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  1993. 11. 10 1/2 semiconductor technical data KTD1145 epitaxial planar npn transistor revision no : 0 relay drive, hammer dirve, lamp drive. strobo, dc-dc converter, motor drive. features  low saturation voltage. : v ce(sat) =0.5v(max.) (i c =3a, i b =60ma).  high collector current. : i c =5a, i cp (peak current )=8a.  wide aso. maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) note 1: pulse width # 100ms, duty cycle # 30% characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 6 v collector current dc i c 5 a pulse (note1) i cp 8 collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55  150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 100 na emitter cut-off current i ebo v eb =5v, i c =0 - - 100 na dc current gain h fe (1) (note 1) v ce =2v, i c =0.5a 140 - 600 h fe (2) v ce =2v, i c =3a (pulse) 75 - - collector-emitter saturation voltage v ce(sat) i c =3a, i b =60ma (pulse) - - 0.5 v transition frequency f t v ce =10v, i c =50ma - 120 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 27 - pf note 1 : h fe (1) classification a:140  240, b:200  330, c:300  450, d:420  600
1993. 11. 10 2/2 KTD1145 revision no : 0 collector power dissipation p (mw) 0 c 0 ambient temperature ta ( c) c p - ta collector current i (a) 0 c 0 base-emitter voltage v (v) be be c i - v collector-emitter saturation ce(sat) 0.03 3 1 0.3 0.1 collector current i (a) c v - i h - i c collector current i (a) 0.01 0.03 0.1 0.3 fe dc current gain (h ) i - v cce ce collector-emitter voltage v (v) 0 c 0 collector current i (a) safe operating area ce collector-emitter voltage v (v) 0.1 0.3 1 3 c collector current i (a) 12345 1 2 3 4 5 common emitter ta=25 c 50 40 30 20 10 i =5ma b 0.4 0.8 1.2 1.6 2.0 1 2 3 4 5 6 common emitter v =2v pulse ce fe c 135 10 30 50 100 3o0 500 1k common emitter v =2v ce ce(sat) c voltage v (v) 10 0.5 5 0.05 0.1 0.3 0.5 1 3 5 common emitter i /i =50 (pulse) c b 20 40 60 80 100 120 140 160 200 400 600 800 1k 1.2k 10 30 0.03 0.05 0.1 0.3 0.5 1 3 5 10 nonrepetitive pulse ta=25 c pulse width 100ms duty cycle 30% ta=25 c curves must be derated linearly with increase in temperature single 100 m s i ma x(pulsed) c i max( contin u o us ) c * * * * * * < = < =


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