technische information / technical information igbt-module igbt-modules bsm50gb120dlc h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage t vj = 25 c v ces 1200 v kollektor-dauergleichstrom t c = 80 c i c,nom. 50 a dc-collector current t c = 25 c i c 115 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 100 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 460 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 50 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 100 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 430 a 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 2,5 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 50a, v ge = 15v, t vj = 25c v ce sat - 2,1 2,6 v collector-emitter saturation voltage i c = 50a, v ge = 15v, t vj = 125c - 2,4 2,9 v gate-schwellenspannung gate threshold voltage i c = 2ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v gateladung gate charge v ge = -15v...+15v q g - 0,53 - c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies - 3,3 - nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - 0,21 - nf kollektor-emitter reststrom collector-emitter cut-off current gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: mod-d2, mark mnzer date of publication: 2003-01-10 approved by: sm tm; wilhelm rusche revision: 3.0 5ma v ce = 1200v, v ge = 0v, t vj = 25c i ces -- 1(8) db_bsm50gb120dlc_3.0 2003-01-10
technische information / technical information igbt-module igbt-modules bsm50gb120dlc charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 50a, v ce = 600v turn on delay time (inductive load) v ge = 15v, r g = 15 ? , t vj = 25c t d,on - 0,05 - s v ge = 15v, r g = 15 ? , t vj = 125c - 0,06 - s anstiegszeit (induktive last) i c = 50a, v ce = 600v rise time (inductive load) v ge = 15v, r g = 15 ? , t vj = 25c t r - 0,05 - s v ge = 15v, r g = 15 ? , t vj = 125c - 0,05 - s abschaltverz?gerungszeit (ind. last) i c = 50a, v ce = 600v turn off delay time (inductive load) v ge = 15v, r g = 15 ? , t vj = 25c t d,off - 0,25 - s v ge = 15v, r g = 15 ? , t vj = 125c - 0,30 - s fallzeit (induktive last) i c = 50a, v ce = 600v fall time (inductive load) v ge = 15v, r g = 15 ? , t vj = 25c t f - 0,03 - s v ge = 15v, r g = 15 ? , t vj = 125c - 0,07 - s einschaltverlustenergie pro puls i c = 50a, v ce = 600v, v ge = 15v turn-on energy loss per pulse r g = 15 ? , t vj = 125c, l = 120nh e on - 6,4 - mj abschaltverlustenergie pro puls i c = 50a, v ce = 600v, v ge = 15v turn-off energy loss per pulse r g = 15 ? , t vj = 125c, l = 120nh e off - 6,2 - mj kurzschlu?verhalten t p 10s, v ge 15v, r g = 15 ? sc data t vj 125c, v cc =900v, v cemax =v ces -l ce di/dt i sc - 400 - a modulinduktivit?t stray inductance module l ce - 40 - nh modul leitungswiderstand, anschlsse ? chip module lead resistance, terminals ? chip t c =25c r cc?+ee? - 1,0 - m ? charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 50a, v ge = 0v, t vj = 25c v f - 1,8 2,3 v forward voltage i f = 50a, v ge = 0v, t vj = 125c - 1,7 2,2 v rckstromspitze i f = 50a, - di f /dt = 1300a/s peak reverse recovery current v r = 600v, v ge = -15v, t vj = 25c i rm -52- a v r = 600v, v ge = -15v, t vj = 125c -66- a sperrverz?gerungsladung i f = 50a, - di f /dt = 1300a/s recovered charge v r = 600v, v ge = -15v, t vj = 25c q r - 5,1 - c v r = 600v, v ge = -15v, t vj = 125c - 10,7 - c abschaltenergie pro puls i f = 50a, - di f /dt = 1300a/s reverse recovery energy v r = 600v, v ge = -15v, t vj = 25c e rec - 1,9 - mj v r = 600v, v ge = -15v, t vj = 125c -4-mj 2(8) db_bsm50gb120dlc_3.0 2003-01-10
technische information / technical information igbt-module igbt-modules bsm50gb120dlc thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,27 k/w thermal resistance, junction to case diode/diode, dc - - 0,60 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module ?? = 1 w/m * k / grease = 1 w/m * k r thck - 0,05 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj max - - 150 c betriebstemperatur operation temperature t vj op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation al 2 o 3 kriechstrecke creepage distance 20 mm luftstrecke clearance distance 11 mm cti comperative tracking index 275 anzugsdrehmoment f. mech. befestigung mounting torque anzugsdrehmoment f. elektr. anschlsse terminal connection torque gewicht weight g 250 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. anschlsse / terminals m5 m nm nm 3,0 6,0 - 2,5 5,0 - m schraube / screw m6 3(8) db_bsm50gb120dlc_3.0 2003-01-10
technische information / technical information igbt-module igbt-modules bsm50gb120dlc i c [a] v ce [v] i c [a] v ce [v] 0 10 20 30 40 50 60 70 80 90 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 tvj = 25c tvj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 10 20 30 40 50 60 70 80 90 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 17v vge = 15v vge = 13v vge = 11v vge = 9v vge = 7v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4(8) db_bsm50gb120dlc_3.0 2003-01-10
technische information / technical information igbt-module igbt-modules bsm50gb120dlc i c [a] v ge [v] i f [a] v f [v] 0 10 20 30 40 50 60 70 80 90 100 56789101112 tvj = 25c tvj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 10 20 30 40 50 60 70 80 90 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5(8) db_bsm50gb120dlc_3.0 2003-01-10
technische information / technical information igbt-module igbt-modules bsm50gb120dlc e [mj] i c [a] e [mj] r g [ ? ] 0 2 4 6 8 10 12 14 16 18 0 102030405060708090100 eoff eon erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) v ge =15v, r g =15 ? , v ce = 600v, t vj = 125c 0 4 8 12 16 20 24 28 0 20 40 60 80 100 120 140 eoff eon erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) v ge =15v , i c = 50a , v ce = 600v , t vj = 125c 6(8) db_bsm50gb120dlc_3.0 2003-01-10
technische information / technical information igbt-module igbt-modules bsm50gb120dlc z thjc [k / w] t [s] i 1234 r i [k/kw] : igbt 52,7 177,41 14,08 25,81 i c [a] v ce [v] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, r g = 15 ? , t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0 20 40 60 80 100 120 0 200 400 600 800 1000 1200 1400 ic,modul ic,chip 0,001 0,01 0,1 1 0,001 0,01 0,1 1 10 zth:diode zth:igbt 7(8) db_bsm50gb120dlc_3.0 2003-01-10
technische information / technical information igbt-module igbt-modules bsm50gb120dlc 8(8) db_bsm50gb120dlc_3.0 2003-01-10
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