silicon pin photodiode, rohs compliant www.vishay.com for technical questions, contact: detectortec hsupport@vishay.com document number: 81520 382 rev. 1.5, 11-aug-08 BPW24R vishay semiconductors description BPW24R is a high sensitive silicon planar photodiode in a standard to-18 hermetically sealed metal case with a glass lens. a precise alignment of the chip gives a good coincidence of mechanical and optical axes. the device features a low capacitance and high speed even at low supply voltages. features ? package type: leaded ? package form: to-18 ? dimensions (in mm): ? 4.7 ? radiant sensitive area (in mm 2 ): 0.78 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 12 ? hermetically sealed package ? cathode connected to package ? central chip alignment ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? high speed photo detector note test condition see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 642 product summary component i ra (a) ? (deg) 0.5 (nm) BPW24R 60 12 600 to 1050 ordering information ordering code packaging remarks package form BPW24R bulk moq: 1000 pcs, 1000 pcs/bulk to-18 absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 210 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 125 c storage temperature range t stg - 40 to + 125 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
document number: 81520 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.5, 11-aug-08 383 BPW24R silicon pin photodiode, rohs compliant vishay semiconductors note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics parameter test condition symbol min. typ. max. unit breakdown voltage i r = 100 a, e = 0 v (br) 60 200 v reverse dark current v r = 50 v, e = 0 i ro 210na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 11 pf v r = 5 v, f = 1 mhz, e = 0 c d 3.8 pf v r = 20 v, f = 1 mhz, e = 0 c d 2.5 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 450 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 55 a temperature coefficient of i k e a = 1 klx tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 20 v i ra 45 60 a absolute spectral sensitivity v r = 5 v, = 870 nm s( ) 0.60 a/w v r = 5 v, = 900 nm s( ) 0.55 a/w angle of half sensitivity ? 12 deg wavelength of peak sensitivity p 900 nm range of spectral bandwidth 0.5 600 to 1050 nm rise time v r = 20 v, r l = 50 , = 820 nm t r 7ns fall time v r = 20 v, r l = 50 , = 820 nm t f 7ns 40 60 8 0 120 94 8 454 100 20 10 0 10 1 10 2 10 3 10 4 v r =50 v t am b - am b ient temperat u re (c) i ro - re v erse dark c u rrent (na) 0.6 0. 8 1.0 1.2 1.4 94 8 409 v r =5 v = 950 nm 100 8 0 60 40 20 0 i - relati v e re v erse light c u rrent t - am b ient temperat u re (c) am b ra rel
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81520 384 rev. 1.5, 11-aug-08 BPW24R vishay semiconductors silicon pin photodiode, rohs compliant fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sensitivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 10 94 8 455 v r =10 v = 950 nm e e - irradiance (m w /cm 2 ) i ra - re v erse light c u rrent ( a) 0.1 1 10 1 10 100 100 94 8 456 1m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 0.02 m w /cm 2 = 950 nm v r - re v erse v oltage ( v ) i ra - re v erse light c u rrent ( a) 0 2 4 6 8 12 10 0.1 1 10 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 100 94 8 439 e = 0 f = 1 mhz 350 550 750 950 0 0.2 0.4 0.6 0. 8 1.0 1150 94 8 45 8 - w a v elength (nm) s ( ) rel - relati v e spectral sensiti v ity 0.4 0.2 0 94 8 459 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 s rel - relati v e sensiti v ity ? - ang u lar displacement
document number: 81520 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.5, 11-aug-08 385 BPW24R silicon pin photodiode, rohs compliant vishay semiconductors package dimensions in millimeters c a 2.54 nom. 5.5 0.15 6.15 0.25 13.2 0.7 ? 0.45 +0.02 -0.05 lens 4 0.05 ? 4.69 + 0.02 - 0.07 chip position dra w ing- n o.: 6.503-5022.02-4 specifications according to di n technical dra w ings (2.5) iss u e: 1; 24.0 8 .9 8 144 8 7
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