MRF5S19150HR3 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for pcn and pcs base station applications at frequencies from 1900 to 2000 mhz. suitable for tdma , cdma and multicarrier amplifier applications. ? typical 2 - carrier n - cdma performance for v dd = 28 volts, i dq = 1400 ma, avg., p out = 32 watts avg., f = 1990 mhz, is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 14 db drain efficiency ? 26% im3 @ 2.5 mhz offset ? - 36.5 dbc in 1.2288 mhz bandwidth acpr @ 885 khz offset ? - 50 db in 30 khz bandwidth ? capable of handling 5:1 vswr, @ 28 vdc, 1960 mhz, 100 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v operation ? integrated esd protection ? lower thermal resistance package ? low gold plating thickness on leads, 40 nominal. ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 427 2.44 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c cw operation @ t c = 25 c derate above 25 c cw 120 0.76 w w/ c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 100 w cw case temperature 75 c, 32 w cw r jc 0.41 0.44 c/w 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf5s19150h rev. 4, 10/2008 freescale semiconductor technical data MRF5S19150HR3 1930- 1990 mhz, 32 w avg., 28 v 2 x n - cdma lateral n - channel rf power mosfet case 465b - 03, style 1 ni - 880 ? freescale semiconductor, inc., 2008. all rights reserved.
2 rf device data freescale semiconductor MRF5S19150HR3 table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model c7 (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 360 adc) v gs(th) 2.5 2.8 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1400 madc) v gs(q) ? 3.8 ? vdc drain- source on - voltage (v gs = 10 vdc, i d = 3.6 adc) v ds(on) ? 0.24 ? vdc forward transconductance (v ds = 10 vdc, i d = 3.6 adc) g fs ? 9 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 3.1 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1400 ma, p out = 32 w avg., f1 = 1987.5 mhz, f2 = 1990 mhz, 2 - carrier n - cdma, 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz channel bandwidth @ 885 khz offset. im3 measured in 1.2288 mhz channel bandwidth @ 2.5 mhz offset. par = 9.8 db @ 0.01% probability on ccdf. power gain g ps 13 14 ? db drain efficiency d 24 26 ? % intermodulation distortion im3 ? - 36.5 -35 dbc adjacent channel power ratio acpr ? -50 -48 dbc input return loss irl ? -17 -9 db 1. part internally matched both on input and output.
MRF5S19150HR3 3 rf device data freescale semiconductor figure 1. MRF5S19150HR3 test circuit schematic z9 1.280 x 0.046 microstrip z10 0.090 x 1.055 microstrip z11 1.125 x 0.068 microstrip z12 1.125 x 0.068 microstrip z13 0.505 x 1.055 microstrip z14 0.898 x 0.105 microstrip z15 1.133 x 0.082 microstrip pcb arlon gx0300 - 55 - 22, 0.03 , r = 2.55 z1 1.023 x 0.082 microstrip z2 0.398 x 0.082 microstrip z3 0.203 x 0.082 microstrip z4 0.074 x 0.082 microstrip z5 0.630 x 0.084 microstrip z6 0.557 x 1.030 x 0.237 microstrip taper z7 0.103 x 1.030 microstrip z8 1.280 x 0.046 microstrip c8 r2 v bias v supply c23 c16 c15 c1 c5 c14 c4 rf output rf input r1 z1 z2 z4 z5 z6 z8 z11 z13 z14 + dut c9 c22 c21 b1 r3 c24 z10 z15 c7 c6 z7 c2 z3 c3 z9 c10 b2 r4 c11 c12 c13 c17 c18 c19 c20 c29 c28 c31 c30 c26 c27 c32 c33 c25 z12 + + + + + + + + + + + table 5. MRF5S19150HR3 test circuit component designations and values part description b1, b2 short rf beads, fair - rite #2743019447 c1, c2 0.6 ? 4.5 variable capacitors, gigatrim, johanson #27271sl c3 0.8 pf chip capacitor, atc #atc100b0r8jt500xt c4, c5, c13, c14, c24, c25 9.1 pf chip capacitors, atc #atc100b9r1jt500xt c8, c10 1.0 f, 50 v smt tantalum capacitors, kemet #t491c105m050at c6, c12, c16, c17, c18, c27, c28, c29 0.1 f chip capacitors, kemet #cdr33bx104akys c7, c11, c15, c26 1000 pf chip capacitors, atc #atc100b102jt50xt c9 100 f, 50 v electrolytic capacitor, multicomp #mcht101m1hb - 1017- rh c23 470 f, 63 v electrolytic capacitor, multicomp #ekme630ell471mk25s c19, c20, c21, c22, c30, c31, c32, c33 22 f, 35 v tantalum capacitors, kemet #t491d226m035as r1 1 k , 1/4 w chip resistor, vishay #crcw12061001fkea r2 560 k , 1/4 w chip resistor, vishay #crcw12065600fkea r3, r4 12 , 1/4 w chip resistors, vishay #crcw120612r0fkea
4 rf device data freescale semiconductor MRF5S19150HR3 figure 2. MRF5S19150HR3 test circuit component layout c1 r1 r2 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 c12 c13 c14 c15 mrf5s19150 rev 4 r3 v gg v dd r4 b1 cut out area b2 c16 c17 c18 c19 c20 c21 c22 c23 c24 c25 c26 c27 c28 c29 c30 c31 c32 c33 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
MRF5S19150HR3 5 rf device data freescale semiconductor typical characteristics 2020 5 15 1900 ?55 40 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier n - cdma broadband performance @ p out = 32 watts avg. g ps , power gain (db) ?60 ?10 ?20 ?30 ?40 input return loss (db) irl, v dd = 28 vdc, p out = 32 w (avg.), i dq = 1400 ma 2?carrier n?cdma, 2.5 mhz carrier spacing 1.228 mhz channel bandwidth par = 9.8 db @ 0.01% probability (ccdf) im3 (dbc), acpr (dbc) ?50 14 35 13 30 12 25 11 20 10 ?30 9 ?35 8 ?40 7 ?45 6 ?50 1920 1940 1960 1980 2000 100 11 16 1 p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) 10 15 14 13 12 i dq = 2100 ma 1700 ma v dd = 28 vdc f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurement, 2.5 mhz tone spacing 1400 ma 700 ma 1050 ma 100 ?55 ?15 1 i dq = 2100 ma 1700 ma p out , output power (watts) pep figure 5. third order intermodulation versus output power v dd = 28 vdc f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurement, 2.5 mhz tone spacing 10 1400 ma 700 ma 1050 ma ?20 ?25 ?30 ?35 ?40 ?45 ?50 10 ?60 ?20 0.1 two?tone spacing (mhz) figure 6. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, 3rd order v dd = 28 vdc, p out = 150 w (pep), i dq = 1400 ma two?tone measurements (f1 + f2)/2 = center frequency of 1960 mhz 5th order 7th order ?25 ?30 ?35 ?40 ?45 ?50 ?55 1 45 49 59 35 p3db = 53.71 dbm (234.96 w) p in , input power (dbm) figure 7. pulse cw output power versus input power p out , output power (dbm) v dd = 28 vdc, i dq = 1400 ma pulsed cw, 8 sec (on), 1 msec (off) f = 1960 mhz 44 43 42 41 40 39 38 37 36 58 57 56 55 54 53 52 51 50 p1db = 53.01 dbm (199.99 w) d , drain efficiency (%) d intermodulation distortion (dbc) imd, third order
6 rf device data freescale semiconductor MRF5S19150HR3 typical characteristics 10 0 45 ?70 ?25 g ps im3 p out , output power (watts) avg., n?cdma figure 8. 2 - carrier n - cdma acpr, im3, power gain, drain efficiency versus output power im3 (dbc), acpr (dbc) v dd = 28 vdc, i dq = 1400 ma f1 = 1958.75 mhz, f2 = 1961.25 mhz 2 x n?cdma, 2.5 mhz @ 1.2288 mhz bandwidth par = 9.8 db @ 0.01% probability (ccdf) acpr 40 ?30 35 ?35 30 ?40 25 ?45 20 ?50 15 ?55 10 ?60 5 ?65 1 220 10 6 10 9 100 figure 9. mttf factor versus junction temperature mttf factor (hours x amps 2 ) 10 8 10 7 120 140 160 180 200 t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. d d , drain efficiency (%), g ps , power gain (db) n - cdma test signal f, frequency (mhz) ?100 0 figure 10. 2 - carrier n - cdma spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?acpr in 30 khz integrated bw +acpr in 30 khz integrated bw ?im3 in 1.2288 mhz integrated bw +im3 in 1.2288 mhz integrated bw 1.2288 mhz channel bw 6 1.5 4.5 3 0 ?1.5 ?3 ?4.5 ?6 ?7.5 7.5 (db)
MRF5S19150HR3 7 rf device data freescale semiconductor figure 11. series equivalent source and load impedance f mhz z source z load 1930 1960 1990 1.89 - j5.24 1.3 - j5.49 1.64 - j5.29 1.06 - j1.58 0.88 - j1.37 0.90 - j1.21 v dd = 28 v, i dq = 1400 ma, p out = 32 w avg. z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f = 1990 mhz f = 1930 mhz z o = 10 z source z load f = 1930 mhz f = 1990 mhz
8 rf device data freescale semiconductor MRF5S19150HR3 package dimensions case 465b - 03 issue d ni - 880 MRF5S19150HR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. deleted dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.535 0.545 13.6 13.8 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 q .118 .138 3.00 3.51 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h f q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) s m a m aaa b m t (insulator) r m a m ccc b m t (lid) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 aaa 0.007 ref 0.178 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref
MRF5S19150HR3 9 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 4 nov. 2008 ? data sheet revised to reflect part status change, p. 1 ? modified data sheet to reflect rf test reduction described in product and process change notification number, pcn12779, p. 1, 2 ? updated part numbers in table 5, component designations and values, to latest rohs compliant part numbers, p. 3 ? added product documentation and revision history, p. 9
10 rf device data freescale semiconductor MRF5S19150HR3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or +1 - 303- 675- 2140 fax: +1 - 303- 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf5s19150h rev. 4, 10/2008
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