? semiconductor components industries, llc, 2002 january, 2002 rev. 1 1 publication order number: mbr835/d mbr835, mbr840, mbr845 preferred devices axial lead rectifiers . . . employing the schottky barrier principle in a large area metaltosilicon power diode. stateoftheart geometry features epitaxial construction with oxide passivation and metal overlap contact. ideally suited for use as rectifiers in lowvoltage, highfrequency inverters, free wheeling diodes, and polarity protection diodes. ? high current capability ? low stored charge, majority carrier conduction ? low power loss/high efficiency ? highly stable oxide passivated junction ? guardring for stress protection ? low forward voltage ? high surge capacity mechanical characteristics: ? case: epoxy, molded ? weight: 1.1 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 220 c max. for 10 seconds, 1/16 from case ? shipped in plastic bags, 500 per bag ? available tape and reeled, 1500 per reel, by adding a arl'' suffix to the part number ? polarity: cathode indicated by polarity band ? esd protection: human body model > 4000 v (class 3) esd protection: machine model > 400 v (class c) maximum ratings rating symbol max unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage mbr835 mbr840 mbr845 v rrm v rwm v r 35 40 45 v average rectified forward current t l = 75 c (psi jl = 12 c/w, p.c. board mounting, see note 2) i o 8.0 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 140 a operating and storage junction temperature range (reverse voltage applied) t j , t stg 65 to +125 c voltage rate of change (rated v r ) dv/dt 10 v/ns device package shipping ordering information http://onsemi.com axial lead case 26705 (do201ad) style 1 schottky barrier rectifiers 8.0 amperes preferred devices are recommended choices for future use and best overall value. mbr835 axial lead 500 units/bag mbr835rl axial lead 1500/tape & reel marking diagram mbr8xx mbr8xx = device code xx = 35, 40 or 45 mbr840 axial lead 500 units/bag mbr840rl axial lead 1500/tape & reel mbr845 axial lead 500 units/bag mbr845rl axial lead 1500/tape & reel
mbr835, mbr840, mbr845 http://onsemi.com 2 thermal characteristics characteristic symbol 0.9 in x 0.9 in copper pad size 6.75 in x 6.75 in copper pad size unit thermal resistance junctiontolead (see note 2 mounting data) thermal resistance junctiontoambient (see note 2 mounting data) r q jl r q ja 13 50 12 40 c/w electrical characteristics (t l = 25 c unless otherwise noted) characteristic symbol max unit maximum instantaneous forward voltage (note 1) (i f = 8.0 amps, t l = 25 c) v f 0.55 v maximum instantaneous reverse current @ rated dc voltage (note 1) t l = 25 c t l = 100 c i r 1.0 50 ma 1. pulse test: pulse width = 300 m s, duty cycle = 2.0%. figure 1. typical forward voltage v f , instantaneous voltage (volts) 30 10 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 figure 2. maximum forward voltage 0.1 figure 3. typical reverse current v r , reverse voltage (volts) 1e01 1e02 1e03 1e04 35 30 25 10 20 15 5 0 1e06 i f , instantaneous forward current (amps) i r , instantaneous reverse current (amps) 50 45 40 1e05 125 c 25 c 100 c 75 c 125 c 25 c 100 c 75 c v f , instantaneous voltage (volts) 30 10 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 i f , instantaneous forward current (amps) 125 c 25 c 100 c 75 c mbr845 v r , reverse voltage (volts) figure 4. typical capacitance f = 1 mhz t j = 25 c 100 10 1 0.1 c, capacitance (pf) 100 1000 10,000
mbr835, mbr840, mbr845 http://onsemi.com 3 r ja ( c/w) figure 5. r ja versus copper area see note 2 10 4 2 0 copper area (sq in) 30 t l , lead temperature ( c) figure 6. current derating lead square wave 140 40 20 0 i f , average forward current (amps) 0 i o , average forward current (amps) figure 7. forward power dissipation t j = 125 c 10 6 2 0 p fo , average power dissipation (watts) 0 35 40 45 50 55 60 65 70 75 8 6 80 60 100 120 1 2 3 4 5 6 7 8 9 dc r jl = 12 c/w 48 0.5 1 1.5 2 2.5 3 3.5 4 4.5 square wave dc note 2 e mounting data mounting method p.c. board with 6.75 sq. in. copper surface. board ground plane l = 3/8 0.1 t, time (sec) 100 1.0 0.001 10 1 0.1 0.0001 0.1 1000 figure 8. thermal response, junctiontoambient 0.2 0.01 single pulse p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 0.001 0.01 r(t), normalized effective transient thermal resistance d = 0.5 0.05 copper area = 0.271 sq. in. r ja = 61.8 c/w
mbr835, mbr840, mbr845 http://onsemi.com 4 package dimensions axial lead case 26705 (do201ad) issue g notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. cathode (polarity band) 2. anode 1 2 k a k d b dim min max min max millimeters inches a 0.287 0.374 7.30 9.50 b 0.189 0.209 4.80 5.30 d 0.047 0.051 1.20 1.30 k 1.000 --- 25.40 --- on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbr835/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
