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| savantic semiconductor product specification silicon npn power transistors 2SD1913 description with to-220f package complement to type 2sb1274 high reliability. high breakdown voltage low saturation voltage. wide area of safe operation applications 60v/3a low-frequency power amplifier general power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a i cm collector current-peak 8 a t c =25 20 p c collector dissipation 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1913 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 60 v v (br)ceo collector-emitter breakdown voltage i c =5ma; r be = ? 60 v v (br)ebo base-emitter breakdown voltage i e =1ma; i c =0 6 v v cesat collector-emitter saturation voltage i c =2a ; i b =0.2a 0.4 1.0 v v be base-emitter voltage i c =0.5a ; v ce =5v 0.8 1.0 v i cbo collector cut-off current v cb =40v;i e =0 0.1 ma i ebo emitter cut-off current v eb =4v;i c =0 0.1 ma h fe-1 dc current gain i c =0.5a ; v ce =5v 70 280 h fe-2 dc current gain i c =3a ; v ce =5v 20 f t transition frequency i c =0.5a ; v ce =5v 100 mhz cob output capacitance i e =0 ; v cb =10v; f=1mhz 40 pf h fe-1 classifications q r s 70-140 100-200 140-280 savantic semiconductor product specification 3 silicon npn power transistors 2SD1913 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2SD1913 |
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