BGR405 npn silicon rf transistor with bias circuitry data sheet, rev. 1.0, juni 2008 small signal discretes
edition 2008-06-06 published by infineon technologies ag, 85579 neubiberg, germany ? infineon technologies ag 2008. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGR405 data sheet 3 rev. 1.0, 2008-06-06 trademarks sieget ? is a registered trademark of infineon technologies ag. BGR405, npn silicon rf transistor with bias circuitry revision history: 2008-06-06, rev. 1.0 prevision history: no previous version page subjects (major changes since last revision)
data sheet 4 rev. 1.0, 2008-06-06 BGR405 npn silicon rf transistor with bias circuitry* 1 npn silicon rf transistor with bias circuitry* 2 description the BGR405 is a monolithic silicon amplifier with a npn silicon rf transistor and integrated resistors for biasing. note: esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! figure 1 circuit diagram note: due to design there is an additional diode between emitter and collector, which does not effect normal operation for common emitter configuration. features ? noise figure nf = 1.0 db at 0.4 ghz ?gain s 21 = 7.5 db at 0.4 ghz ? on chip bias circuitry, 0.85 ma bias current at v cc =1.2v ? sieget ? 25 ghz f t -line ? pb-free (rohs compliant) package * short term description applications ?lnas type package marking BGR405 sot343 avs 1 2 3 4 % * 5 b f l u f x l w b g l d j u d p * 1 ' 5 ) 2 8 7 9 & & 5 ) , 1 5 e n 2 k p 5 f 2 k p
BGR405 description data sheet 5 rev. 1.0, 2008-06-06 2.1 maximum ratings note: all voltages refer to gnd-node note: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions even only for a short moment may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. absolute maximum ratings typically differ heavily from recommended operation conditions. 2.2 thermal resistance table 1 pinning table pin function 1rfin 2gnd 3rfout 4vcc table 2 maximum ratings parameter symbol value unit current at pin vcc i cc 12 ma voltage at pin vcc v cc 5v current at pin rfin i b 0.8 ma voltage at pin rfin v b 2v current at pin rfout 1) 1) applicable if vcc and rfout are shorted, otherwise a coupling capacitor at rfout is demanded i out 12 ma voltage at pin rfout v out 4.1 v total power dissipation 2) t s = 120 c 2) t s is measured on the emitter (gnd) lead at the soldering point to the pcb p tot 50 mw operation junction temperature range t jo -65... 150 c storage junction temperature range t jstg -65... 150 c table 3 thermal resistance parameter symbol value unit junction - soldering point 1) 1) for calculation of r thja please refer to application note thermal resistance. r thjs 595 k/w
data sheet 6 rev. 1.0, 2008-06-06 BGR405 electrical characteristics 3 electrical characteristics figure 2 BGR405 test circuit table 4 dc characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit note / test condition min. typ. max. device current i cc 0.6 0.85 1.1 ma v cc =1.2v table 5 ac characteristics (measured in test circuit figure 2 ; verified by random sampling) t a =25c, v cc =1.2v, z 0 =50 ? , unless otherwise specified parameter symbol values unit note / test condition min. typ. max. insertion power gain s 21 7.5 7.0 db f =0.4ghz f =1.8ghz reverse isolation s 12 -37 -25 db f =0.4ghz f =1.8ghz noise figure, z s = z sopt nf 1.0 1.6 db f =0.4ghz f =1.8ghz thid order intercept point at the output 1) 1) oip 3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz. o ip 3 -9 14.5 dbm f =0.4ghz, v cc =1.2v f =1.8ghz, v cc =4v 1 db compression point at the output op -1db -19 -0.5 dbm f =0.4ghz, v cc =1.2v f =1.8ghz, v cc =4v return loss input s 11 -0.4 -1.8 db f =0.4ghz f =1.8ghz return loss output s 22 -4.0 -6.0 db f =0.4ghz f =1.8ghz % * 5 b f l u f x l w b w h v w % l d v 7 q ) * 1 ' 9 & & 5 ) 2 8 7 s ) q r w f r q q h f w h g % l d v 7 5 ) , 1 q r w f r q q h f w h g
BGR405 package information data sheet 7 rev. 1.0, 2008-06-06 4 package information figure 3 package outline sot343 figure 4 footprint of sot343 figure 5 tape of sot343 sot343-po v08 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 3 2 4 1 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. 0.6 sot343-fp v08 0.8 1.6 1.15 0.9 sot323-tp v02 0.2 4 2.15 8 2.3 1.1 pin 1
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