data sheet
mos field effect transistor 3sk230 rf amp. for vhf/catv tuner n-channel silicon dual-gate mos field-effect transistor 4 pins mini mold 1993 document no. p10587ej3v0ds00 (3rd edition) date published november 1996 n printed in japan features the characteristic of cross-modulation is good. cm = 108 db m (typ.) @f = 470 mhz, g r = - 30 db low noise figure nf1 = 2.2 db typ. (@ = 470 mhz) nf2 = 0.9 db typ. (@ = 55 mhz) high power gain g ps = 19.5 db typ. (@ = 470 mhz) enhancement typ. suitable for use as rf amplifier in catv tuner. automatically mounting: embossed type taping small package: 4 pins mini mold package. (sc-61) absolute maximum ratings (t a = 25 c) drain to source voltage v dsx 18 v gate1 to source voltage v g1s 8(10) * 1 v gate2 to source voltage v g2s 8(10) * 1 v gate1 to drain voltage v g1d 18 v gate2 to drain voltage v g2d 18 v drain current i d 25 ma total power dissipation p d 200 mw channel temperature t ch 125 c storage temperature t stg - 55 to +125 c r l 3 10 k w precaution : avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltages or fields. package dimensions (unit: mm) 2.8
+0.2
?.3
1.5
+0.2
?.1
0.4
+0.1
?.05
0.4
+0.1
?.05
0.4
+0.1
?.05
0.6
+0.1
?.05
1.1
+0.2
?.1
0.16
+0.1
?.06
2.9?.2
(1.8)
0.85 0.95
(1.9)
2
3
1
4
0.8
0 to 0.1
5? 5? 5? 5? pin connections
1. source
2. drain
3. gate 2
4. gate 1
2 3sk230 electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions drain to source breakdown voltage bv dsx 18 v v g1s = v g2s = - 2 v, i d = 10 m a drain current i dsx 0.01 8.0 ma v ds = 6 v, v g2s = 4.5 v, v g1s = 0.75 v gate1 to source cutoff voltage v g1s(off) 0 +1.0 v v ds = 6 v, v g2s = 3 v, i d = 10 m a gate2 to source cutoff voltage v g2s(off) +0.6 +1.1 +1.6 v v ds = 6 v, v g1s = 3 v, i d = 10 m a gate1 reverse current i g1ss 20 na v ds = v g2s = 0, v g1s = 8 v gate2 reverse current i g2ss 20 na v ds = v g1s = 0, v g2s = 8 v forward transfer admittance | y fs |162024msv ds = 6 v, v g2s = 4.5 v, i d = 10 ma f = 1 khz input capacitance c iss 2.3 2.8 3.3 pf output capacitance c oss 0.9 1.2 1.5 pf reverse transfer capacitance c rss 0.015 0.03 pf power gain g ps 16.5 19.5 22.5 db noise figure 1 nf1 2.2 3.2 db noise figure 2 nf2 0.9 2.4 db v ds = 6 v, v g2s = 4.5 v, i d = 10 ma f = 55 mhz i dsx classification rank u1a u1b marking u1a u1b i dsx (ma) 0.01 to 3.0 1.0 to 8.0 v ds = 6 v, v g2s = 4.5 v, i d = 10 ma f = 1 mhz v ds = 6 v, v g2s = 4.5 v, i d = 10 ma f = 470 mhz
3 3sk230 characteristic curve (t a = 25 c) total power dissipation vs.
ambient temperature p t - total power dissipation - mw t a - ambient temperature - ? i d - drain current - ma v ds - drain to source voltage - v drain current vs.
drain to source voltage forward transfer admittance vs.
gate1 to source voltage |y fs | - forward transfer admittance - ms forward transfer admittance vs.
drain current i d - drain current - ma v ds = 6 v
f = 1 khz input capacitance vs.
gate2 to source voltage v ds = 6 v
f = 1 khz c iss - input capacitance - pf v g2s - gate2 to source voltage - v i d = 10 ma
(at v ds = 6 v
v g2s = 4.5 v)
f = 1 mh z 125 0 255075100 100 200 300 400 10 05 10 20 30 40 50 drain current vs.
gate1 to source voltage 0 5 10 15 20 25 101234 i d - drain current - ma 0 5 10 15 20 25 101234 v gis - gate1 to source voltage - v v gis - gate 1 to source voltage - v 0 1.0 2.0 3.0 4.0 1.0 2.0 3.0 4.0 5.0 5.0 |y fs | - forward transfer admittance - ms 4 8 16 24 32 40 0 8 12 16 20 v g2s = 4.5 v
free air v ds = 6 v
v g1s = 3 v 2.5 v 2.0 v 1.5 v 1.0 v 0.5 v v g2s = 5 v 4 v 3 v 2 v v g2s = 3.5 v 3.0 v 2.5 v 2.0 v 1.5 v v g2s = 6 v 5 v 4 v 3 v 2 v
4 3sk230 power gain and noise figure vs.
gate2 to source voltage
g ps - power gain - db
10
5
0
nf - noise figure - db
0
1.0
2.0
3.0
4.0
5.0
?.0
?.0
0
1.0
2.0
output capacitance vs.
gate2 to source voltage
v g2s - gate2 to source voltage - v
v g2s - gate2 to source voltage - v
c oss - output capacitance - pf
0
1.0
2.0
3.0
4.0
5.0
0.5
1.0
1.5
2.0
2.5
i d = 10 ma
(at v ds = 6 v
v g2s = 4.5 v)
f = 1 mh z
f = 470 mhz
i d = 10 ma
(at v ds = 6 v
v g2s = 4.5 v)
g ps
nf
s-parameter v ds = 6 v, v g2s = 4.5 v, i d = 10 ma, (zo = 50 w ) frequency s11 s21 s12 s22 mhz mag ang mag ang mag ang mag ang 100 1.000 - 14.7 2.160 160.5 0.008 12.8 0.942 - 8.2 200 0.960 - 24.5 1.953 148.3 0.003 81.1 0.947 - 9.6 300 0.926 - 34.3 1.868 135.8 0.005 - 146.8 0.906 - 16.4 400 0.876 - 45.0 1.760 121.2 0.003 - 59.5 0.908 - 19.4 500 0.853 - 54.4 1.691 109.4 0.003 84.3 0.915 - 25.1 600 0.842 - 63.1 1.608 97.6 0.004 - 87.0 0.889 - 29.0
5 3sk230 g ps and nf test circuit at f = 470 mhz 22 k w
v g2s
1 000 pf
1 000 pf
ferrite beads
40 pf
input
50 w
1 000 pf
15 pf
22 k w
1 000 pf
v g1s
40 pf
output
50 w
f
f
m
f
f
1 000 pf
15 pf
1 000 pf
v ds
l 2
l 1
l 3
l 1 : 1.2 mm u.e.w 5 mm it
l 2: 1.2 mm u.e.w 5 mm it
l 3: rec 2.2 h
nf test circuit at f = 55 mhz 3.3 k w v g2s v ds 2.2 k w 1 000 pf 1 500 pf 27 pf 47 k w 47 k w 3.3 k w 1 000 pf v g1s input 50 w output 50 w 27 pf 1 500 pf ferrite
beads rfc
6 3sk230 [memo]
7 3sk230 [memo]
3sk230 [memo] no part of this document may be copied or reproduced in any form or by any means without the prior written? consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this? document.? nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual? property rights of third parties by or arising from use of a device described herein or any other liability arising? from use of such device. no license, either express, implied or otherwise, is granted under any patents,? copyrights or other intellectual property rights of nec corporation or others.? while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices,? the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or? property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety? measures in its design, such as redundancy, fire-containment, and anti-failure features.? nec devices are classified into the following three quality grades:? "standard", "special", and "specific". the specific quality grade applies only to devices developed based on? a customer designated "quality assurance program" for a specific application. the recommended applications? of a device depend on its quality grade, as indicated below. customers must check the quality grade of each? device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment,? audio and visual equipment, home electronic appliances, machine tools, personal electronic? equipment and industrial robots? special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster? systems, anti-crime systems, safety equipment and medical equipment (not specifically designed? for life support)? specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life? support systems or medical equipment for life support, etc.? the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books.? if customers intend to use nec devices for applications other than those specified for standard quality grade,? they should contact an nec sales representative in advance.? anti-radioactive design is not implemented in this product. m4 96. 5
|
