bul72b - lcc4 lab seme prelim. 6/00 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk advanced distributed base design high voltage high speed npn silicon power transistor ? semefab designed and diffused die high voltage fast switching high energy rating features multi?base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. ion implant and high accuracy masking for tight control of characteristics from batch to batch. triple guard rings for improved control of high voltages. v cbo collector ? base voltage(i e =0) v ceo collector ? emitter voltage (i b = 0) v ebo emitter ? base voltage (i c = 0) i c continuous collector current i c(pk) peak collector current i b base current p tot total dissipation at t case = 25c r q j-c thermal resistance junction to case t stg operating and storage temperature range 200v 100v 10v 8a 12a 2a 5w 25c/w ?55 to +150c mechanical data dimensions in mm 1.39 (0.055) 1.15 (0.045) 0.76 (0.030) 0.51 (0.020) 1.39 (0.055) 1.02 (0.040) 15 16 13 12 14 3 4 5 6 7 17 18 1 2 11 10 8 9 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) 2.16 (0.085) 7.62 (0.300) 7.12 (0.280) 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) 0.08 (0.003) 0.43 (0.017) 0.18 (0.007 rad. rad. transistor base collector emitter pins 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 absolute maximum ratings (t case = 25c unless otherwise stated) lcc4
bul72b - lcc4 lab seme prelim. 6/00 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk parameter test conditions min. typ. max. unit v ceo(sus) v (br)cbo v (br)ebo i cbo i ceo i ebo h fe* v ce(sat)* v be(sat)* f t c ob collector ? emitter sustaining voltage collector ? base breakdown voltage emitter ? base breakdown voltage collector ? base cut?off current collector ? emitter cut?off current emitter cut?off current dc current gain collector ? emitter saturation voltage base ? emitter saturation voltage transition frequency output capacitance 100 250 10 10 100 100 10 100 30 80 25 60 20 50 0.2 0.5 0.8 1.1 1.3 20 44 v m a m a m a ? v v mhz pf i c = 10ma i c = 1ma i e = 1ma v cb = 250v t c = 125c i b = 0 v ce = 100v v eb = 9v i c = 0 t c = 125c i c = 0.3a v ce = 4v i c = 3a v ce = 4v i c = 5a v ce = 4v t c = 125c i c = 1a i b = 0.1a i c = 3a i b = 0.3a i c = 5a i b = 0.5a i c = 3a i b = 0.3a i c = 5a i b = 0.5a i c = 0.2a v ce = 4v v cb = 10v f = 1mhz electrical characteristics (t case = 25c unless otherwise stated) * pulse test t p = 300 m s , d < 2% electrical characteristics dynamic characteristics
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