.004) square equally spaced at 0.150 (0.006) centers backside metallization: none bond pad metallization: gold HMC157 v01.0700
microwave corporation f ebruary 2001 3 - 13 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 web site: www.hittite.com 3 m ultipliers die gaas mmic frequency doubler 1 - 2 ghz input ball or wedge bond with 1.0 diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package. rf bonds should be as short as possible. handling precautions wire bonding the chip is not back-metallized and can be die mounted with electrically conductive epoxy. the mounting surface should be clean and flat. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturer's schedule. mounting follow these precautions to avoid permanent damage. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes ( see page 8 - 2 ). transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent twee- zers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, twee- zers, or fingers. HMC157 v01.0700
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