1/8 december 2002 . STN3NF06L n-channel 60v - 0.07 w - 4a sot-223 stripfet? ii power mosfet n typical r ds (on) = 0.07 w n exceptional dv/dt capability n avalanche rugged technology n 100% avalanche tested n low threshold drive description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n dc-dc & dc-ac coverters n dc motor control (disk drivers, etc.) n synchronous rectification type v dss r ds(on) i d STN3NF06L 60 v < 0.1 w 4 a 1 2 2 3 sot-223 internal schematic diagram absolute maximum ratings ( ) pulse width limited by safe operating area. ( ) current limited by the package (1) i sd 3a, di/dt 150a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 4a, v dd = 30v symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k w ) 60 v v gs gate- source voltage 16 v i d ( ) drain current (continuous) at t c = 25c 4a i d drain current (continuous) at t c = 100c 2.9 a i dm ( ) drain current (pulsed) 16 a p tot total dissipation at t c = 25c 3.3 w derating factor 0.026 w/c dv/dt (1) peak diode recovery voltage slope 10 v/ns e as (2) single pulse avalanche energy 200 mj t stg storage temperature -55 to 150 c t j operating junction temperature
STN3NF06L 2/8 thermal data (*) when mounted on fr-4 board with 1 inch 2 pad, 2 oz of cu and t [ 10 sec (**) when mounted on minimum footprint electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-pcb rthj-pcb t l thermal resistance junction-pcb (*) thermal resistance junction-pcb (**) maximum lead temperature for soldering purpose (for 10 sec. 1.6 mm from case) max max typ 38 100 260 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 16 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1 2.8 v r ds(on) static drain-source on resistance v gs = 10 v i d = 1.5 a v gs = 5 v i d = 1.5 a 0.07 0.085 0.10 0.12 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d = 1.5 a 3s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 340 63 30 pf pf pf
3/8 STN3NF06L switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v i d = 1.5 a r g = 4.7 w v gs = 5 v (resistive load, figure 3) 9 25 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48v i d = 3a v gs = 5v 7 1.5 2.8 9nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 30 v i d = 1.5 a r g = 4.7 w, v gs = 5 v (resistive load, figure 3) 20 10 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 4 16 a a v sd (*) forward on voltage i sd = 4 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a di/dt = 100a/s v dd = 25 v t j = 150c (see test circuit, figure 5) 50 88 3.5 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STN3NF06L 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/8 STN3NF06L normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. . .
STN3NF06L 6/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/8 STN3NF06L dim. mm mils min. typ. max. min. typ. max. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.630.650.6724.825.626.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 l 6.3 6.5 6.7 248 255.9 263.8 c c b e l a b e1 l1 f g c d l2 e4 p008b sot-223 mechanical data
STN3NF06L 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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