solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sft5553a __ __ __ scre ening 2 / __ = not screen tx = tx level txv = txv level s = s level polarity __ = normal r = reverse package /g = cerpack sft5553a/g series 5 amp 100 volts pnp power transistor features: ? bv ceo 80v ? fast switching ? very high gain ? low saturation voltage ? 200 oc operating temperature ? gold eutectic die attach ? tx, txv, s-level screening available maximum ratings symbol value units collector ? base voltage bv cbo 100 volts collector ? emitter voltage bv ceo 80 volts emitter ? base voltage bv ebo 6.0 volts continuous collector current i c 5.0 amps base current i b 2.0 amps power dissipation @ t c 100oc derate above 100oc p d 40 0.4 w w/ oc operating & storage temperature top & tstg -65 to +200 oc thermal resistance, junction to case r jc 1.8 oc/w cerpack outline: note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: tr0015e
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sft5553a/g series electrical characteristics 3 / symbol min max units collector ? emitter breakdown voltage i c = 100 a dc bv ceo 80 ?? volts collector ? base breakdown voltage i c = 100 a dc bv cbo 100 ?? volts emitter ? base breakdown voltage i e = 20 a dc bv ebo 6 ?? volts emitter ? cutoff current v eb = 5 v dc i ebo ?? 10 a collector ? cutoff current v cb = 100 v dc i cbo ?? 10 a collector ? cutoff current v ce = 80 v dc i ceo ?? 100 a dc current gain * v ce = 1.1v dc , i c = 1.0a dc v ce = 1.32v dc , i c = 2.5a dc v ce = 2.2v dc , i c = 5.0a dc h fe 80 55 25 220 150 120 ?? collector ? emitter saturation voltage * i c = 2.5a dc , i b = 0.2a dc v ce(sat) ?? 0.5 v dc base ? emitter saturation voltage * i c = 2.5a dc , i b = 0.2a dc v be(sat) ?? 1.1 v dc base ? emitter on voltage * i c = 2.5a dc , v ce = 1.3v dc v be(on) ?? 0.95 v dc current gain bandwidth product i c = 50ma dc , v ce = 10v dc , f = 20mhz f t 40 ?? mhz output capacitance v cb = 30v dc , i e = 0a dc , f = 1.0mhz c ob ?? 120 pf turn on time t (on) ?? 200 nsec turn off time v cc = 200v dc , i c = 1.0a dc , i b1 = i b2 = 100ma dc , r b1 = r b2 = 40 ? t (off) ?? 1500 nsec notes: * pulse test: pulse width = 300sec, duty cycle = 2% 1 / for ordering information, price, and availability contact factory. 2 / screening per mil-prf-19500 3 / unless otherwise specified, all electrical characteristics @25oc. available part numbers: sft5553a/g sft5553a/gr pin assignment (standard) code function base pin 1 pin 2 --- normal collector emitter base r reverse collector base emitter note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: tr0015e
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