ZXTN26020DMF documnt number: ds31953 rev. 2 - 1 1 of 6 www.diodes.com september 2009 ? diodes incorporated a product line o f diodes incorporated ZXTN26020DMF features ? high gain low vcesat npn transistor ? very low rcesat ? high icm capability ? 1.5a continuous current rating ? ultra-small surface mount package ? qualified to aec-q101 standards for high reliability ? lead, halogen and antimony free, rohs compliant (note 1) ? ?green? device (note 2) ? esd rating: 400v-mm, 8kv-hbm mechanical data ? case: dfn1411-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau ov er copper lead frame. solderable per mil-std-202, method 208 ? weight: 0.003 grams (approximate) applications ? mosfet and igbt gate driving ? dc-dc conversion ? interface between low voltage ic and load ? led driving ordering information product status marking reel size (inches) tape width (mm) quantity per reel ZXTN26020DMFta active z1 7 8 3000 notes: 1. no purposefully added lead. halogen and antimony free. 2. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d z1 = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) top view pin-out top view device symbol bottom view z1 high gain, low v ce(sat) npn bipolar transistor
ZXTN26020DMF documnt number: ds31953 rev. 2 - 1 2 of 6 www.diodes.com september 2009 ? diodes incorporated a product line o f diodes incorporated ZXTN26020DMF maximum ratings characteristic symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 7 v continuous collector current (note 4) i c 1.5 a peak pulse current i cm 4 a base current i b 0.5 a thermal characteristics characteristic symbol value unit power dissipation (note 3) p d 1 w power dissipation (note 4) p d 380 mw thermal resistance, junction to ambient (note 3) @ t a = 25 c r ja 125 c/w thermal resistance, junction to ambient (note 3) @ t a = 25 c r ja 330 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 3. device mounted on fr-4 pcb with 1inch square pads. 4. device mounted on fr-4 pcb with minimum recommended pad layout 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 140 160 t , ambient temperature ( c) a fig. 1 power dissipation vs. ambient temperature p , p o we r dissi p a t i o n (w) d note 3 note 4 0.1 1 10 100 1,000 single pulse 0.00001 0.001 0.1 10 1,000 fig. 2 single pulse maximum power dissipation t , pulse duration time (s) 1 t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 328c/w ja ja p ( p k ) , p eak t r a n sie n t p o we r (w ) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 3 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 328c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.1
ZXTN26020DMF documnt number: ds31953 rev. 2 - 1 3 of 6 www.diodes.com september 2009 ? diodes incorporated a product line o f diodes incorporated ZXTN26020DMF electrical characteristics (at t a = 25c unless otherwise specified) characteristic symbol min typ max unit test condition collector-base breakdown voltage v ( br ) cbo 20 ? ? v i c = 100 a, i e = 0a collector-emitter breakdown voltage (note 5) v ( br ) ceo 20 ? ? v i c = 10ma, i b = 0a emitter-base breakdown voltage v ( br ) ebo 7 ? ? v i e = 100 a, i c = 0a emitter-collector breakdown voltage v ( br ) eco 5 ? ? v i e = 100 a, i b = 0a collector cutoff current icbo ? ? 100 0.5 na a v cb = 20v, i e = 0a v cb = 20v, i e = 0, t a = 125 c emitter cutoff current ices ? ? 100 na v ce = 20v, v be = 0v base cutoff current iebo ? ? 100 na v be = 5.6v, i c = 0a dc current gain (note 5) h fe 300 290 270 200 ? ? ? ? 1000 ? ? ? ? v ce = 2v, i c = 100ma v ce = 2v, i c = 0.5a v ce = 2v, i c = 1a v ce = 2v, i c = 2a collector-emitter saturation voltage (note 5) v ce(sat) ? ? ? ? ? ? ? ? ? ? ? ? 45 70 125 225 225 290 mv mv mv mv mv mv i c = 100ma, i b = 1ma i c = 500ma, i b = 25ma i c = 1a, i b = 50ma i c = 1.5a, i b = 30ma i c = 2a, i b = 100ma i c = 2a, i b = 40ma equivalent on-resistance r ce ( sat ) ? 90 ? m ? i c = 1a, i b = 50ma base-emitter turn-on voltage v be ( on ) ? ? 1.2 v v ce = 2v, i c = 2a base-emitter saturation voltage v be ( sat ) ? ? 1.1 v i c = 2a, i b = 100ma output capacitance (note 5) c obo ? ? 20 pf v cb = 10v, f = 1.0mhz input capacitance (note 5) c ibo ? ? 150 pf v eb = 0.5v, f = 1.0mhz current gain-bandwidth product f t ? 260 ? mhz v ce = 10v, i c = 50ma, f = 100mhz turn-on time t on ? 60 ? ns v cc = 10v, i c = 1a i b2 = -i b1 = 50ma delay time t d ? 20 ? ns rise time t r ? 40 ? ns turn-off time t off ? 225 ? ns storage time t s ? 205 ? ns fall time t f ? 20 ? ns notes: 5. short duration pulse test used to minimize self-heating effect. 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 01 2 3 45 v , collector-emitter voltage (v) ce fig. 4 typical collector current vs. collector-emitter voltage i, c o lle c t o r c u r r e n t (a) c i = 1ma b i = 2ma b i = 3ma b i = 4ma b i = 5ma b 0 100 200 300 400 500 600 700 800 900 1,000 1,100 1,200 0.001 0.01 0.1 1 10 i , collector current (a) c fig. 5 typical dc current gain vs. collector current h, d c c u r r en t g ain fe t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a
ZXTN26020DMF documnt number: ds31953 rev. 2 - 1 4 of 6 www.diodes.com september 2009 ? diodes incorporated a product line o f diodes incorporated ZXTN26020DMF 0.1 1 10 100 1,000 10,000 i , collector current (ma) c fig. 6 typical collector-emitter saturation voltage vs. collector current 0.001 0.01 0.1 1 v, c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) t = -55c a i/i = 20 cb t = 25c a t = 85c a t = 125c a t = 150c a 0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 1,000 10,000 i , collector current (ma) c fig. 7 typical base-emitter turn-on voltage vs. collector current v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) v = 5v ce t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1,000 10,000 i , collector current (ma) c fig. 8 typical base-emitter saturation voltage vs. collector current v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) i = 10 cb /i t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v , reverse voltage (v) r fig. 9 typical capacitance characteristics c a p a c i t a n c e (pf) c ibo c obo f = 1mhz 0 100 200 300 400 500 0 5 10 15 20 25 30 35 40 45 50 i , collector current (ma) c fig. 10 typical gain-bandwidth product vs. collector current f, g ai n -ba n dwid t h p r o d u c t (m h z) t v = 10v ce fig. 11 collector cutoff current vs. ambient temperature 1 10 100 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a i , collector cutoff current (na) cbo v = 20v i = 0 cbe c
ZXTN26020DMF documnt number: ds31953 rev. 2 - 1 5 of 6 www.diodes.com september 2009 ? diodes incorporated a product line o f diodes incorporated ZXTN26020DMF package outline dimensions suggested pad layout dfn1411-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.02 b 0.25 0.35 0.30 d 1.35 1.475 1.40 d2 0.65 0.85 0.75 e 1.05 1.18 1.10 e ? ? 0.55 l 0.225 0.325 0.275 l1 ? ? 0.20 all dimensions in mm dimensions value (in mm) z 1.38 g1 0.15 g2 0.15 x 0.95 x1 0.75 x2 0.40 y 0.75 c 0.76 a1 a c y x1 z g1 x x2 g2
ZXTN26020DMF documnt number: ds31953 rev. 2 - 1 6 of 6 www.diodes.com september 2009 ? diodes incorporated a product line o f diodes incorporated ZXTN26020DMF important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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