phase control thyristor h30tb/tlxx symbol characteristics conditions t j ( 0 c) value unit blocking parameters v rrm repetitive peak reverse voltage 125 200-1600 v v drm repetitive peak off-stage voltage 125 200-1600 v i rrm repetitive peak reverse current v = v rrm 125 15 ma i drm repetitive peak off-state current v = v rrm 125 15 ma d v /d t rep. rate of change of voltage @ 67%v drm 125 600 v/ s conducting parameters i f(av) average on-state current 180 sine, 50h z , t c = 85 0 c 30 a i rms rms on-state current 50 a i tsm surge on-state current 500 a i 2 t i 2 t sine wave, 10ms without reverse voltage 125 1250 a 2 s v t peak on-state voltage drop on-state current = 100a 125 1.72 v v 0 threshold voltage 125 0.95 v r 0 on-state slope resistance 125 6.40 m di/dt repetitive rate of rise of current d ig /d t = 1a/s v gk = 1v 125 100 a/ s triggering parameters i gt gate trigger current v d = 5v 25 100 ma v gt gate trigger voltage 25 2.50 v i l latching current v d = 5v 25 300 ma i h holding current v d = 5v 25 200 ma p g ?peak maximum peak gate power pulse width 100 sec 30 w v fgm maximum forward gate voltage 12 v i fgm maximum forward gate current 10 a thermal & mechanical parameters r th (j-c) thermal impedance, 180 conduction, sine junction to case 0.93 0 c/w r th (c-hk) thermal impedance case to heatsink 0.30 0 c/w t j maximum permissible junction temperature 125 0 c t stg storage temperature range -40 - 125 0 c f mounting torque 2 nm w weight for tb for tl 30 15 gms h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 1 of 6
phase control thyristor h30tb/tlxx h30tlxx H30TBXX all dimensions in mm h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 2 of 6
phase control thyristor h30tb/tlxx on state power loss 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0 5 10 15 20 25 30 35 40 45 50 i t(av) - a p t(av) - w 60 0 120 180 0 maximum permissible case temp 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 40 45 50 i t(av) a t case ( 0 c) 60 0 120 0 180 0 h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 3 of 6
phase control thyristor h30tb/tlxx max non repetitive surge current 0 50 100 150 200 250 300 350 400 450 500 550 600 0.01 0.1 1 10 time in sec i tsm - a transient thermal impedance junction to case 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.001 0.01 0.1 1 10 time in sec r th(j-c) h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 4 of 6
phase control thyristor h30tb/tlxx on state characteristics 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 00.511.522.533.5 v t - v i t(av) - a gate trigger characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i g (av ) - a v g(v) - v v g t i gt 25 0 c i gd 30 w (0.1ms ) p o(tp) h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 5 of 6
phase control thyristor h30tb/tlxx ordering information: - h 30 tb / tl xx hirect make thyristor i f(av) = 30a tb ? with a pigtail tl ? with lug v rrm = xx x 100 e.g.12 * 100 =1200v hind rectifiers ltd reserves the right to change the specifications without notice. this datasheet specifies technical information for semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. hind rectifiers ltd lake road bhandup (west) mumbai ? 400 078 tel: - +91 22 2596 8027/28/29/31 fax: - +91 22 2596 4114 e-mail: - marketing@hirect.com website: - www.hirect.com june-2008 h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 6 of 6
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