application high speed power switching features ?low on?esistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc ?dc converter 1 2, 4 3 dpak? 1 2 3 4 1 2 3 4 1. gate 2. drain 3. source 4. drain table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss ?0 v drain current i d ?0 a drain peak current i d(pulse) * ?0 a body?rain diode reverse drain current i dr ?0 a channel dissipation pch** 20 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25? 2sj332 l , 2sj332 s silicon p channel mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss ?0 v i d = ?0 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss ?00 ? v ds = ?6 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.0 ?.5 v i d = ? ma, v ds = ?0 v static drain to source on state r ds(on) 0.05 0.08 ? i d = ? a resistance v gs = ?0 v * 0.09 0.14 ? i d = ? a v gs = ? v * forward transfer admittance |y fs | 69 si d = ? a v ds = ?0 v * input capacitance ciss 730 pf v ds = ?0 v output capacitance coss 680 pf v gs = 0 reverse transfer capacitance crss 260 pf f = 1 mhz turn?n delay time t d(on) 13 ns i d = ? a rise time t r 110 ns v gs = ?0 v turn?ff delay time t d(off) 90 ns r l = 2 ? fall time t f 110 ns body?rain diode forward v df ?.2 v i f = ?0 a, v gs = 0 voltage body?rain diode reverse t rr ?0 si f = ?0 a, v gs = 0, recovery time dif / dt = 50 a / ? * pulse test 2sj332 l , 2sj332 s
20 15 10 5 0 channel dissipation pch (w) 50 100 150 200 case temperature ta (?) power vs. temperature derating ?00 ?0 ?0 ? ? ?.3 ?.1 ?.1 ?.3 ? ? ?0 ?0 ?00 drain to source voltage v (v) ds drain current i (a) d 100 ? ta = 25 ? 10 ? 1 ms d.c operation (tc = 25 ?) operation in this area is limited by r ds(on) pw = 10 ms (1shot) maximum safe operation area ?0 ?6 ?2 ? ? 0 2 4 6 8 ?0 drain to source voltage v (v) ds drain current i (a) d ?0 v ? v ?.5 v ? v v = ?.5 v gs ? v pulse test typical output characteristics ?0 ?6 ?2 ? ? 0 1 2 3 4 5 gate to source voltage v (v) gs drain current i (a) d 75 ? tc = 25 ? ?5 ? v = ?0 v pulse test ds typical tranfer characteristics 2sj332 l , 2sj332 s
?.0 ?.8 ?.6 ?.4 ?.2 0 2 4 6 8 ?0 gate to source voltage v (v) gs drain to source voltage v (v) ds(on) d i = ?0 a ? a ? a pulse test drain to source saturation voltage vs. gate to source voltage 1 0.5 0.2 0.1 0.05 0.02 0.01 ?0 ?0 ?.5 ? ? ? ?0 drain current i (a) d drain to source on state resistance r ( ) ? ds(on) pulse test ?0 v v = ? v gs static drain to source on state resistance vs. drain current 0.20 0.16 0.12 0.08 0.04 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance ? ? a ?0 a ? a ? a v = ?0 v gs v = ? v gs i = ?0 a d ? a pulse test static drain to source on state resistance vs. temperature 20 10 5 2 1 0.5 50 ?0 ?.2 ?.5 ? ? ? ?0 drain current i (a) d forward transfer admittance |y | (s) fs ?5 ? 75 ? tc = 25 ? v = ?0 v pulse test ds forward transfer admittance vs. drain current 2sj332 l , 2sj332 s
5 10 500 200 100 50 20 ?.1 ?.2 ?.5 ?.0 ? ? ?0 reverse drain current i (a) dr reverse recovery time trr (ns) di / dt = 20 a / ? v = 0, pulse test gs body?rain diode reverse recovery time 10000 1000 100 10 0 4 8 ?2 ?6 ?0 capacitance c (pf) drain to source voltage v (v) ds ciss coss crss v = 0 f = 1 mhz gs typical capacitance vs. drain to source voltage 0 ?0 ?0 ?0 ?0 0 8 16 24 32 40 gate charge qg (nc) drain to source voltage v (v) ds 0 ? ? ?2 ?6 ?0 ?0 gate to source voltage v (v) gs v = ? v ?0 v ?0 v dd v = ? v ?0 v ?0 v dd ds v gs v i = ?0 a d dynamic input characteristics 500 200 100 50 20 10 5 ?.1 ?.2 ?.5 ? ? ? ?0 drain current i (a) d switching time t (ns) t f r t d(off) t d(on) t switching characteristics v = ?0 v, v = ?0 v pw = 2 ?, duty < 1 % gs dd 2sj332 l , 2sj332 s
?0 ?6 ?2 ? ? 0 ?.4 ?.8 ?.2 ?.6 ?0 drain to source voltage v (v) ds pulse test ?0 v ? v v = 0, 5 v gs reverse drain current i (a) dr reverse drain current vs. source to drain voltage 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 6.25 ?/w, tc = 25 ? d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25? normalized transient thermal impedance vs. pulse width 2sj332 l , 2sj332 s
vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 ? 90% 10% t f switching time test circuit waveforms 2sj332 l , 2sj332 s
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