elek tr onische b aue lem ente MPSA06 npn plastic-encapsulate transistor http://www.secosgmbh.com/ any changing of specification will not be informed individual 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 3 symbol parameter v a lue unit s p cm power dissipation 0.625 w a i cm collector current storage temperature junction temperature 0.5 -55~+150 150 t stg t j c o c o v (br)cbo 80 v collector-base voltage electrical characteristics (tamb=25 c unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic=100a, i e =0 80 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 80 v emitter-base breakdown voltage v (br)ebo i e =100a, i c =0 4 v collector cut-off current i cbo v cb =60v, i e =0 0.1 a collector cut-off current i ceo v ce =60v, i b =0 0.1 a emitter cut-off current i ebo v eb =3v, i c =0 0.1 a dc current gain h fe(1) v ce =1v, i c = 100ma 100 200 collector-emitter saturation voltage v ce(sat) i c =100 ma, i b =10ma 0.25 v base-emitter saturation voltage v be(sat) i c = 100 ma, i b =10ma 1.2 v transition frequency f t v ce = 2 v, i c = 10ma f = 100mhz 100 mhz o 2.54 0.1 (1.27 typ.) 13 2 1: emitter 2: base 3: collector 1.25 0.2 4.55 0.2 3. 5 0.2 4.5 0.2 14.3 0.2 0.46 0.1 0.43 +0.08 C0.07 to-92 f e a t u r e s * l o w c u r r e n t ( m a x . 5 0 0 m a ) * l o w v o l t a g e ( m a x . 8 0 v ) . a p p l i c a t i o n s * g e n e r a l p u r p o s e s w i t c h i n g a n d a m p l i f i c a t i o n . d e s c r i p t i o n n p n t r a n s i s t o r i n a t o - 9 2 ; p l a s t i c p a c k a g e . p n p c o m p l e m e n t : m p s a 5 6 . rohs compliant product a suffix of "-c" specifies halogen & lead-free
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 2 of 3 elek tr onische b aue lem ente MPSA06 npn plastic-encapsulate transistor t y p i c a l c h a r a c t e r i s t i c s
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