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1996 1. general the m pc1675g, m pc1676g and m pc1688g are silicon monolithic ics developed as general-purpose high- frequency wideband amplifiers. these ics are based on the m pc1651g packaged in a 4-pin disc mold. the present ics are each packaged in a 4-pin mini-mold suitable for surface mounting on higher density print board. (the m pc1651g has been discontinued). the features of these amplifier ics are: <1> the 4-pin mini-mold package as shown in figure 1 substantially reduces the mounting area. <2> the ics are supplied on an embossed tape conforming to eiajs taping dimensions of electronic components (rc-1009). this embossed tape is 8 mm wide, and suits automatic mounting. <3> the following three models are available, classified by power gain. m pc1675g: g p = 12 db typ., nf = 5.5 db typ. (@f = 500 mhz) m pc1676g: g p = 22 db typ., nf = 4.5 db typ. (@f = 500 mhz) m pc1688g: g p = 21 db typ., nf = 4.0 db typ. (@f = 500 mhz) <4> all the models can operate at high frequency and in wide band. m pc1675g: 1900 mhz typ. m pc1676g: 1200 mhz typ. frequency point of C3 db gain from flat gain m pc1688g: 1100 mhz typ. <5> input/output matched to z o = 50 w . <6> single power source (v cc = 5 v typ.) figure 1. package (unit: mm) figure 2. internal equivalent circuit general-purpose high-frequency wideband amplifiers m pc1675g, m pc1676g, m pc1688g +v cc out gnd c r 6 q 7 r 7 q 8 r 5 q 6 q 2 q 3 q 4 q 5 q 1 r 3 r 4 r 1 r 2 in 2.8 +0.2 ?.3 1.5 +0.2 ?.1 2 3 0.4 +0.1 ?.05 0.4 +0.1 ?.05 (1.8) 0.95 0.85 2.9 0.2 + ? (1.9) 0.4 +0.1 ?.05 1 4 0.6 +0.1 ?.05 0.16 +0.1 ?.06 0 to 0.1 5? 5? 1.1 +0.2 ?.1 0.8 5? 5? pin connections 1. gnd 2. output 3. v cc 4. input document no. P10964EJ2V0AN00 (2nd edition) date published february 1996 p printed in japan y t
2 2. circuit configuration figure 2 shows the internal equivalent circuit of the m pc1675g/ m pc1676g/ m pc1688g. the equivalent circuits of all the models are the same, and gain is set by changing r 2 , r 3 , r 4 , and r 7 . like the m pc1651g, each circuit is designed as multiple negative feedback amplification from the output block to the base and emitter of q 1 . mos capacitance c is connected to the emitter of q 7 to peak the frequency characteristics. the basic circuit is the single-end multiple negative feedback amplification type shown in figure 3. this circuit configuration has the following features: figure 3. circuit configuration ~ r s r f2 r e1 r f1 r e2 r l <1> excellent frequency-gain characteristics. <2> the input/output impedance and gain can be determined by the feedback resistance. <3> excellent noise characteristics because the resistance at the emitter of transistor in the input stage is lower than that of the differential circuits. <4> excellent impedance matching with external circuits as compared with differential circuits, improving the output efficiency and decreasing the noise. as the first approximation, the input/output impedances r i and r o , and gain s 21 of the circuit in figure 3 can be generally determined by the following equation. r i = (r f2 + r e2 ) r e1 r (1) r e1 r + r e2 (r f1 + r e1 + r) r o = (r f1 + r e1 ) r e2 r (2) r e1 (r e2 + r f2 + r) + r e2 r s 21 = r f1 + r e1 (3) (where r s = r l = r) r e1 by following modification on figure 3, multiple negative feedback amplifier is realized as monolithic ic shown in figure 2.
3 <1> to increase the feedback loop gain, the final stage q 6 and q 7 are connected in a darlington configuration. q 6 is connected to r 5 to optimize the bias current. <2> as for feedback to the emitter of q 1 from the collectors of q 6 and q 7 , the impedance and voltage are adjusted by the emitter-follower configuration of q 2 and the diodes of q 3 through q 5 . <3> q 8 diode rises up q 7 emitter potential to supply bias current to q 1 base through feedback path. simulation results of input/output impedance and gain vs. r 3 , r 4 feedback resistance are shown below (the result of this simulation is slightly different from the calculation using equation 1 through 3 because the circuit configuration is more complicated than figure 3. r 3 is equivalent to r f2 in figure 3, and r 4 is equivalent to r f1 ). figure 4. input/output impedance vs. figure 5. forward transmission gain vs. feedback resistor negative feedback resistor 0 25 50 75 100 150 200 r 4 ( w ) z out z in ? ? ? ? ? ? r 3 = 140 120 100 80 ( w ) z in , z out ( w ) 100 150 200 15 20 r 3 = 140 120 100 80 ( w ) s 21 (db) r 4 ( w ) as shown in figures 4 and 5, the input/output impedance and gain can be easily controlled by feedback resistors r 3 and r 4 . respectively, the input/output impedance is set to 50 w for wideband operation, and r 3 and r 4 to 120 w and 200 w to obtain a sufficient gain.
4 3. characteristics this chapter compares the measured characteristics of m pc1675g and m pc1676g as representative ic. the absolute maximum ratings and electrical characteristics are shown in table 1 and 2. (test circuit is shown in figure 20.) table 1. absolute maximum ratings (t a = +25 ?c) parameter symbol rating unit supply voltage v cc 6v total dissipation p t 200 mw operating temperature range t opt C40 to +85 ?c storage temperature range t stg C55 to +150 ?c table 2. electrical characteristics (v cc = 5 v, t a = +25 ?c) specifications parameter symbol condition m pc1675g m pc1676g unit min. typ. max. min. typ. max. supply current i cc without signal 12 17 22 14 19 24 ma power gain g p f = 500 mhz 10 12 14 19 22 24 db noise factor nf f = 500 mhz C 5.5 7.0 C 4.5 6.0 db upper-limit operating frequency f u C3 db from gain flat 1600 1900 C 1000 1200 C mhz isolation isl f = 500 mhz 21 25 C 24 28 C db input return loss rl in f = 500 mhz 9 12 C 9 12 C db output return loss rl out f = 500 mhz 8 11 C69Cdb output power p o f = 500 mhz, p in = 0 dbm24C35Cdbm figures 6 through 11 and figures 12 through 17 show the characteristic curves including the voltage characteristics and temperature characteristics of the m pc1675g and m pc1676g. figure 18 shows the impedance characteristics (smith chart).
5 figure 6. g p , nf vs. f characteristics figure 7. isolation vs. f characteristics of m m m m m pc1675g of m m m m m pc1675g 0 4 8 12 60 100 200 500 1000 2000 nf 5.5 v 5.0 v 4.5 v 4.5 v 5.0 v 5.5 v g p noise factor nf (db) power gain g p (db) frequency f (mh z ) isolation isl (db) frequency f (mh z ) 60 100 200 500 1000 2000 ?0 ?0 ?0 0 v cc = 5 v input return loss rl in (db) output return loss rl out (db) frequency f (mh z ) 60 100 200 500 1000 2000 ?0 ?0 ?0 0 v cc = 5 v rl in rl out ?0 ?5 ?0 ?5 ?0 5 10 ?0 ?5 ?0 ? 0 5 v cc = 5 v, f = 500 mh z input level pin (dbm) output level po (dbm) figure 8. return loss vs. f characteristics figure 9. input/output characteristics of m pc1675g of m pc1675g
6 figure 10. im 3 characteristics figure 11. g p vs. temperature characteristics of m pc1675g of m pc1675g ?0 ?0 0 ?0 ?0 ?0 ?0 ?0 5.0 v 4.5 v 5.5 v f 1 = 500 mh z f 2 = 504 mh z im 3 level (db) output level po (dbm) ?5 0 +25 +50 +75 0 5 10 15 20 ambient temperature t a (?c) power gain g p (db) v cc = 5 v f = 0.1 gh z f = 0.5 gh z f = 1.0 gh z 60 100 200 500 1000 2000 frequency f (mh z ) 0 10 20 30 noise factor nf (db) power gain g p (db) 0 5 10 nf g p 5.0 v v cc = 5.5 v 4.5 v v cc = 5.5 v 4.5 v 5.0 v 60 100 200 500 1000 2000 frequency f (mh z ) isolation isl (db) ?0 ?0 ?0 0 v cc = 5 v figure 12. g p , nf vs. f characteristics figure 13. isolation vs. f characteristics of m m m m m pc1676g of m pc1676g
7 figure 14. return loss vs. f characteristics figure 15. input/output characteristics of m m m m m pc1676g of m m m m m pc1676g input return loss rl in (db) output return loss rl out (db) frequency f (mh z ) 60 100 200 500 1000 2000 ?0 ?0 ?0 0 v cc = 5 v rl out rl in ?0 ?0 ?0 0 ?0 ?0 0 10 input level p in (dbm) output level p o (dbm) ?0 ?0 0 ?0 ?0 ?0 ?0 ?0 5.0 v 4.5 v 5.5 v f 1 = 500 mh z f 2 = 504 mh z im 3 level (db) output level p o (dbm) ?5 0 +25 +50 +75 30 40 ambient temperature t a ( c) power gain g p (db) v cc = 5 v f = 0.1 gh z f = 0.5 gh z f = 1.0 gh z v cc = 5 v, f = 500 mh z 10 20 figure 16. im 3 characteristics of m m m m m pc1676g figure 17. g p temperature characteristics of m m m m m pc1676g
8 figure 18 (a). s 11 vs. f characteristics of m pc1675g a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s C160 C150 C140 C130 C120 C110 C100 C90 C80 C70 C60 C50 C40 C30 C20 C10 0 10 20 30 40 50 00 60 70 80 90 100 110 120 130 140 150 0 0.02 0.48 0.04 0.46 0.06 0.44 0.08 0.42 0.10 0.40 0.12 0.38 0.04 0.36 0.16 0.34 0.18 0.32 0.20 0.30 0.22 0.28 0.24 0.26 0.26 0.24 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.48 0.02 0 0.49 0.47 0.45 0.43 0.41 0.39 0.37 0.35 0.33 0.31 0.29 0.27 0.25 0.23 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.01 0.01 0.03 0.05 000.07 0.09 0.11 0.13 0.15 0.17 0.19 000.21 0.23 0.25 0.27 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.49 w a v e l e n g t h s t o w a r d l o a d w a v e l e n g t h s t o w a r d g e n e r a t o r 2.0 5.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 10 50 20 50 10 6.0 4.0 3.0 1.8 1.6 1.4 0.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 20 ( +jx CCCC z o ) 0.2 1.0 0.8 0.6 0.4 0.2 0.4 0.6 0.8 1.0 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.3 0.2 0.1 20 0.2 1.0 0.8 0.6 0.4 0.2 0.4 0.6 0.8 1.0 0.4 0.5 reactance component ( r CCCC z o ) n e g a t i v e r e a c t a n c e c o m p o n e n t ( C jx CCCC z o ) p o s i t i v e r e a c t a n c e c o m p o n e n t 200 mhz 50 mhz 100 mhz 2.0 mhz v cc = 5.0 v figure 18 (b). s 22 vs. f characteristics of m pc1675g a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s C160 C150 C140 C130 C120 C110 C100 C90 C80 C70 C60 C50 C40 C30 C20 C10 0 10 20 30 40 50 00 60 70 80 90 100 110 120 130 140 150 0 0.02 0.48 0.04 0.46 0.06 0.44 0.08 0.42 0.10 0.40 0.12 0.38 0.04 0.36 0.16 0.34 0.18 0.32 0.20 0.30 0.22 0.28 0.24 0.26 0.26 0.24 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.48 0.02 0 0.49 0.47 0.45 0.43 0.41 0.39 0.37 0.35 0.33 0.31 0.29 0.27 0.25 0.23 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.01 0.01 0.03 0.05 000.07 0.09 0.11 0.13 0.15 0.17 0.19 000.21 0.23 0.25 0.27 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.49 w a v e l e n g t h s t o w a r d l o a d w a v e l e n g t h s t o w a r d g e n e r a t o r 2.0 5.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 10 50 20 50 10 6.0 4.0 3.0 1.8 1.6 1.4 0.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 20 ( +jx CCCC z o ) 0.2 1.0 0.8 0.6 0.4 0.2 0.4 0.6 0.8 1.0 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.3 0.2 0.1 20 0.2 1.0 0.8 0.6 0.4 0.2 0.4 0.6 0.8 1.0 0.4 0.5 reactance component ( r CCCC z o ) n e g a t i v e r e a c t a n c e c o m p o n e n t ( C jx CCCC z o ) p o s i t i v e r e a c t a n c e c o m p o n e n t 200 mhz 2 ghz 1.2 ghz 50 mhz v cc = 5.0 v 100 mhz
9 figure 18 (c). s 11 vs. f characteristics of m m m m m pc1676g a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s ?60 ?50 ?40 ?30 ?20 ?10 ?00 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 0 10 20 30 40 50 00 60 70 80 90 100 110 120 130 140 150 0 0.02 0.48 0.04 0.46 0.06 0.44 0.08 0.42 0.10 0.40 0.12 0.38 0.04 0.36 0.16 0.34 0.18 0.32 0.20 0.30 0.22 0.28 0.24 0.26 0.26 0.24 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.48 0.02 0 0.49 0.47 0.45 0.43 0.41 0.39 0.37 0.35 0.33 0.31 0.29 0.27 0.25 0.23 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.01 0.01 0.03 0.05 000.07 0.09 0.11 0.13 0.15 0.17 0.19 000.21 0.23 0.25 0.27 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.49 w a v e l e n g t h s t o w a r d l o a d w a v e l e n g t h s t o w a r d g e n e r a t o r 2.0 5.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 10 50 20 50 10 6.0 4.0 3.0 1.8 1.6 1.4 0.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 20 ( +jx z o ) 0.2 1.0 0.8 0.6 0.4 0.2 0.4 0.6 0.8 1.0 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.3 0.2 0.1 20 0.2 1.0 0.8 0.6 0.4 0.2 0.4 0.6 0.8 1.0 0.4 0.5 reactance component ( r z o ) n e g a t i v e r e a c t a n c e c o m p o n e n t ( ?jx z o ) p o s i t i v e r e a c t a n c e c o m p o n e n t 200 mhz 50 mhz 100 mhz 1.2 ghz v cc = 5.0 v figure 18 (d). s 22 vs. f characteristics of m m m m m pc1676g a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s ?60 ?50 ?40 ?30 ?20 ?10 ?00 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 0 10 20 30 40 50 00 60 70 80 90 100 110 120 130 140 150 0 0.02 0.48 0.04 0.46 0.06 0.44 0.08 0.42 0.10 0.40 0.12 0.38 0.04 0.36 0.16 0.34 0.18 0.32 0.20 0.30 0.22 0.28 0.24 0.26 0.26 0.24 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.48 0.02 0 0.49 0.47 0.45 0.43 0.41 0.39 0.37 0.35 0.33 0.31 0.29 0.27 0.25 0.23 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.01 0.01 0.03 0.05 000.07 0.09 0.11 0.13 0.15 0.17 0.19 000.21 0.23 0.25 0.27 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.49 w a v e l e n g t h s t o w a r d l o a d w a v e l e n g t h s t o w a r d g e n e r a t o r 2.0 5.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 10 50 20 50 10 6.0 4.0 3.0 1.8 1.6 1.4 0.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 20 ( +jx z o ) 0.2 1.0 0.8 0.6 0.4 0.2 0.4 0.6 0.8 1.0 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.3 0.2 0.1 20 0.2 1.0 0.8 0.6 0.4 0.2 0.4 0.6 0.8 1.0 0.4 0.5 reactance component ( r z o ) n e g a t i v e r e a c t a n c e c o m p o n e n t ( ?jx z o ) p o s i t i v e r e a c t a n c e c o m p o n e n t 200 mhz 1.2 ghz 50 mhz v cc = 5.0 v 100 mhz
10 4. printed pattern mounting example the m pc1675g/ m pc1676g/ m pc1688g are wideband amplifiers of simple construction with only four pins: input, output, power, and gnd. because the upper-limit operating frequency is as high as 1900 mhz typ. in the case of m pc1675g and 1200 mhz typ. with the m pc1676g, the frequency characteristics substantially vary depending on the conditions of the print pattern (especially at high frequencies). figure 19 shows these variations in the characteristics of the m pc1675g. print boards a, b, and c in this figure are: board a : double-sided copper clad epoxy glass board with gnd on the back and front surfaces connected, and a gnd line inserted between input and output to provide an isolation effect. figure 20 shows an example pattern. board b : board a without gnd line between input and output. board c : board b without gnd on back side. as shown in figure 19, a print board equivalent to a is necessary because of peaking in the vicinity of f = 1 ghz and an increase in the frequency characteristics. the gnd line between input and output has an especially important effect. board a is used to measure characteristics in chapter 3. figure 19. mounting characteristics example of m m m m m pc1675g (g p = 13 db) 0.1 0.2 0.3 0.5 0.7 1 2 0 5 10 15 20 v cc = 5 v t a = 25 ?c power gain g p (db) frequency f (ghz) board a board b board c
11 figure 20 (a). pattern example (top view) figure 20 (b). mounting example (top view) ic v cc (supply voltage) chip capacitor output input osm connector osm connector chip capacitors figure 20 (c). operation circuit v cc 1000 pf 1000 pf 1000 pf output input
12 5. application example (1) buffer amplifier for prescaler the input sensitivity of 1-ghz-class prescalers used in uhf and vhf tv tuners has recently increased. even so, a buffer amplifier is connected in the stage preceding these prescalers. the purpose of this is to decrease coupling with the local oscillation stage and to improve isolation after the oscillation stage and prescaler. figure 21 shows the sensitivity characteristics when necs m pb568g 1-ghz prescaler is used, and figure 22 shows a circuit example. as the load on the m pc1675g/1676g, a 51- w resistor is connected to gnd. values of 50 to 200 w are suitable for this resistor. because the saturation output of the m pc1675g/1676g can be kept to 4 to 5 dbm, overload input to the prescaler can also be prevented (usually, a prescaler does not divide the frequency when an input higher than 8 to 10 dbm is applied). as another local oscillation peripheral, the amplifier ic can also be used as a buffer amplifier to the mix stage to prevent oscillation drift when a high input is applied to the antenna (figure 22). figure 21. input sensitivity characteristics of m m m m m pc1675g/1676g + prescaler m m m m m pb568g 1 100 200 300 500 1000 2000 ?0 ?0 ?0 ?0 0 input sensitivity p in (dbm) input frequency f in (mhz) pb568g only m pc1675g + pb568g m m pc1676g + pb568g m m note m pb568g has been discontinued.
13 figure 22. prescaler buffer amplifier 18 27 36 45 1 000 pf 1 000 pf out +b = 5 v mix antenna input rf amplifier to if buffer amplifier local osc (vhf) uhf local coupling capacitance can be reduced. approx. 50 to 200 w prescaler (2) cascade amplifier the input/output impedance of the m pc1675g/1676g/1688g is matched to 50 w so that multiple amplifier ics can be connected. therefore, the amplifier ics can be used as a cascade amplifier. figure 23 shows an example of the characteristics of two m pc1675gs connected in cascade. for the print pattern, a double-sided copper clad epoxy glass board is used as described in chapter 4, and the input and output are isolated by the gnd line. the m pc1676g is a high-gain type ic. however, because of peaking at f = 700 mhz, the targeted characteristics must be considered of the combination. as a combination to produce output p o = 10 dbm, use the m pc1675g + m pc1658g. figure 23. cascade amplifier characteristics of two m m m m m pc1675gs 0.1 0.2 0.3 0.5 0.7 1 2 0 5 10 0 10 20 30 40 v cc = 5 v t a = 25 ?c g p nf power gain g p (db) frequency f (ghz) noise factor (db) . .
14 [memo]
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