vishay siliconix si1988dh new product document number: 74296 s-62109-rev. a, 23-oct-06 www.vishay.com 1 dual n-channel 20-v (d-s) mosfet features ? trenchfet ? power mosfet applications ? load switch for portable applications product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ) 20 0.168 at v gs = 4.5 v 1.3 a 1.6 nc 0.200 at v gs = 2.5 v 1.3 a 0.250 at v gs = 1.8 v 1.3 a m a rking code cf xx lot tr a ce ab ility a nd d a te code p a rt # code y y s ot-363 s c-70 (6-lead s ) 6 4 1 2 3 5 to p v iew s 1 g 1 d 2 d 1 g 2 s 2 orderin g information: s i19 88 dh-t1-e 3 (le a d (p b )-free) n-ch a nnel mo s fet g 1 d 1 s 1 n-ch a nnel mo s fet g 2 d 2 s 2 notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 sec. d. maximum under steady state conditions is 220 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d 1.3 a a t c = 70 c 1.3 a t a = 25 c 1.3 a, b, c t a = 70 c 1.3 a, b, c pulsed drain current i dm 4 continuous source-drain diode current t c = 25 c i s 1.0 t a = 25 c 0.61 b, c maximum power dissipation t c = 25 c p d 1.25 w t c = 70 c 0.8 t a = 25 c 0.74 b, c t a = 70 c 0.47 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 sec r thja 130 170 c/w maximum junction-to-foot (drain) steady state r thjf 80 100 rohs compliant
www.vishay.com 2 document number: 74296 s-62109-rev. a, 23-oct-06 vishay siliconix si1988dh notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient v ds /t j i d = 250 a 19.7 mv/c v gs(th) temperature coefficient v gs(th) /t j - 2.4 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.4 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 ns zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 4a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 1.4 a 0.139 0.168 v gs = 2.5 v, i d = 1.3 a 0.165 0.200 v gs = 1.8 v, i d = 0.4 a 0.205 0.250 forward transconductance a g fs v ds = 4 v, i d = 1.4 a 4s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 110 pf output capacitance c oss 25 reverse transfer capacitance c rss 11 total gate charge q g v ds = 10 v, v gs = 8 v, i d = 1.6 a 2.7 4.1 nc v ds = 10 v, v gs = 4.5 v, i d = 1.6 a 1.6 2.4 gate-source charge q gs 0.3 gate-drain charge q gd 0.25 gate resistance r g f = 1 mhz 4 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 7.7 i d ? 1.3 a, v gen = 4.5 v, r g = 1 812 ns rise time t r 20 30 turn-off delay time t d(off) 15 25 fall time t f 10 15 turn-on delay time t d(on) v dd = 10 v, r l = 7.7 i d ? 1.3 a, v gen = 8 v, r g = 1 510 rise time tr 11 20 turn-off delay time t d(off) 10 15 fall time tr 6 10 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 1 a pulse diode forward current i sm 4 body diode voltage v sd i s = 1.3 a, v gs = 0 v 0.8 1.2 v body diode reverse recovery time t rr i f = 1.3 a, di/dt = 100 a/s, t j = 25 c 20 40 ns body diode reverse recovery charge q rr 20 40 nc reverse recovery fall time t a 16 ns reverse recovery rise time t b 4
document number: 74296 s-62109-rev. a, 23-oct-06 www.vishay.com 3 vishay siliconix si1988dh typical characteristics 25 c, unless noted output characteristics on-resistance vs. drain current gate charge 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 v g s = 1 v v d s ? dr a in-to- s o u rce volt a ge (v) ) a ( t n e r r u c n i a r d ? i d v g s = 1.5 v v g s = 5 thr u 2 v 0.100 0.150 0.200 0.250 0.300 0.350 0.400 01234 v gs ? gate-to-source voltage (v) r ) n o ( s d e ( ) c n a t s i s e r - n o e c r u o s - o t - n i a r d ? v gs = 2.5 v v gs = 4.5 v v gs = 1.8 v 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d = 1.6 a ) v ( e g a t l o v e c r u o s - o t - e t a g ? q g ? total gate charge (nc) v s g v ds = 10 v v ds = 16 v transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.3 0.6 0.9 1.2 1.5 t c = 125 c v gs ? gate-to-source voltage (v) ) a ( t n e r r u c n i a r d ? i d t c = 25 c t c = - 55 c 0 40 80 120 160 0 4 8 12 16 20 c oss c iss v ds ? drain-to-source voltage (v) ) f p ( e c n a t i c a p a c ? c c rss 0.60 0. 8 0 1.00 1.20 1.40 1.60 1. 8 0 - 50 - 25 0 25 50 75 100 125 150 v g s = 1. 8 , 2.5, 4.5 v t j ? j u nction temper a t u re (c) r ) n o ( s d e c n a t s i s e r - n o ? ) d e z i l a m r o n ( i d = 1.6 a
www.vishay.com 4 document number: 74296 s-62109-rev. a, 23-oct-06 vishay siliconix si1988dh typical characteristics 25 c, unless noted forward diode voltage threshold voltage 10 0.100 v sd ? source-to-drain voltage (v) ?) a ( t n e r r u c e c r u o s i s 1 0 0.2 0.4 0.6 0.8 1.2 1 t j = - 150 c t j = - 25 c 0.3 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j ? temperature (c) v ) h t ( s g ) v ( on-resistance vs. gate-source voltage single pulse power 0.100 0.150 0.200 0.250 0. 3 00 0. 3 50 0.400 012 3 45 v g s ? g a te-to- s o u rce volt a ge (v) r ) n o ( s d ( ) e c n a t s i s e r - n o e c r u o s - o t - n i a r d ? t j = 25 c t j = 125 c i d = 1.4 a 0 1 5 ) w ( r e w o p time (sec) 3 4 1600 10 0.1 0.01 2 100 safe operating area, junction-to-case 0.01 0.1 1 10 0.1 1 10 100 ) a ( t n e r r u c n i a r d ? i d v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified *limited by r ds(on) 100 s 1 s 10 ms 100 ms 1 ms 10 s dc t a = 25 c single pulsed bvdss limited
document number: 74296 s-62109-rev. a, 23-oct-06 www.vishay.com 5 vishay siliconix si1988dh typical characteristics 25 c, unless noted *the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance , and is more useful in settling the upper dissi- pation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 i d ) a ( t n e r r u c n i a r d ? t c ? case temperature (c) package limited power derating 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 t c ? case temperature (c) wer dissipation (w) o p normalized thermal transient impedance, junction-to-ambient 10 - 3 10 -2 110 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.1 0.05 0.02 s ingle p u l s e d u ty cycle = 0.5 s q ua re w a ve p u l s e d u r a tion ( s ec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit b as e = r thja = 170 c/w 3 . t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 note s : 4. su rf a ce mo u nted p dm
www.vishay.com 6 document number: 74296 s-62109-rev. a, 23-oct-06 vishay siliconix si1988dh typical characteristics 25 c, unless noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?74296. normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t
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