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march 2006 rev 7 1/12 12 STL50NH3LL n-channel 30v - 0.011 ? - 13a - powerflat? (6x5) ultra low gate charge stripfet? power mosfet general features improved die-to-footprint ratio very low profile package (1mm max) very low thermal resistance very low gate charge low threshold device description this application specific power mosfet is the latest generation of stmicroelectronics unique ?stripfet?? technology. the resulting transistor is optimized for low on-resistance and minimal gate charge. the chip-scaled powerflat? package allows a significant board space saving, still boosting the performance. applications switching application internal schematic diagram type v dss r ds(on) i d STL50NH3LL 30v <0.013 ? 13a (4) powerflat?( 6x5 ) www.st.com order codes part number marking package packaging STL50NH3LL l50nh3ll powerflat? (6x5) tape & reel
contents: STL50NH3LL 2/12 contents: 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STL50NH3LL electrical ratings 3/12 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs (1) 1. continuous mode gate-source voltage 16 v v gs (2) 2. guaranteed for test time < 15ms gate-source voltage 18 v i d (3) 3. the value is rated according r thj-c and is limited by wire bonding drain current (continuous) at t c = 25c 27 a i d (4) 4. the value is rated according r thj-pcb drain current (continuous) at t c =100c 8.1 a i dm (5) 5. pulse width limited by safe operating area drain current (pulsed) 108 a i d (4) drain current (continuous) at t c = 25c 13 a p tot (4) total dissipation at t c = 25c 4 w p tot (3) total dissipation at t c = 25c 60 w derating factor 0.03 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 2. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case (drain) 2.08 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10sec thermal resistance junction-ambient 31.3 c/w table 3. avalanche data symbol parameter value unit i ar not-repetitive avalanche current (pulse width limited by tj max) 6a e as single pulse avalanche energy (starting tj=25c, id=iav, vdd=24v) 800 mj
electrical characteristics STL50NH3LL 4/12 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test condictions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 16v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1v r ds(on) static drain-source on resistance v gs = 10v, i d = 6.5a v gs = 4.5v, i d = 6.5a 0.011 0.012 0.013 0.015 ? ? table 5. dynamic symbol parameter test condictions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds =10v, i d = 6.5a 32 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 965 285 38 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15v, i d = 13a v gs =4.5v (see figure 7) 9 3.7 3 12 nc nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 0.5 1.5 2.5 ?
STL50NH3LL electrical characteristics 5/12 table 6. switching times symbol parameter test condictions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =15v, i d = 6.5a, r g =4.7 ?, v gs =4.5v (see figure 13) 15 32 18 8.5 ns ns ns ns table 7. source drain diode symbol parameter test condictions min typ. max unit i sd source-drain current 13 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 52 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =13a, v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =13a, di/dt = 100a/s, v dd =20v, tj=150c (see figure 15) 24 17.4 1.45 ns nc a
electrical characteristics STL50NH3LL 6/12 2.1 electrical characteristics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
STL50NH3LL electrical characteristics 7/12 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized b vdss vs temperature
test circuit STL50NH3LL 8/12 3 test circuit figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform
STL50NH3LL package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STL50NH3LL 10/12 dim. mm. inch min. typ max. min. typ. max. a 0.80 0.83 0.93 0.031 0.032 0.036 a1 0.02 0.05 0.0007 0.0019 a3 0.20 0.007 b 0.35 0.40 0.47 0.013 0.015 0.018 d 5.00 0.196 d1 4.75 0.187 d2 4.15 4.20 4.25 0.163 0.165 0.167 e 6.00 0.236 e1 5.75 0.226 e2 3.43 3.48 3.53 0.135 0.137 0.139 e4 2.58 2.63 2.68 0.103 0.105 e 1.27 0.050 l 0.70 0.80 0.90 0.027 0.031 0.035 powerflat? (6x5) mechanical data
STL50NH3LL revision history 11/12 5 revision history table 8. revision history date revision changes 21-jul-2005 1 first release 14-apr-2005 2 final version 20-jun-2005 3 updated mechanical data 22-jun-2005 4 new rg value on table 6 30-sep-2005 5 inserted ecopack indication 04-jan-2006 6 new footprint 30-mar-2006 7 new template
STL50NH3LL 12/12 please read carefully: i nformation in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st? ) reserve th e r ight to make changes, corrections, modifications or improvements, to this document, and the products and services described her ein at an y t ime, without notice. a ll st products are sold pursuant to st?s terms and conditions of sale. p urchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st ass umes n o l iability whatsoever relating to the choice, selection or use of the st products and services described herein. n o license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. if any part of th is d ocument refers to any third party products or services it shall not be deemed a license grant by st for the use of such third p arty produc ts o r services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoeve r of suc h t hird party products or services or any intellectual property contained therein. u nless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implie d w arranty with respect to the use and/or sale of st products including without limitation implie d w arranties of merchantability, fitness for a particular purpose (and their equivalents under the law s o f any jurisdiction), or infringement of any patent, copyright or other intellectual property right. u nless expressly approved in writing by an authorize representative of st, st products are not designe d, a uthorized or warranted for use in military, air craft, space, life saving, or life sustaining application s, n or in products or systems, where failure or malfunction may result in personal injury, death, o r s evere property or environmental damage. r esale of st products with provisions different from the statements and/or technical features set forth in this document shall i mmediately vo id a ny warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoeve r, an y l iability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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