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Transmissive Photosensors (Photo Interrupters)
CNA1311K
Photo Interrupter
For contactless SW, object detection
A side (1.5)
(0.15)
B side
Unit : mm
Overview
CNA1311K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package.
(1.8) 4.0 1.0 A
With gate A Side or B Side Optical center 2.6 (C0.5)
1.5
1.5
Slit width (0.15)
5.0 min. 3.3 2.3
(0.9)
1.5
2-0.4 A' *3.0 1 3 *2.0
Features
Ultraminiature : 2.6 x 4.0 mm (height : 3.3 mm) Highly precise position detection : 0.05 mm Gap width : 1.0 mm
Not soldered 1.0 max.
2-0.2+0.2 -0.1
Absolute Maximum Ratings (Ta = 25C)
Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 6 50 75 20 35 6 75 -40 to +100 260 Unit V mA mW mA V V mW
2 4 Pin connection 1: Anode 3: Collecter 2: Cathode 4: Emitter (Note) 1. Tolerance unless otherwise specified is 0.2 2. ( ) Dimension is reference 3. * is dimension at the root of leads
2
4
*1
Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Operating ambient temperature Temperature Storage temperature Soldering temperature PC
*2
Input power derating ratio is 1.0mW/C at Ta 25C. *2 Output power derating ratio is 1.0mW/C at Ta 25C. *3 Soldering time is within 5 seconds.
Topr -25 to +85 Tstg Tsol*3
Electrical Characteristics (Ta = 25C)
Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Symbol VF IR ICEO VR = 3V VCE = 20V 50 50 Conditions IF = 20mA min typ 1.2 max 1.4 10 100 600 0.4 Unit V A nA A V s
Collector current IC VCE = 5V, IF = 5mA Transfer Collector to emitter saturation voltage VCE(sat) IF = 10mA, IC = 40A characteristics Response time tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000
*
Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)
,,
,,
50
RL
,, ,, ,,,
C C C
Soldering bath
more than 1mm
,, ,
SEC. A-A' 1
(0.45)
2-0.5
3
1
CNA1311K
Transmissive Photosensors (Photo Interrupters)
IF , IC -- Ta
60 60
IF -- VF
5 Ta = 25C
IC -- IF
VCE = 5V Ta = 25C
IF , IC (mA)
50
IF
50
Forward current, collector current
40
IF (mA)
40
IC (mA) Collector current
0 0.4 0.8 1.2 1.6 2.0 2.4
4
3
30 IC
Forward current
30
2
20
20
10
10
1
0 - 25
0
20
40
60
80
100
0
0
0
5
10
15
20
25
Ambient temperature Ta (C )
Forward voltage VF (V)
Forward current IF (mA)
VF -- Ta
1.6 3
IC -- VCE
120 Ta = 25C IF = 50mA 100
IC -- Ta
VCE = 5V IF = 5mA
VF (V)
1.2
10mA
IC (mA)
IC (%)
2
80
Forward voltage
0.8
Collector current
1mA
Relative output current
IF = 20mA 1 15mA 10mA 5mA 2mA 0 1 2 3 4 5 6
60
40
0.4
20
0 - 40 - 20
0
20
40
60
80
100
0
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
1 VCE = 20V 10 3
tr -- IC
VCC = 5V 10 3
tf -- IC
VCC = 5V
10 -1
ICEO (A)
10 2
10 2 RL = 2k 1k
tr (s)
tf (s)
10 -2
RL = 2k 1k 10 100
Rise time
Dark current
10 -3
1 10 -4
Sig.IN Sig. OUT 50
VCC Sig. OUT RL 90% 10%
Fall time
10
100
1
Sig.IN Sig. OUT 50
VCC Sig. OUT RL 90% 10%
10 -5 - 40 - 20
, ,,
0
20
40
60
80
100
10 -1 10 -2
tr
tf
10
,,
10 -1 10 -2 10 -1
td
tr
1
td
tf
10
10 -1
1
Ambient temperature Ta (C )
Collector current IC (mA)
Collector current IC (mA)
2
Transmissive Photosensors (Photo Interrupters)
CNA1311K
IC -- d
100 100
IC -- d
VCE = 5V Ta = 25C IF = 5mA VCE = 5V Ta = 25C IF = 5mA
Relative output current IC (%)
,,,
Criterion 0 d 0 0.4 0.8 1.2 1.6 2.0
80
Relative output current IC (%)
80 Criterion 0
60
60
40
40
20
20
0
0
0
0.4
Distance d (mm)
,, ,
d 0.8 1.2 1.6 2.0
Distance d (mm)
3
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR

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