CHT2302PT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t n - c h a n n e l e n h a n c e m e n t m o d e f i e l d e f f e c t t r a n s i s t o r v o l t a g e 2 0 v o l t s c u r r e n t 2.8 ampere a p p l i c a t i o n f e a t u r e * s m a l l s u r f a c e m o u n t i n g t y p e . ( sc-59/sot-346) * h i g h d e n s i t y c e l l d e s i g n f o r l o w r d s ( o n ) . * s u i t a b l e f o r h i g h p a c k i n g d e n s i t y . c o n s t r u c t i o n * n-channel enhancement * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . 2005-12 * r u g g e d a n d r e l i a b l e . * h i g h s a t u r a t i o n c u r r e n t c a p a b i l i t y . * v o l t a g e c o n t r o l l e d s m a l l s i g n a l s w i t c h . c i r c u i t s d g a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l parameter CHT2302PT units v dss drain-source voltage 20 v v gss gate-source voltage 8 v i d maximum drain current - continuous a - pulsed 10 p d maximum power dissipation 1250 mw t j ,t stg operating and storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 85 2.8 marking 2 1 3 drain-source diose forward current a 1.6 i s c/w (note 1) (note 2) (note 1) (note 1) note : 1. surface mounted on fr4 board , t <=10sec 2. pulse test , pulse width <= 300us , duty cycle <= 2% * 02 s c - 5 9 / s o t - 3 4 6 (1) (2) (3) dimensions in millimeters 0.95 0.95 1.7~2.1 2.7~3.1 0.89~1.3 0.3~0.51 0.085~0.2 0~0.1 1.2~1.9 2.1~2.95 0.3~0.6 sc-59/sot-346
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHT2302PT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s o f f c h a r a c t e r i s t i c s 85 o n c h a r a c t e r i s t i c s v sd diose forward voltage v ds = v gs , i d = -250 a 1.0 v r ds(on) static drain-source on-resistance m w vgs=4.5v, id=3.6a switching characteristics q gs gate-source charge 1.6 nc q gd gate-drain charge t on turn-on time ns v dd = 10v i d = 1.0a , v g en = 4.5 v 12 t r rise time 36 1 b v d s s d r a i n - s o u r c e b r e a k d o w n v o l t a g e v gs = 0 v, i d = 250 a n a 20 v n a i gss dss gss zero gate voltage drain current i v i ds gate-body leakage = gate-body leakage 16 v, v v gs gs = 8 v, = 0 v v ds = 0 v a +100 -100 v gs = -8 v, v ds = 0 v 115 v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 0.7 v vgs=2.5v, id=3.1a 34 t f fall time 10 q g total gate charge 6.52 1.16 vds=10v, id=1a vgs=4.5v turn-off time t off rl= 10 , rgen= 10 w w (note 2) (note 3) note : 3. guaranteed by design , not subject to production trsting 1.2
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHT2302PT ) 0 1 2 3 4 5 0 2 4 6 8 v , drain-source voltage (v) i , dr a in-source current (a) ds d -50 -25 0 25 50 75 100 125 0.95 1.05 t , jun ctio n t emperature (c) breakdown voltage j bvdss , normalized gate-source 0 2 4 6 8 vgs , gate-te-source voltage (v) d r a i n - s o u r c e o n - r e s i s t a n c e r , no r m a l i z e d d s ( o n ) typical electrical characteristics figure 1. output characteristics figure 2. transfer characteristics figure 3. breakdown voltage variation with temperature f i g u r e 4 . on-resistance variation with temperature figure 5. gate threshold variation with 10 1.5 2.0 0.5 0 1.15 0.85 temperature 1.0 10 v 5.0v 4.5v 2.5v 3.0v 3.5v 4.0v gs= v 2.0v gs= v 1.5v gs= 6 j=-55c t j=25c t j=125c t i , dr a in-source current (a) d 2.5 3.0 0.80 0.90 1.00 1.10 id=250ua 1.8 0.6 -50 -25 0 25 50 75 100 125 1.0 1.4 t , jun ctio n t emperature (c) j 0.4 0.8 1.2 1.6 id=3.6a vgs=4.5v 1.15 0.85 -50 -25 0 25 50 75 100 125 0.95 1.05 t , jun ctio n t emperature (c) j 0.80 0.90 1.00 1.10 threshold voltage vth , normalized gate-source id=250ua 5 0 1 2 3 4 5 6 7 8 0 1 2 3 4 qg , total gate charge (nc) vgs , gate to source voltage (v) figure 6. gate charge id=1.0 a vds=10v
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