5 micron cmos process family double poly / single metal 10 m m poly and metal i pitch features process parameters the 5m m process is a double poly/double metal cmos process with an operating voltage range from 5 to 12 volts. (13 volts maximum operating voltage.) description min. typ. max. pwell 2700 pfield in pwell 1000 2000 3000 n+ 6 10 14 p+ 70 90 110 poly gate 14 20 26 poly capacitor 30 55 80 metal i 0.032 resistances ( w /sq.) min. typ. max. condition npn vertical 275 vce = 5 volts bipolar gain min. typ. max. inter-poly 0.35 0.50 0.65 gate oxide 0.41 0.43 0.46 n+ junction 0.34 p+ junction 0.14 capacitances (ff/ m m 2 ) 5 micron - 12 volts units conditions n channel min. typ. max. p channel min. typ. max. vt (50x 5m m) 0.40 0.65 0.90 0.40 0.65 0.90 v saturation ids (50x 5m m) 20 6 m a/ m m vds=vgs=3v body factor (50x50 m m) 1.2 0.5 ? v bvdss 18 24 18 24 v ids=1 m a field threshold 18 >30 18 25 v ids = 14 m a l effective 1.8 2.8 m m l drawn = 5m m mosfet electrical parameters 5m m 12 volts units metal i pitch (width/space) 5 / 5 m m poly pitch (width/space) 5 / 5 m m contact 5x5 m m via 5x5 m m gate geometry 5 m m p-well junction depth 6.3 m m n+ junction depth 2.0 m m p+ junction depth 1.4 m m gate oxide thickness 800 ? inter poly oxide thick. 700 ? for more information: dalsa semiconductor sales tel : (450) 534-2321 ext. 1448 18 boulevard de l?aroport (800) 718-9701 bromont, qubec, canada fax (450) 534-3201 j2l 1s7 email: dalsasales@dalsasemi.com www.dalsasemi.com
|
