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? semiconductor components industries, llc, 2001 march, 2001 rev. 7 1 publication order number: mun2211t1/d mun2211t1 series preferred devices bias resistor transistors npn silicon surface mount transistors with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sc59 package which is designed for low power surface mount applications. ? simplifies circuit design ? reduces board space ? reduces component count ? moisture sensitivity level: 1 ? esd rating human body model: class 1 esd rating machine model: class b ? the sc59 package can be soldered using wave or reflow. the modified gullwinged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ? available in 8 mm embossed tape and reel use the device number to order the 7 inch/3000 unit reel. maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d 230 (note 1.) 338 (note 2.) 1.8 (note 1.) 2.7 (note 2.) mw c/w thermal resistance junction-to-ambient r q ja 540 (note 1.) 370 (note 2.) c/w thermal resistance junction-to-lead r q jl 264 (note 1.) 287 (note 2.) c/w junction and storage temperature range t j , t stg 55 to +150 c 1. fr4 @ minimum pad 2. fr4 @ 1.0 x 1.0 inch pad http://onsemi.com sc59 case 318d style 1 preferred devices are recommended choices for future use and best overall value. npn silicon bias resistor transistors 3 1 2 pin 3 collector (output) pin 1 emitter (ground) pin 2 base (input) r 1 r 2 marking diagram 8x = specific device code m = date code 8x m device marking information see specific marking information in the device marking table on page 2 of this data sheet.
mun2211t1 series http://onsemi.com 2 device marking and resistor values device package marking r1 (k) r2 (k) shipping mun2211t1 sc59 8a 10 10 3000/tape & reel mun2212t1 sc59 8b 22 22 3000/tape & reel mun2213t1 sc59 8c 47 47 3000/tape & reel mun2214t1 sc59 8d 10 47 3000/tape & reel mun2215t1 (note 3.) sc59 8e 10 3000/tape & reel mun2216t1 (note 3.) sc59 8f 4.7 3000/tape & reel mun2230t1 (note 3.) sc59 8g 1.0 1.0 3000/tape & reel mun2231t1 (note 3.) sc59 8h 2.2 2.2 3000/tape & reel mun2232t1 (note 3.) sc59 8j 4.7 4.7 3000/tape & reel mun2233t1 (note 3.) sc59 8k 4.7 47 3000/tape & reel mun2234t1 (note 3.) sc59 8l 22 47 3000/tape & reel mun2236t1 sc59 8n 100 100 3000/tape & reel mun2237t1 sc59 8p 47 22 3000/tape & reel mun2240t1 (note 3.) sc59 8t 47 3000/tape & reel mun2241t1 (note 3.) sc59 8u 100 3000/tape & reel 3. new devices. updated curves to follow in subsequent data sheets.
mun2211t1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo 500 nadc emitter-base cutoff current mun2211t1 (v eb = 6.0 v, i c = 0) mun2212t1 mun2213t1 mun2214t1 mun2215t1 mun2216t1 mun2230t1 mun2231t1 mun2232t1 mun2233t1 mun2234t1 mun2236t1 mun2237t1 mun2240t1 mun2241t1 i ebo 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 madc collector-base breakdown voltage (i c = 10 m a, i e = 0) v (br)cbo 50 vdc collector-emitter breakdown voltage (note 4.) (i c = 2.0 ma, i b = 0) v (br)ceo 50 vdc on characteristics (note 4.) dc current gain mun2211t1 (v ce = 10 v, i c = 5.0 ma) mun2212t1 mun2213t1 mun2214t1 mun2215t1 mun2216t1 mun2230t1 mun2231t1 mun2232t1 mun2233t1 mun2234t1 mun2236t1 mun2237t1 mun2240t1 mun2241t1 h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) (i c = 10 ma, i b = 5 ma) mun2230t1/mun2231t1 (i c = 10 ma, i b = 1 ma) mun2215t1/mun2216t1/ mun2232t1/mun2233t1/mun2234t1 v ce(sat) 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k w ) mun2211t1 mun2212t1 mun2214t1 mun2215t1 mun2216t1 mun2230t1 mun2231t1 mun2232t1 mun2233t1 mun2234t1 (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k w ) mun2213t1 mun2240t1 (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k w ) mun2236t1 (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k w ) mun2237t1 (v cc = 5.0 v, v b = 5.0 v, r l = 1.0 k w ) mun2241t1 v ol 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 4. pulse test: pulse width < 300 m s, duty cycle < 2.0%
mun2211t1 series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (note 5.) (continued) output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k w ) (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k w ) mun2230t1 (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k w ) mun2215t1 mun2216t1 mun2233t1 mun2240t1 v oh 4.9 vdc input resistor mun2211t1 mun2212t1 mun2213t1 mun2214t1 mun2215t1 mun2216t1 mun2230t1 mun2231t1 mun2232t1 mun2233t1 mun2234t1 mun2235t1 mun2236t1 mun2237t1 mun2240t1 mun2241t1 r 1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 70 32.9 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 100 47 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 130 61.1 100 k w resistor ratio mun2211t1/mun2212t1/mun2213t1/ mun2236t1 mun2214t1 mun2215t1/mun2216t1/mun2240t1/ mun2241t1 mun2230t1/mun2231t1/mun2232t1 mun2233t1 mun2234t1 mun2237t1 r 1 /r 2 0.8 0.17 0.8 0.055 0.38 1.7 1.0 0.21 1.0 0.1 0.47 2.1 1.2 0.25 1.2 0.185 0.56 2.6 5. pulse test: pulse width < 300 m s, duty cycle < 2.0% figure 1. derating curve 350 200 150 100 50 0 50 0 50 100 150 t a , ambient temperature ( c) r q ja = 370 c/w 250 p d , power dissipation (mw) 300
mun2211t1 series http://onsemi.com 5 typical electrical characteristics mun2211t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 2. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 v o = 0.2 v t a =-25 c 75 c 25 c 40 50 figure 3. dc current gain figure 4. output capacitance 1 0.1 0.01 0.001 0204060 80 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c -25 c t a =-25 c 25 c i c /i b = 10 figure 5. output current versus input voltage 75 c 25 c t a =-25 c 100 10 1 0.1 0.01 0.001 01 2 34 v in , input voltage (volts) 5678910 figure 6. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v
mun2211t1 series http://onsemi.com 6 typical electrical characteristics mun2212t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 7. v ce(sat) versus i c figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246 810 t a =-25 c 0 i c , collector current (ma) 100 v o = 0.2 v t a =-25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 11. input voltage versus output current 0.001 v ce(sat) , maximum collector voltage (volts) 25 c i c /i b = 10 0.01 0.1 1 40 i c , collector current (ma) 020 6080 50 010203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v t a =-25 c 75 c
mun2211t1 series http://onsemi.com 7 typical electrical characteristics mun2213t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 12. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =-25 c 75 c 25 c figure 13. dc current gain figure 14. output capacitance 100 10 1 0.1 010 2030 40 50 i c , collector current (ma) figure 15. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 figure 16. input voltage versus output current 0204060 80 10 1 0.1 0.01 i c , collector current (ma) t a =-25 c 25 c 75 c v ce(sat) , maximum collector voltage (volts) t a =-25 c 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10
mun2211t1 series http://onsemi.com 8 typical electrical characteristics mun2214t1 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 17. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz l e = 0 v t a = 25 c t a =-25 c 25 c 75 c i c /i b = 10 75 c 25 c t a =-25 c v o = 5 v v o = 0.2 v t a =-25 c 25 c 75 c
mun2211t1 series http://onsemi.com 9 typical electrical characteristics mun2236t1 100 1 0.1 010203035 5 100 10 0510 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 v r , reverse bias voltage (volts) figure 22. v ce(sat) versus i c i c , collector current (ma) 010203040 figure 23. dc current gain 0.1 1 100 i c , collector current (ma) figure 24. output capacitance figure 25. output current versus input voltage v in , input voltage (volts) figure 26. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 v ce = 10 v 1000 100 10 10 f = 1 mhz l e = 0 v t a = 25 c t a = 25 c 25 c 75 c 75 c 25 c t a = 25 c v o = 5 v v o = 0.2 v t a = 25 c 25 c 75 c v ce(sat) , collector voltage (volts) i c /i b = 10 h fe , dc current gain t a = 25 c 25 c 75 c c ob , capacitance (pf) 5 4.5 15 20 25 30 35 40 1 0.1 i c , collector current (ma) 15 25 10 v in , input voltage (volts) 5152535
mun2211t1 series http://onsemi.com 10 typical electrical characteristics mun2237t1 100 1 010203040 5 100 10 024 1.4 1 0.6 0.2 0 0 5 10 15 20 25 30 35 40 45 v r , reverse bias voltage (volts) figure 27. v ce(sat) versus i c i c , collector current (ma) 010203040 figure 28. dc current gain 1 100 i c , collector current (ma) figure 29. output capacitance figure 30. output current versus input voltage v in , input voltage (volts) figure 31. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 v ce = 10 v 1000 100 1 10 f = 1 mhz l e = 0 v t a = 25 c t a = 25 c 25 c 75 c 75 c 25 c t a = 25 c v o = 5 v v o = 0.2 v t a = 25 c 25 c 75 c v ce(sat) , collector voltage (volts) i c /i b = 10 h fe , dc current gain t a = 25 c 25 c 75 c c ob , capacitance (pf) 1.8 6 8 10 12 14 16 1 0.001 i c , collector current (ma) 15 25 10 v in , input voltage (volts) 5152535 10 1.6 1.2 0.8 0.4 2 0.1 0.01 35
mun2211t1 series http://onsemi.com 11 typical applications for npn brts load +12 v figure 32. level shifter: connects 12 or 24 volt circuits to logic in out v cc isolated load from m p or other logic +12 v figure 33. open collector inverter: inverts the input signal figure 34. inexpensive, unregulated current source
mun2211t1 series http://onsemi.com 12 minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. mm inches 2.5-3.0 0.039 1.0 0.094 0.8 0.098-0.118 2.4 0.031 0.95 0.037 0.95 0.037 sc59 power dissipation the power dissipation of the sc59 is a function of the pad size. this can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient; and the operating temperature, t a . using the values provided on the data sheet, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 338 milliwatts. p d = 150 c 25 c = 338 milliwatts 370 c/w the 370 c/w assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 338 milliwatts. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference should be a maximum of 10 c. ? the soldering temperature and time should not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient should be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
mun2211t1 series http://onsemi.com 13 solder stencil guidelines prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. a solder stencil is required to screen the optimum amount of solder paste onto the footprint. the stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. the stencil opening size for the sc59 package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. typical solder heating profile for any given circuit board, there will be a group of control settings that will give the desired heat pattern. the operator must set temperatures for several heating zones, and a figure for belt speed. taken together, these control settings make up a heating aprofileo for that particular circuit board. on machines controlled by a computer, the computer remembers these profiles from one operating session to the next. figure 35 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. this profile will vary among soldering systems but it is a good starting point. factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. this profile shows temperature versus time. the line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. the two profiles are based on a high density and a low density board. the vitronics smd310 convection/infrared reflow soldering system was used to generate this profile. the type of solder used was 62/36/2 tin lead silver with a melting point between 177189 c. when this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. the components on the board are then heated by conduction. the circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. figure 35. typical solder heating profile step 1 preheat zone 1 ramp" step 2 vent soak" step 3 heating zones 2 & 5 ramp" step 4 heating zones 3 & 6 soak" step 5 heating zones 4 & 7 spike" step 6 vent step 7 cooling 200 c 150 c 100 c 50 c time (3 to 7 minutes total) t max solder is liquid for 40 to 80 seconds (depending on mass of assembly) 205 to 219 c peak at solder joint desired curve for low mass assemblies 100 c 150 c 160 c 140 c desired curve for high mass assemblies 170 c
mun2211t1 series http://onsemi.com 14 package dimensions sc59 case 318d04 issue f s g h d c b l a 1 3 2 j k dim a min max min max inches 2.70 3.10 0.1063 0.1220 millimeters b 1.30 1.70 0.0512 0.0669 c 1.00 1.30 0.0394 0.0511 d 0.35 0.50 0.0138 0.0196 g 1.70 2.10 0.0670 0.0826 h 0.013 0.100 0.0005 0.0040 j 0.09 0.18 0.0034 0.0070 k 0.20 0.60 0.0079 0.0236 l 1.25 1.65 0.0493 0.0649 s 2.50 3.00 0.0985 0.1181 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. style 1: pin 1. emitter 2. base 3. collector
mun2211t1 series http://onsemi.com 15 notes
mun2211t1 series http://onsemi.com 16 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mun2211t1/d thermal clad is a registered trademark of the bergquist company north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

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