? semiconductor components industries, llc, 2001 february, 2001 rev. 1 1 publication order number: nib64045l/d nib6404-5l preferred device product preview smartdiscretes 52 amps, 40 volts self protected with temperature sense nchannel d 2 pak smartdiscretes devices are an advanced series of power mosfets which utilize on semiconductor's latest mosfet technology process to achieve the lowest possible onresistance per silicon area while incorporating additional features such as clamp diodes. they are capable of withstanding high energy in the avalanche and commutation modes. the avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. this new smartdiscretes device features integrated gatetosource diodes for esd protection, and gatetodrain clamp for overvoltage protection. also, this device integrates a sense diode for temperature monitoring. ? ultra low r ds(on) provides higher efficiency ? i dss specified at elevated temperature ? avalanche energy specified ? overvoltage protection ? temperature sense diode ? esd human body model discharge sensitivity class 3 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 40 vdc draintogate voltage v dgr 40 vdc gatetosource voltage v gs 10 vdc operating and storage temperature range t j , t stg 55 to +175 c single pulse draintosource avalanche energy starting t j = 25 c (note 1.) (v dd = 25 vdc, v gs = 5.0 vdc, i l(pk) = 25 a, l = 1.4 mh, r g = 10 k w ) e as 450 mj drain current continuous @ t a = 25 c continuous @ t a = 140 c single pulse (t p 10 m s) i d i d i dm 52 25 200 adc total power dissipation (t 10 seconds) linear derating factor p d @ t a = 25 c 115 0.76 w w/ c thermal resistance junctiontocase junctiontoambient (note 1.) r q jc r q ja 1.3 80 c/w 1. measured while surface mounted to an fr4 board using the minimum recommended pad size. typical value is 64 c/w. this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. 52 amperes 40 volts r ds(on) = 20 m w device package shipping ordering information nib64045l d 2 pak tbd d 2 pak case 936d plastic http://onsemi.com preferred devices are recommended choices for future use and best overall value. d s g t1 t2 marking diagram tbd = specific device code tbd
nib64045l http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (note 2.) (v gs = 0 vdc, i d = 250 m adc, 55 c < t j < 175 c) temperature coefficient (negative) v (br)dss 40 51 7.0 55 vdc mv/ c gatetosource clamp voltage (note 2.) (v gs = 0 vdc, i g = 20 m adc) v (br)gss 10 13 20 vdc zero gate voltage drain current (v ds = 35 vdc, v gs = 0 vdc) (v ds = 15 vdc, v gs = 0 vdc) (v ds = 35 vdc, v gs = 0 vdc, t j = 125 c) i dss 1.1 0.2 4.0 100 2.0 20 m adc gatebody leakage current (v gs = 5.0 vdc, v ds = 0 vdc) i gss 0.02 1.0 m adc on characteristics (note 2.) gate threshold voltage (note 2.) (v ds = v gs , i d = 1.0 madc) threshold temperature coefficient (negative) v gs(th) 1.0 1.7 4.5 2.0 vdc mv/ c static draintosource onresistance (note 2.) (v gs = 5.0 vdc, i d = 20 adc) r ds(on) 18 20 m w forward transconductance (v ds = 15 vdc, i d = 10 adc) (note 2.) g fs tbd 34 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 1720 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 525 transfer capacitance f = 1 . 0 mhz) c rss 120 switching characteristics (note 3.) turnon delay time t d(on) 16 ns rise time (v dd = 32 vdc, i d = 25 adc, v gs =50vdc t r 263 turnoff delay time v gs = 5.0 vdc, r g = 10 w ) (note 2.) t d(off) 149 fall time r g 10 w ) (note 2.) t f 345 gate charge q t 29 nc (v ds = 32 vdc, i d = 25 adc, q 1 6.0 (v ds 32 vdc , i d 25 adc , v gs = 5.0 vdc) (note 2.) q 2 16 q 3 2.0 sourcedrain diode characteristics forward onvoltage (i s = 20 adc, v gs = 0 vdc) (note 2.) (i s = 20 adc, v gs = 0 vdc, t j = 125 c) v sd 0.876 0.746 1.2 vdc reverse recovery time t rr 60 ns (i s = 25 adc, v gs = 0 vdc, t a 29 (i s 25 adc , v gs 0 vdc , di s /dt = 100 a/ m s) (note 2.) t b 32 reverse recovery stored charge q rr 80 pc temperature sense diode characteristics forward (reverse) onvoltage (i f(r) = 250 m adc) (note 2.) (i f(r) = 250 m adc, t j = 125 c) v ac(acr) 715 743 570 775 mvdc temperature coefficient (negative) i f(r) = 250 m adc, t j = 160 c v ftc 1.57 1.71 1.85 mv/ c forward voltage hysteresis i f(r) = 125 m adc to 250 m adc v hys 25 37 50 mvdc 2. pulse test: pulse width 300 m s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
nib64045l http://onsemi.com 3 typical electrical characteristics v ds , draintosource voltage (volts) i d , drain current (amps) figure 1. onregion characteristics figure 2. transfer characteristics figure 3. onresistance versus drain current and temperature figure 4. onresistance versus drain current and gate voltage v gs = 2.5 v 4.5 v t j = 25 c 50 25 20 15 10 5.0 0 45 40 35 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3.0 v 3.5 v 4.0 v 5.0 v v gs , gatetosource voltage (volts) i d , drain current (amps) t j = 175 c 25 20 15 10 5.0 0 40 35 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 55 c 25 c i d , drain current (amps) 50 25 20 15 10 5.0 0 45 40 35 30 01020304050 r ds(on) , draintosource resistance (m ) i d , drain current (amps) 50 25 20 15 10 5.0 0 45 40 35 30 01020304050 r ds(on) , draintosource resistance (m ) t j = 175 c 25 c 55 c v gs = 3.0 v 3.5 v 4.0 v 10 v t j = 25 c 5.0 v c oss c rss t j , junction temperature ( c) figure 5. onresistance variation with temperature figure 6. capacitance variation v gs = 5.0 v i d = 20 a 2.2 1.4 1.2 1.0 0.8 0.6 2.0 1.8 1.6 50 0 50 100 150 200 c, capacitance (pf) 2500 2000 1500 1000 500 0 4500 3500 3000 0 5.0 10 15 20 25 30 r ds(on) , draintosource resistance (normalized) 4000 v ds , draintosource voltage (volts) v gs = 0 v f = 1.0 mhz t j = 25 c c iss
nib64045l http://onsemi.com 4 typical electrical characteristics figure 7. capacitance variation figure 8. diode forward voltage versus current v gs , gatetosource voltage (volts) 5000 2500 2000 1500 1000 500 0 4500 4000 3500 3000 0 2.0 4.0 6.0 8.0 10 v sd , sourcetodrain voltage (volts) 20 10 8.0 6.0 4.0 2.0 0 18 16 14 12 0 0.1 0.2 0.3 0.4 0.5 i s , source current (a) figure 9. sense diode forward voltage variation with temperature figure 10. sense diode temperature coefficient variation with temperature t j , junction temperature ( c) 1.0 0.6 0.5 0.4 0.3 0.9 0.8 0.7 100 50 0 50 100 150 v f , forward voltage (v) t j , junction temperature ( c) 1.8 1.9 2.0 2.1 50 0 50 100 150 v ftc , temperature coefficient (mv/ c) 0.6 0.7 0.8 0.9 1.0 1.4 1.5 1.6 1.7 1.3 c, capacitance (pf) 200 c oss t j = 25 c c iss v ds = 0 v f = 1 mhz t j = 175 c 25 c i f(r) = 250 a i f(r) = 500 a 250 a 125 a 50 a 25 a
nib64045l http://onsemi.com 5 package dimensions 5 ref notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. tab contour optional within dimensions a and k. 4. dimensions u and v establish a minimum mounting surface for terminal 6. 5. dimensions a and b do not include mold flash or gate protrusions. mold flash and gate protrusions not to exceed 0.025 (0.635) maximum. dim a min max min max millimeters 0.386 0.403 9.804 10.236 inches b 0.356 0.368 9.042 9.347 c 0.170 0.180 4.318 4.572 d 0.026 0.036 0.660 0.914 e 0.045 0.055 1.143 1.397 g 0.067 bsc 1.702 bsc h 0.539 0.579 13.691 14.707 j 0.125 max 3.175 max k 0.000 0.010 0.000 0.254 m 0.088 0.102 2.235 2.591 n 0.018 0.026 0.457 0.660 p 0.058 0.078 1.473 1.981 r 5 ref s 0.116 ref 2.946 ref u 0.200 min 5.080 min v 0.250 min 6.350 min l 0.050 ref 1.270 ref a 123 k b s h d g c e m l p n r v u terminal 6 45 m 0.010 (0.254) t t optional chamfer j dpak case 936d03 issue b
nib64045l http://onsemi.com 6 notes
nib64045l http://onsemi.com 7 notes
nib64045l http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. nib64045l/d smartdiscretes is a trademark of semiconductor components industries, llc (scillc). north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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