reflective photosensors (photo reflectors) 1 publication date: april 2004 shg00052bed cnz2152 (ON2152) reflective photosensor non-contact point sw, object sensing overview cnz2152 is a photosensor detecting the change of reflective light in which a high efficiency gaas infrared light emitting diode is used as the light emitting element, and a high sensitivity si phototransistor is used as the light detecting element. the two elements are located parallel in the same direction and objects are detected when passing in front of the device. features ? fast response ? high sensitivity ? high sn ratio applications ? detection of paper, film and cloth ? optical mark reading ? detection of coin and bill ? detection of position and edge ? start, end mark detection of magnetic tape absolute maximum ratings t a = 25 c unit: mm parameter symbol rating unit input (light reverse voltage v r 3v emitting diode) forward current i f 100 ma power dissipation * 1 p d 150 mw output (photo collector-emitter voltage v ceo 20 v transistor) (base open) emitter-collector voltage v eco 3v (base open) collector current i c 30 ma collector power dissipation * 2 p c 150 mw temperature operating ambient temperature t opr ? 25 to + 85 c storage temperature t stg ? 30 to + 100 c parameter symbol conditions min typ max unit input forward voltage v f i f = 100 ma 1.25 1.50 v characteristics reverse current i r v r = 5 v 10 a output collector-emitter cutoff current i ceo v ce = 10 v 0.05 2.00 a characteristics (base open) transfer collector current * 1 i c * 2 v cc = 5 v, i f = 20 ma, r l = 100 ? 0.8 3.0 ma characteristics i c * 3 500 a collector-emitter saturation voltage v ce(sat) i f = 100 ma, i c = 1 ma 0.6 v rise time t r v cc = 10 v, i c = 1 ma, r l = 100 ? 8 s fall time t f 8 s * 2: white paper (reflective ratio 90%) * 3: tracing paper (paper sm-1 for 2nd original paper) r l i f i c v cc d = 5 mm test paper (note) ( ) dimension is reference (10.0) (2.54) 4- 0.45 0.9 +0.1 - 0.2 +0.1 - 0.2 +0.1 - 0.2 14.0 16.0 0.3 1.0 10.0 0.2 6.2 0.2 7.0 min. 1.0(typ.) 2.2 0.2 mark for indicating led side 1.5 3.5 0.2 3.2 0.2 8.0 0.2 2 3 1 4 1: cathode 2: anode 3: emitter 4: collector prstr104-001 package electrical-optical characteristics t a = 25 c 3 c note) 1. input and output are handled electrically. 2. this product is not designed to withstand radiation 3. * 1: output current measurement circuit (ambient light is shut off completely) note) the part number in the parenthesis shows conventional part number. note) * 1: input power derating ratio is 2.0 mw/ c at t a 25 c. * 2: output power derating ratio is 2.0 mw/ c at t a 25 c.
2 cnz2152 shg00052bed i f , i c ? t a i f ? v f i c ? i f v f ? t a i c ? v ce ? i c ? t a i ceo ? t a t r ? i c i c ? d ambient temperature t a ( c) forward current i f , collector current i c (ma) 120 100 80 60 40 20 0 120 100 80 60 40 20 0 0 20406080100 ? 25 11010 2 10 ? 1 10 2 10 1 10 ? 1 forward current i f (ma) collector current i c (ma) 10 ? 2 10 3 10 2 10 1 10 ? 1 10 ? 2 16 12 8 4 0 collector-emitter voltage v ce (v) collector current i c (ma) 08 416 12 24 20 distance d (mm) collector current i c (ma) 16 12 8 4 0 2468 12 10 0 t a = 25 c t a = 25 c v cc = 10 v t a = 25 c v cc = 5 v r l = 100 ? t a = 25 c (1) white paper (reflective ratio 90%) (2) tracing paper (paper sm-1 for 2nd original paper) v cc = 5 v i f = 20 ma r l = 100 ? v cc = 5 v t a = 25 c i f = 20 ma r l = 100 ? forward voltage v f (v) forward current i f (ma) 0.4 1.2 1.6 2.0 2.4 0.8 0 1.6 1.2 0.8 0.4 ambient temperature t a ( c) forward voltage v f (v) 0 160 120 80 40 ambient temperature t a ( c) relative collector current ? i c (%) ? 40 04080 ? 40 04080 0 ambient temperature t a ( c) collector-emitter cutoff current (base open) i ceo ( a) ? 40 04080 10 3 10 2 10 1 collector current i c (ma) rise time t r ( s) 10 10 ? 1 10 ? 2 10 ? 1 1 i f i c i f = 100 ma 50 ma (1) (2) i f = 100 ma 80 ma 60 ma 50 ma 40 ma 30 ma 20 ma 10 ma v ce = 25 v 10 v r l = 1 k ? 100 ? 10% 90% t d t r t f r l v cc v 1 v 2 v 1 v 2 sig. out 50 ? sig. in white paper (reflective ratio 90%) mirror d
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