the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1998, 2001 mos field effect transistor 2sk2826 switching n-channel power mos fet industrial use data sheet document no. d11273ej3v0ds00 (3rd edition) date published april 2001 ns cp(k) printed in japan the mark ! ! ! ! shows major revised points. description the 2sk2826 is n-channel mos field effect transistor designed for high current switching applications. features ? super low on-state resistance r ds(on)1 = 6.5 m ? max. (v gs = 10 v, i d = 35 a) r ds(on)2 = 9.7 m ? max. (v gs = 4.0 v, i d = 35 a) ? low c iss : c iss = 7200 pf typ. ? built-in gate protection diode absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 60 v gate to source voltage (v ds = 0 v) v gss(ac) 20 v gate to source voltage (v ds = 0 v) v gss(dc) +20, ?10 v drain current (dc) (t c = 25c) i d(dc) 70 a drain current (pulse) note1 i d(pulse) 280 a total power dissipation (t c = 25c) p t1 100 w total power dissipation (t a = 25c) p t2 1.5 w channel temperature t ch 150 c storage temperature t stg ?55 to + 150 c single avalanche current note2 i as 70 a single avalanche energy note2 e as 490 mj notes 1. pw 10 s, duty cycle 1% 2. starting tch = 25c, v dd = 30 v, r g = 25 ?, v gs = 20 0 v ordering information part number package 2sk2826 to-220ab 2sk2826-s to-262 2SK2826-Zj to-263 2SK2826-Z to-220smd note note to-220smd package is produced only in japan. (to-220ab) (to-262) (to-263, to-220smd)
data sheet d11273ej3v0ds 2 2sk2826 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 10 a gate leakage current i gss v gs = 20 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.0 1.5 2.0 v forward transfer admittance | y fs |v ds = 10 v, i d = 35 a 20 94 s drain to source on-state resistance r ds(on)1 v gs = 10 v, i d = 35 a 5.5 6.5 m ? r ds(on)2 v gs = 4.0 v, i d = 35 a 7.0 9.7 m ? input capacitance c iss v ds = 10 v 7200 pf output capacitance c oss v gs = 0 v 2000 pf reverse transfer capacitance c rss f = 1 mhz 700 pf turn-on delay time t d(on) i d = 35 a 100 ns rise time t r v gs = 10 v 1200 ns turn-off delay time t d(off) v dd = 30 v 440 ns fall time t f r g = 10 ? 520 ns total gate charge q g i d = 70 a 150 nc gate to source charge q gs v dd = 48 v 20 nc gate to drain charge q gd v gs = 10 v 40 nc body diode forward voltage v f(s-d) i f = 70 a, v gs = 0 v 0.97 v reverse recovery time t rr i f = 70 a, v gs = 0 v 80 ns reverse recovery charge q rr di/dt = 100a/ s 250 nc test circuit 1 avalanche capability r g = 25 ? 50 ? pg. l v dd v gs = 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs 10% 90% 10% 0 i d 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off pg. 50 ? d.u.t. r l v dd i g = 2 ma
data sheet d11273ej3v0ds 3 2sk2826 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area t c - case temperature - ?c dt - percentage of rated power - % 0 20 40 60 80 100 120 140 160 20 40 60 80 100 total power dissipation vs. case temperature t c - case temperature - ? c p t - total power dissipation - w 0 20 40 60 80 100 120 140 160 140 120 100 80 60 40 20 forward bias safe operating area i d - drain current - a v ds - drain to source voltage - v 1 10 100 0.1 1 10 t c = 25 ? c single pulse 0.1 100 r ds(on) limited i d(pulse) pw = 10 s 1 ms 10 ms dc 1000 100 s 100 ms i d(dc) power dissipation limited transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ? c /w 10 0.001 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse r th(ch-a) = 83.3 ? c /w t c = 25 ? c 10 100 r th(ch-c) = 1.25 ? c /w
data sheet d11273ej3v0ds 4 2sk2826 drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 0.4 0.6 0.8 40 100 80 60 0.2 pulsed v gs =10 v 20 v gs = 4.0 v drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 0 10 10 30 20 30 pulsed 20 t a = 25 ? c i d = 35 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 10 10 20 30 100 1000 pulsed 0 v gs = 10 v v gs = 4.0 v gate cut-off voltage vs. channel temperature v gs(off) - gate cut-off voltage - v 0.5 v ds = 10 v i d = 1 ma 1.0 1.5 2.0 - 50 0 50 100 150 0 200 t ch - channel temperature - ? c forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a 1 10 100 1000 pulsed 02 4 t a = 25 ? c 25 ? c 75 ? c 125 ? c 68 v ds = 10 v forward transfer admittance vs. drain current i d - drain current - a | y fs | - forward transfer admittance - s v ds =10v pulsed 0.1 1.0 10 100 10 100 0.1 1.0 t a = 175 ? c 75 ? c 25 ? c 25 ? c v gs = 0v
data sheet d11273ej3v0ds 5 2sk2826 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ? c r ds(on) - drain to source on-state resistance - m ? 0 - 50 5 0 50 100 150 i d = 25 a 10 20 15 v gs = 10 v v gs = 4.0 v source to drain diode forward voltage 1.0 i sd - diode forward current - a 0 1.5 v sd - source to drain voltage - v 0.5 pulsed 0.1 1 10 100 0 v v gs = 10 v 1000 capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 100 0.1 1000 10000 100000 1 10 100 v gs = 0 v f = 1 mhz c oss c rss c iss switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 10 0.1 100 1000 10000 110 t f t r t d(on) t d(off) 100 v dd = 30 v v gs = 10 v r g = 10 ? reverse recovery time vs. drain current i f - drain current - a t rr - reverse recovery time - ns di/dt = 100 a/ s v gs = 0 v 1 0.1 10 1.0 10 100 1000 100 v gs - gate to source voltage - v dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 0 50 100 150 200 20 40 60 80 2 4 v dd = 48 v 30 v 12 v v ds 6 8 v gs
data sheet d11273ej3v0ds 6 2sk2826 single avalanche current vs. inductive load l - inductive load - h | i as | - single avalanche current - a v dd = 30 v r g = 25 ? 10 100 10 100 1 m 10 m 1.0 i as = 70 a e as = 490 mj v gs = 20 0 v single avalanche energy derating factor starting tch - starting channel temperature - ? c energy derating factor - % 25 50 75 100 60 40 20 0 160 140 125 150 120 100 80 v dd = 30 v r g = 25 ? v gs = 20 0 v i as 70 a
data sheet d11273ej3v0ds 7 2sk2826 package drawings (unit: mm) 1) to-220ab(mp-25) 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 3.60.2 4 3.00.3 1.30.2 0.750.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.30.2 0.50.2 2.80.2 2) to-262(mp-25 fin cut) 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 (10) 4 1.30.2 0.750.3 2.54 typ. 2.54 typ. 8.50.2 12.7 min. 1.30.2 0.50.2 2.80.2 1.00.5 3) to-263 (mp-25zj) (10) 1.40.2 1.00.5 2.54 typ. 2.54 typ. 8.50.2 123 5.70.4 4 2.80.2 4.8 max. 1.30.2 0.50.2 (0.5r) (0.8r) 1.gate 2.drain 3.source 4.fin (drain) 0.70.2 4) to-220smd(mp-25z) note (10) 1.40.2 1.00.5 2.54 typ. 2.54 typ. 8.50.2 123 3.00.5 1.10.4 4 2.80.2 4.8 max. 1.30.2 0.50.2 (0.5r) (0.8r) 1.gate 2.drain 3.source 4.fin (drain) 1.00.3 note this package is produced only in japan. equivalent circuit source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2sk2826 m8e 00. 4 the information in this document is current as of april, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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