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*common to substrate and case flat package s 4 s 3 d 4 d 3 d 2 d 1 s 2 s 1 in 2 in 1 v+ v* v l v r 1 2 3 4 5 6 7 14 13 12 11 10 9 8 top view d 1 s 1 nc dual-in-line in 1 d 3 v s 3 v r s 4 v l d 4 v+ nc in 2 d 2 s 2 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view refer to jan38510 information, military section dg189/190/191 vishay siliconix document number: 70034 s-52880erev. c, 28-apr-97 www.vishay.com faxback 408-970-5600 4-1 high-speed drivers with dual spdt jfet switches

constant on-resistance over entire analog range low leakage low crosstalk rad hardness low distortion eliminates large signal errors high precision high bandwidth capability fault protection audio switching video switching sample/hold guidance and control systems aerospace

the dg189/190/191 are precision dual single-pole, double-throw (spdt) analog switches designed to provide accurate switching of video and audio signals. this series is ideally suited for applications requiring a constant on-resistance over the entire analog range. the major difference in the devices is the on-resistance (dg189e10 , dg190e30 , dg191e75 reduced errors are achieved through low leakage current (i d(on) < 2 na). applications which benefit from the flat jfet on-resistance include audio switching, video switching, and data acquisition. to achieve fast and accurate switch performance, each device comprises four n-channel jfet transistors and a ttl compatible bipolar driver. the driver is designed to achieve break-before-make switching action, eliminating the inadvertent shorting between channels and the crosstalk which would result. in the on state, each switch conducts current equally well in either direction. in the off condition, the switches will block up to 20 v peak-to-peak, with feedthrough of less than 60 db at 10 mhz.

logic sw 1 , sw 2 sw 3 , sw 4 0 off on 1 on off logic a 0 o 0.8 v logic a0o 0 . 8 v logic a 1 o 24v l og i c a1o 2 . 4 v
dg189/190/191 vishay siliconix www.vishay.com faxback 408-970-5600 4-2 document number: 70034 s-52880erev. c, 28-apr-97
temp range package part number 25 85 c 16 pi sid b dg189bp 25 to 85 c 16-pin sidebraze dg190bp dg191bp 55 125 c 16 pi sid b dg189ap/883, 5962-9068901mea 55 125 c 16-pin sidebraze dg190ap/883, jm38510/11107bea 55 to 125 c dg191ap/883, jm38510/11108bea 14 - pin flat pack jm38510/11107bxa 14 - pin flat pack jm38510/11108bxa
v+ to v 36 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v+ to v d 33 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v s , v d to v 0.3 to 33 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v d to v d 22 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v l to v 36 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v l to v in 8 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v l to v r 8 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v in to v r 8 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r to v 27 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r to v in 2 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . current (s or d) dg189 200 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . current (s or d) dg190, dg191 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . current (all other pins) 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature 65 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation a 16-pin sidebraze b 900 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14-pin flat pack c 900 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes: a. all leads welded or soldered to pc board. b. derate 12 mw/ c above 75 c c. derate 10 mw/ c above 75 c
figure 1. v r v l v+ s in d v
dg189/190/191 vishay siliconix document number: 70034 s-52880erev. c, 28-apr-97 www.vishay.com faxback 408-970-5600 4-3
test conditions unless specified a suffix 55 to 125 c b suffix 25 to 85 c parameter symbol v+ = 15 v, v = 15 v, v l = 5 v v r = 0 v, v in = 0.8 v or 2 v f temp b typ c min d max d min d max d unit analog switch analog signal range e v analog full 7.5 15 7.5 15 v drain-source on-resistance r ds(on) i s = 10 ma, v d = 7.5 v room full 7.5 10 20 15 25 source off lk c t i s(off) v s = 10 v, v d = 10 v v+ = 10 v, v = 20 v room hot 0.05 10 1000 15 300 a leakage current i s(off) v s = 7.5 v, v d = 7.5 v room hot 0.05 10 1000 15 300 a drain off lk c t i d(off) v s = 10 v, v d = 10 v v+ = 10 v, v = 20 v room hot 0.04 10 1000 15 300 na leakage current i d(off) v s = 7.5 v, v d = 7.5 v room hot 0.03 10 1000 15 300 channel on leakage current i d(on) v d = v s = 7.5 v room hot 0.1 2 200 10 200 saturation drain current i dss 2 ms pulse duration room 300 ma digital input input current with input voltage high i inh v in = 5 v room hot <0.01 10 20 10 20 a input current with input voltage low i inl v in = 0 v full 30 250 250 a dynamic characteristics turn-on time t on see switching time test circuit room 240 400 425 ns turn-off time t off see switching t ime t est circuit room 140 200 225 ns source-off capacitance c s(off) f1mh v s = 5 v, i d = 0 room 21 drain-off capacitance c d(off) f = 1 mhz v d = 5 v, i s = 0 room 17 pf channel-on capacitance c d(on) v d = v s = 0 v room 17 off isolation oirr f = 1 mhz, r l = 75 room >55 db power supplies positive supply current i+ v0v5v room 0.6 1.5 1.5 a negative supply current i v in = 0 v , or 5 v room 2.7 5 5 ma logic supply current i l v in = 0 v , or 5 v room 3.1 4.5 4.5 ma reference supply current i r room 1 2 2 notes: a. refer to process option flowchart. b. room = 25 c, full = as determined by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. guaranteed by design, not subject to production test. f. v in = input voltage to perform proper function.
dg189/190/191 vishay siliconix www.vishay.com faxback 408-970-5600 4-4 document number: 70034 s-52880erev. c, 28-apr-97
test conditions unless specified a suffix 55 to 125 c b suffix 25 to 85 c parameter symbol v+ = 15 v, v = 15 v, v l = 5 v v r = 0 v, v in = 0.8 v or 2 v f temp b typ c min d max d min d max d unit analog switch analog signal range e v analog full 7.5 15 7.5 15 v drain-source on-resistance r ds(on) i s = 10 ma, v d = 7.5 v room full 18 30 60 50 75 source off lk c t i s(off) v s = 10 v, v d = 10 v v+ = 10 v, v = 20 v room hot 0.06 1 100 5 100 a leakage current i s(off) v s = 7.5 v, v d = 7.5 v room hot 0.1 1 100 5 100 a drain off lk c t i d(off) v s = 10 v, v d = 10 v v+ = 10 v, v = 20 v room hot 0.05 1 100 5 100 na leakage current i d(off) v s = 7.5 v, v d = 7.5 v room hot 0.06 1 100 5 100 channel on leakage current i d(on) v d = v s = 7.5 v room hot 0.02 2 200 10 200 digital input input current with input voltage high i inh v in = 5 v room hot <0.01 10 20 10 20 a input current with input voltage low i inl v in = 0 v full 30 250 250 a dynamic characteristics turn-on time t on see switching time test circuit room 85 150 180 ns turn-off time t off see switching t ime t est circuit room 95 130 150 ns source-off capacitance c s(off) f1mh v s = 5 v, i d = 0 room 9 f drain-off capacitance c d(off) f = 1 mhz v d = 5 v, i s = 0 room 6 pf channel-on capacitance c d(on) v d = v s = 0 v room 14 off isolation oirr f = 1 mhz, r l = 75 room >50 db power supplies positive supply current i+ v0v5v room 0.6 1.5 1.5 a negative supply current i v in = 0 v , or 5 v room 2.7 5 5 ma logic supply current i l v in = 0 v , or 5 v room 3.1 4.5 4.5 ma reference supply current i r room 1 2 2 notes: a. refer to process option flowchart. b. room = 25 c, full = as determined by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. guaranteed by design, not subject to production test. f. v in = input voltage to perform proper function.
dg189/190/191 vishay siliconix document number: 70034 s-52880erev. c, 28-apr-97 www.vishay.com faxback 408-970-5600 4-5

test conditions unless specified a suffix 55 to 125 c b suffix 25 to 85 c parameter symbol v+ = 15 v, v = 15 v, v l = 5 v v r = 0 v, v in = 0.8 v or 2 v f temp b typ c min d max d min d max d unit analog switch analog signal range e v analog full 10 15 10 15 v drain-source on-resistance r ds(on) i s = 10 ma, v d = 7.5 v room full 35 75 150 100 150 source off lk c t i s(off) v s = 10 v, v d = 10 v v+ = 10 v, v = 20 v room hot 0.05 1 100 5 100 a leakage current i s(off) v s = 10 v, v d = 10 v room hot 0.07 1 100 5 100 a drain off lk c t i d(off) v s = 10 v, v d = 10 v v+ = 10 v, v = 20 v room hot 0.04 1 100 5 100 na leakage current i d(off) v s = 10 v, v d = 10 v room hot 0.05 1 100 5 100 channel on leakage current i d(on) v d = v s = 10 v room hot 0.03 2 200 10 200 digital input input current with input voltage high i inh v in = 5 v room hot <0.01 10 20 10 20 a input current with input voltage low i inl v in = 0 v full 30 250 250 a dynamic characteristics turn-on time t on see switching time test circuit room 120 250 300 ns turn-off time t off see switching t ime t est circuit room 100 130 150 ns source-off capacitance c s(off) f1mh v s = 5 v, i d = 0 room 9 f drain-off capacitance c d(off) f = 1 mhz v d = 5 v, i s = 0 room 6 pf channel-on capacitance c d(on) v d = v s = 0 v room 14 off isolation oirr f = 1 mhz, r l = 75 room >50 db positive supply current i+ v0v5v room 0.6 1.5 1.5 a negative supply current i v in = 0 v , or 5 v room 2.7 5 5 ma logic supply current i l v in = 0 v , or 5 v room 3.1 4.5 4.5 ma reference supply current i r room 1 2 2 notes: a. refer to process option flowchart. b. room = 25 c, full = as determined by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. guaranteed by design, not subject to production test. f. v in = input voltage to perform proper function.
dg189/190/191 vishay siliconix www.vishay.com faxback 408-970-5600 4-6 document number: 70034 s-52880erev. c, 28-apr-97
, i, i+, i (ma) i lr a) i in (m i in vs. v in and temperature supply current vs. temperature temperature ( c) temperature ( c) 5 4 3 2 1 0 55 35 15 5 25 45 65 85 105 125 0 100 80 60 40 20 55 35 15 5 25 45 65 85 105 125 i l i+ i r i i inl i inh v inl = 0 v inh = 5 v (ns) t on ,t off temperature ( c) switching time vs. v d and temperature (dg189) r ds(on) vs. temperature temperature ( c) r ds(on) () 100 1 50 25 0 25 50 75 100 125 10 230 90 55 35 15 5 25 45 65 85 105 125 210 190 170 150 130 110 v d = 7.5 v i s = 10 ma t off t on dg189 dg190 dg191 v d = 7.5 v v d = 7.5 v leakage vs. temperature (dg189) switching time vs. v d and temperature (dg190/191) (na) i , i sd (ns) t on ,t off temperature ( c) temperature ( c) 100 0.1 25 45 65 85 105 125 10 1 i d(on) i d(off) i s(off) v+ = 10 v v = 20 v v l = 5 v v r = 0 130 50 55 35 15 5 25 45 65 85 105 125 120 110 100 90 80 70 60 t off t on v d = 7.5 v v d = 7.5 v
dg189/190/191 vishay siliconix document number: 70034 s-52880erev. c, 28-apr-97 www.vishay.com faxback 408-970-5600 4-7
(pf) c s, d i d(off) vs. temperature (dg190/191) (na) i d temperature ( c) 100 10 1 0.1 25 45 65 85 105 125 b suffix a suffix capacitance vs. v d or v s (dg189) v d or v s drain or source voltage (v) 30 26 22 18 14 10 8 4 0 4 8 c d(off) c s(off) c d(on) f = 1 mhz v+ = 10 v, v = 20 v v d = 10 v, v s = 10 v iso (db) (pf) c s, d off isolation vs. frequency capacitance vs. v d or v s (dg190/191) v d or v s drain or source voltage (v) f frequency (hz) 100 90 80 70 60 50 40 30 20 10 0 10 5 10 6 10 7 10 8 v+ = 15 v, v = 15 v v r = 0, v l = 5 v r l = 75 v in 220 mv rms dg189 dg190/191 20 18 16 14 12 10 8 6 4 2 0 10 8 6 4 2 0 2 4 6 8 10 c d(off) c s(off) c d(on) capacitance is measured from test terminal to common. v inl = 0.8 v v inh = 2 v f = 1 mhz
dg189/190/191 vishay siliconix www.vishay.com faxback 408-970-5600 4-8 document number: 70034 s-52880erev. c, 28-apr-97 feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform. figure 2. switching time logic input switch output t off t on t r <10 ns t f <10 ns 90% 50% 0 v 3 v 0 v 0 v 90% 3 v 3 v v l v v+ in c l 100 pf r l 1 k d 1 v o s 3 s 1 v s2 v s1 15 v +15 v +5 v c l (includes fixture and stray capacitance) t on : v s = 3 v t off :v s = 3 v v r d 3 v out v s x r l r l r ds(on)
switch v+ positive supply voltage (v) v negative supply voltage (v) v l logic supply voltage (v) v r reference supply voltage (v) v in logic input voltage v inh(min) /v inl(max ) (v) v s analog voltage range (v) dg189 dg190 15 b 10 12 15 20 12 5 5 5 gnd gnd gnd 2.0/0.8 2.0/0.8 2.0/0.8 7.5 to 15 12.5 to 10 4.5 to 12 dg191 15 b 10 12 15 20 12 5 5 5 gnd gnd gnd 2.0/0.8 2.0/0.8 2.0/0.8 10 to 15 15 to 10 7 to 12 notes: a. application hints are for design aid only, not guaranteed and not subject to production testing. b. electrical parameter chart based on v+ = 15 v, v l = 5 v, v r = gnd

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