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MITSUBISHI SEMICONDUCTOR TRIAC
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR16A, BCR16B, BCR16C, BCR16E
OUTLINE DRAWING
Dimensions in mm
3 2.0 MIN
1 2.0 MIN
14 MAX
3
1 8.7 MAX
2
2
11.1 MAX
* IT (RMS) ...................................................................... 16A * VDRM ..............................................................400V/500V * IFGT !, IRGT !, IRGT # ........................................... 30mA
1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
BCR16A
APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of traffic signals, on/off control of copier lamps, solid state relay, microwave ovens
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Voltage class 8 400 600 10 500 700 Unit V V
Non-repetitive peak off-state voltage V1
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature
Conditions Commercial frequency, sine full wave, 360 conduction BCR16A, B, C BCR16E Tc=99C Tb=71C
3 MAX
6.5 MAX
Unit A A A2s W W V A C 16 5 10 2
Ratings
60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
170 121
0.5
-20 ~ +125
V1. Gate open.
Feb.1999
19 MAX
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol Tstg Parameter Storage temperature BCR16A -- Weight (Typical value) BCR16B BCR16C BCR16E -- -- Viso Soldering temperature Mounting torque Isolated voltage BCR16A only, 10 sec. BCR16C only (Typical value) BCR16E only, Ta=25C, AC 1 minute, T2 Terminal to base Test conditions Ratings -20 ~ +125 3.0 8.5 8.5 9.5 230 30 2.94 1500 C kg*cm N*m V g Unit C
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) Rth (j-b) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125C, VD=1/2VDRM Junction to case (BCR16A, BCR16B, BCR16C) Junction to base (BCR16E) Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, Tb=25C (BCR16E only), ITM=25A , Instantaneous measurement Limits Min. -- -- -- -- -- -- -- -- 0.2 -- --
V3
Typ. -- -- -- -- -- -- -- -- -- -- -- --
Max. 3.0 1.6 1.5 1.5 1.5 30 30 30 -- 1.2 2.5 --
Unit mA V V V V mA mA mA V C/W C/W V/s
V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- Unit
Test conditions
Commutating voltage and current waveforms (inductive load)
8
400 L 10 V/s R --
1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-8A/ms 3. Peak off-state voltage VD=400V L 10
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
TIME TIME VD
10
500
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
BCR16B
2-3.2 MIN
20 MAX
Dimensions in mm
BCR16C
2-3.2 MIN
BCR16E
5.3 MAX
20 MAX 21 MAX Feb.1999 22 MAX
1 3 230.2 33 MAX
(16.2) 1 2.5 MIN 2.0 MIN
16 MAX
14
2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 3 2.0 MIN
15.5 MAX
1
3 2.0 MIN
10 MAX 16 MAX 1.9 MAX
(16) 230.2 33 MAX 2
8.5 MAX
3 MIN
21 MAX
1 2.0 MIN
1.8 MAX 10 MAX
1.8 MAX 8 MAX
20.5 MAX
8.7 MAX
8.7 MAX
3
8.7 MAX
2 M6x1.0
2
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT 200 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102
ON-STATE CURRENT (A)
103 7 TC = 25C 5 Tb = 25C 3 2 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
GATE VOLTAGE (V)
101 7 5 3 VGT = 1.5V 2 100 7 5 3 2
PGM = 5.0W IGM = 2A
GATE TRIGGER CURRENT * VOLTAGE (Tj = tC) GATE TRIGGER CURRENT * VOLTAGE (Tj = 25C)
3 2 VGM = 10V
PG(AV) = 0.5W
100 (%)
GATE CHARACTERISTICS
GATE TRIGGER CURRENT*VOLTAGE VS. JUNCTION TEMPERATURE 200 TEST PROCEDURE , AND 180 160 140 120 100 80 60 GATE TRIGGER VOLTAGE 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) GATE TRIGGER CURRENT
IFGT I, IRGT I, IRGT III VGD = 0.2V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) (BCR16A, B, C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO BASE) (BCR16E)
TRANSIENT THERMAL IMPEDANCE (C/W)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE (C/W)
102 2 3 5 7 103 1.6
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER DISSIPATION
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
ON-STATE POWER DISSIPATION (W)
40
360 CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 30 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20
CASE TEMPERATURE (C)
35
140 120 100
BCR16A, BCR16B, 80 BCR16C 60 BCR16E
40 360 CONDUCTION 20 RESISTIVE, INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (C)
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16A) 160 160 160 t4.0 140 120 120 t3.0 120 80 80 t2.0 ALL FINS ARE 100 80 60 40 20 0
BLACK PAINTED ALUMINUM AND GREASED CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITH SOLDER : MOUNTING PLATE WITHOUT GREASE
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16B) 160 140 120 100 80 60 40 20 0
CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITHOUT GREASE : INSULATED PLATE WITH GREASE ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED
160 160 t4.0 120 120 t3.0 80 80 t2.0
0
2
4
6
8 10 12 14 16 18 20
0
2
4
6
8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16C) 160
AMBIENT TEMPERATURE (C)
140 NATURAL 120 100 80 60 40 20 0
AMBIENT TEMPERATURE (C)
ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED CONVECTION
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16E) 160 140 RESISTIVE, INDUCTIVE LOADS
NATURAL CONVECTION ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED
160 160 t4.0 120 120 t3.0 80 80 t2.0
120 100 80 60 40
CURVES APPLY
160 160 t4.0 120 120 t3.0 80 80 t2.0
CURVES APPLY REGARDLESS OF CONDUCTION ANGLE : MOUNTING ON FIN WITH GREASE : MICA PLATE WITH GREASE
20 REGARDLESS OF CONDUCTION 0
ANGLE
0
2
4
6
8 10 12 14 16 18 20
0
2
4
6
8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6
6V V
A RG
6V V
A RG
TEST PROCEDURE 1 6
TEST PROCEDURE 2
6V V
A RG
TEST PROCEDURE 3
Feb.1999

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