? semiconductor components industries, llc, 2001 february, 2001 rev. 1 1 publication order number: nimd6302r2/d nimd6302r2 product preview smartdiscretes 5 amps, 30 volts self protected with current sense nchannel so8, dual smartdiscretes devices are an advanced series of power mosfets which utilize on semiconductor's latest mosfet technology process to achieve the lowest possible onresistance per silicon area while incorporating smart features. they are capable of withstanding high energy in the avalanche and commutation modes. the avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. this new smartdiscretes device features an integrated gatetosource clamp for esd protection. also, this device features a sense fet for current monitoring. ? ultra low r ds(on) provides higher efficiency and extends battery life ? i dss specified at elevated temperature ? avalanche energy specified ? current sense fet ? esd protected, main fet and sensefet absolute maximum ratings stresses beyond those listed may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in this specification is not implied. exposure to absolute maximum rated conditions for extended peri- ods may affect device reliability. main mosfet maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 30 vdc draintogate voltage (r gs = 1.0 m ) v dgr 30 vdc gatetosource voltage v gs 16 vdc single pulse draintosource avalanche energy (note 1.) (v dd = 25 vdc, v gs = 10 vdc, v ds = 20 vdc, i l = 15 apk, l = 10 mh, r g = 25 w ) e as 250 mj drain current continuous @ t a = 25 c continuous @ t a = 100 c (note 1.) single pulse (t p 10 m s) i d i d i dm 6.5 4.4 33 adc adc apk maximum power dissipation (t a = 25 c) p d tbd w 1. switching characteristics are independent of operating junction temperatures this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. 5.0 amperes 30 volts r ds(on) = 50 m w device package shipping ordering information nimd6302r2 soic8 tbd soic8 case 751 style 19 http://onsemi.com sense main fet drain source main source sense gate mirror 1 drain 1 mirror 2 drain 2 source 1 gate 1 source 2 gate 2 (top view) marking diagram tbd tbd = specific device code 1 2 3 4 5 6 7 8
nimd6302r2 http://onsemi.com 2 main mosfet electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 30 35 30 vdc mv/ c zero gate voltage drain current (v ds = 30 vdc, v gs = 0 vdc) (v ds = 30 vdc, v gs = 0 vdc, t j = 125 c) i dss 10 100 m adc gatebody leakage current (v gs = 12 vdc, v ds = 0 vdc) i gss 22 32 m adc on characteristics gate threshold voltage (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 1.0 5.0 2.0 vdc mv/ c static draintosource onresistance (note 2.) (v gs = 10 vdc, i d = 3.0 adc, t j @ 25 c) (v gs = 10 vdc, i d = 3.0 adc, t j @ 125 c) r ds(on) 50 tbd m w forward transconductance (note 2.) (v ds = 6.0 vdc, i d = 15 adc) (v ds = 15 vdc, i d = 15 adc) g fs 7.4 5.5 mhos dynamic characteristics (note 3.) input capacitance (v 60vd v 0vd c iss 380 600 pf output capacitance (v ds = 6.0 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 272 350 transfer capacitance f = 1 . 0 mhz) c rss 93 200 switching characteristics (note 3.) turnon delay time t d(on) 8.4 ns rise time (v dd = 6.0 vdc, i d = 3.0 adc, t r 24 turnoff delay time (v dd 6 . 0 vdc , i d 3 . 0 adc , v gs = 10 vdc, r g = 4.7 w ) t d(off) 18 fall time t f 5.0 gate charge q t 11.3 nc (v ds = 6.0 vdc, i d = 3.0 adc, q 1 2.8 (v ds 6 . 0 vdc , i d 3 . 0 adc , v gs = 10 vdc) q 2 1.9 q 3 2.2 sourcedrain diode characteristics forward onvoltage (note 2.) (i s = 3.0 adc, v gs = 0 vdc) v sd 0.76 vdc forward onvoltage (notes 2., 3.) (i s = 3.0 adc, v gs = 0 vdc, t j = 125 c) s 0.62 reverse recovery time (note 3.) t rr 24.7 ns (i s 3 0 adc v gs 0 vdc t a 13 (i s = 3.0 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 12 reverse recovery stored charge (note 3.) di s /dt = 100 a/ m s) q rr 0.018 c mirror mosfet characteristics (t j = 25 c unless otherwise noted) main/mirror mosfet current ratio (v ds = 6.0 vdc, i dmain = 25 ma) (v ds = 6.0 vdc, i dmain = 25 ma, t a = 125 c) i rat 192 192 200 200 208 208 main/mirror current ratio variation versus current and temperature (v ds = 6.0 vdc, i dmain = 25 ma, t a = 25 to 125 c) i rat 7.5 3.0 +7.5 % gatebody leakage current v ds = 0 vdc, v gs = 3.0 vdc i gss 100 nadc 2. pulse test: pulse width = 300 m s, duty cycle = 2%. 3. switching characteristics are independent of operating junction temperatures.
nimd6302r2 http://onsemi.com 3 package dimensions style 19: pin 1. source 1 2. gate 1 3. source 2 4. gate 2 5. drain 2 6. mirror 2 7. drain 1 8. mirror 1 seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 x y g m y m 0.25 (0.010) z y m 0.25 (0.010) z s x s m so8 case 75107 issue w
nimd6302r2 http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. nimd6302r2/d smartdiscretes is a trademark of semiconductor components industries, llc (scillc). north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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