vishay siliconix si1563dh document number: 71963 s10-1054-rev. b, 03-may-10 www.vishay.com 1 complementary 20 v (d-s) low-threshold mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets: 1.8 v rated ? thermally enhanced sc-70 package ? fast switching ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices product summary v ds (v) r ds(on) ( )i d (a) n-channel 20 0.280 at v gs = 4.5 v 1.28 0.360 at v gs = 2.5 v 1.13 0.450 at v gs = 1.8 v 1.00 p-channel - 20 0.490 at v gs = - 4.5 v - 1.00 0.750 at v gs = - 2.5 v - 0.81 1.10 at v gs = - 1.8 v - 0.67 sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top view s 1 g 1 d 2 d 1 g 2 s 2 marking code eb xx lot traceability and date code part # code yy ordering information: SI1563DH-T1-e3 (lead (pb)-free) SI1563DH-T1-ge3 (lead (pb)-free and halogen-free) d 1 s 1 g 1 n-channel p-channel d 2 s 2 g 2 notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol n-channel p-channel unit 5 s steady state 5 s steady state drain-source voltage v ds 20 - 20 v gate-source voltage v gs 8 8 continuous drain current (t j = 150 c) a t a = 25 c i d 1.28 1.13 - 1.00 - 0.88 a t a = 85 c 0.92 0.81 - 0.72 - 0.63 pulsed drain current i dm 4.0 - 3.0 continuous source current (diode conduction) a i s 0.61 0.48 - 0.61 - 0.48 maximum power dissipation a t a = 25 c p d 0.74 0.57 0.30 0.57 w t a = 85 c 0.38 0.30 0.16 0.3 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 5 s r thja 130 170 c/w steady state 170 220 maximum junction-to-foot (drain) steady state r thjf 80 100
www.vishay.com 2 document number: 71963 s10-1054-rev. b, 03-may-10 vishay siliconix si1563dh notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 100 a n-ch 0.45 1 v v ds = v gs , i d = - 100 a p-ch - 0.45 1 gate-body leakage i gss v ds = 0 v, v gs = 8 v n-ch 100 na p-ch 100 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v n-ch 1 a v ds = - 16 v, v gs = 0 v p-ch - 1 v ds = 16 v, v gs = 0 v, t j = 85 c n-ch 5 v ds = - 16 v, v gs = 0 v, t j = 85 c p-ch - 5 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v n-ch 2 a v ds - 5 v, v gs = - 4.5 v p-ch - 2 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 1.13 a n-ch 0.220 0.280 v gs = - 4.5 v, i d = - 0.88 a p-ch 0.400 0.490 v gs = 2.5 v, i d = 0.99 a n-ch 0.281 0.360 v gs = - 2.5 v, i d = - 0.71 a p-ch 0.610 0.750 v gs = 1.8 v, i d = 0.20 a n-ch 0.344 0.450 v gs = - 1.8 v, i d = - 0.20 a p-ch 0.850 1.10 forward transconductance a g fs v ds = 10 v, i d = 1.13 a n-ch 2.6 s v ds = - 10 v, i d = - 0.88 a p-ch 1.5 diode forward voltage a v sd i s = 0.48 a, v gs = 0 v n-ch 0.8 1.2 v i s = - 0.48 a, v gs = 0 v p-ch - 0.8 - 1.2 dynamic b total gate charge q g n-channel v ds = 10 v, v gs = 4.5 v, i d = 1.13 a p-channel v ds = - 10 v, v gs = - 4.5 v, i d = - 0.88 a n-ch 1.25 2 nc p-ch 1.2 1.8 gate-source charge q gs n-ch 0.21 p-ch 0.3 gate-drain charge q gd n-ch 0.3 p-ch 0.21 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 10 v, r l = 20 i d ? 0.5 a, v gen = 4.5 v, r g = 6 p-channel v dd = - 10 v, r l = 20 i d ? - 0.5 a, v gen = - 4.5 v, r g = 6 n-ch 15 25 ns p-ch 18 30 rise time t r n-ch 22 35 p-ch 25 40 turn-off delay time t d(off) n-ch 25 40 p-ch 15 25 fall time t f n-ch 12 20 p-ch 12 20 reverse recovery time t rr i f = 0.48 a, di/dt = 100 a/s n-ch 30 60 p-ch 30 60
document number: 71963 s10-1054-rev. b, 03-may-10 www.vishay.com 3 vishay siliconix si1563dh n-channel typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0.0 0.5 1.0 1.5 2.0 01234 v gs = 5 v thru 2 v 1.5 v v ds - drain-to-source voltage (v) - drain current (a) i d 1 v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.5 1.0 1.5 2.0 v gs = 4.5 v v gs = 2.5 v - on-resistance ( ) r ds(on) i d - drain current (a) v gs = 1.8 v 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 v ds = 10 v i d = 1.28 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 25 c t c = - 55 c 125 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 40 80 120 160 048121620 c rss c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 1.13 a t j - junction temperature (c) (normalized) - on-resistance r ds(on)
www.vishay.com 4 document number: 71963 s10-1054-rev. b, 03-may-10 vishay siliconix si1563dh n-channel typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 1.0 1.2 0.1 1 2 0 0.2 0.6 0.8 v sd - source-to-drain voltage (v) - source current (a) i s t j = 25 c t j = 150 c 0.4 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 i d = 100 a variance (v) v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012345 i d = 1.13 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 1 5 power (w) time (s) 3 4 1 600 10 0.1 0.01 2 100 safe operating area, junction-to-ambient 10 1 0.1 1 10 100 0.01 t a = 25 c single pulse 0.1 i d(on) limited bvdss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 * ds(on) limited by r v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied - drain current (a) i d i dm limited p(t) = 10, dc
document number: 71963 s10-1054-rev. b, 03-may-10 www.vishay.com 5 vishay siliconix si1563dh n-channel typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 170 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.02 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.02
www.vishay.com 6 document number: 71963 s10-1054-rev. b, 03-may-10 vishay siliconix si1563dh p-channel typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01234 v gs thru 3.5 v 1.5 v v ds - drain-to-source voltage (v) - drain current (a) i d 2 v 2.5 v 1 v 3 v = 5 v 0.0 0.4 0.8 1.2 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 4.5 v v gs = 2.5 v - on-resistance ( ) r ds(on) i d - drain current (a) v gs = 1.8 v 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 v ds = 10 v i d = 0.9 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t c = - 55 c 125 c v gs - gate-to-source voltage (v) - drain current (a) i d 25 c 0 40 80 120 160 024681012 c rss c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 0.88 a t j - junction temperature (c) (normalized) - on-resistance r ds(on)
document number: 71963 s10-1054-rev. b, 03-may-10 www.vishay.com 7 vishay siliconix si1563dh p-channel typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 1.0 1.2 0.1 1 2 0 0.2 0.6 0.8 v sd - source-to-drain voltage (v) - source current (a) i s t j = 25 c t j = 150 c 0.4 - 0.15 - 0.10 - 0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30 - 50 - 25 0 25 50 75 100 125 150 i d = 100 a variance (v) v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.0 0.4 0.8 1.2 1.6 012345 i d = 0.88 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 1 5 power (w) time (s) 3 4 1 600 10 0.1 0.01 2 100 safe operating area, junction-to-ambient 10 1 0.1 1 10 100 0.01 t a = 25 c single pulse dc 0.1 i d(on) limited * ds(on) limited by r bvdss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 i dm limited v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified - drain current (a) i d p(t) = 10
www.vishay.com 8 document number: 71963 s10-1054-rev. b, 03-may-10 vishay siliconix si1563dh p-channel typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71963 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 170 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.02 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.02
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