u440/441 siliconix p-37405erev. c, 04-jul-94 1 matched n-channel jfet pairs product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i g typ (pa) v gs1 v gs2 typ (mv) u440 1 to 6 25 4.5 1 10 U441 1 to 6 25 4.5 1 20 features benefits applications two-chip design high slew rate low offset/drift voltage low gate leakage: 1 pa low noise high cmrr: 85 db. minimum parasitics ensuring maximum high-frequency performance improved op amp speed, settling time accuracy minimum input error/trimming requirement insignificant signal loss/error voltage high system sensitivity minimum error with large input signal wideband differential amps high-speed, temp-compensated, single-ended input amps high-speed comparators impedance converters description the u440/441 are matched pairs of jfets mounted in a single to-71 package. this two-chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. these devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. the hermetically-sealed to-71 package is available with full military screening per mil-s-19500 (see military information). for similar products in so-8 packaging see the sst440/sst441 data sheet. for low-noise opions, see the sst/u401 series data sheet. for low-leakage alternatives, see the u421/423 data sheet. to-71 top view g 1 s 1 d 1 g 2 d 2 s 2 1 2 3 6 5 4 absolute maximum ratings gate-drain, gate-source voltage 25 v . . . . . . . . . . . . . . . . . . . . . . . . gate-gate voltage 50 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 o from case for 10 sec.) 300 c . . . . . . . . . . . . . storage temperature 65 to 200 c . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature 55 to 150 c . . . . . . . . . . . . . . . . . . power dissipation : per side a 250 mw . . . . . . . . . . . . . . . . . total b 500 mw . . . . . . . . . . . . . . . . . . . . notes a. derate 2 mw/ c above 25 c b. derate 4 mw/ c above 25 c updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70251.
u440/441 2 siliconix p-37405erev. c, 04-jul-94 specifications a limits u440 U441 parameter symbol test conditions typ b min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a, v ds = 0 v 35 25 25 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na 3.5 1 6 1 6 v saturation drain current c i dss v ds = 10 v, v gs = 0 v 15 6 30 6 30 ma gate reverse current i gss v gs = 15 v, v ds = 0 v 1 500 500 pa gate reverse current i gss t a = 125 c 2 na gate operating current i g v dg = 10 v, i d = 5 ma 1 500 500 pa gate operating current i g t a = 125 c 0.3 na gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs v ds = 10 v, i d = 5 ma 6 4.5 9 4.5 9 ms common-source output conductance g os s f = 1 khz 70 200 200 s common-source input capacitance c iss v ds = 10 v, i d = 5 ma 3 pf common-source reverse transfer capacitance c rss s f = 1 mhz 1 pf equivalent input noise voltage e n v ds = 10 v, i d = 5 ma f = 10 khz 4 nv M hz matching differential gate-source voltage
v dg = 10 v, i d = 5 ma 6 10 20 mv gate-source voltage differential change with temperature
v dg = 10 v, i d = 5 ma t a = 55 to 125 c 20 v/ c saturation drain current ratio d
v ds = 10 v, v gs = 0 v 0.97 transconductance ratio d
v ds = 10 v, i d = 5 ma f = 1 khz 0.97 common mode rejection ratio cmrr v dg = 5 to 10 v, i d = 5 ma 85 db notes a. t a = 25 c unless otherwise noted. nzfd b. typical values are for design aid only, not guaranteed nor subject to production testing. c. pulse test: pw 300 s duty cycle 3%. d. assumes smaller value in the numerator.
u440/441 siliconix p-37405erev. c, 04-jul-94 3 typical characteristics 50 0 10 8 2 40 10 0 20 16 4 0 30 20 12 8 4 6 0 4 16 20 812 drain current and transconductance vs. gate-source cutoff voltage v gs(off) gate-source cutoff voltage (v) saturation drain current (ma) i dss i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz g fs i dss g fs forward transconductance (ms) gate leakage current v dg drain-gate voltage (v) 0.1 pa 10 pa 1 pa i g(on) @ i d i gss @ 25 c t a = 125 c 10 ma 1 ma t a = 25 c i gss @ 125 c 1 ma i d = 10 ma gate leakage i g 10 068 210 8 6 2 0 4 4 output characteristics v ds drain-source voltage (v) drain current (ma) i d v gs = 0 v 0.2 v 0.4 v 0.6 v 0.8 v 1.0 v 1.2 v v gs(off) = 2 v 5 0 0.2 0.8 1 4 1 0 2 3 0.4 0.6 output characteristics v ds drain-source voltage (v) drain current (ma) i d 0.2 v 0.4 v 0.6 v 0.8 v 1.0 v 1.2 v v gs = 0 v v gs(off) = 2 v 15 0 0.2 0.8 1 12 3 0 9 6 0.4 0.6 output characteristics v ds drain-source voltage (v) drain current (ma) i d v gs = 0 v 1.5 v 0.5 v 2.5 v 1.0 v 3.0 v 3.5 v 2.0 v v gs(off) = 5 v 30 08 210 24 6 0 18 12 46 output characteristics v ds drain-source voltage (v) drain current (ma) i d v gs = 0 v 0.5 v 2.5 v 2.0 v 3.0 v 3.5 v 1.0 v 1.5 v v gs(off) = 5 v 100 pa 1 na 10 na 100 na
u440/441 4 siliconix p-37405erev. c, 04-jul-94 typical characteristics (cont'd) 10 0 0.4 1.6 2 8 2 0 10 0 1.2 1.6 0.4 2 8 4 2 0 6 4 6 0.8 1.2 0.8 30 045 1 24 6 0 18 12 2 3 10 5 4 1 0 8 2 0 6 4 2 3 transfer characteristics v gs gate-source voltage (v) drain current (ma) i d t a = 55 c v gs(off) = 2 v 125 c transconductance vs. gate-source voltage v gs gate-source voltage (v) t a = 55 c 125 c transfer characteristics t a = 55 c 125 c v gs gate-source voltage (v) g fs forward transconductance (ms) t a = 55 c transconductance vs. gate-source voltage g fs forward transconductance (ms) drain current (ma) i d v gs gate-source voltage (v) 125 c 110 0.1 50 40 20 10 0 30 i d drain current (ma) v gs(off) = 2 v a v voltage gain circuit voltage gain vs. drain current 1 10 100 200 160 80 40 0 120 v gs(off) = 2 v t a = 25 c v gs(off) = 5 v on-resistance vs. drain current i d drain current (ma) r l 10 v i d assume v dd = 15 v, v ds = 5 v a v g fs r l 1 r l g os v gs(off) = 5 v v ds = 10 v v gs(off) = 5 v v ds = 10 v v gs(off) = 2 v v ds = 10 v f = 1 khz v gs(off) = 5 v v ds = 10 v f = 1 khz 25 c 25 c 25 c 25 c r ds(on) drain-source on-resistance ( )
u440/441 siliconix p-37405erev. c, 04-jul-94 5 typical characteristics (cont'd) 10 0 16 20 4 8 2 0 5 0 12 20 16 4 4 2 1 0 6 4 3 8 12 8 100 10 1 0.1 100 1000 100 10 1 0.1 100 1000 common-source input capacitance vs. gate-source voltage v ds = 0 v f = 1 mhz v gs gate-source voltage (v) v ds = 10 v common-source reverse feedback capacitance vs. gate-source voltage v ds = 0 v f = 1 mhz v gs gate-source voltage (v) reverse feedback capacitance (pf) c rss v ds = 10 v (ms) t a = 25 c v ds = 10 v i d = 10 ma g ig b ig input admittance f frequency (mhz) g is b is f frequency (mhz) (ms) t a = 25 c v ds = 10 v i d = 10 ma b fg forward admittance b fs g fs input capacitance (pf) c iss 200 500 200 500 10 1 0.1 0.01 100 1000 100 10 1 0.1 100 1000 (ms) t a = 25 c v ds = 10 v i d = 10 ma b rg g rg g rg reverse admittance f frequency (mhz) b rs g rs (ms) t a = 25 c v ds = 10 v i d = 10 ma g og, g os b og, b os output admittance f frequency (mhz) 200 500 200 500 v ds = 5 v v ds = 5 v g fg
u440/441 6 siliconix p-37405erev. c, 04-jul-94 typical characteristics (cont'd) 10 100 1 k 100 k 10 k 50 40 10 0 150 120 90 30 0 0.1 1 10 60 30 20 equivalent input noise voltage vs. frequency i d = 1 ma v ds = 10 v f frequency (hz) output conductance vs. drain current i d drain current (ma) 125 c 200 0 10 8 2 160 40 0 0.1 110 10 8 2 0 200 160 120 40 0 120 80 80 4 6 6 4 on-resistance and output conductance vs. gate-source cutoff voltage v gs(off) gate-source cutoff voltage (v) r ds @ i d = 1 ma, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v f = 1 khz r ds g os common-source forward transconductance vs. drain current i d drain current (ma) g fs forward transconductance (ms) t a = 55 c 125 c v gs(off) = 5 v v ds = 10 v f = 1 khz v gs(off) = 5 v v ds = 10 v f = 1 khz i d = 10 ma t a = 55 c 25 c 25 c nv e n / hz ) ( noise voltage s) g output conductance ( s) g output conductance ( r ds(on) drain-source on-resistance ( )
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